< Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power 6.0+/-0.15 amplifiers applications. 2.0+/-0.05 1. High Power gain and High Efficiency Pout=5.0Wtyp., Gp=14dBtyp. Drain Effi.=53%typ. @Vds=12.5V, Pin=0.2W, f=950MHz 2. Integrated gate protection diode 2 For output stage of high power amplifiers in VHF/ UHF/890-950MHz band mobile radio sets. (0.25) Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) 0.9+/-0.1 0.2+/-0.05 INDEX MARK (Gate) Note ( ):center value UNIT:mm RoHS COMPLIANT RD04HMS2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1. Lead in high melting temperature type solders (i.e. tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) PARAMETER Drain to Source Voltage Gate to Source Voltage Channel Dissipation Input Power Drain Current Junction Temperature Storage Temperature Thermal Resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50 Junction to Case Note: Above parameters are guaranteed independently. Publication Date : Oct．2011 1 RATINGS 40 -5/+10 50 0.7 3 150 -40 to +125 2.5 UNIT V V W W A °C °C °C/W (0.22) 3 (0.25) APPLICATION SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c 3.5+/-0.05 FEATURES 1.0+/-0.05 4.9+/-0.15 1 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS VTH Pout1 D1 Pout2 D2 Zero Gate Voltage Drain Current Gate to Source Leak Current Gate Threshold Voltage Output power Drain Efficiency Output Power Drain Efficiency VSWRT Load VSWR Tolerance CONDITIONS VDS=37V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=950MHz*,VDS=12.5V, Pin=0.2W, Idq=0.1A f=175MHz**,VDS=12.5V, Pin=0.2W, Idq=0.1A VDS=15.2V, Po=4W(Pin:Control) f=135MHz, Idq=0.1A, Zg=50 Zl=All phase MIN 1.6 20:1 Note: Above parameters, ratings, limits and conditions are subject to change. * In Mitsubishi 890-950MHz Evaluation Board ** In Mitsubishi VHF Evaluation Board Publication Date : Oct．2011 2 LIMITS TYP MAX. 5 2.5 2.6 5.0 58 5.5 73 - - UNIT μA μA V W % W % VSWR < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) VDS-IDS CHARACTERISTICS 3.5 VGS-IDS CHARACTERISTICS 3.5 Vgs=5.0V Ta=+25℃ Vgs=4.5V 2.5 2.0 IDS(A) 2.5 IDS(A) Ta=+25℃ VDS=10V 3.0 3.0 Vgs=4.0V 1.5 Vgs=3.5V 2.0 1.5 1.0 1.0 Vgs=3.0V 0.5 0.5 0.0 0.0 0 2 4 6 8 VDS (V) 10 12 0 14 1 50 Ta=+25℃ f=1MHz 5 Ta=+25℃ f=1MHz 40 Coss (pF) Ciss (pF) 4 VDS VS. Coss CHARACTERISTICS 50 30 20 10 30 20 10 0 0 0 5 10 15 VDS(V) VDS VS. Crss CHARACTERISTICS 0 20 5 Ta=+25℃ f=1MHz 4 Crss (pF) 3 VGS(V) VDS VS. Ciss CHARACTERISTICS 40 2 3 2 1 0 0 5 10 VDS(V) 15 20 Publication Date : Oct．2011 3 5 10 VDS(V) 15 20 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W VHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Frequency Characteristics @f=135 to 175MHz Ta=+25deg.C, Vds=12.5V,Idq=0.1A, Pin=0.2W 90 16 ηD 80 14 Gp 70 12 60 10 50 8 40 Pout 6 30 4 20 2 10 Idd 0 130 0 140 150 160 f (MHz) Publication Date : Oct．