MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 16W (TYP.) @ f=5.2 - 5.8 GHz High power gain GLP = 10.5 dB (TYP.) @ f=5.2 - 5.8GHz High power added efficiency P.A.E. = 31 % (TYP.) @ f=5.2 - 5.8GHz 15.8 8.0+/-0.2 (2) 2MIN 17.4+/-0.3 R1.2 (3) 5.2 - 5.8 GHz band power amplifier 4.0+/-0.4 0.1 13.4 QUALITY GRADE 1.4 IG (1): GATE (2): SOURCE (FLANGE) (3): DRAIN RECOMMENDED BIAS CONDITIONS GF-18 VDS = 10 (V) ID = 4.5 (A) RG=25 (ohm) ABSOLUTE MAXIMUM RATINGS 2.4+/-0.2 20.4+/-0.2 APPLICATION (Ta=25deg.C) < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into Symbol Parameter Ratings Unit VGDO Gate to drain voltage -15 V but there is always the possibility that trouble may occur VGSO Gate to source voltage -15 V with them. Trouble with semiconductors may lead to personal Drain current 15 A injury, fire or property damage. Remember to give due IGR Reverse gate current -40 mA consideration to safety when making your circuit designs, IGF Forward gate current 84 mA with appropriate measures such as (1)placement of PT Total power dissipation 78.9 W Tch Channel temperature 175 deg.C Tstg Storage temperature -65 / +175 deg.C ID *1 making semiconductor products better and more reliable, substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25deg.C ELECTRICAL CHARACTERISTICS Symbol IDSS gm VGS(off) P1dB GLP ID P.A.E. Rth(ch-c) Parameter (Ta=25deg.C) Test conditions Limits Typ. 9 Max. 12 Unit Saturated drain current VDS = 3V , VGS = 0V Min. - Transconductance VDS = 3V , ID = 4.4A - 4 - S Gate to source cut-off voltage VDS = 3V , ID = 80mA -2 -3 -4 V 41.5 42.5 - dBm dB Output power at 1dB gain compression Linear power gain 8 10.5 - Drain current - 4.5 - A Power added efficiency - 31 - % - - 1.9 deg.C/W Thermal resistance VDS=10V, ID(RF off)=4.5A, f=5.2 - 5.8GHz A *1 delta Vf method *1 : Channel-case MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004