MITSUBISHI RA45H7687M1_11

< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H7687M1 is a 45-watt RF MOSFET Amplifier Module for
12.8-volt mobile radios that operate in the 763- to 870-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small
leakage current flows into the drain and the nominal output signal
(Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is
supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the gate
voltage 1 is kept in 3.4V. The nominal output power becomes
available at the state that VGG2 is 4V (typical) and 5V (maximum).
At this point, VGG1 has to be kept in 3.4V.
At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.8V, VGG=0V)
BLOCK DIAGRAM
2
3
1
4
5
1
RF Input added Gate Voltage 1(Pin&VGG1)
2
Gate Voltage 2(VGG2), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
• Pout>45W, T>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
• Broadband Frequency Range: 763-870MHz
PACKAGE CODE: H2M
• Metal cap structure that makes the improvements of RF radiation
simple
• Low-Power Control Current IGG1+IGG2=0.4mA (typ) @ VGG1=3.4V, VGG2=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output
power with the input power.
RoHS COMPLIANCE
• RA45H7687M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA45H7687M1-101
Antistatic tray,
10 modules/tray
Publication Date : Oct．2011
1
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG1=3.4V ± 7%, VGG2<5V, Pin=0W
17
V
VGG1
Gate Voltage 1
VGG2<5V, VDD<12.8V, Pin=50mW
4.5
V
VGG2
Gate Voltage 2
VGG1=3.4V ± 7%, VDD<12.8V, Pin=50mW
6
V
100
mW
60
W
-30 to +100
°C
-40 to +110
°C
Pin
Input Power
Pout
Output Power
Tcase(OP)
Tstg
f=763-870MHz,
Operation Case Temperature Range
VGG1=3.4V ± 7%, VGG2<5V
Storage Temperature Range
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
F
CONDITIONS
Frequency Range
MIN
TYP
MAX
UNIT
763
-
870
MHz
Pout1
Output Power 1
VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
45
-
-
W
T
Total Efficiency
VDD=12.8V
33
-
-
%
2
nd
Harmonic
VGG1=3.4V
-
-
-40
dBc
3fo
3
nd
Harmonic
VGG2=5V
-
-
-35
dBc
in
Input VSWR
Pin=50mW
-
-
3:1
—
IDD
Leakage Current
VDD=17V, VGG1=VGG2=0V, Pin=0W
-
-
1
mA
Pout2
Output Power 2*
VDD=15.2V, VGG1=3.4V, VGG2=1V, Pin=2dBm
-
-
1.5
W
2fo
—
Stability
—
Load VSWR Tolerance
VDD=10.0-15.2V, Pin=1-100mW,
1.5<Pout <50W (VGG2 control, VGG1=3.4V),
Load VSWR=3:1
VDD=15.2V, Pin=50mW,
Pout=45W (VGG2 control, VGG1=3.4V),
Load VSWR=20:1
*: This is guaranteed as design value.
