MITSUBISHI MGF4953B_11

< Low Noise GaAs HEMT >
MGF4953B
Leadless ceramic package
DESCRIPTION
The MGF4953B super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure
@ f=20GHz
NFmin. = 0.55dB (Typ.)
High associated gain
@ f=20GHz
Gs = 10.5dB (Typ.)
Fig.1
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
MITSUBISHI Proprietary
GG
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel
Tape & reel
10,000pcs/reel
10,000pcs/reel
(MGF4953B-01)
(MGF4953B-70)
RoHS COMPLIANT
MGF4953B is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
Gate to drain voltage
VGSO
ID
Gate to source voltage
-3
V
Drain current
60
mA
Total power dissipation
50
mW
Channel temperature
125
C
Storage temperature
-55 to +125
C
PT
Tch
Tstg
Parameter
(Ta=25C )
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Ratings
Unit
-3
V
(Ta=25C )
Test conditions
Limits
Unit
MIN.
TYP.
MAX
Gate to drain breakdown voltage
IG=-10A
-3
--
--
IGSS
Gate to source leakage current
--
--
50
A
IDSS
Saturated drain current
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
15
--
60
mA
-0.1
--
-1.5
V
9.0
10.5
--
dB
--
0.55
0.80
dB
V(BR)GDO
VGS(off)
Gs
Gate to source cut-off voltage
Associated gain
VDS=2V,ID=500A
VDS=2V,
ID=10mA,f=20GHz
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
Publication Date : Apr., 2011
1
V
< Low Noise GaAs HEMT >
MGF4953B
Leadless ceramic package
Fig.1
Side
Top
+0.20
2.15 -0.10
Bottom
+0.20
-0.10
2.15
③


5
0.0
J 5
6EG

2-R0.20

③

②
②

0)
2-R0.275
.2
(2
①
①

0.20±0.1
0.80±0.1
20±
0.5
5
0.0
(0.30)
Square shape electrode is Drain
(2.30)
from "A" side view
Unit: mm
① Gate
② Source
③ Drain
Publication Date : Apr., 2011
2
②
±

