MITSUBISHI RD20HMF1_11

< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
DESCRIPTION
OUTLINE
RD20HMF1 is a MOS FET type transistor specifically
DRAWING
22.0+/-0.3
designed for 900MHz-band RF power amplifiers
18.0+/-0.3
applications.
7.2+/-0.5
7.6+/-0.3
4-C1
High power gain:
2
Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz
14.0+/-0.4
6.6+/-0.3
1
FEATURES
R1.6
High Efficiency: 55%typ.
3
3.0+/-0.4
For output stage of high power amplifiers in 900MHz band
Mobile radio sets.
PIN
1.Drain
2.Source
3.Gate
5.1+/-0.5
0.10
APPLICATION
2.3+/-0.3
2.8+/-0.3
UNIT:mm
RoHS COMPLIANT
RD20HMF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after
the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
Drain to source voltage
Vgs=0V
30
V
VGSS
Gate to source voltage
Vds=0V
+/-20
V
Pch
Channel dissipation
Tc=25°C
71.4
W
Pin
Input power
Zg=Zl=50
6
W
ID
Drain current
-
6
A
Tch
Channel temperature
-
175
°C
Tstg
Storage temperature
-
-40 to +175
°C
Rth j-c
Thermal resistance
2.1
°C/W
junction to case
Note 1: Above parameters are guaranteed independently.
Publication Date : Oct.2011
1
< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
(Tc=25°C, UNLESS OTHERWISE NOTED)
CONDITIONS
LIMITS
UNIT
MIN
TYP
MAX.
IDSS
Zero gate voltage drain current
VDS=17V, VGS=0V
-
-
5
uA
IGSS
Gate to source leak current
VGS=10V, VDS=0V
-
-
1
uA
VTH
Gate threshold voltage
VDS=12V, IDS=1mA
1.0
-
3.0
V
Pout
Output power
f=900MHz ,VDD=12.5V
20
25
-
W
Drain efficiency
Pin=3.0W, Idq=1.0A
50
55
-
%
Load VSWR tolerance
VDD=15.2V,Po=20W(PinControl)
D
Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
Publication Date : Oct.2011
2
No destroy
-
< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
100
Vgs-Ids CHARACTERISTICS
10
80
8
60
6
Ids(A)
CHANNEL DISSIPATION Pch(W)
Ta=+25°C
Vds=10V
40
4
2
20
0
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(°C)
0
Vds-Ids CHARACTERISTICS
1
4
5
Vds VS. Ciss CHARACTERISTICS
10
100
Vgs=5V
Ta=+25°C
f=1MHz
Ta=+25°C
8
80
Ciss(pF)
Vgs=4.5V
6
Ids(A)
2
3
Vgs(V)
Vgs=4V
4
Vgs=3.5V
2
Vgs=3V
60
40
20
Vgs=2.5V
0
0
Vgs=2V
0
2
4
6
Vds(V)
8
0
10
Vds VS. Coss CHARACTERISTICS
10
Vds(V)
15
20
Vds VS. Crss CHARACTERISTICS
140
14
Ta=+25°C
f=1MHz
120
Ta=+25°C
f=1MHz
12
10
Crss(pF)
100
Coss(pF)
5
80
60
8
6
40
4
20
2
0
0
0
5
10
Vds(V)
15
0
20
Publication Date : Oct.2011
3
5
10
Vds(V)
15
20
< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
Pin-Po CHARACTERISTICS
100
60
40
ηd
10
Gp
20
30
Pin(dBm)
35
35
5
Po
4
15
3
Idd(A)
Po(W)
6
20
Idd
10
2
5
1
0
0
4
6
Ta=25°C
f=900MHz
Vdd=12.5V
Idq=1.0A
10
40
20
8
10
Vdd(V)
12
Idd
0
7
Ta=25°C
f=900MHz
Pin=3.0W
Idq=1.0A
Zg=ZI=50 ohm
25
60
ηd
0
40
Vdd-Po CHARACTERISTICS
30
15
5
0
25
80
Idd
0
20
20
14
Publication Date : Oct.2011
4
1
2
3
Pin(W)
0
4
5
6
ηd(%)
20
100
Po
Ta=+25°C
f=900MHz
Vdd=12.5V
Idq=1.0A
30
120
25
80
Po
Pout(W) , Idd(A)
40
30
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
50
< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
TEST CIRCUIT(f=900MHz)
Vdd
Vgg
C1
4.7OHM
C3
22μF,50V
C2
6pF
8pF
900MHz
L1
L2
RD20HMF1
RF-in
RF-OUT
82pF
82pF
5pF
5pF
6pF
9pF
8
6pF
2pF
15
11
17
8
17
4.8
38
53
10.8
90
90
100
C1:1000pF,22000pF in parallel
C2:100pF*2 in parallel
C3:1000pF,22000pF in parallel
100
