< L/S band internally matched power GaAs FET > MGFS45B2527B 2.5 – 2.7 GHz BAND / 30W DESCRIPTION The MGFS45B2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 – 2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class AB operation Internally matched to 50(ohm) system High output power Po(SAT)=30W (TYP.) @f=2.5 – 2.7GHz High power gain GLP=12.5dB (TYP.) @f=2.5 – 2.7GHz Distortion EVM=1.0% (TYP.) @f=2.5 – 2.7GHz, Po=34dBm EVM=2.0% (TYP.) @f=2.5 – 2.7GHz, Po=37dBm RECOMMENDED BIAS CONDITIONS VDS=12V ID=0.9A RG=10ohm Absolute maximum ratings Symbol Keep Safety first in your circuit designs! (Ta=25C) Ratings Unit Gate to drain breakdown voltage -15 V VGSO Gate to source breakdown voltage -10 V MAXID Maximum drain current 10 A PT *1 Total power dissipation 78 W Tch Cannel temperature 175 C Tstg Storage temperature -55 to +150 C VGDO Parameter Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. *1 : Tc=25C Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Limits Min. VGS(off) Po(SAT) Gate to source cut-off voltage VDS=3V,ID=100mA Output Power VDS=12V,ID(RF off)=0.9A GLP Power Gain VDS=12V,ID(RF off)=0.9A ID Drain current f=2.5 – 2.7GHz ,Pout=34dBm EVM *2 Error Vector Magnitude Rth(ch-c) *3 Thermal resistance Unit Typ. Max. -0.5 - -3.0 V - 45 - dBm 10.0 12.5 - dB - 1.2 1.5 A - 1.0 2.0 % - 1.2 1.9 C/W f=2.5 – 2.7GHz delta Vf method *2 :WiMAX Downlink, 64QAM-3/4, Channel Bandwidth:6MHz *3 :Channel-case Publication Date : Apr., 2011 1 < L/S band internally matched power GaAs FET > MGFS45B2527B 2.5 – 2.7 GHz BAND / 30W MGFS45B2527B TYPICAL CHARACTERISTICS EVM,GP,ED(@WiMAX) vs. Pout Test Condition Vds=12V,Idq=0.9A,Ta=25deg.C WiMAX:64QAM-3/4,Bw=6MHz EVM,Gain(@WiMAX) vs. f Test Condition Vds=12V,Idq=0.9A,Pout=34dBm,Ta=25deg.C WiMAX:64QAM-3/4,Bw=6MHz Publication Date : Apr., 2011 2 < L/S band internally matched power GaAs FET > MGFS45B2527B 2.5 – 2.7 GHz BAND / 30W MGFS45B2527B RF TEST FIXTURE Publication Date : Apr., 2011 3 < L/S band internally matched power GaAs FET > MGFS45B2527B 2.5 – 2.7 GHz BAND / 30W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Apr., 2011 4