MITSUBISHI MGF4921AM

< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
DESCRIPTION
The MGF4921AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in L to C band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
Outline Drawing
FEATURES
・Low noise figure
NFmin. = 0.35dB (Typ.)
@ f=2.4GHz
NFmin. = 0.35dB (Typ.)
@ f=4GHz
・High associated gain
Gs = 18.0dB (Typ.)
@ f=2.4GHz
Gs = 13.0dB (Typ.)
@ f=4GHz
Fig.1
APPLICATION
L to C band low noise amplifiers
MITSUBISHI Proprietary
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10~25mA
ORDERING INFORMATION
Tape & reel
15000pcs/reel
RoHS COMPLIANT
MGF4921AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
Gate to drain voltage
VGSO
ID
Drain current
PT
Tch
Tstg
Parameter
Gate to source voltage
Ratings
Unit
-3
V
-3
V
IDSS
mA
Total power dissipation
130
mW
Channel temperature
125
C
-55 to +125
C
Storage temperature
ELECTRICAL CHARACTERISTICS
Symbol
(Ta=25C )
Parameter
(Ta=25C)
Test conditions
Limits
MIN.
V(BR)GDO
Gate to drain breakdown voltage
IG=-78A
IGSS
Gate to source leakage current
IDSS
Saturated drain current
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
VGS(off)
Gs
NFmin.
Gs
Associated gain
VDS=2V,ID=390A
VDS=2V,
Minimum noise figure
ID=10mA, f=2.4GHz
Associated gain
VDS=2V,
ID=15mA, f=4GHz
Gate to source cut-off voltage
NFmin.
Minimum noise figure
Note 1: Gs and NFmin. @2.4GHz are not tested.
Note 2: Gs and NFmin. @4GHz are tested with sampling inspection.
Publication Date : Oct., 2011
1
TYP.
Unit
MAX
-3.5
--
--
V
--
--
50
A
mA
30
--
150
-0.2
--
-1.5
V
--
18
--
dB
--
0.35
--
dB
11.5
13
--
dB
--
0.35
0.55
dB
< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
2.10 ±0.1
1.30 ±0.05
Fig.1
(0.65) (0.65)
0.30
+0.1
-0.05
+0.1
0.30 -0.05
①
±0.1
±0.1
1.25
Top
2.05
②
C □
②
③
0.40
+0.05
+0.1
0.30 -0.05
+0.1
-0.05
0.11 -0
(0.60) (0.65)
0.49 ±0.05
1.25 ±0.05
Side
③
②
(0.85)
Bottom
①
②
Unit: mm
① Gate
② Source
③ Drain
(GD-30)
Publication Date : Oct., 2011
2
< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
TYPICAL CHARACTERISTICS
(Ta=25°C)
ID vs. VDS
ID vs. VGS
(VDS=2V)
200
200
150
150
Drain Current,ID(mA)
100
50
1
2
3
50
0
-1.0
0
0
100
4
NF &NF&Gs
Gs vs.vs.