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Oct．2011
2
No parasitic oscillation
—
No degradation or destroy
—
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
nd
rd
OUTPUT POWER, TOTAL EFFICIENCY,
versus FREQUENCY
2 , 3 HARMONICS versus FREQUENCY
80
-30
Pout
70
-40
HARMONICS (dBc)
TOTAL EFFICIENCY(%)
OUTPUT POWER Pout (W)
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
60
50
hT
40
V DD=12.8V
V GG1=3.4V
V GG2=5V
Pin=50m W
30
20
10
760
780
800
820
840
FREQUENCY f (MHz)
860
INPUT VSWR r in (-)
V DD=12.8V
V GG1=3.4V
V GG2=5V
Pin=50m W
3
1
760
r in
780
800
820
840
FREQUENCY f (MHz)
860
-50
-60
-80
760
880
5
2
3rd
2nd
-70
INPUT VSWR versus FREQUENCY
4
V DD=12.8V
V GG1=3.4V
V GG2=5V
Pin=50m W
880
Publication Date : Oct．2011
3
780
800
820
840
FREQUENCY f (MHz)
860
880
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
60
16
30
12
4
0
-5
0
5
10
15
16
30
12
20
10
I DD
-5
20
Gp
16
30
12
20
8
f=870MHz
V DD=12.8V
V GG1=3.4V
V GG2=5V
4
0
0
-10
-5
0
5
10
15
80
70
60
10
40
8
I DD
30
4
10
2
0
4
10
40
8
I DD
6
Pout
20
4
10
2
0
OUTPUT POWER Pout (W)
12
0
8
10
12
6
8
10
12
14
16
90
DRAIN CURRENT I DD (A)
OUTPUT POWER Pout (W)
14
6
6
20
2
16
50
4
12
0
18
2
14
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
f=806MHz
V GG1=3.4V
V GG2=5V
Pin=50m W
30
16
Pout
DRAIN VOLTAGE V DD (V)
90
60
20
50
20
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
70
15
18
f=764MHz
V GG1=3.4V
V GG2=5V
Pin=50m W
INPUT POWER P in (dBm)
80
10
90
OUTPUT POWER Pout (W)
Pout
DRAIN CURRENT I DD (A)
POWER GAIN Gp (dB)
OUTPUT POWER Pout (dBm)
24
I DD
5
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
60
10
0
INPUT POWER P in (dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
40
4
0
-10
20
INPUT POWER P in (dBm)
50
8
f=806MHz
V DD=12.8V
V GG1=3.4V
V GG2=5V
0
0
-10
Gp
40
DRAIN CURRENT I DD (A)
I DD
10
8
f=764MHz
V DD=12.8V
V GG1=3.4V
V GG2=5V
20
14
18
f=870MHz
V GG1=3.4V
V GG2=5V
Pin=50m W
80
70
60
16
14
12
50
10
40
8
I DD
30
6
Pout
20
4
10
2
0
16
0
2
4
6
8
10
12
DRAIN VOLTAGE V DD (V)
DRAIN VOLTAGE V DD (V)
Publication Date : Oct．2011
4
14
16
DRAIN CURRENT I DD (A)
20
50
DRAIN CURRENT I DD (A)
40
24
Pout
POWER GAIN Gp (dB)
20
Gp
DRAIN CURRENT I DD (A)
50
OUTPUT POWER Pout (dBm)
Pout
POWER GAIN Gp (dB)
OUTPUT POWER Pout (dBm)
60
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
12
10
Pout (dBm )
40
8
30
6
Pout (W)
10
4
f=764MHz
V DD=12.8V
V GG1=3.4V
Pin=50m W
I DD
2
0
1
2
3
4
40
8
30
6
I DD
20
OUTPUT POWER Pout (W) (dBm)
40
8
6
I DD
4
f=870MHz
V DD=12.8V
V GG1=3.4V
Pin=50m W
2
DRAIN CURRENT I DD (A)
OUTPUT POWER Pout (W) (dBm)
10
Pout (dBm )
Pout (W)
0
1
2
3
4
40
30
6
I DD
20
4
10
2
0
1
2
3
4
5
OUTPUT POWER Pout (W) (dBm)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2
10
Pout (dBm )
8
30
6
20
4
I DD
2
DRAIN CURRENT I DD (A)
OUTPUT POWER Pout (W) (dBm)
8
0
12
10
10
Pout (dBm )
GATE VOLTAGE V GG2 (V)
60
40
5
12
f=764MHz
V DD=12.8V
V GG1=3.4V
Pin=2dBm
50
5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2
50
4
60
GATE VOLTAGE V GG2 (V)
f=806MHz
V DD=12.8V
V GG1=3.4V
Pin=2dBm
3
Pout (W)
0
0
2
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2
12
10
1
GATE VOLTAGE V GG2 (V)
60
20
2
0
0
5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2
30
4
f=806MHz
V DD=12.8V
V GG1=3.4V
Pin=50m W
Pout (W)
10
GATE VOLTAGE V GG2 (V)
50
10
Pout (dBm)
0
0
0
50
60
12
f=870MHz
V DD=12.8V
V GG1=3.4V
Pin=2dBm
50
40
10
Pout (dBm )
8
30
6
I DD
20
4
Pout (W)
10
2
Pout (W)
0
0
1
2
3
4
DRAIN CURRENT I DD (A)
20
12
0
5
0
1
GATE VOLTAGE V GG2 (V)
2
3
4
GATE VOLTAGE V GG2 (V)
Publication Date : Oct．2011
5
5
DRAIN CURRENT I DD (A)
50
60
DRAIN CURRENT I DD (A)
60
OUTPUT POWER Pout (W) (dBm)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2
DRAIN CURRENT I DD (A)
OUTPUT POWER Pout (W) (dBm)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
OUTLINE DRAWING (mm)
67±1
④
18±1
10.7±1
③
15±1
① ②
4±0.5
49.8±1
2-R2±0.5
19.4±1
(3.26)
60±1
12.5±1
0.6±0.2
17±1
