< Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) DESCRIPTION High power gain and High Efficiency. Typical Po Gp ηD (175MHz) 7.2W 13.8dB 65% (527MHz) 8W 13.0dB 63% (870MHz) 7W 11.5dB 58% Integrated gate protection diode. 2.0+/-0.05 2 3.5+/-0.05 FEATURES 1.0+/-0.05 4.9+/-0.15 1 APPLICATION 0.9+/-0.1 0.2+/-0.05 INDEX MARK (Gate) (0.25) (0.22) 3 (0.25) Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm For output stage of high power amplifiers in VHF/UHF/800MHz-band mobile radio sets. RoHS COMPLIANT RD07MUS2B is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS SYMBOL (Tc=25°C UNLESS OTHERWISE NOTED) PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 25 V VGSS Gate to source voltage Vds=0V -5/+10 V Pch Channel dissipation Tc=25°C 50 W Pin Input Power Zg=Zl=50 0.8* W ID Drain Current - 3 A Tch Junction Temperature - 150 °C Tstg Storage temperature - -40 to +125 °C Rth j-c Thermal resistance 2.5 °C/W Junction to case Note: Above parameters are guaranteed independently. *: 175MHz spec. is 0.6W Publication Date : Oct．2011 1 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER (Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS CONDITIONS UNIT MIN TYP MAX. IDSS Drain cutoff current VDS=17V, VGS=0V - - 10 uA IGSS Gate cutoff current VGS=5V, VDS=0V - - 1 uA VTH Gate threshold Voltage VDS=7.2V, IDS=1mA 0.5 1 1.5 V Output power f=175MHz,VDD=7.2V - 7.2* - W Drain efficiency Pin=0.3W,Idq=250mA - 65* - % Output power f=527MHz ,VDD=7.2V 7** 8** - W Drain efficiency Pin=0.4W,Idq=250mA 58** 63** - % Output power f=870MHz ,VDD=7.2V - 7*** - W Drain efficiency Pin=0.5W,Idq=250mA - 58*** - % Pout1 D1 Pout2 D2 Pout3 D3 VDD=9.5V,Po=7W(Pin Control) VSWRT Load VSWR tolerance f=527MHz,Idq=250mA,Zg=50 No destroy - Load VSWR=20:1(All Phase) Note: Above parameters, ratings, limits and conditions are subject to change. * At 135-175MHz broad matching ** At 450-527MHz broad matching Publication Date : Oct．2011 2 *** At 763-870MHz broad matching < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) V DS-IDS CHARACTERISTICS V GS-IDS CHARACTERISTICS 7 3.5V 3V 7 Ta=+25°C 6 2.5V 5 IDS (A),g m (S) 5 IDS (A) Ta=+25°C V DS=10V 6 4 2V 3 4 gm 3 IDS 2 2 1 1 V GS=1.5V 0 0 0 2 4 V DS (V) 6 8 0 10 0.5 V DS VS. Ciss CHARACTERISTICS 1.5 V GS (V) 2 2.5 3 V DS VS. Coss CHARACTERISTICS 160 120 140 Ta=+25°C f=1MHz 120 Ta=+25°C f=1MHz 100 80 Coss(pF) 100 Ciss(pF) 1 80 60 60 40 40 20 20 0 0 0 5 10 V DS (V) 15 20 0 V DS VS. Crss CHARACTERISTICS 20 18 Ta=+25°C f=1MHz 16 Crss(pF) 14 12 10 8 6 4 2 0 0 5 10 V DS (V) 15 20 Publication Date : Oct．