2011 4 170 180 Drain Effi(%) Pout(W) , Gp(dB), Idd(A) 18 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W VHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Pin-Po CHARACTERISTICS @f=135MHz 8 70 30 60 25 50 Gp 20 40 15 7 30 ηD 10 20 5 Idd 0 5 10 15 Pin(dBm) 20 6 60 5 4 40 3 30 Gp Idd 80 8 35 70 7 30 60 6 50 Gp 20 40 15 Drain Effi(%) Pout(dBm) ,Gp(dB), Idd(A) 25 Pout(W), Idd(A) 9 Pout 30 10 20 ηD 5 0 5 10 15 Pin(dBm) 20 50 Gp 20 40 15 30 ηD 10 Pout(W), Idd(A) 25 20 5 0 5 10 15 Pin(dBm) 20 30 Gp 20 Idd 10 0 0.05 0.1 0.15 0.2 Pin(W) 0.25 0.3 Ta=+25deg.C,Vds=12.5V,Idq=0.1A 90 80 ηD 70 6 60 Pout 5 25 50 4 40 3 30 Gp 20 Idd 1 0 0 40 2 10 Idd 50 7 Drain Effi(%) Pout(dBm) ,Gp(dB), Idd(A) 8 60 60 Pout Pin-Po CHARACTERISTICS @f=175MHz 80 30 80 70 0 9 70 90 3 90 35 0.3 4 Ta=+25deg.C,Vds=12.5V,Idq=0.1A Pout 0.25 ηD 5 Pin-Po CHARACTERISTICS @f=175MHz 40 0.2 0 25 45 0.15 Pin(W) Ta=+25deg.C,Vds=12.5V,Idq=0.1A 1 0 0 0.1 2 10 Idd 0.05 Pin-Po CHARACTERISTICS @f=155MHz 90 40 10 0 0 Pin-Po CHARACTERISTICS @f=155MHz 45 20 0 25 Ta=+25deg.C,Vds=12.5V,Idq=0.1A 50 Pout 1 0 70 ηD 2 10 0 80 Gp(dB), Drain Effi(%) 35 90 Gp(dB), Drain Effi(%) 80 Ta=+25deg.C,Vds=12.5V,Idq=0.1A 10 0 0 0 Publication Date : Oct．2011 5 0.05 0.1 0.15 0.2 Pin(W) 0.25 0.3 Gp(dB), Drain Effi(%) Pout 9 Pout(W), Idd(A) Pout(dBm) ,Gp(dB), Idd(A) 40 Pin-Po CHARACTERISTICS @f=135MHz 90 Drain Effi(%) Ta=+25deg.C,Vds=12.5V,Idq=0.1A 45 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W VHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Ta=25deg.C , Idq=0.1A, Pin=0.2W 7 6 Pout(W) 5 4 3 135MHz 155MHz 2 1 175MHz 0 4 5 6 7 8 9 Vds(V) 10 11 12 13 12 13 Ta=25deg.C , Idq=0.1A , Pin=0.2W 90 155MHz 175MHz 85 Drain Effi(%) 80 75 135MHz 70 65 60 4 5 6 7 8 9 10 Vds(V) Publication Date : Oct．2011 6 11 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W UHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Frequency Characteristics @f=380 to 470MHz Ta=+25deg.C, Vds=12.5V,Idq=0.1A, Pin=0.2W 80 14 Gp 70 12 ηD 60 10 50 8 40 Pout 6 30 4 20 2 Idd 0 10 0 370 380 390 400 410 420 430 440 450 460 470 480 f (MHz) Publication Date : Oct．2011 7 Drain Effi(%) Pout(W) , Gp(dB), Idd(A) 16 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W UHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Pin-Po CHARACTERISTICS @f=380MHz 30 ηD 25 70 7 60 6 50 20 40 Gp 15 30 10 20 5 10 5 10 15 Pin(dBm) 20 4 40 3 30 8 50 20 40 Gp 15 30 10 5 Idd 0 Pout(W), Idd(A) 25 5 10 15 Pin(dBm) 20 Ta=+25deg.C,Vds=12.5V,Idq=0.1A ηD 50 40 30 Gp 0 0.05 0.1 15 30 10 5 Idd 0 Pout(W), Idd(A) 40 Drain Effi(%) Pout(dBm) ,Gp(dB), Idd(A) Gp 20 5 10 15 Pin(dBm) 20 0.3 Ta=+25deg.C,Vds=12.5V,Idq=0.1A 80 70 ηD 60 5 40 3 2 10 1 30 Gp 10 0 Publication Date : Oct．