< Silicon RF Power MOS FET (Discrete) > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION 3.9+/-0.3 LOT No. 0.8 MIN 2.5+/-0.1 High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. 1.5+/-0.1 1.6+/-0.1 TYPE NAME 1 0. φ 1 2 1.5+/-0.1 3 0.4 +0.03 -0.05 1.5+/-0.1 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.1 MAX Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm RoHS COMPLIANT RD01MUS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. However, It is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance (Tc=25°C UNLESS OTHERWISE NOTED) CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50 Junction to case RATINGS 30 +/-10 3.6 100 600 150 -40 to +125 34.5 UNIT V V W mW mA °C °C °C/W Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER IDSS IGSS Vth Pout D Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency (Tc=25°C, UNLESS OTHERWISE NOTED) CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=30mW f=520MHz,Idq=100mA Note: Above parameters, ratings, limits and conditions are subject to change. Publication Date : Oct．2011 1 MIN 1.3 0.8 50 LIMITS TYP 1.8 1.4 65 UNIT MAX 50 1 2.3 - uA uA V W % < Silicon RF Power MOS FET (Discrete) > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE Vgs-Ids CHARACTERISTICS 1.0 Ta=+25°C Vds=10V *1:The material of the PCB Glass epoxy (t=0.6 mm) 0.8 3 On PCB(*1) with Heat-sink Ids(A) CHANNEL DISSIPATION Pch(W) ... 4 2 1 On PCB(*1) 0.6 0.4 0.2 0.0 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(°C) 0 200 Vds-Ids CHARACTERISTICS 2 3 Vgs(V) 4 5 Vds VS. Ciss CHARACTERISTICS 2.5 Ta=+25°C 2 Vgs=10V Vgs=9V 20 Vgs=8V 18 Vgs=7V 16 Vgs=5V 1 Ciss(pF) 1.5 Ta=+25°C f=1MHz 14 Vgs=6V Ids(A) 1 12 10 8 6 Vgs=4V 4 0.5 2 Vgs=3V 0 0 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 20 4 18 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 16 3 14 12 Crss(pF) Coss(pF) 5 10 8 6 2 1 4 2 0 0 0 5 10 Vds(V) 15 0 20 Publication Date : Oct．2011 2 5 10 Vds(V) 15 20 < Silicon RF Power MOS FET (Discrete) > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS Gp 25 1.6 80 70 15 60 10 50 Ta=+25°C f=520MHz Vdd=7.2V Idq=100mA 5 0 -10 ηd(%) ηｄ 20 10 0.5 Idd 2.0 0.4 1.5 0.3 1.0 0.2 0.5 0.1 0.0 Idd(A) Po(W) 0.7 0.6 2.5 0.0 4 6 8 10 Vdd(V) 0.8 12 40 Ta=25°C f=520MHz Vdd=7.2V Idq=100mA 0.6 Idd 20 0 0 0.8 Po 60 1.0 20 40 Pin(mW) 4.0 3.0 ηd 1.2 0.0 20 Vdd-Po CHARACTERISTICS 3.5 1.4 0.2 Pin(dBm) Ta=25°C f=520MHz Pin=30mW Idq=100mA Zg=ZI=50 ohm 80 0.4 40 30 0 100 Po 1.8 90 Pout(W) , Idd(A) 30 Po(dBm) , Gp(dB) , Idd(A) 2.0 100 Po 14 Publication Date : Oct．2011 3 60 ηd(%) 35 < Silicon RF Power MOS FET (Discrete) > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TEST CIRCUIT(f=520MHz) Vdd Vgg C1 10μF、50V C2 11mm W W 18mm 68pF 5mm 4.7kOHM RD01MUS1 6.5mm 4mm 30mm 13mm 4mm 62pF 24pF L4 3mm 20.5mm L3 25.5mm 4mm 5.5mm 3pF RF-in W 10pF 3pF 62pF 68 OHM 240pF L1：Enameled wire 5 Turns、D：0.43mm、2.46mmO.D Note:Boad material Glass epoxi substrate Micro strip line width=1.0mm、50 OHM、er:4.8、t=0.6mm C1、C2:1000ｐF、0.022μF in parallel INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 520MHz Zin* Zout* Zo=50 Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W Zin* =3.11+j11.56 Zout*=11.64+j4.74 520MHz Zin* 520MHz Zout* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of output impedance Publication Date : Oct．