2011 3 5 10 V DS (V) 15 20 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W TYPICAL CHARACTERISTICS ( 135-175MHz ) (These are only typical curves and devices are not necessarily guaranteed at these curves.) f-Po CHARACTERISTICS @f=135-175MHz 100 20 60 Ta=+25°C Vdd=7.2V Pin=0.3W Idq=250mA ηd Gp 8 40 10 80 6 60 ηd Ta=+25°C Vdd=7.2V Pin=0.3W Idq=250mA 4 Idd 20 40 2 ηd(%) 80 Pout(W) , Idd(A) 30 100 Po Po 40 f-Po CHARACTERISTICS @f=135-175MHz 10 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 50 20 Idd 0 0 135 140 145 150 155 160 165 170 175 f (MHz) Pin-Po CHARACTERISTICS @f=175MHz 100 10 80 8 Pin-Po CHARACTERISTICS @f=175MHz 60 40 Gp Idd 10 25 0 25 15 20 Pin(dBm) 0 0 Ta=+25°C f=175MHz Pin=0.3W Idq=250mA Zg=ZI=50 ohm 15 Po 10 5 4 8 3 6 2 Idd 5 0 3 4 5 6 7 Vdd(V) 8 9 10 2 0 0 Idd 4 20 0.2 0.4 Pin(W) 0 0.8 0.6 Vgg-Po CHARACTERISTICS @f=175MHz Ta=+25°C f=175MHz Pin=0.3W Idq=250mA Zg=ZI=50 ohm 5 Po 4 3 2 Idd 1 0 0 Publication Date : Oct．2011 40 4 1 10 60 Ta=+25°C f=175MHz Vdd=7.2V Idq=250mA 0 30 Vdd-Po CHARACTERISTICS @f=175MHz 20 Po(W) 5 ηd 4 2 80 Idd(A) 0 Po 6 20 Po(W) 10 Ta=+25°C f=175MHz Vdd=7.2V Idq=250mA ηd(%) 20 Pout(W) , Idd(A) ηd 30 Idd(A) Po(dBm) , Gp(dB) , Idd(A) Po 40 100 ηd(%) 50 0 0 135 140 145 150 155 160 165 170 175 f (MHz) 0.4 0.8 1.2 Vgg(V) 1.6 2 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W TYPICAL CHARACTERISTICS ( 450-527MHz ) (These are only typical curves and devices are not necessarily guaranteed at these curves.) f-Po CHARACTERISTICS @f=450-527MHz 100 f-Po CHARACTERISTICS @f=450-527MHz 10 Po 80 60 Ta=+25°C Vdd=7.2V Pin=0.4W Idq=250mA ηd 20 Gp 8 Pout(W) , Idd(A) 40 40 ηd(%) Po(dBm) , Gp(dB) , Idd(A) Po 30 100 80 6 60 ηd Ta=+25°C Vdd=7.2V Pin=0.4W Idq=250mA 4 Idd 10 20 40 2 ηd(%) 50 20 Idd 0 0 450 460 470 480 490 500 510 520 530 f (MHz) Pin-Po CHARACTERISTICS @f=527MHz 100 40 Po 80 30 8 60 ηd(%) ηd 20 100 Po 40 Gp 10 80 ηd 6 Ta=+25°C f=527MHz Vdd=7.2V Idq=250mA 4 20 2 0 0 60 ηd(%) Ta=+25°C f=527MHz Vdd=7.2V Idq=250mA Pin-Po CHARACTERISTICS @f=527MHz 10 Pout(W) , Idd(A) 50 Po(dBm) , Gp(dB) , Idd(A) 0 0 450 460 470 480 490 500 510 520 530 f (MHz) 40 Idd 20 Idd 15 20 Pin(dBm) 25 30 Vdd-Po CHARACTERISTICS @f=527MHz Ta=+25°C f=527MHz Pin=0.4W Idq=250mA Zg=ZI=50 ohm 20 Po(W) 10 15 Po 10 5 10 4 8 3 6 0.2 0.4 Pin(W) 2 Vgg-Po CHARACTERISTICS @f=527MHz Ta=+25°C f=527MHz Pin=0.4W Idq=250mA Zg=ZI=50 ohm 1 2 0 0 0 5 6 7 Vdd(V) 8 9 Po 4 3 2 Idd 5 4 5 4 Idd 3 0 0.8 0.6 Po(W) 25 5 Idd(A) 0 0.0 Idd(A) 0 10 1 0 0 Publication Date : Oct．2011 5 0.4 0.8 1.2 Vgg(V) 1.6 2 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W TYPICAL CHARACTERISTICS ( 763-870MHz ) (These are only typical curves and devices are not necessarily guaranteed at these curves.) 