2011 8 20 Idd 0 25 50 Pout 4 20 0 0 0.25 6 60 50 0.15 0.2 Pin(W) Pin-Po CHARACTERISTICS @f=470MHz 8 ηD 20 10 7 25 70 60 0 Ta=+25deg.C,Vds=12.5V,Idq=0.1A Pout 80 0 Pin-Po CHARACTERISTICS @f=470MHz 30 0.3 Idd 25 70 0.25 3 1 35 0 0.2 4 10 80 0.15 Pin(W) Pout 2 40 0.1 5 20 0 0 0.05 6 60 ηD 10 Idd 7 Drain Effi(%) Pout(dBm) ,Gp(dB), Idd(A) Pout 20 Pin-Po CHARACTERISTICS @f=425MHz 70 30 Gp 0 80 35 50 Pout 0 25 Ta=+25deg.C,Vds=12.5V,Idq=0.1A 60 5 Pin-Po CHARACTERISTICS @f=425MHz 40 70 1 0 0 80 ηD 2 Idd 0 Ta=+25deg.C,Vds=12.5V,Idq=0.1A Gp(dB), Drain Effi(%) Pout 8 Drain Effi(%) Pout(dBm) ,Gp(dB), Idd(A) 35 80 0.05 0.1 0.15 0.2 Pin(W) 0 0.25 0.3 Gp(dB), Drain Effi(%) 40 Pout(W), Idd(A) Ta=+25deg.C,Vds=12.5V,Idq=0.1A Gp(dB), Drain Effi(%) Pin-Po CHARACTERISTICS @f=380MHz < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W UHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Ta=25deg.C , Idq=0.1A, Pin=0.2W 7 6 Pout(W) 5 380MHz 4 470MHz 3 2 425MHz 1 0 4 5 6 7 8 9 Vds(V) 10 11 12 13 12 13 Ta=25deg.C , Idq=0.1A , Pin=0.2W 85 80 Drain Effi(%) 75 380MHz 425MHz 70 65 470MHz 60 55 4 5 6 7 8 9 Vds(V) Publication Date : Oct．2011 9 10 11 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W 890-950MHz-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Frequency Characteristics @f=890 to 950MHz Ta=+25deg.C, Vds=12.5V,Idq=0.1A, Pin=0.2W 16 80 Gp 12 70 60 ηD 10 50 8 40 Pout 6 30 4 20 2 10 Idd 0 880 0 890 900 910 920 930 f (MHz) Publication Date : Oct．2011 10 940 950 960 Drain Effi(%) Pout(W) , Gp(dB), Idd(A) 14 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W 890-950MHz-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Pin-Po CHARACTERISTICS @f=890MHz Ta=+25deg.C,Vds=12.5V,Idq=0.1A 35 70 30 60 50 40 Gp 30 10 5 10 15 Pin(dBm) 20 3 10 1 7 70 6 40 Gp 10 20 2 10 1 5 Idd 0 10 15 Pin(dBm) 20 80 35 70 6 60 50 40 Gp 0 0.05 0.1 0.15 0.2 Pin(W) 0.25 0.3 Ta=+25deg.C,Vds=12.5V,Idq=0.1A 70 60 3 30 20 2 10 1 Idd 50 40 10 20 Gp 10 Idd 0 20 10 Pout 30 0 20 Gp 4 15 5 30 5 Pout(W), Idd(A) 25 40 ηD Drain Effi(%) Pout(dBm) ,Gp(dB), Idd(A) 40 ηD Pout Pin-Po CHARACTERISTICS @f=950MHz 7 Pout 50 0 Ta=+25deg.C,Vds=12.5V,Idq=0.1A 10 15 Pin(dBm) 60 0 25 Pin-Po CHARACTERISTICS @f=950MHz 5 70 Idd 0 0 0.3 3 30 20 0.25 Ta=+25deg.C,Vds=12.5V,Idq=0.1A 4 15 30 0.2 5 Pout(W), Idd(A) 50 5 0.15 Pin(W) Gp(dB), Drain Effi(%) 60 25 0 0.1 Pin-Po CHARACTERISTICS @f=920MHz 80 ηD 20 0 0.05 ηD Pout 30 10 0 Drain Effi(%) Pout(dBm) ,Gp(dB), Idd(A) 35 20 Gp 0 Pin-Po CHARACTERISTICS @f=920MHz 40 30 Idd 25 Ta=+25deg.C,Vds=12.5V,Idq=0.1A 40 0 25 0 0 Publication Date : Oct．