MITSUBISHI RD02MUS1_11

< Silicon RF Power MOS FET (Discrete) >
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DRAWING
DESCRIPTION
0.2+/-0.05
specifically designed for VHF/UHF RF power
1
1.0+/-0.05
4.9+/-0.15
amplifiers applications.
FEATURES
2
INDEX MARK
(Gate)
Pout>2W, Gp>16dB
0.2+/-0.05
High Efficiency: 65%typ. (175MHz)
High Efficiency: 65%typ. (520MHz)
0.9+/-0.1
@Vdd=7.2V,f=175MHz, 520MHz
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
APPLICATION
For output stage of high power amplifiers
In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
is a RoHS compliant products.
RoHS compliance is indicating by the letter “G” after the Lot Marking.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
Publication Date : Oct.2011
1
(0.22)
3
(0.25)
High power gain:
RD02MUS1-101,T112
(0.22)
6.0+/-0.15
2.0+/-0.05
RD02MUS1 is a MOS FET type transistor
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
3.5+/-0.05
OUTLINE
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
Drain to source voltage
Vgs=0V
30
V
VGSS
Gate to source voltage
Vds=0V
+/-20
V
Pch
Channel dissipation
Tc=25°C
21.9
W
Pin
Input Power
Zg=Zl=50
0.1
W
ID
Drain Current
-
1.5
A
Tch
Junction temperature
-
150
°C
Tstg
Storage temperature
-
-40 to +125
°C
Rth j-c
Thermal resistance
5.7
°C/W
Junction to case
Note: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
(Tc=25°C, UNLESS OTHERWISE NOTED)
CONDITIONS
LIMITS
UNIT
MIN
TYP
MAX.
IDSS
Zero gate Voltage drain current VDS=17V, VGS=0V
-
-
100
uA
IGSS
Gate to source leak current
VGS=10V, VDS=0V
-
-
1
uA
Gate threshold Voltage
VDS=12V, IDS=1mA
1
1.8
3
V
Output power
VDD=7.2V, Pin=50mW,
2
3
-
W
Drain efficiency
f=175MHz Idq=200mA
55
65
-
%
Output power
VDD=7.2V, Pin=50mW,
2
3
-
W
Drain efficiency
f=520MHz Idq=200mA
50
65
-
%
Vth
Pout1
D1
Pout2
D2
VDD=9.2V,Po=2W(Pin Control)
Load VSWR tolerance
f=175MHz,Idq=200mA,Zg=50
No destroy
-
No destroy
-
Load VSWR=20:1(All Phase)
VDD=9.2V,Po=2W(Pin Control)
Load VSWR tolerance
f=520MHz,Idq=200mA,Zg=50
Load VSWR=20:1(All Phase)
Note: Above parameters, ratings, limits and conditions are subject to change.
Publication Date : Oct.2011
2
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
CHANNEL DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.8 mm)
20
On heat-sink
15
10
Ids
2.0
1.5
1.0
GM
On PCB (*1)
with through hole
and Heat-sink
5
Ta=+25°C
Vds=7.2V
2.5
Ids(A),GM(S)
CHANNEL DISSIPATION Pch(W)
...
25
Vgs-Ids CHARACTERISTICS
3.0
0.5
0.0
0
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(deg:C.)