ID ID
NF & Gs
vs. f vs f
NF&Gs
2.0
1.6
1.2
15
1.0
0.8
10
0.6
NF
Noise Figure,NF(dB)
1.4
Associated Gain,Gs(dB)
20
0.4
25
VDS=2V
ID=10mA
1.8
Gs
1.6
Noise Figure,NF(dB)
2.0
25
1.8
0.0
Gate to Source Voltage,VGS(V)
Drain to Source Voltage,VDS(V)
f=2.4GHz
VDS=2V
-0.5
5
20
1.4
Gs
1.2
15
1.0
0.8
10
0.6
NF
0.4
5
0.2
0.2
0.0
0
0
5
10
15
20
25
30
0.0
35
0
2.3
Drain Current,ID(mA)
2.4
Frequency,f(GHz)
Publication Date : Oct., 2011
3
2.5
Associated Gain,Gs(dB)
Drain Current,ID(mA)
(VGS=~0.1V/STEP)
< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
TYPICAL CHARACTERISTICS
(Ta=25°C)
NF&Gs vs. ID
NF&Gs vs f
25
VDS=2V
ID=15mA
1.8
20
1.4
Gs
1.2
15
1.0
0.8
10
0.6
NF
0.4
5
1.6
Noise Figure,NF(dB)
1.6
Associated Gain,Gs(dB)
1.8
Noise Figure,NF(dB)
2.0
f=4GHz
VDS=2V
0.2
20
1.4
Gs
1.2
15
1.0
0.8
10
0.6
NF
0.4
5
0.2
0.0
0
0
5
10
15
20
25
30
0.0
35
0
3.9
4.0
Drain Current,ID(mA)
Frequency,f(GHz)
Po,IM3 vs. Pin
Pout , IM3 (dBm)S.C.L
40
OIP 3=21dBm
20
Pout
0
IIP 3=5.0dBm
-20
-40
IM 3
-60
f=2.32GHz, 3MHz offset
-80
-25
-20
-15
-10 -5
0
Pin (dBm)S.C.L
Publication Date : Oct., 2011
4
5
10
15
4.1
Associated Gain,Gs(dB)
25
2.0
< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
S PARAMETERS
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(VDS=2V,ID=10mA,Ta=room temperature)
S11
(mag)
0.951
0.824
0.684
0.557
0.481
0.458
0.461
0.485
0.531
0.576
0.615
0.652
0.710
0.757
0.769
0.798
(ang)
-31.0
-60.7
-89.5
-120.4
-149.3
-177.0
157.6
136.9
120.3
104.2
90.3
78.9
67.2
55.5
44.9
37.2
S21
(mag)
6.561
5.902
5.133
4.387
3.755
3.252
2.833
2.496
2.232
2.029
1.849
1.699
1.565
1.409
1.247
1.104
S12
(ang)
150.5
123.3
99.2
77.6
58.9
42.1
26.6
12.2
-1.0
-14.0
-27.2
-39.6
-52.8
-67.1
-79.8
-91.4
(mag)
0.040
0.074
0.101
0.121
0.139
0.156
0.170
0.185
0.199
0.213
0.227
0.237
0.252
0.257
0.259
0.265
S22
(ang)
74.0
59.6
47.8
37.9
29.8
22.4
15.3
7.9
0.9
-6.6
-14.5
-22.2
-30.5
-39.5
-47.5
-54.5
(mag)
0.394
0.330
0.256
0.186
0.138
0.127
0.149
0.194
0.235
0.281
0.342
0.403
0.460
0.520
0.596
0.658
(ang)
-22.9
-44.8
-66.3
-94.3
-126.6
-165.0
160.4
135.0
117.7
105.0
95.0
83.4
73.6
63.7
54.3
43.1
Measurement plane (2.5mm)
Recommended foot pattern; FR4 (r=4.8@1MHz, t=0.8mm)
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Oct., 2011
5
< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
S PARAMETERS
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
(VDS=2V,ID=15mA,Ta=room temperature)
S11
(mag)
0.937
0.787
0.636
0.512
0.444
0.429
0.440
0.468
0.517
0.563
0.603
0.640
0.697
0.744
0.757
0.786
S21
(ang)
-33.4
-64.5
-93.8
-125.1
-154.1
178.5
153.6
133.6
117.7