2011 11 0.05 0.1 0.15 0.2 Pin(W) 0.25 0.3 Gp(dB), Drain Effi(%) 5 50 Pout 2 0 0 ηD 4 20 Idd 0 70 60 5 ηD 20 15 Ta=+25deg.C,Vds=12.5V,Idq=0.1A 6 Pout(W), Idd(A) Pout 25 7 Drain Effi(%) Pout(dBm) ,Gp(dB), Idd(A) 80 Gp(dB), Drain Effi(%) Pin-Po CHARACTERISTICS @f=890MHz 40 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W 890-950MHz-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Ta=25deg.C , Idq=0.1A, Pin=0.2W 7 6 Pout(W) 5 4 890MHz 3 920MHz 2 950MHz 1 0 4 5 6 7 8 9 Vds(V) 10 11 12 13 Ta=25deg.C , Idq=0.1A , Pin=0.2W 70 890MHz 950MHz Drain Effi(%) 65 60 920MHz 55 50 4 5 6 7 8 9 10 Vds(V) Publication Date : Oct．2011 12 11 12 13 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W EQUIVALENT CIRCUITRY for VHF EVALUATION BOARD (f=135 – 175MHz) Vgg C10 Vdd C12 C11 W 21mm C1 8mm 0.5mm L1 0.5mm RD04HMS2 f=135MHz R1 C4 4mm 1.5mm L2 4mm C5 C14 C7 L5 L3 C9 L4 5.5mm RF-in RF-out 3mm 4.5mm 3mm 5.5mm 2mm C6 R2 C2 C13 21mm W C3 7.5mm C8 Note:Board material Glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm W:Line width=1.0mm Chip Ceramic Capacitiors C1 100pF Chip Ceramic Capacitiors C2 27pF Chip Ceramic Capacitiors C3 30pF Chip Ceramic Capacitiors C4 30pF Chip Ceramic Capacitiors C5 36pF Chip Ceramic Capacitiors C6 39pF Chip Ceramic Capacitiors C7 39pF Chip Ceramic Capacitiors C8 24pF Chip Ceramic Capacitiors C9 100pF Chip Ceramic Capacitiors C10 1000pF Chip Ceramic Capacitiors C11 1000pF Chip Ceramic Capacitiors C12 1000pF Chip Ceramic Capacitiors C13 1000pF 22μF Electrolytic Capacitior C14 Chip Resistors R1 4.7K OHM Chip Resistors R2 47 OHM L1 37nH * Enameled wire 7Turns, D:0.43mm, 2.46mmO.D L2 56nH * Enameled wire12Turns, D:0.23mm, 1.66mmO.D L3 22nH * Enameled wire 5Turns, D:0.43mm, 2.46mmO.D L4 29nH * Enameled wire 6Turns, D:0.43mm, 2.46mmO.D L5 37nH * Enameled wire 7Turns, D:0.43mm, 2.46mmO.D * Inductor of Rolling Coil measurement condition : f=100MHz For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-VHF-051” Publication Date : Oct．2011 13 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W EQUIVALENT CIRCUITRY for UHF EVALUATION BOARD (f=380 – 470MHz) Vgg C10 Vdd C12 C11 W 21mm 3.5mm L1 3.5mm 4.0mm L2 3.0mm 4.5mm L3 4.0mm C5 L4 RF-out 14.5mm C2 C3 C4 C9 L5 5.5mm RF-in C1 C14 L6 RD04HMS2 f=470MHz R1 4.0mm C13 21mm W 6.0mm C6 R2 3.0mm C7 1.5mm 1.0mm 5.0mm C8 Note:Board material Glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er:4.8,t=0.8mm W:Line width=1.0mm C1 100pF Chip Ceramic Capacitors C2 6pF Chip Ceramic Capacitors C3 20pF Chip Ceramic Capacitors C4 36pF Chip Ceramic Capacitors C5 24pF Chip Ceramic Capacitors C6 36pF Chip Ceramic Capacitors