VISHAY DG2011

DG2011
Vishay Siliconix
Low-Voltage, Low rON, Single SPDT Analog Switch
In SC-89 Package
FEATURES
BENEFITS
D Low Voltage Operation
(1.8 V to 5.5 V)
D Low On-Resistance - rON:
1.8 W @ 2.7 V
D Low Charge Injection
D Low Voltage Logic Compatible
D SC-89 Package (1.6 x 1.6 mm)
Pb-free
Available
D
D
D
D
D
APPLICATIONS
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
Guaranteed 2-V Operation
D
D
D
D
D
D
D
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample and Hold Circuits
ADC and DAC Applications
Low Voltage Data Acquisition
Systems
DESCRIPTION
The DG2011 is a low on-resistance, single-pole/double-throw
monolithic CMOS analog switch. It is designed for low voltage
applications with guaranteed operation at 2 V. The DG2011 is
ideal for portable and battery powered equipment, requiring
high performance and efficient use of board space. In
additional to the low on-resistance (1.8 Ω @ 2.7 V), charge
injection is less than 10 pC over the entire analog range.
Break-before-make is guaranteed.
The switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
As a committed partner to the community and the environment,
Vishay Siliconix manufactures this product with the
lead (Pb)-free device terminations. For analog switching
products manufactured with 100% matte tin device
terminations, the lead (Pb)-free “—E3” suffix is being used as
a designator.
The DG2011 is built on Vishay Siliconix’s low voltage JI2
process. An epitaxial layer prevents latchup.
The DG2011 represents a breakthrough in packaging
development for analog switching products. The SC-89
package (1.6 x 1.6 mm2) – also know as SOT-666 in the
industry – reduces board spacing by approximately 40% while
obtaining performance comparable to SC-70 analog switch
devices available today.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
SC-89
IN
1
6
NO (Source1)
V+
2
5
COM
GND
3
4
NC (Source2)
Top View
TRUTH TABLE
Logic
NC
NO
0
ON
OFF
1
OFF
ON
COMMERCIAL ORDERING INFORMATION
Ax
Temp Range
Pin 1
Device Marking: Ax
x = Date/Lot Traceability Code
Document Number: 70102
S-50509—Rev. E, 21-Mar-05
-40 to 85°C
Package
Part Number
SC-89 (SOT-666)
with Tape and Reel
DG2011DX-T1
SC-89 (SOT-666)
Lead (Pb)-Free
with Tape and Reel
DG2011DX-T1—E3
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1
DG2011
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (NO, NC, COM pins) . . . . . . . . . . . . . . . . . . . "150 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "300 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Power Dissipation (Packages)b
SC-89c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 2.15 mW/_C above 70_C
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 2.0 V, VIN = 0.4 or 1.6 Ve
Limits
−40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
5.5
5.5
W
Analog Switch
Analog Signal Ranged
On-Resistance
Switch Off Leakage Currentf
VNO, VNC,
VCOM
rON
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Current f
ICOM(on)
V+ = 2.0 V, VCOM = 0.2 V/0.9 V
INO, INC = 20 mA
V+ = 2.2 V
VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V
V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V
Room
Full
3.5
Room
Full
−1
−10
1
10
Room
Full
−1
−10
1
10
Room
Full
−1
−10
1
10
1.5
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Cin
Full
Input Current
IINL or IINH
VIN = 0 or V+
Full
0.4
4
1
V
pF
1
mA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
tBBM
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
CNO(off),
CNC(off)
Channel-On Capacitanced
CON
VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF
Room
Full
75
110
113
Room
Full
37
71
76
Room
CL = 1 nF, VGEN = 0 V, RGEN = 0 W
RL = 50 W,
W CL = 5 pF,
pF f = 1 MHz
VIN = 0 or V+, f = 1 MHz
1
ns
37
Room
7
Room
−62
Room
−69
Room
29
Room
85
pC
dB
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
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2
1.8
VIN = 0 or V+
0.01
5.5
V
1.0
mA
Document Number: 70102
S-50509—Rev. E, 21-Mar-05
DG2011
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Parameter
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Limits
−40 to 85_C
Tempa
Minb
VNO, VNC,
VCOM
Full
0
rON
Room
Full
Symbol
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON Match
rON Flatness
Switch Off Leakage Current
DrON
rON
Flatness
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Current
ICOM(on)
V = 2.7
V+
2 7 V,
V VCOM = 0
0.9
9 V/1
V/1.5
5V
INO, INC = 50 mA
1.8
Room
0.2
Room
V+ = 3.3 V, VNO, VNC = 1 V/3 V
VCOM = 3 V/1 V
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
2.7
2.9
0.2
W
0.5
Room
Full
−1
−10
1
10
Room
Full
−1
−10
1
10
Room
Full
−1
−10
1
10
1.6
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Input Current
Full
Cin
IINL or IINH
0.4
VIN = 0 or V+
Full
4
1
V
pF
1
mA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make Time
tBBM
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
CNO(off),
CNC(off)
Channel-On Capacitanced
CON
VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF
Room
Full
45
75
77
Room
Full
29
59
62
Room
CL = 1 nF, VGEN = 0 V, RGEN = 0 W
RL = 50 W,
W CL = 5 pF,
pF f = 1 MHz
VIN = 0 or V+, f = 1 MHz
1
ns
16
Room
2
Room
−62
Room
−68
Room
28
Room
84
pC
dB
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
Power Consumption
PC
1.8
VIN = 0 or V+
0.01
5.5
V
1.0
mA
3.3
mW
Notes:
a.
b.
c.
d.
e.
f.