102.2
88.7
77.7
66.3
55.0
44.6
37.2
(mag)
7.730
6.735
5.682
4.757
4.019
3.457
2.998
2.635
2.355
2.141
1.954
1.798
1.662
1.506
1.343
1.200
S12
(ang)
148.3
120.1
96.1
75.1
57.2
41.1
26.1
12.3
-0.4
-13.0
-25.9
-37.8
-50.7
-64.8
-77.4
-89.0
(mag)
0.037
0.069
0.095
0.117
0.137
0.156
0.173
0.190
0.205
0.219
0.233
0.243
0.255
0.260
0.261
0.267
S22
(ang)
74.5
61.4
50.7
41.4
33.5
25.8
18.1
10.1
2.3
-5.9
-14.1
-22.3
-30.9
-39.9
-47.9
-54.9
(mag)
0.332
0.269
0.200
0.139
0.102
0.109
0.146
0.197
0.241
0.287
0.345
0.405
0.459
0.515
0.587
0.647
(ang)
-23.6
-45.5
-67.0
-98.3
-137.5
179.6
148.1
126.3
110.9
99.5
90.6
79.8
70.3
61.1
52.3
41.5
Measurement plane (2.5mm)
Recommended foot pattern; FR4 (r=4.8@1MHz, t=0.8mm)
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Oct., 2011
6
< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
S PARAMETERS
S11
S21
S12
S22
(mag) (ang)
(mag) (ang)
(mag) (ang)
(mag) (ang)
0.873
-57.9
5.887
129.1
0.072
54.7
0.383
-50.0
0.853
-64.2
5.870
124.4
0.079
51.9
0.378
-54.0
0.833
-69.7
5.750
119.9
0.084
48.8
0.368
-58.7
0.818
-73.6
5.442
116.1
0.089
45.1
0.363
-65.0
0.795
-79.7
5.401
111.5
0.093
43.0
0.336
-68.9
0.769
-86.7
5.366
106.7
0.098
40.3
0.328
-73.9
0.752
-91.6
5.201
102.8
0.103
37.5
0.320
-78.7
0.737
-96.5
5.029
99.0
0.106
34.4
0.310
-84.8
0.714 -102.4
4.959
94.8
0.109
32.4
0.291
-89.1
0.694 -107.8
4.856
90.7
0.113
30.2
0.282
-93.1
0.680 -113.1
4.733
86.8
0.117
27.7
0.274
-98.2
0.667 -118.0
4.587
83.3
0.119
25.1
0.265 -104.0
0.648 -123.5
4.503
79.3
0.122
23.2
0.252 -108.7
0.634 -128.9
4.399
75.6
0.124
21.2
0.244 -113.4
0.621 -134.2
4.287
72.1
0.127
19.0
0.237 -118.8
0.612 -138.9
4.172
68.7
0.129
16.9
0.229 -124.4
0.602 -143.9
4.068
65.1
0.131
15.0
0.220 -130.1
0.591 -149.4
3.986
61.6
0.133
13.0
0.215 -135.6
0.583 -154.2
3.880
58.3
0.135
11.1
0.209 -140.4
0.577 -159.2
3.785
54.9
0.136
9.1
0.206 -147.0
0.569 -164.4
3.697
51.6
0.138
7.3
0.204 -152.6
NOISE PARAMETERS
(VDS=2V,ID=10mA, Ta=room temperature)
Freq. NFmin
Γopt
(GHz) (dB) (mag) (ang)
2.0
0.36
0.86
13.9
2.2
0.37
0.83
16.5
2.4
0.35
0.81
19.4
2.6
0.33
0.79
22.5
2.8
0.34
0.76
25.7
3.0
0.33
0.74
29.1
3.2
0.35
0.71
32.6
3.4
0.35
0.69
36.4
3.6
0.35
0.66
40.3
3.8
0.37
0.64
44.4
4.0
0.35
0.62
48.6
4.2
0.41
0.60
53.0
4.4
0.39
0.59
57.6
4.6
0.38
0.57
62.3
4.8
0.40
0.56
67.1
5.0
0.38
0.55
72.0
5.2
0.39
0.54
77.1
5.4
0.40
0.54
82.3
5.6
0.40
0.54
87.7
5.8
0.39
0.54
93.1
6.0
0.39
0.55
98.7
Rn
(Ω)
0.23
0.22
0.22
0.21
0.20
0.19
0.19
0.18
0.17
0.16
0.15
0.15
0.14
0.13
0.12
0.12
0.11
0.10
0.10
0.09
0.08
Reference point
Reference point
Gate
Drain
0.96
Freq.