C7 20pF Chip Ceramic Capacitors C8 7pF Chip Ceramic Capacitors C9 100pF Chip Ceramic Capacitors C10 1000pF Chip Ceramic Capacitors C11 22000pF Chip Ceramic Capacitors C12 1000pF Chip Ceramic Capacitors C13 22000pF Chip Ceramic Capacitors C14 22μF Electrolytic Capacitor R1 4.7K OHM Chip Resistors R2 47 OHM Chip Resistors L1 12nH * Enameled wire 3Turns, D:0.23mm, 1.66mmO.D L2 8nH * Enameled wire 2Turns, D:0.23mm, 1.66mmO.D L3 8nH * Enameled wire 2Turns, D:0.23mm, 1.66mmO.D L4 8nH * Enameled wire 2Turns, D:0.23mm, 1.66mmO.D L5 16nH * Enameled wire 4Turns, D:0.23mm, 1.66mmO.D L6 37nH * Enameled wire 7Turns, D:0.43mm, 2.46mmO.D * Inductor of Rolling Coil measurement condition : f=100MHz For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-UHF-114” Publication Date : Oct．2011 14 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W EQUIVALENT CIRCUITRY for 890-950MHz EVALUATION BOARD (f=890 – 950MHz) Chip Ceramic Capacitiors C1 150pF Chip Ceramic Capacitiors C2 4pF Chip Ceramic Capacitiors C3 9pF Chip Ceramic Capacitiors C4 16pF Chip Ceramic Capacitiors C5 10pF Chip Ceramic Capacitiors C6 12pF Chip Ceramic Capacitiors C7 5pF Chip Ceramic Capacitiors C8 4pF Chip Ceramic Capacitiors C9 150pF Chip Ceramic Capacitiors C10 100pF Chip Ceramic Capacitiors C11 1000pF Chip Ceramic Capacitiors C12 100pF Chip Ceramic Capacitiors C13 1000pF 22μF Electrolytic Capacitior C14 Chip Resistors R1 4.7K OHM Chip Resistors R2 33 OHM L1 37nH * Enameled wire 7Turns, D:0.43mm, 2.46mmO.D * Inductor of Rolling Coil measurement condition : f=100MHz For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-900-043” Publication Date : Oct．2011 15 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W Input / Output Impedance VS. Freqency Characteristics Zin* (f=135, 155, 175MHz) Zo=50ohm f=175MHz f=155MHz f=135MHz @Pin=0.2W, Vds=12.5V,Idq=0.1A f Zin* (MHz) (ohm) 135 34.15 + j 17.78 155 34.90 + j 21.74 175 28.10 + j 24.30 Zin*: Complex conjugate of intput impedance Zout* (f=135, 155, 175MHz) Zo=50ohm @Pin=0.2W, Vds=12.5V,Idq=0.1A f Zout* (MHz) (ohm) 135 14.18 + j 12.41 155 14.45 + j 15.35 175 13.90 + j 15.87 f=175MHz Zout*: Complex conjugate of output impedance f=155MHz f=135MHz Publication Date : Oct．2011 16 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W Input / Output Impedance VS. Freqency Characteristics Zin* (f=380, 425, 470MHz) Zo=50ohm @Pin=0.2W, Vds=12.5V,Idq=0.1A f Zin* (MHz) (ohm) 380 13.33 + j 5.61 425 13.49 + j 7.55 470 10.39 + j 9.64 f=470MHz Zin*: Complex conjugate of intput impedance f=425MHz f=380MHz Zout* (f=380, 425, 470MHz) Zo=50ohm @Pin=0.2W, Vds=12.5V,Idq=0.1A f Zout* (MHz) (ohm) 380 7.83 + j 7.20 425 7.35 + j 7.93 470 6.32 + j 8.95 f=470MHz f=425MHz Zout*: Complex conjugate of output impedance f=380MHz Publication Date : Oct．