2011 4 RF-OUT < Silicon RF Power MOS FET (Discrete) > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W RD01MSU1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA) Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.927 0.875 0.833 0.811 0.798 0.791 0.790 0.788 0.794 0.796 0.798 0.801 0.807 0.813 0.817 0.825 0.831 0.837 0.845 0.851 0.857 0.862 (ang) -77.0 -101.2 -117.9 -129.5 -138.0 -144.5 -149.7 -154.1 -158.0 -159.2 -161.2 -164.2 -167.0 -169.3 -171.6 -174.0 -176.0 -178.0 -179.9 178.2 176.5 174.7 S21 (mag) (ang) 19.536 132.3 15.657 116.5 12.662 105.0 10.427 96.2 8.814 89.3 7.548 83.3 6.541 78.2 5.789 73.5 5.106 69.0 4.876 67.5 4.576 65.2 4.120 61.3 3.714 58.0 3.389 54.7 3.092 51.3 2.820 48.6 2.616 46.0 2.401 42.8 2.207 40.9 2.076 38.4 1.912 35.5 1.773 34.0 S12 (mag) 0.043 0.050 0.053 0.054 0.053 0.052 0.051 0.049 0.047 0.046 0.045 0.043 0.041 0.039 0.036 0.033 0.031 0.028 0.026 0.023 0.021 0.018 S22 (ang) 41.3 26.5 16.1 8.4 2.6 -2.4 -6.6 -9.9 -13.3 -14.1 -15.8 -18.5 -21.0 -22.3 -24.9 -25.7 -26.8 -27.8 -27.3 -27.0 -26.3 -23.8 (mag) 0.772 0.687 0.630 0.600 0.588 0.583 0.590 0.597 0.608 0.615 0.622 0.636 0.650 0.666 0.680 0.694 0.711 0.723 0.734 0.749 0.760 0.771 (ang) -63.0 -83.1 -97.3 -107.1 -114.4 -120.1 -124.6 -128.4 -131.7 -133.1 -134.8 -137.3 -140.1 -142.4 -144.6 -146.8 -148.8 -150.9 -152.9 -154.5 -156.3 -158.2 RD01MSU1 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA) Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.945 0.896 0.856 0.833 0.819 0.810 0.806 0.804 0.808 0.809 0.812 0.813 0.819 0.824 0.827 0.834 0.841 0.845 0.852 0.857 0.864 0.868 (ang) -72.3 -96.7 -113.9 -126.2 -135.1 -141.9 -147.7 -152.2 -156.4 -157.8 -159.9 -163.0 -166.0 -168.6 -171.0 -173.3 -175.5 -177.4 -179.4 178.6 176.9 175.0 S21 (mag) (ang) 19.517 135.2 15.937 119.5 13.050 107.7 10.830 98.6 9.194 91.6 7.890 85.3 6.868 80.1 6.084 75.3 5.382 70.7 5.139 69.1 4.831 66.7 4.356 62.7 3.931 59.3 3.597 56.0 3.283 52.4 2.991 49.8 2.779 47.1 2.554 43.8 2.350 41.9 2.209 39.4 2.035 36.3 1.889 34.8 Publication Date : Oct．2011 5 S12 (mag) 0.039 0.046 0.049 0.050 0.050 0.049 0.047 0.046 0.044 0.044 0.042 0.040 0.038 0.036 0.034 0.031 0.029 0.026 0.024 0.022 0.019 0.017 S22 (ang) 44.5 29.2 18.5 11.2 5.0 -0.3 -4.2 -7.7 -11.0 -12.4 -13.7 -16.2 -18.7 -20.8 -22.3 -23.7 -24.6 -25.9 -25.4 -24.3 -23.5 -20.1 (mag) 0.742 0.665 0.612 0.581 0.568 0.565 0.571 0.580 0.591 0.596 0.605 0.618 0.633 0.649 0.664 0.678 0.695 0.708 0.720 0.736 0.747 0.759 (ang) -57.4 -76.6 -90.6 -100.4 -107.8 -113.8 -118.5 -122.3 -126.1 -127.5 -129.4 -132.2 -135.1 -137.6 -140.1 -142.5 -144.5 -146.7 -148.9 -150.7 -152.4 -154.6 < Silicon RF Power MOS FET (Discrete) > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : Oct．2011 6 < Silicon RF Power MOS FET (Discrete) > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. •Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. •All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/). •When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. •Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Oct．2011 7