44±1
（2.6）
（9.9）
3.1+0.6/-0.4
7.3±0.5
56±1
Publication Date : Oct．2011
6
1
RF Input added Gate Voltage 1(Pin & VGG1)
2
Gate Voltage 2(VGG2)
3
Drain Voltage (VDD)
4
RF Output (Pout)
5
RF Ground (Case)
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
TEST BLOCK DIAGRAM
+
DC Pow er
Supply V GG1
Signal
Generator
Attenuator
Preamplifier
Attenuator
DUT
Pow er
Meter
R1
Directional
Coupler
C1
1
2
3
4
Z L=50Ω
Z G=50Ω
C2
Spectrum
Analyzer
5
Directional
Coupler
C3
Attenuator
Pow er
Meter
C4
VGG1
A
+
DC Pow er
Supply V GG2
C1: 4700pF, C2: 1000pF, R1: suitable.
C3, C4: 4700pF, 22uF in parallel
VGG1=3.4V
EQUIVALENT CIRCUIT
Please refer the detail below.
+
DC Pow er
Supply V DD
1
RF Input added Gate Voltage 1(Pin & VGG1)
2
Gate Voltage 2(VGG2)
3
Drain Voltage (VDD)
4
RF Output (Pout)
5
RF Ground (Case)
3
4
1
5
2
NOTE: Resistance between Gate Voltage 1, where RF is input, and ground equals to 15k ohm.
External resistance connected to VGG1; impedance between Pin&VGG1 and ground needs to make high impedance
that doesn't prevent RF characteristic on this module.
Publication Date : Oct．2011
7
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is
attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto
metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors,
and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and
RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=45W, VDD=12.8V and Pin=50mW each stage transistor operating conditions are:
Pin
Pout
Rth(ch-case)
IDD @ T=33%
VDD
Stage
(W)
(W)
(°C/W)
(A)
(V)
st
1
0.05
3.0
3.5
0.62
12.8
nd
2
3.0
45.0
0.6
9.96
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.8V x 0.62A – 3.0W + 0.05W) x 3.5°C/W = Tcase + 17.5 °C
Tch2 = Tcase + (12.8V x 9.96A – 45.0W + 3.0W) x 0.6°C/W = Tcase + 51.3 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=45W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) - Pout +
Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (45W/33% - 45W + 0.05W) = 0.33 °C/W
When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage transistor is:
Tch1 = Tair + 47.5 °C
Tch2 = Tair + 81.3 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltages (VGG1 and VGG2).
When the gate voltages are close to zero, the nominal output signal (Pout=45W) is attenuated up to 60 dB and only a
small leakage current flows from the battery into the drain. (On the following, V GG1 has to be kept in 3.4V.)
Around VGG2=0V(minimum), the output power and drain current increases substantially.
Around VGG2=4V (typical) to VGG2=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. (On the following, V GG1 has to be kept in 3.4V.)
VGG2 is used to set the drain’s quiescent current for the required linearity.
Publication Date : Oct．2011
8
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a
4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that
do not leakage the unnecessary electric wave and use this products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal specification
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured under
a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements and In the application, which is base station applications and
fixed station applications that operate with long term continuous transmission and a higher on-off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
period and others as needed. For the reliability report which is described about predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
9
< Silicon RF Power Modules >
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
programs, and algorithms, please be sure to evaluate all information as a total system before making a final
decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no
responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
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Publication Date : Oct．2011
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