)
.02
(1
2
0
1.2
②
2-
A
0.0
±
.0 55
4-
5
< Low Noise GaAs HEMT >
MGF4953B
Leadless ceramic package
TYPICAL CHARACTERISTICS
(Ta=25°C)
ID vs. V DS
ID VS. V GS
50
50
Ta=25℃
V DS=2V
40
Drain Current ID(mA)
Drain Current
ID (mA)
Ta=25℃
V GS=-0.1V /STEP
30
20
30
20
10
10
0
0
0
1
2
-1.00
3
NF & Gs V S. ID
1.3
13
Ta=25℃
V DS=2V
f =20GHz
1.1
12
11
Gs
1.0
10
0.9
9
0.8
8
0.7
7
NF
0.6
6
0.5
5
0.4
雑音最小電力利得 Gs (dB)
1.2
4
0
5
10
15
-0.50
Gate
Source voltage
V GS(V)
GATE
TOto SOURCE
VOLTAGE
Drain
Source voltage
V DS(V) VDS (V)
DRAIN
TOtoSOURCE
VOLTAGE
雑音指数 NF (dB)
40
20
ドレイン電流 ID (mA )
DRAIN CURRENT ID (mA)
Publication Date : Apr., 2011
3
0.00
VGS (V)
< Low Noise GaAs HEMT >
MGF4953B
Leadless ceramic package
S PARAMETERS
Freq.
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
(VDS=2V,ID=10mA, Ta=25C)
S11
(mag)
0.989
0.968
0.942
0.927
0.857
0.787
0.716
0.654
0.582
0.525
0.494
0.474
0.471
0.484
0.501
0.544
0.579
0.612
0.646
0.688
0.733
0.765
0.798
0.831
0.831
0.814
S21
(ang)
-4.0
-20.4
-36.8
-53.2
-69.5
-85.8
-101.5
-119.2
-135.3
-152.8
-170.2
171.2
152.0
134.6
118.4
101.2
86.8
73.6
62.0
50.3
39.4
28.6
17.7
6.9
-3.9
-14.7
(mag)
5.212
5.101
4.989
4.877
4.766
4.655
4.524
4.378
4.162
4.008
3.887
3.761
3.656
3.593
3.522
3.335
3.209
3.038
2.814
2.726
2.613
2.499
2.384
2.269
2.152
2.034
S12
(ang)
166.6
152.0
137.3
122.7
108.0
93.4
79.3
64.9
52.0
39.5
27.3
15.2
2.9
-9.4
-21.9
-36.1
-49.3
-62.7
-73.7
-85.1
-96.7
-108.3
-120.0
-131.6
-143.2
-154.8
(mag)
0.038
0.046
0.054
0.062
0.070
0.078
0.085
0.093
0.095
0.095
0.096
0.096
0.097
0.096
0.095
0.098
0.099
0.101
0.102
0.107
0.112
0.115
0.119
0.123
0.127
0.131
S22
(ang)
82.4
72.4
62.4
52.4
42.4
32.4
23.5
13.5
4.9
-2.5
-8.4
-14.2
-20.6
-26.0
-33.2
-37.5
-42.9
-49.3
-56.2
-63.9
-75.1
-86.3
-97.5
-108.7
-119.9
-131.1
(mag)
0.689
0.669
0.640
0.604
0.554
0.505
0.454
0.399
0.341
0.288
0.250
0.212
0.180
0.159
0.155
0.163
0.182
0.216
0.260
0.301
0.340
0.370
0.405
0.444
0.483
0.522
(ang)
-10.7
-21.1
-31.5
-41.9
-52.4
-62.7
-72.7
-84.1
-93.6
-102.8
-113.0
-124.7
-140.4
-156.4
-175.5
153.3
132.4
110.1
90.7
76.3
59.0
48.0
37.0
30.2
23.1
17.1
NOISE PARAMETERS (VDS=2V, ID=10mA, Ta=25C)
Freq.
(GHz)
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
NFmin
(dB)
0.38
0.40
0.43
0.45
0.48
0.50
0.53
0.57
0.63
0.72
0.80
0.92
1.00
1.14
1.24
opt
(mag)
(ang)
0.44
140.9
0.40
160.3
0.38
-179.4
0.36
-158.4
0.36
-136.6
0.36
-114.2
0.38
-91.2
0.39
-67.9
0.41
-44.5
0.45
-21.1
0.48
2.1
0.54
25.2
0.57
48.1
0.61
70.9
0.63
93.6
Rn
(Ω)
2.5
1.5
2.0
2.0
3.0
4.0
6.0
8.5
11.5
15.0
19.0
24.0
29.5
37.5
50.0
Measurement plane (2.2mm)
Board; RO4003C (Rogers Corp.)
r=3.38, t=0.508mm, Au (Cu) =0.035mm
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Apr., 2011
4
< Low Noise GaAs HEMT >
MGF4953B
Leadless ceramic package
S PARAMETERS
(VDS=2V,ID=10mA, Ta=25C)
S11
Freq.
S21
S12
S22
(GHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
1
0.989
-13.0
4.537
165.8
0.014
78.9
0.637
(ang)
-9.7
2
0.973
-25.9
4.502
152.9
0.028
71.8
0.629
-19.6
3
0.949
-38.7
4.472
140.4
0.041
62.7
0.621
-29.2
4
0.926
-52.0
4.460
127.3
0.054
53.2
0.608
-39.0
5
0.890
-64.9
4.431
114.9
0.066
44.4
0.592
-48.2
6
0.828
-81.1
4.394
99.8
0.076
33.4
0.539
-60.1
7
0.776
-95.6
4.311
86.3
0.085
24.1
0.505
-70.2
8
0.723
-110.6
4.230
73.2
0.093
15.2
0.469
-80.4
9
0.662
-126.6
4.094
59.9
0.099
5.4
0.423
-90.7
10
0.605
-142.6
3.943
47.4
0.102
-4.0
0.368
-100.2
11
0.551
-158.2
3.826
35.4
0.102
-12.9
0.318
-108.8
12
0.514
-174.5
3.740
23.7
0.100
-19.7
0.279
-116.3
13
0.488
167.0
3.622
11.2
0.099
-28.1
0.232
-126.2
14
0.486
149.0
3.572
-1.1
0.098
-32.1
0.203
-138.3
15
0.480
131.8
3.512
-12.6
0.094
-38.4
0.169
-148.1
16
0.509
113.0
3.425
-26.2
0.099
-43.0
0.148
-175.1
17
0.536
95.1
3.349
-39.1
0.099
-49.9
0.133
157.1
18
0.569
78.2
3.226
-52.1
0.100
-58.5
0.132
120.7
19
0.609
62.7
3.091
-66.1
0.099
-66.5
0.160
92.2
20
0.642
47.3
2.934
-79.2
0.096
-75.2
0.204
67.8
21
0.674
34.3
2.752
-91.8
0.091
-83.8
0.250
50.6
22
0.707
21.1
2.617
-104.8
0.089
-92.5
0.293
37.0
23
0.742
9.2
2.471
-117.4
0.082
-102.8
0.350
23.8
24
0.753
-2.2
2.307
-130.2
0.081
-111.9
0.390
13.5
25
26
0.775
0.803
-12.5
-22.5
2.139
2.008
-142.4
-155.0
0.072
0.069
-118.9
-135.9
0.430
0.474
2.4
-5.7
Freq.
(GHz)
18
20
22
24
26
(VDS=2V,ID=10mA, Ta=25C)
opt
(mag)
0.358
0.372
0.390
0.417
0.473
Rn
(ang)
-137.2
-91.0
-47.7
-14.9
10.5
0.12
0.14
0.63
1.05
1.26
NFmin
(dB)
0.51
0.55
0.77
1.05
1.25
Board: r=2.6
Thickness=0.4mm
Note) Rn is normalized by 50ohm
HEMT mount
Drain
Gate
4-φ0.4
0.65
Reference Point
2.2mm
1.20
NOISE PARAMETERS
1.0mm
Reference Point
Note:
We are ready to provide nonlinear model for ADS and MWO users. If you are interested, please contact our sales
offices.
Publication Date : Apr., 2011
5
< Low Noise GaAs HEMT >
MGF4953B
Leadless ceramic package
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Publication Date : Apr., 2011
6