100 10 f-Po CHARACTERISTICS @f=763-870MHz 30 60 Ta=+25°C Vdd=7.2V Pin=0.5W Idq=250mA 20 ηｄ 40 Gp 10 Po 8 Pout(W) , Idd(A) 80 ηd(%) Po(dBm) , Gp(dB) , Idd(A) Po 40 Ta=+25°C Vdd=7.2V Pin=0.5W Idq=250mA 100 80 6 60 ηd(%) f-Po CHARACTERISTICS @f=763-870MHz 50 ηd 4 20 40 Idd 2 20 Idd Ta=+25°C f=870MHz Vdd=7.2V Idq=250mA 40 Po 30 100 10 80 8 Pout(W) , Idd(A) Pin-Po CHARACTERISTICS @f=870MHz 60 ηｄ 20 40 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 50 0 0 760 780 800 820 840 860 880 900 920 940 960 f (MHz) Gp 10 Pin-Po CHARACTERISTICS @f=870MHz 80 Po 6 60 ηd 4 20 2 0 0 100 Idd Ta=+25°C f=870MHz Vdd=7.2V Idq=250mA ηd(%) 0 0 760 780 800 820 840 860 880 900 920 940 960 f (MHz) 40 20 Idd 0 25 10 15 20 Pin(dBm) 25 30 Vdd-Po CHARACTERISTICS @f=870MHz Ta=+25°C f=870MHz Pin=0.5W Idq=250mA Zg=ZI=50 ohm 20 Po(W) 5 15 4 3 Idd 10 5 5 Idd(A) 0 0.0 2 1 Po 0 0 3 4 5 6 7 Vdd(V) 8 9 10 Publication Date : Oct．2011 6 0.2 0.4 Pin(W) 0.6 0 0.8 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W TYPICAL CHARACTERISTICS ( Vds=3.6V ) (These are only typical curves and devices are not necessarily guaranteed at these curves.) 80 6 4 40 Idd 2 80 Po 30 60 20 40 Gp 10 20 810 820 Ta=+25°C f=870MHz Vdd=3.6V Idq=250mA 15 20 Pin(dBm) 860 80 Po 60 ηｄ 20 40 Gp 10 0 10 850 20 Idd 0 5 830 840 f (MHz) 0 870 30 Idd 0 20 Pin-Po CHARACTERISTICS @f=870MHz 100 40 Po(dBm) , Gp(dB) , Idd(A) 40 ηｄ ηd(%) Po(dBm) , Gp(dB) , Idd(A) Ta=+25°C f=520MHz Vdd=3.6V Idq=250mA Idd 0 800 50 40 Po 2 Pin-Po CHARACTERISTICS @f=520MHz 100 60 ηd 4 20 25 0 30 0 0 5 10 15 20 Pin(dBm) 25 30 Application note : AN-900-041 The detail of this application is shown in application note. Publication Date : Oct．2011 7 100 80 6 0 0 450 460 470 480 490 500 510 520 530 f (MHz) 50 Ta=+25°C Vdd=3.6V Pin=0.5W Idq=250mA 8 60 Po f-Po CHARACTERISTICS @f=800-870MHz ηd(%) ηd ηd(%) Pout(W) , Idd(A) 8 10 Pout(W) , Idd(A) Ta=+25°C Vdd=3.6V Pin=0.3W Idq=250mA 100 ηd(%) f-Po CHARACTERISTICS @f=450-530MHz 10 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W TYPICAL CHARACTERISTICS ( 380-430MHz ) (These are only typical curves and devices are not necessarily guaranteed at these curves.) Pin-Po CHARACTERISTICS @f=380-430MHz 50 100 Ta=+25°C f=380MHz Vdd=7.2V Idq=250mA 80 Po 30 60 ηｄ 20 40 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 40 Gp 10 20 Idd 0 0 5 15 20 Pin(dBm) 25 30 Po-ACP characteristic 0 Ta=+25°C f=380MHz Vdd=7.2V Idq=250mA -10 -20 ACP (dBc) 10 80 60 40 ηd Gain -30 20 ACP_1L -40 0 ACP_1H -50 -20 -60 -40 20 25 30 35 40 Po (dBm ) The detail of this application is shown in application note(AN-UHF-105.) Publication Date : Oct．