Room = 25°C, Full = as determined by the operating suffix.
Typical values are for design aid only, not guaranteed nor subject to production testing.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guarantee by design, nor subjected to production test.
VIN = input voltage to perform proper function.
Guaranteed by 5-V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Document Number: 70102
S-50509—Rev. E, 21-Mar-05
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3
DG2011
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
rON vs. Analog Voltage and Temperature
6
6
A: 85_C
B: 25_C
C: −40_C
T = 25_C
5
rON − On-Resistance ( Ω )
rON − On-Resistance ( Ω )
5
4
V+ = 2.0 V
IS = 20 mA
3
2
V+ = 3.0 V
IS = 50 mA
V+ = 5.0 V
IS = 100 mA
1
V+ = 2.0 V
IS = 20 mA
4
A
B
3
C
2
A
B
V+ = 5.0 V
IS = 100 mA
A
B
C
C
1
0
0
0
1
2
3
4
5
6
0
1
2
VCOM − Analog Voltage (V)
3
4
5
6
VCOM − Analog Voltage (V)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
10000
10 mA
V+ = 5.0 V
VIN = 0 V
V+ = 5.0 V
1 mA
1000
I+ − Supply Current (A)
I+ − Supply Current (pA)
V+ = 3.0 V
IS = 50 mA
100
10
100 mA
10 mA
1 mA
100 nA
10 nA
1 nA
1
100 pA
−60
−40
−20
0
20
40
60
80
100
100
1k
Temperature (_C)
Leakage Current vs. Temperature
1M
10 M
100 M
Leakage vs. Analog Voltage
V+ = 5.0 V
200
V+ = 5.0 V
150
ION(off)/INC(off)
Leakage Current (pA)
1000
Leakage Current (pA)
100 k
250
10000
100
10 k
Input Switching Frequency (Hz)
ICOM(on)
ICOM(off)
10
100
ICOM(off)
50
ICOM(on)
0
−50
ION(off)/INC(off)
−100
−150
−200
−250
1
−60
−40
−20
0
20
40
Temperature (_C)
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4
60
80
100
0
1
2
3
4
5
VCOM, VNO, VNC, − Analog Voltage (V)
Document Number: 70102
S-50509—Rev. E, 21-Mar-05
DG2011
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
Switching Time vs. Temperature and Supply Voltage
10
90
0
tON V+ = 2 V
LOSS
−10
70
60
tON V+ = 3 V
50
40
tOFF V+ = 2 V
tON V+ = 5 V
30
tOFF V+ = 5 V
tOFF V+ = 3 V
20
LOSS, OIRR, XTLAK (dB)
tON, tOFF, − Switchint Time (ns)
80
10
−20
−30
−40
XTALK
−50
OIRR
−60
−70
V+ = 5.0 V
RL = 50 W
−80
0
−60
−90
−40
−20
0
20
40
60
80
100
100 K
1M
10 M
2.5
20
ÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍ
ÍÍÍÍÍÍÍ
1.5
1.0
0.5
1G
Charge Injection vs. Analog Voltage
30
Q − Charge Injection (pC)
VT − Switchint Threshold (V)
Switching Threshold vs. Supply Voltage
3.0
2.0
100 M
Frequency (Hz)
Temperature (_C)
V+ = 2 V
10
V+ = 5 V
0
V+ = 3 V
−10
−20
0.0
−30
0
1
2
3
4
5
V+ − Supply Voltage (V)
Document Number: 70102
S-50509—Rev. E, 21-Mar-05
6
7
0
1
2
3
4
5
6
VCOM − Analog Voltage (V)
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DG2011
Vishay Siliconix
TEST CIRCUITS
V+
+3V
Logic
Input
V+
NO or NC
Switch
Input
0V
Switch Output
COM
VOUT
RL
300 W
GND
0.9 x VOUT
Switch
Output
IN
Logic
Input
tr t 5 ns
tf t 5 ns
50%
CL
35 pF
0V
tON
0V
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT + VCOM
ǒ
RL
tOFF
Ǔ
R L ) R ON
FIGURE 1. Switching Time
V+
Logic
Input
V+
COM
NO
VNO
3V
tr <5 ns
tf <5 ns
0V
VO
NC
VNC
RL
300 W
IN
CL
35 pF
GND
VNC = VNO
VO
Switch
Output
90%
0V
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+
Rgen
+
V+
NC or NO
COM
IN
Vgen
VOUT
CL
3V
DVOUT
VOUT
IN
On
On
Off
GND
Q = DVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 3. Charge Injection
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Document Number: 70102
S-50509—Rev. E, 21-Mar-05
DG2011
Vishay Siliconix
TEST CIRCUITS
V+
10 nF
V+
COM
0V, 2.4 V
IN
COM
NC or NO
Off Isolation + 20 log
RL
GND
VNCńNO
VCOM
Analyzer
FIGURE 4. Off-Isolation
V+
10 nF
V+
COM
Meter
0 V, 2.4 V
IN
NC or NO
HP4192A
Impedance
Analyzer
or Equivalent
GND
f = 1 MHz
FIGURE 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70102.
Document Number: 70102
S-50509—Rev. E, 21-Mar-05
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