2011 17 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W Input / Output Impedance VS. Freqency Characteristics Zin* (f=890, 920, 950MHz) Zo=50ohm @Pin=0.2W, Vds=12.5V,Idq=0.1A f Zin* (MHz) (ohm) 890 2.59 + j 3.87 920 2.60 + j 4.81 950 2.67 + j 5.69 f=950MHz Zin*: Complex conjugate of intput impedance f=920MHz f=890MHz Zout* (f=890, 920, 950MHz) Zo=50ohm @Pin=0.2W, Vds=12.5V,Idq=0.1A f Zout* (MHz) (ohm) 890 4.19 + j 3.38 920 4.47 + j 3.99 950 4.83 + j 4.52 Zout*: Complex conjugate of output impedance f=950MHz f=920MHz f=890MHz Publication Date : Oct．2011 18 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W Small Single Parameter of RD04HMS2 (@Vds=12.5V,Idq=100mA) Freq [MHz] 100 135 150 175 200 250 300 350 380 400 450 470 500 550 600 650 700 750 800 850 890 900 950 1000 1050 1100 S11 (mag) 0.813 0.800 0.799 0.799 0.803 0.817 0.829 0.843 0.851 0.856 0.868 0.876 0.884 0.893 0.901 0.907 0.917 0.923 0.928 0.931 0.933 0.934 0.936 0.939 0.941 0.942 (ang) -120.5 -132.2 -136.1 -141.1 -145.1 -151.2 -155.4 -158.7 -160.3 -161.4 -163.7 -164.7 -166.0 -167.7 -169.3 -170.7 -172.2 -173.4 -174.4 -175.4 -176.0 -176.1 -176.8 -177.4 -178.0 -178.4 S21 (mag) 19.034 14.641 13.199 11.253 9.749 7.504 6.002 4.890 4.339 4.069 3.394 3.196 2.894 2.506 2.150 1.840 1.636 1.454 1.263 1.119 1.049 1.035 0.914 0.838 0.758 0.702 S12 (ang) 105.3 96.1 92.8 88.0 83.8 77.0 71.2 66.6 64.5 63.2 59.4 58.5 56.1 54.6 52.7 49.8 49.2 48.5 48.0 46.5 48.2 47.6 46.7 46.8 46.8 48.8 (mag) 0.030 0.031 0.031 0.030 0.030 0.028 0.027 0.025 0.024 0.023 0.022 0.021 0.020 0.018 0.017 0.016 0.014 0.013 0.012 0.011 0.010 0.010 0.008 0.008 0.007 0.006 Publication Date : Oct．2011 19 S22 (ang) 15.3 7.2 4.0 -0.4 -4.2 -10.0 -15.6 -19.4 -21.5 -22.8 -25.5 -26.6 -27.1 -28.6 -30.0 -31.5 -30.4 -31.2 -30.7 -29.9 -30.5 -30.6 -29.0 -28.0 -25.7 -23.6 (mag) 0.585 0.581 0.585 0.595 0.610 0.644 0.679 0.713 0.732 0.744 0.773 0.783 0.797 0.818 0.836 0.852 0.866 0.877 0.888 0.899 0.906 0.908 0.913 0.919 0.924 0.928 (ang) -103.6 -115.2 -118.9 -124.0 -128.0 -134.0 -138.6 -142.4 -144.6 -146.0 -148.9 -150.0 -151.6 -154.0 -156.3 -158.3 -160.1 -161.8 -163.3 -164.7 -165.7 -166.0 -167.1 -168.1 -169.0 -170.0 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : Oct．2011 20 < Silicon RF Power MOS FET (Discrete) > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. •Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. •All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/). •When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. •Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Oct．2011 21