(GHz)
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
6.0
(VDS=2V,ID=10mA,Ta=room temperature)
45ﾟ
2.5mm
Board: r=2.6 (PTFE)
Thickness: 0.4mm
(4-0.4: through-hole)
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Oct., 2011
7
< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
S PARAMETERS
Freq.
(GHz)
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
6.0
(VDS=2V,ID=15mA,Ta=room temperature)
S11
S21
S12
S22
(mag) (ang)
(mag) (ang)
(mag) (ang)
(mag) (ang)
0.851
-61.9
6.821
126.7
0.066
55.4
0.313
-54.2
0.826
-68.4
6.756
121.7
0.072
52.5
0.308
-58.8
0.804
-74.0
6.578
117.2
0.077
49.7
0.298
-63.9
0.789
-78.5
6.248
113.4
0.082
46.3
0.292
-70.9
0.762
-84.7
6.160
108.7
0.085
44.5
0.270
-74.7
0.734
-91.7
6.063
103.8
0.090
41.9
0.262
-80.6
0.716
-96.8
5.857
100.0
0.094
39.4
0.255
-85.9
0.701 -102.0
5.661
96.2
0.097
36.6
0.246
-92.5
0.677 -107.8
5.544
91.9
0.100
34.8
0.231
-97.3
0.657 -113.2
5.397
88.0
0.104
32.7
0.223 -101.9
0.643 -118.7
5.244
84.2
0.107
30.5
0.217 -107.5
0.629 -123.8
5.076
80.7
0.109
28.2
0.210 -113.8
0.612 -129.2
4.965
76.8
0.112
26.5
0.198 -119.4
0.599 -134.5
4.826
73.2
0.115
24.6
0.194 -124.8
0.587 -139.9
4.692
69.7
0.117
22.6
0.190 -130.7
0.578 -144.6
4.557
66.4
0.119
20.7
0.185 -136.9
0.570 -149.6
4.435
63.0
0.122
19.0
0.180 -143.5
0.561 -155.0
4.326
59.6
0.124
17.1
0.178 -149.4
0.554 -159.8
4.207
56.4
0.126
15.4
0.175 -154.7
0.549 -164.8
4.096
53.2
0.128
13.6
0.175 -161.7
0.543 -169.9
3.993
49.9
0.130
11.9
0.177 -167.5
NOISE PARAMETERS
0.96
(VDS=2V,ID=15mA, Ta=room temperature)
Freq. NFmin
Γopt
Rn
(GHz) (dB) (mag) (ang)
(Ω)
2.0
0.33
0.80
12.7
0.20
2.2
0.33
0.77
15.3
0.19
2.4
0.35
0.75
18.2
0.19
2.6
0.33
0.72
21.1
0.18
2.8
0.32
0.70
24.3
0.17
Reference point
Reference point
3.0
0.34
0.67
27.7
0.16
3.2
0.36
0.65
31.3
0.16
Gate
Drain
3.4
0.31
0.63
35.1
0.15
3.6
0.32
0.61
39.0
0.14
3.8
0.32
0.59
43.2
0.13
4.0
0.35
0.58
47.5
0.13
4.2
0.34
0.56
52.0
0.12
4.4
0.35
0.55
56.6
0.12
45ﾟ
4.6
0.36
0.54
61.5
0.11
2.5mm
4.8
0.34
0.53
66.4
0.10
5.0
0.35
0.53
71.6
0.10
Board: r=2.6 (PTFE)
5.2
0.33
0.53
76.8
0.09
Thickness: 0.4mm
5.4
0.36
0.53
82.3
0.09
(4-0.4: through-hole)
5.6
0.37
0.54
87.9
0.08
5.8
0.36
0.55
93.6
0.07
6.0
0.38
0.56
99.4
0.07
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Oct., 2011
