< Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB (Typ.) @ f=12GHz APPLICATION Fig.1 S to Ku band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary GG Not to be reproduced or disclosed without permission by Mitsubishi Electric RECOMMENDED BIAS CONDITIONS VDS=3V , ID=30mA ORDERING INFORMATION Tape & reel 4,000pcs/reel RoHS COMPLIANT MGF1941AL is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO Gate to drain voltage VGSO ID Drain current PT Tch Tstg Parameter Gate to source voltage V(BR)GDO IDSS VGS(off) P1dB Glp Gs NFmin Ratings Unit -5 V -5 V 120 mA Total power dissipation 300 mW Channel temperature 175 C Storage temperature -65 to +150 C ELECTRICAL CHARACTERISTICS Symbol (Ta=25C ) Parameter (Ta=25C ) Test conditions Gate to drain breakdown voltage IG=-30A Saturated drain current VGS=0V,VDS=3V VDS=3V,ID=300A Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Associated gain Minimum noise figure VDS=3V, ID=30mA, f=12GHz VDS=3V, ID=30mA, f=12GHz, Pin=-5dBm VDS=3V, ID=10mA, f=12GHz Limits Unit MIN. TYP. MAX -8 -15 -- V 35 60 120 mA -0.3 -1.4 -3.5 V 11 15 -- dBm 7 10 -- dB --- 9 1.2 --- dB dB Note : P1B and Glp are tested with sampling inspection. Gs/NFmin are not tested. Publication Date : Mar., 2012 CSTG-14554 1 < Power GaAs FET > MGF1941AL Micro-X type plastic package Fig.1 3.2±0.1 (0.30) 2.6±0.1 (0.30) Bottom 0.5±0.1 (2.3) (2.3) aAA ② (0.30) ② 0.65±0.1 J 3.2±0.1 (0.30) ① 2.6±0.1 Top ③ Unit : mm 2.2±0.1 1.35±0.2 Side 0.15±0.05 1.7±0.1 ① Gate ② Source ③ Drain (GD-32) Publication Date : Mar., 2012 2 < Power GaAs FET > MGF1941AL Micro-X type plastic package TYPICAL CHARACTERISTICS (Ta=25°C) I D vs. VDS I D vs. VGS 100 100 Ta=25deg.C VGS=-0.2V/STEP 90 80 DRAIN CURRENT ID(mA) 80 DRAIN CURRENT ID(mA) Ta=25deg.C VDS=3V 90 VGS=0V 70 60 50 40 30 20 10 70 60 50 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 0 -3.0 5.0 DRAIN TO SOURCE VOLTAGE VDS(V) -2.5 -2.0 -1.5 -1.0 -0.5 0.0 GATE TO SOURCE VOLTAGE VGS(V) Po vs. Pin NF , Gs vs. ID 4.0 12 3.5 10 3.0 8 2.5 6 2.0 4 Ta= 2 5 de g.C VDS = 3 V I D= 3 0 mA f= 1 2 GHz 10 NF(dB) Po (dBm ) 15 5 f=12GHz Vds=3V Ids=10mA 0 1.5 -5 -15 -10 -5 0 5 10 2 1.0 15 0 0 Pin (dBm ) 10 20 30 ID(mA) Publication Date : Mar., 2012 3 40 50 Gs(dB) 20 < Power GaAs FET > MGF1941AL Micro-X type plastic package S PARAMETERS f (GHz) S11 Mag. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.981 0.933 0.862 0.780 0.694 0.610 0.547 0.499 0.480 0.480 0.505 0.548 0.588 0.633 0.670 0.722 0.761 0.788 Angle S21 Mag. Angle S12 Mag. -20.3 -40.4 -60.6 -81.1 -102.4 -124.3 -149.6 -174.0 162.9 142.0 123.1 106.4 90.2 76.4 62.2 53.0 41.1 30.8 5.081 4.936 4.742 4.509 4.265 3.982 3.689 3.389 3.117 2.904 2.720 2.569 2.393 2.277 2.142 1.968 1.799 1.614 159.6 140.0 120.8 102.2 84.0 66.6 49.0 32.7 17.6 3.5 -10.8 -25.2 -39.4 -53.3 -69.1 -84.2 -98.6 -113.4 0.016 0.031 0.045 0.056 0.066 0.073 0.079 0.083 0.087 0.091 0.098 0.107 0.113 0.122 0.131 0.135 0.140 0.143 (Conditions:VDS=3V,ID=30mA,Ta=25deg.C) S22 K MAG/MSG Angle Mag. Angle (dB) 78.2 67.1 56.7 47.1 38.0 30.2 22.2 14.8 9.4 5.7 1.6 -3.6 -10.5 -16.3 -24.9 -33.3 -40.8 -49.7 0.567 0.549 0.520 0.482 0.440 0.394 0.340 0.288 0.243 0.209 0.185 0.177 0.176 0.215 0.287 0.354 0.423 0.506 -11.2 -22.2 -32.9 -43.4 -53.8 -63.2 -76.0 -87.7 -100.4 -114.9 -135.0 -162.1 168.8 147.8 125.6 103.6 88.8 74.5 0.21 0.38 0.54 0.70 0.85 1.00 1.12 1.27 1.37 1.43 1.39 1.29 1.24 1.11 1.00 0.90 0.82 0.74 25.0 22.0 20.3 19.1 18.1 17.4 14.6 13.0 11.9 11.1 10.7 10.6 10.3 10.7 11.8 11.6 11.1 10.5 Measurement plane (2.6mm) Recommended foot pattern; RO4003C/Rogers (r=3.38, t=0.508mm) Publication Date : Mar., 2012 4 < Power GaAs FET > MGF1941AL Micro-X type plastic package S PARAMETERS f (GHz) S11 Mag. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 0.988 0.955 0.907 0.845 0.776 0.698 0.629 0.570 0.535 0.522 0.534 0.568 0.604 0.642 0.673 0.724 0.761 0.787 Angle S21 Mag. Angle S12 Mag. -17.8 -35.7 -54.0 -73.0 -92.9 -113.8 -138.1 -161.9 174.6 153.1 132.8 114.5 97.1 82.1 67.1 57.1 44.9 34.2 3.647 3.602 3.549 3.478 3.394 3.266 3.101 2.904 2.706 2.535 2.382 2.249 2.091 1.981 1.844 1.685 1.531 1.364 161.6 143.8 125.9 108.0 90.2 72.6 54.1 37.0 21.0 5.8 -9.3 -24.4 -39.2 -53.6 -69.7 -84.9 -99.4 -114.1 0.019 0.038 0.054 0.069 0.081 0.090 0.096 0.098 0.097 0.094 0.095 0.099 0.101 0.107 0.114 0.118 0.122 0.126 (Conditions:VDS=3V,ID=10mA,Ta=25deg.C) S22 K MAG/MSG Angle Mag. Angle (dB) 77.8 66.0 54.5 43.2 32.1 21.8 11.1 1.1 -6.2 -10.7 -13.9 -17.3 -22.4 -25.9 -32.4 -39.5 -45.4 -53.4 0.625 0.609 0.581 0.544 0.498 0.445 0.384 0.325 0.272 0.234 0.211 0.207 0.212 0.250 0.322 0.386 0.450 0.528 -11.5 -23.0 -34.5 -46.1 -57.9 -69.2 -83.6 -97.2 -111.8 -127.8 -148.2 -173.7 159.9 140.7 120.7 99.9 85.7 72.0 0.16 0.29 0.41 0.54 0.66 0.81 0.95 1.12 1.29 1.45 1.51 1.46 1.44 1.32 1.20 1.06 0.96 0.86 22.8 19.8 18.1 17.0 16.2 15.6 15.1 12.6 11.2 10.3 9.8 9.6 9.2 9.3 9.4 10.0 11.0 10.3 Measurement plane (2.6mm) Recommended foot pattern; RO4003C/Rogers (r=3.38, t=0.508mm) Publication Date : Mar., 2012 5 < Power GaAs FET > MGF1941AL Micro-X type plastic package Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire ore property damage. 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