2011 8 Gain (dB), ηd (%) 0 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W TEST CIRCUIT(f=135-175MHz) Vgg Vdd 22μF,50V C2 C1 21mm W 21mm W RD07MUS2B (f=135-175MHz) 4.7K ohm 3.5mm RF-in 100pF 1.5mm L5 5.5mm 140pF 3mm L4 4.5mm 5mm L1 7.5mm 1mm 3mm L3 3mm 3.5mm 7.5mm L2 2.5mm 2.5mm 9.5mm 22pF 2.2 ohm 43pF Note:Board material Glass-Epoxy substrate Micro strip line width=1.3mm/50 ohm,er:4.8,t=0.8mm W:line width=1.0mm RF-OUT 62pF 22pF 100pF 20pF L1,L2:Enameled wire 6 Turns,D:0.23mm,1.66mm O.D L3,L5:Enameled wire 2 Turns,D:0.23mm,1.66mm O.D L4 :Enameled wire 4 Turns,D:0.43mm,1.66mm O.D C1,C2:1000pF,0.0022μF in parallel TEST CIRCUIT(f=450-527MHz) Vgg Vdd C1 W 21mm W 21mm RD07MUS2B (f=450-527MHz) 4.7K ohm 4mm RF-in 10mm 4mm 5mm 5.5mm 1mm L1 3mm 8pF 12pF 6mm 2.5mm 24pF 9pF 54pF Note:Board material Glass-Epoxy substrate Micro strip line width=1.3mm/50 ohm,er:4.8,t=0.8mm W:line width=1.0mm 0.5mm L2 7.5mm 5.5mm RF-OUT 100pF 24pF 8pF 4.5mm 1mm 100pF 12pF 22μF,50V C2 L1:Enameled wire 5 Turns,D:0.43mm,2.46mm O.D L2:Enameled wire 2 Turns,D:0.23mm,1.66mm O.D C1,C2:1000pF,0.0022μF in parallel Publication Date : Oct．2011 9 8pF < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W TEST CIRCUIT(f=763-870MHz) Vgg Vdd 22μF,50V C1 C2 21mm W W 21mm RD07MUS2B (f=763-870MHz) 4.7K ohm RF-in 19mm 9mm 2.5mm 1mm 10pF 0.5mm 1mm 1mm 8pF 6pF 1pF 12pF Note:Board material Glass-Epoxy substrate Micro strip line width=1.3mm/50 ohm,er:4.8,t=0.8mm W:line width=1.0mm 16.5mm RF-OUT 150pF 10pF 6pF L1 12mm 1.5mm 150pF 1pF 8pF 1mm L1:Enameled wire 7 Turns,D:0.23mm,1.66mm O.D C1,C2:1000pF,100pF in parallel Publication Date : Oct．2011 10 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W Input / Output Impedance VS. Frequency Characteristics f=175MHz @Pin=0.3W, Vdd=7.2V, Idq=250mA(Vgg adj.) f=155MHz f Zout* (MHz) (ohm) 135 3.50-j5.54 155 2.57-j2.57 175 2.06+j0.62 f=135MHz Zo=10ohm Zout* ( f=135, 155, 175MHz) Zout*: Complex conjugate of output impedance Zin* ( f=135, 155, 175MHz) @Pin=0.3W, Vdd=7.2V, Idq=250mA(Vgg adj.) Zo=10ohm f=175MHz f=155MHz f Zin* (MHz) (ohm) 135 5.58+j2.43 155 5.25+j5.60 175 5.01+j8.65 f=135MHz Zin*: Complex conjugate of input impedance Publication Date : Oct．2011 11 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W Input / Output Impedance VS. Frequency Characteristics Zout* ( f=450, 490, 520, 527MHz) @Pin=0.4W, Vdd=7.2V, Idq=250mA(Vgg adj.) Zo=10ohm f (MHz) 450 490 520 527 Zout* (ohm) 2.80+j1.07 2.25+j0.75 1.51+j1.04 1.36+j1.20 f=527MHz f=450MHz f=520MHz f=485MHz Zout*: Complex conjugate of output impedance @Pin=0.4W, Vdd=7.2V, Idq=250mA(Vgg adj.) Zin* ( f=450, 490, 520, 527MHz) Zo=10ohm f=520MHz f=527MHz f=490MHz f (MHz) 450 490 520 527 Zin* (ohm) 2.62+j2.02 2.90+j3.07 3.29+j3.70 3.40+j3.81 f=450MHz Zin*: Complex conjugate of input impedance Publication Date : Oct．2011 12 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W Input / Output Impedance VS. Frequency Characteristics Zout* ( f=763, 806, 817, 870MHz) @Pin=0.5W, Vdd=7.2V, Idq=250mA(Vgg adj.) Zo=10ohm f (MHz) 763 806 817 870 f=817MHz f=763MHz Zout* (ohm) 2.01+j0.43 2.16+j0.80 2.17+j0.85 2.17+j1.07 f=870MHz f=806MHz Zout*: Complex conjugate of output impedance f=870MHz @Pin=0.5W, Vdd=7.2V, Idq=250mA(Vgg adj.) f=817MHz f=806MHz f=763MHz f (MHz) 763 806 817 870 Zin* (ohm) 1.72-j1.54 1.55-j0.50 1.46-j0.23 1.28+j0.95 Zo=10ohm Zin* ( f=763, 806, 817, 870MHz) Zin*: Complex conjugate of input impedance Publication Date : Oct．