< Silicon RF Power MOS FET (Discrete) > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION OUTLINE DRAWING RD06HHF1 is a MOS FET type transistor specifically 1.3+/-0.4 9.1+/-0.7 High power gain: 12.3MIN Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz APPLICATION 2 9+/-0.4 FEATURES 3.6+/-0.2 4.8MAX 12.3+/-0.6 3.2+/-0.4 designed for HF RF power amplifiers applications. 1.2+/-0.4 0.8+0.10/-0.15 For output stage of high power amplifiers in 1 2 3 HF band mobile radio sets. 0.5+0.10/-0.15 3.1+/-0.6 5deg 9.5MAX RoHS COMPLIANT 4.5+/-0.5 2.5 2.5 PINS 1:GATE 2:SOURCE 3:DRAIN note: Torelance of no designation means typical value. Dimension in mm. RD06HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperaturetype solders. However,it is applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) Publication Date : Oct．2011 1 < Silicon RF Power MOS FET (Discrete) > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 50 V VGSS Gate to source voltage Vds=0V +/- 20 V Pch Channel dissipation Tc=25°C 27.8 W Pin Input power Zg=Zl=50 0.3 W ID Drain current - 3 A Tch Channel temperature - 150 °C Tstg Storage temperature - -40 to +150 °C Rth j-c Thermal resistance 4.5 °C/W LIMITS UNIT junction to case Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Drain cutoff current VDS=17V, VGS=0V - - 10 uA IGSS Gate cutoff current VGS=10V, VDS=0V - - 1 uA VTH Gate threshold Voltage VDS=12V, IDS=1mA 1.9 - 4.9 V Pout Output power VDD=12.5V, Pin=0.15W, 6 10 - W Drain efficiency f=30MHz, Idq=0.5A 55 65 - % Load VSWR tolerance VDD=15.2V,Po=6W(Pin Control) D f=30MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) Note : Above parameters , ratings , limits and conditions are subject to change. Publication Date : Oct．2011 2 No destroy - < Silicon RF Power MOS FET (Discrete) > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 5 CHANNEL DISSIPATION Pch(W) 50 CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 4 30 3 Ids(A) 40 20 Ta=+25°C Vds=10V 2 1 10 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 4 2 Vgs=7V 1 Ciss(pF) Ids(A) Vgs=8V 40 30 20 Vgs=6V 10 Vgs=5V 0 0 8 0 10 10 20 30 Vds(V) Vds VS. Coss CHARACTERISTICS Vds VS. Crss CHARACTERISTICS 100 10 Ta=+25°C f=1MHz 80 Ta=+25°C f=1MHz 8 60 Crss(pF) Coss(pF) 10 Ta=+25°C f=1MHz 50 Vgs=9V 3 4 6 Vds(V) 8 60 Vgs=10V Ta=+25°C 2 4 6 Vgs(V) Vds VS. Ciss CHARACTERISTICS Vds-Ids CHARACTERISTICS 0 2 40 6 4 2 20 0 0 0 10 20 0 30 Vds(V) 10 20 Vds(V) Publication Date : Oct．2011 3 30 < Silicon RF Power MOS FET (Discrete) > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS ηｄ 20 12 80 30 60 40 Gp 10 10 Pin(dBm) 8 70 6 4 Idd 0.2 0.3 Vgs-Ids CHARACTORISTICS 2 4 3 Po 8 2 6 Idd 4 Vds=10V Tc=-25~+75°C 4 Ids(A),GM(S) 10 0.1 5 Idd(A) Po(W) 12 40 Pin(W) 16 14 50 30 0.0 20 Vdd-Po CHARACTERISTICS Ta=25°C f=30MHz Pin=0.15W Idq=0.5A Zg=ZI=50 ohm 60 Ta=25°C f=30MHz Vdd=12.5V Idq=0.5A 0 0 0 80 ηd 2 Ｉｄｄ -10 90 Po 10 20 0 100 1 +25°C -25°C 3 +75°C 2 1 2 0 0 0 4 6 8 10 Vdd(V) 12 0 14 Vgs-gm CHARACTORISTICS 2.0 Vds=10V Tc=-25~+75°C gm(S) 1.5 -25°C 1.0 +25°C 0.5 +75°C 0.0 0 1 2 3 4 5 6 Vgs(V) ηd(%) Po 14 Pout(W) , Idd(A) 40 Po(dBm) , Gp(dB) , Idd(A) 100 Ta=+25°C f=30MHz Vdd=12.5V Idq=0.5A ηd(%) 50 Pin-Po CHARACTERISTICS 7 8 9 Publication Date : Oct．