Vds-Ids CHARACTERISTICS
4
5
40
Vgs=8V
Ta=+25°C
Ta=+25°C
f=1MHz
Vgs=7V
4.0
30
3.5
Vgs=6V
3.0
Ciss(pF)
Ids(A)
2
3
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
Vgs=9V
5.0
4.5
1
2.5
Vgs=5V
2.0
20
1.5
10
Vgs=4V
1.0
0.5
Vgs=3V
0
0.0
0
2
4
6
Vds(V)
8
0
10
Vds VS. Coss CHARACTERISTICS
5
10
Vds(V)
15
20
Vds VS. Crss CHARACTERISTICS
40
6
Ta=+25°C
f=1MHz
Ta=+25°C
f=1MHz
5
30
Crss(pF)
Coss(pF)
4
20
3
2
10
1
0
0
0
5
10
Vds(V)
15
0
20
Publication Date : Oct.2011
3
5
10
Vds(V)
15
20
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
@f=175MHz
Pin-Po CHARACTERISTICS
@f=175MHz
90
80
ηd
25
70
20
60
15
50
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=200mA
5
0
-10
-5
0
5 10
Pin(dBm)
15
40
80
ηd
2.0
1.0
Idd
0.0
20
0
20
20
60
15
50
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=200mA
5
0
-5
0
5 10
Pin(dBm)
15
40
Pout(W) , Idd(A)
70
ηd(%)
Po(dBm) , Gp(dB) ,
Idd(A)
80
ηd
10
4
Idd
3
80
ηd
1.0
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=200mA
Idd
0.0
20
0
60
40
20
40
60
Pin(mW)
80
20
100
Vdd-Po CHARACTERISTICS
@f=520MHz
7
1.2
6
1.0
5
0.8
4
0.6
Po(W)
Po(W)
5
100
2.0
20
Idd(A)
6
Po
20
100
30
1.4
Ta=25°C
f=175MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
80
3.0
Vdd-Po CHARACTERISTICS
@f=175MHz
7
40
60
Pin(mW)
Po
90
Gp
-10
20
4.0
100
Po
25
40
Pin-Po CHARACTERISTICS
@f=520MHz
40
30
60
30
Pin-Po CHARACTERISTICS
@f=520MHz
35
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=200mA
1.4
Ta=25°C
f=520MHz
Pin=50mW
Idq=200mA
Zg=ZI=50 ohm
Po
1.2
1.0
0.8
Idd
3
0.6
2
0.4
2
0.4
1
0.2
1
0.2
0
0.0
0
2
4
6
8
Vdd(V)
10
ηd(%)
10
3.0
12
0.0
2
Publication Date : Oct.2011
4
4
6
8
Vdd(V)
10
12
Idd(A)
Gp
Pout(W) , Idd(A)
30
100
Po
ηd(%)
35
Po(dBm) , Gp(dB) ,
Idd(A)
4.0
100
Po
ηd(%)
40
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2
4
Vds=10V
Tc=-25~+75°C
-25°C
+25°C
Ids(A)
3
+75°C
2
1
0
2
3
4
Vgs(V)
5
6
Publication Date : Oct.2011
5
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
TEST CIRCUIT(f=175MHz)
Vgg
Vdd
C2
C1
10μF,50V
15mm
19mm
L3
4.7K ohm
10pF
11.5mm
3mm
5mm
3mm
3.3mm
6.5mm
12mm
5mm
L2
39pF
13.5mm
3mm
43pF
10pF
62pF
RF-in
L1
680 ohm
240pF
L1:Enameled wire 5 Turns,D:0.43mm,2.46mmm O.D
L2:Enameled wire 3 Turns,D:0.43mm,2.46mmm O.D
L3:Enameled wire 9 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
RD02MUS1
175MHz
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
C2
C1
10μF,50V
15mm
19mm
L1
4.7K ohm
11mm
26.5m
m
RF-in
62pF
20mm
2mm
10mm
3mm
4.5m
m
18pF
6pF
43pF
40.5mm RF-OUT
62pF
680 ohm
240pF
L1:Enameled wire 9 Turns,D:0.43mm,2.46mmm O.D
C1,C2:1000pF,0.0022μF in parallel
RD02MUS1
520MHz
Note:Board material PTFE substrate
Micro strip line width=2.2mm/50 ohm,er:2.7,t=0.8mm
Publication Date : Oct.2011
6
12mm
5mm
62pF
RF-OUT
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
175MHz Zin* Zout*
Zo=50
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
Zin*=11.61+j17.88
Zout*=6.83+j5.21
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input
outputimpedance
impedance
175MHz Zin*
175MHz Zout*
520MHz Zin* Zout*
Zo=50
Vdd=7.2V, Idq=200mA(Vgg adj.),Pin=0.05W
Zin*=1.20+j5.47
Zout*=5.56+j1.31
520MHz Zin*
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
520MHz Zout*
Publication Date : Oct.2011
7
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
RD02MUS1 S-PARAMETER DATA (@Vdd=7.2V, Id=200mA)
Freq.