2011 13 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W RD07MUS2B S-PARAMETER DATA (@Vdd=7.2V, Id=250mA) Freq. [MHz] 100 135 150 175 200 250 300 350 400 450 500 520 527 550 600 650 700 750 763 800 806 817 850 870 900 950 1000 1050 1100 S11 (mag) 0.850 0.857 0.858 0.863 0.871 0.881 0.889 0.903 0.910 0.918 0.927 0.928 0.929 0.931 0.934 0.940 0.943 0.946 0.948 0.950 0.951 0.950 0.950 0.955 0.952 0.956 0.957 0.960 0.961 (ang) -170.8 -173.2 -173.7 -174.6 -175.4 -176.8 -178.1 -179.0 -180.0 178.8 177.7 177.2 177.2 176.7 175.6 174.4 173.5 172.6 172.3 171.5 171.7 171.3 170.8 170.6 170.0 169.2 168.4 167.7 167.1 S21 (mag) (ang) 10.060 79.2 7.300 73.1 6.509 70.7 5.435 66.9 4.687 63.5 3.556 56.7 2.791 51.2 2.261 45.7 1.861 40.9 1.559 36.7 1.320 33.0 1.236 31.5 1.212 31.2 1.130 29.5 0.974 26.5 0.848 23.4 0.745 20.9 0.660 18.6 0.638 18.0 0.587 16.5 0.578 16.3 0.563 15.8 0.522 14.5 0.502 13.8 0.471 12.9 0.427 11.1 0.387 9.7 0.353 8.1 0.323 6.9 Publication Date : Oct．2011 14 S12 (mag) 0.016 0.016 0.015 0.015 0.014 0.013 0.013 0.011 0.010 0.009 0.008 0.008 0.008 0.008 0.007 0.006 0.005 0.005 0.004 0.004 0.004 0.004 0.003 0.003 0.003 0.002 0.002 0.002 0.002 S22 (ang) -9.1 -14.2 -15.2 -18.8 -23.8 -27.4 -32.8 -36.7 -39.7 -41.9 -44.9 -45.1 -44.2 -46.4 -46.4 -48.0 -46.0 -45.9 -44.9 -42.0 -45.4 -43.6 -41.8 -39.4 -33.7 -26.6 -17.3 -7.4 8.9 (mag) 0.745 0.759 0.763 0.773 0.781 0.806 0.825 0.843 0.859 0.874 0.888 0.893 0.894 0.896 0.909 0.915 0.921 0.928 0.931 0.931 0.931 0.933 0.934 0.935 0.941 0.943 0.943 0.949 0.949 (ang) -168.8 -169.5 -170.0 -170.7 -170.6 -171.0 -171.7 -172.4 -173.2 -173.9 -174.5 -174.8 -174.9 -175.4 -176.0 -176.5 -177.4 -177.8 -178.0 -178.3 -178.3 -178.6 -178.8 -178.9 -179.2 -179.5 179.9 179.7 179.6 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W RD07MUS2B S-PARAMETER DATA (@Vdd=3.6V, Id=250mA) Freq. [MHz] 100 135 150 175 200 250 300 350 400 450 500 520 527 550 600 650 700 750 763 800 806 817 850 870 900 950 1000 1050 1100 S11 (mag) 0.850 0.855 0.856 0.862 0.869 0.881 0.887 0.901 0.909 0.917 0.927 0.929 0.926 0.929 0.933 0.937 0.944 0.945 0.947 0.949 0.949 0.951 0.949 0.953 0.952 0.957 0.959 0.960 0.960 S21 (ang) -172.3 -174.2 -174.7 -175.3 -176.2 -177.4 -178.5 -179.5 179.6 178.6 177.5 177.0 176.9 176.4 175.3 174.2 173.4 172.5 172.2 171.6 171.5 171.4 170.8 170.5 169.9 169.2 168.2 167.7 167.0 (mag) 8.581 6.239 5.564 4.661 4.030 3.057 2.400 1.945 1.606 1.345 1.139 1.068 1.048 0.975 0.841 0.732 0.644 0.571 0.552 0.508 0.502 0.488 0.454 0.436 0.408 0.370 0.335 0.306 0.280 S12 (ang) 78.7 73.0 70.6 66.8 63.5 56.8 51.3 46.0 41.2 37.2 33.2 31.9 31.6 29.9 26.9 23.8 21.4 19.2 18.4 17.0 16.8 16.2 15.0 14.3 13.3 11.8 10.3 8.6 7.4 Publication Date : Oct．