Note:Board material PTFE substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
L1:1Turn,I.D3mm,D1.5mm silver plateted copper wire
L2:1Turn,I.D3mm,D1.5mm silver plateted copper wire
Publication Date : Oct.2011
5
< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=900MHz Zout
f=900MHz Zin
Zo=10
Zin , Zout
f
Zin
Zout
(MHz)
(ohm)
(ohm)
Conditions
900
1.78+j2.50
2.52+j1.76
Po=20W, Vdd=12.5V,Pin=3W
Publication Date : Oct.2011
6
< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
RD20HMF1 S-PARAMETER DATA (@Vdd=12.5V,Id=800mA)
Freq
[MHz]
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
S11
(mag)
0.862
0.868
0.872
0.882
0.897
0.912
0.917
0.926
0.934
0.947
0.953
0.959
0.962
0.966
0.965
0.963
0.958
0.956
0.955
0.953
0.954
0.954
0.956
0.951
0.954
0.946
0.949
0.942
0.946
0.938
S21
(ang)
-168.4
-173.3
-174.8
-174.8
-176.1
-176.8
-177.8
-178.6
-179.3
179.5
178.6
177.2
176.4
174.8
173.6
172.0
170.4
168.8
166.9
165.2
163.2
160.9
159.0
156.6
154.8
152.6
150.4
148.1
146.1
144.1
(mag)
8.814
4.213
2.614
1.820
1.343
1.028
0.812
0.663
0.560
0.482
0.421
0.358
0.320
0.292
0.269
0.244
0.222
0.202
0.186
0.177
0.168
0.160
0.151
0.139
0.129
0.124
0.114
0.105
0.099
0.094
S12
(ang)
83.5
70.7
60.4
52.2
44.6
38.7
33.5
29.4
25.9
23.0
19.7
16.8
14.3
12.3
10.2
8.1
6.2
3.8
1.9
0.3
-2.0
-3.6
-6.2
-8.1
-10.0
-12.1
-13.3
-13.0
-12.1
-10.3
Publication Date : Oct.2011
7
(mag)
0.016
0.014
0.012
0.011
0.009
0.007
0.006
0.005
0.006
0.007
0.008
0.009
0.011
0.013
0.015
0.016
0.018
0.020
0.022
0.024
0.026
0.028
0.030
0.032
0.034
0.037
0.039
0.040
0.041
0.044
S22
(ang)
-4.3
-10.9
-11.0
-16.2
-12.5
-5.3
7.6
25.8
43.8
54.0
62.2
68.5
70.8
75.6
74.7
75.4
76.9
74.8
74.8
73.3
74.1
71.7
70.0
67.4
65.4
63.6
60.1
56.5
54.0
51.0
(mag)
0.798
0.813
0.834
0.856
0.876
0.887
0.907
0.920
0.930
0.941
0.947
0.950
0.949
0.951
0.954
0.944
0.946
0.949
0.945
0.947
0.945
0.945
0.943
0.935
0.935
0.936
0.934
0.933
0.932
0.931
(ang)
-172.5
-173.9
-174.6
-174.8
-175.6
-175.6
-176.6
-177.9
-178.6
-179.0
-179.9
179.3
178.5
177.8
176.7
175.4
174.7
173.2
171.8
170.1
168.6
166.9
164.7
162.6
160.4
158.0
155.2
152.4
149.9
147.2
< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that have
a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use this products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal
specification sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements and In the application, which is base station applications and
fixed station applications that operate with long term continuous transmission and a higher on-off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
period and others as needed. For the reliability report which is described about predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct.2011
8
< Silicon RF Power MOS FET (Discrete) >
RD20HMF1
RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
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examples contained in these materials.
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Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
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The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
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Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct.2011
9