[MHz]
100
150
175
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
0.814
0.807
0.804
0.804
0.806
0.812
0.817
0.824
0.830
0.837
0.840
0.844
0.851
0.857
0.862
0.869
0.873
0.879
0.882
0.886
0.889
0.891
0.896
(ang)
-132.9
-147.2
-151.6
-154.8
-159.4
-162.6
-164.9
-166.8
-168.5
-169.7
-170.3
-171.1
-172.3
-173.3
-174.4
-175.5
-176.6
-177.5
-178.5
-179.6
179.5
178.4
177.2
S21
(mag)
(ang)
16.154
102.5
11.503
92.9
9.965
89.3
8.689
86.2
6.872
81.1
5.687
76.5
4.749
72.3
4.078
69.3
3.560
65.2
3.087
62.8
2.960
61.9
2.767
59.8
2.439
57.1
2.196
55.2
1.987
52.6
1.796
51.0
1.632
49.1
1.520
47.6
1.366
45.3
1.281
45.6
1.197
42.5
1.077
42.1
1.047
41.3
S12
(mag)
0.039
0.040
0.040
0.040
0.039
0.038
0.036
0.035
0.033
0.031
0.030
0.030
0.028
0.025
0.024
0.022
0.020
0.019
0.017
0.015
0.014
0.012
0.011
S22
(ang)
14.9
5.9
2.7
-0.1
-4.3
-8.2
-11.4
-13.2
-16.8
-17.4
-17.9
-19.1
-20.9
-20.9
-21.9
-23.3
-21.9
-20.4
-21.1
-18.4
-17.2
-11.9
-6.6
(mag)
0.591
0.585
0.586
0.590
0.606
0.621
0.639
0.659
0.677
0.697
0.705
0.715
0.731
0.747
0.763
0.773
0.787
0.799
0.806
0.818
0.826
0.832
0.840
(ang)
-125.5
-138.6
-142.6
-145.5
-149.3
-151.7
-153.5
-155.2
-156.6
-157.8
-158.4
-159.2
-160.6
-161.8
-162.9
-164.3
-165.5
-166.5
-167.7
-169.0
-170.0
-171.1
-172.6
RD02MUS1 S-PARAMETER DATA (@Vdd=12.5V, Id=200mA)
Freq.
[MHz]
100
150
175
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
0.829
0.820
0.817
0.815
0.817
0.822
0.827
0.833
0.838
0.846
0.848
0.852
0.858
0.863
0.868
0.874
0.879
0.884
0.888
0.890
0.894
0.895
0.899
(ang)
-127.5
-143.3
-148.2
-151.8
-157.0
-160.7
-163.3
-165.5
-167.3
-168.8
-169.3
-170.2
-171.6
-172.6
-173.8
-175.0
-176.1
-177.1
-178.2
-179.3
179.8
178.6
177.5
S21
(mag)
(ang)
16.693
104.9
12.079
94.6
10.504
90.7
9.178
87.5
7.273
82.0
6.018
77.3
5.033
72.8
4.317
69.6
3.772
65.5
3.269
63.0
3.132
62.0
2.928
59.8
2.582
57.1
2.324
55.1
2.102
52.5
1.899
50.8
1.726
48.8
1.606
47.3
1.445
45.0
1.351
45.2
1.265
42.1
1.138
41.6
1.104
40.9
Publication Date : Oct.2011
8
S12
(mag)
0.037
0.039
0.039
0.038
0.037
0.036
0.035
0.033
0.032
0.030
0.029
0.028
0.026
0.024
0.023
0.021
0.019
0.017
0.016
0.014
0.013
0.011
0.010
S22
(ang)
17.6
7.8
4.3
1.1
-2.9
-7.1
-10.7
-12.6
-16.2
-16.9
-17.4
-18.7
-20.3
-21.1
-21.8
-24.5
-21.5
-21.5
-21.1
-18.0
-15.9
-11.0
-4.9
(mag)
0.557
0.550
0.551
0.556
0.574
0.592
0.613
0.636
0.656
0.678
0.686
0.698
0.716
0.733
0.750
0.761
0.777
0.789
0.798
0.810
0.818
0.825
0.833
(ang)
-118.4
-132.5
-136.7
-139.9
-144.2
-146.8
-149.0
-150.9
-152.5
-153.9
-154.6
-155.5
-157.0
-158.5
-159.7
-161.2
-162.6
-163.7
-165.0
-166.5
-167.5
-168.7
-170.3
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that have
a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use this products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements and In the application, which is base station applications and
fixed station applications that operate with long term continuous transmission and a higher on-off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
period and others as needed. For the reliability report which is described about predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct.2011
9
< Silicon RF Power MOS FET (Discrete) >
RD02MUS1
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
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•When using any or all of the information contained in these materials, including product data, diagrams, charts,
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•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
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•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct.2011
10