2011 15 (mag) 0.016 0.016 0.016 0.015 0.015 0.014 0.013 0.012 0.010 0.009 0.008 0.008 0.008 0.008 0.007 0.006 0.005 0.005 0.005 0.004 0.004 0.004 0.003 0.003 0.003 0.003 0.002 0.002 0.002 S22 (ang) -9.3 -13.3 -17.3 -20.0 -23.1 -28.7 -32.8 -36.0 -40.7 -42.4 -45.0 -45.4 -44.5 -45.1 -47.2 -47.4 -46.7 -44.2 -44.2 -43.7 -42.8 -42.3 -40.8 -37.7 -32.1 -25.2 -18.0 -6.7 6.9 (mag) 0.782 0.793 0.797 0.806 0.812 0.831 0.849 0.863 0.877 0.890 0.902 0.904 0.907 0.909 0.918 0.925 0.931 0.935 0.939 0.938 0.938 0.940 0.941 0.940 0.946 0.949 0.949 0.955 0.954 (ang) -171.0 -171.6 -172.0 -172.5 -172.7 -173.0 -173.6 -174.3 -175.0 -175.5 -176.2 -176.3 -176.4 -176.9 -177.4 -178.0 -178.6 -179.0 -179.1 -179.3 -179.5 -179.6 -179.8 -180.0 179.8 179.5 179.0 178.8 178.7 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W APPLICATION-NOTE Typical Characteristics Table (Application For Example) (These are only typical value and devices are not necessarily guaranteed at these values.) RD07MUS2B Single-stage amplifier for analog radio solution Application Note Frequency Band Vds Pin Po Gp ηｄ AN-VHF-047 135 to 175MHz 7.2V 0.3W 7W 13.7ｄB 65% AN-VHF-046 170 to 205MHz 7.2V 0.3W 7W 13.7ｄB 70% AN-UHF-096 450 to 527MHz 7.2V 0.4W 7W 12.4dB 66% AN-UHF-098 400 to 470MHz 7.2V 0.4W 7W 12.5ｄB 60% AN-900-039 763 to 870MHz 7.2V 0.5W 6.5W 11.1dB 53% Single-stage amplifier for digital radio solution Application Note Frequency Band Vds Pin Po Gp ηｄ ACP AN-UHF-105 380 to 430MHz 7.2V 0.03W 3W 19.7dB 35% -39ｄBc AN-UHF-106 350 to 400MHz 7.2V 0.03W 3W 19.5dB 32% -40dBc AN-900-041 800 to 870MHz 3.6V 0.04W 1W 12.2ｄB 32% -34dBc RD01MUS2 RD07MUS2B or RD01MUS1 2stage（RD07MUS2B with dirver PA) amplifier for analog radio solution Application Note Frequency Band Vds Pin Po Gp ηｄ AN-VHF-053 135 to 175MHz 7.2V 0.03W 7.1W 23.7dB 47% AN-UHF-097 400 to 470MHz 7.2V 0.03W 7W 23.6ｄB 55% AN-UHF-115 450 to 530MHz 7.2V 0.03W 7.4W 23.9dB 45% AN-900-040 763 to 870MHz 7.2V 0.03W 7.2W 23.8ｄB 53% 2stage（RD07MUS2B with dirver PA) amplifier for digital radio solution Application Note Frequency Band Vds Pin Po Gp ηｄ ACP AN-UHF-116 380 to 430MHz 7.2V 0.001W 3W 34.9dB 32% -39dBc Publication Date : Oct．2011 16 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements and In the application, which is base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed. For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : Oct．2011 17 < Silicon RF Power MOS FET (Discrete) > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. •Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : Oct．2011 18