8
< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
S PARAMETERS
S11
S21
S12
S22
(mag) (ang)
(mag) (ang)
(mag) (ang)
(mag) (ang)
0.839
-63.7
7.275
125.6
0.064
55.9
0.283
-56.2
0.813
-70.2
7.173
120.5
0.069
53.2
0.278
-61.1
0.790
-75.9
6.969
116.0
0.074
50.4
0.268
-66.5
0.773
-80.6
6.635
112.1
0.078
47.3
0.261
-73.6
0.747
-86.9
6.513
107.4
0.082
45.4
0.241
-77.6
0.718
-93.8
6.383
102.6
0.086
42.9
0.234
-84.0
0.699
-99.0
6.161
98.7
0.090
40.5
0.228
-89.6
0.683 -104.3
5.951
94.9
0.093
37.9
0.220
-96.4
0.660 -110.1
5.808
90.7
0.096
36.2
0.206 -101.6
0.640 -115.4
5.641
86.9
0.100
34.2
0.199 -106.4
0.625 -120.9
5.476
83.1
0.103
32.1
0.194 -112.3
0.612 -126.2
5.297
79.6
0.105
29.9
0.188 -118.9
0.596 -131.5
5.171
75.9
0.108
28.3
0.178 -125.0
0.583 -136.7
5.018
72.3
0.111
26.4
0.175 -130.5
0.571 -142.2
4.872
68.8
0.114
24.5
0.173 -136.7
0.564 -146.9
4.730
65.6
0.116
22.7
0.169 -143.2
0.556 -151.8
4.598
62.2
0.118
21.0
0.166 -150.1
0.547 -157.2
4.480
58.9
0.121
19.2
0.165 -156.1
0.541 -162.0
4.354
55.7
0.123
17.5
0.163 -161.5
0.536 -167.0
4.237
52.5
0.125
15.7
0.165 -168.6
0.531 -172.0
4.126
49.4
0.127
14.1
0.169 -174.3
NOISE PARAMETERS
(VDS=2V,ID=20mA, Ta=room temperature)
Freq. NFmin
Γopt
(GHz) (dB) (mag) (ang)
2.0
0.34
0.78
12.5
2.2
0.32
0.76
15.0
2.4
0.33
0.74
17.9
2.6
0.34
0.72
20.9
2.8
0.31
0.70
24.0
3.0
0.32
0.68
27.4
3.2
0.30
0.66
31.0
3.4
0.33
0.64
34.8
3.6
0.33
0.62
38.7
3.8
0.34
0.60
42.9
4.0
0.33
0.59
47.2
4.2
0.32
0.57
51.7
4.4
0.33
0.56
56.3
4.6
0.34
0.55
61.1
4.8
0.35
0.54
66.1
5.0
0.33
0.54
71.2
5.2
0.34
0.53
76.5
5.4
0.32
0.53
81.9
5.6
0.34
0.53
87.5
5.8
0.35
0.53
93.2
6.0
0.34
0.54
99.0
Rn
(Ω)
0.19
0.18
0.18
0.17
0.16
0.15
0.15
0.14
0.13
0.13
0.12
0.12
0.11
0.10
0.10
0.09
0.08
0.08
0.07
0.07
0.06
Reference point
Reference point
Gate
Drain
0.96
Freq.
(GHz)
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
6.0
(VDS=2V,ID=20mA,Ta=room temperature)
45ﾟ
2.5mm
Board: r=2.6 (PTFE)
Thickness: 0.4mm
(4-0.4: through-hole)
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Oct., 2011
9
< Low Noise GaAs HEMT >
MGF4921AM
4pin flat lead package
Keep safety first in your circuit designs!
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Publication Date : Oct., 2011
10