2011 4 2 4 6 Vgs(V) 8 10 < Silicon RF Power MOS FET (Discrete) > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W TEST CIRCUIT(f=30MHz) Vgg Vdd 330uF,50V C1 L2 C1 8.2Kohm 220pF 100pF 1Kohm C2 10uF,50V*3pcs C1 84pF L3 L1 C1 56pF 30pF L4 RF-IN RF-OUT L5 1ohm L6 C2 200/200pF 100pF 220pF 150/120pF 100pF 56pF 1.5 5 16 35 18 36 46 65 42 45 75 77.5 88 91 67 75 91 100 100 C1:100pF, 0.022uF, 0.1uF in parallel C2:470pF*2 in parallel Dimensions:mm Note:Board material PTFE substrate micro strip line width=4.2mm/50ohm,er:2.7,t=1.6mm L1:10Turns,I.D8mm,D0.9mm copper wire L2:10Turns,I.D6mm,D1.6mm silver plated copper wire L3:5Turns,I.D5.6mm,D0.9mm copper wire L4:6Turns,I.D5.6mm,D0.9mm copper wire L5:4Turns,I.D5.6mm,D0.9mm copper wire P=0.5mm L6:7Turns,I.D5.6mm,D0.9mm copper wire Publication Date : Oct．2011 5 < Silicon RF Power MOS FET (Discrete) > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=50Ω f=30MHz Zout f=30MHz Zin Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 30 65.06-j150.9 8.75-j4.92 Po=10W, Vdd=12.5V,Pin=0.15W Publication Date : Oct．2011 6 < Silicon RF Power MOS FET (Discrete) > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W RD06HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.985 0.900 0.799 0.667 0.636 0.630 0.645 0.663 0.685 0.708 0.729 0.752 0.771 0.789 0.804 0.819 0.834 0.842 0.851 0.859 0.866 0.870 (ang) -18.8 -50.4 -74.4 -109.6 -129.0 -140.1 -148.2 -155.0 -160.7 -165.9 -170.8 -175.4 179.9 175.4 171.2 166.9 162.6 158.5 154.3 150.3 146.2 142.3 S21 (mag) (ang) 34.407 165.9 30.427 143.3 24.979 126.1 15.565 100.7 10.953 85.1 8.194 73.7 6.528 63.9 5.315 55.2 4.437 47.4 3.771 39.9 3.233 33.2 2.826 26.8 2.475 20.7 2.186 15.2 1.943 9.7 1.738 4.6 1.560 0.0 1.410 -4.5 1.275 -8.7 1.160 -12.6 1.058 -16.9 0.963 -20.0 Publication Date : Oct．2011 7 S12 (mag) 0.008 0.021 0.029 0.032 0.032 0.029 0.027 0.027 0.031 0.039 0.048 0.059 0.070 0.083 0.095 0.108 0.120 0.133 0.145 0.157 0.167 0.179 S22 (ang) 76.2 59.4 43.2 27.3 23.1 25.3 34.5 49.1 61.8 71.0 75.8 77.9 76.9 76.1 73.7 71.0 68.1 65.0 61.6 58.2 54.5 51.0 (mag) 0.826 0.767 0.677 0.547 0.523 0.528 0.561 0.588 0.622 0.657 0.686 0.715 0.743 0.763 0.789 0.804 0.820 0.837 0.847 0.858 0.869 0.876 (ang) -17.3 -43.6 -65.0 -96.8 -113.4 -124.7 -132.7 -139.6 -145.9 -151.7 -157.0 -162.3 -167.6 -172.3 -177.3 178.1 173.5 169.0 164.8 160.2 155.7 151.8 < Silicon RF Power MOS FET (Discrete) > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : Oct．2011 8 < Silicon RF Power MOS FET (Discrete) > RD06HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Oct．2011 9