< HIGH VOLTAGE DIODE MODULES > RM1500HE-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules RM1500HE-66F IF ··········································································· 1500A VRRM ··································································· 3300V 1-element in a Pack Insulated Type Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM June 2013 HVM-2028-A.doc Dimensions in mm 1 < HIGH VOLTAGE DIODE MODULES > RM1500HE-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules MAXIMUM RATINGS Symbol Item Conditions VRRM Repetitive peak reverse voltage VRSM Non-repetitive peak reverse voltage IF IFRM IFSM 2 It Viso Ve Tj Tjop Tstg Forward current Surge (non-repetitive) forward current Surge current load integral Isolation voltage Partial discharge extinction voltage Junction temperature Operating junction temperature Storage temperature Ratings 3300 3200 3300 3200 1500 3000 12000 598 6000 2400 −50 ~ +150 −50 ~ +150 −55 ~ +150 Tj = −40 … +150°C Tj = −50°C Tj = −40 … +150°C Tj = −50°C DC, Tc = 75°C (Note 1) Pulse Tj_start = 25°C, tp = 8.3 ms, Half-sine wave, VR = 0 V RMS, sinusoidal, f = 60 Hz, t = 1 min. RMS, sinusoidal, f = 60 Hz, QPD ≤ 10 pC Unit V V A A A 2 kA s V V °C °C °C ELECTRICAL CHARACTERISTICS Symbol −diF/dt = 4400 A/µs @ Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Min — — — — — — — — — Limits Typ — 12.0 2.60 2.70 — 0.9 — 1300 — Max 5.0 — 3.20 — — — — — — Inductive load Tj = 150°C — 1.35 — Min — Limits Typ — Max 14.5 K/kW — 15.0 — K/kW Min 6.7 2.9 — 600 19.5 32.0 — — Limits Typ — — 0.66 — — — 17.0 0.16 Max 10.8 3.4 — — — — — — Item Conditions IRRM Repetitive reverse current VRM = VRRM VFM Forward voltage IF = 1500 A trr Reverse recovery time Qrr Reverse recovery charge Erec Reverse recovery energy (Note 2) VCC = 1500 V IF = 1500 A Ls = 100 nH (Note 3) Unit mA V µs µC J THERMAL CHARACTERISTICS Symbol Item Rth(j-c) Thermal resistance Rth(c-s) Contact thermal resistance Conditions Junction to Case Case to heat sink, grease = 1 W/m·k D(c-s) = 100 µm Unit MECHANICAL CHARACTERISTICS Symbol Mt Ms m CTI da ds LP AK RAA’+KK’ Note 1. Note 2. Note 3. Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance Conditions M8 : Main terminals screw M6 : Mounting screw Tc = 25°C Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. Erec is the integral of 0.1VR x 0.1IF x dt. June 2013 HVM-2028-A.doc 2 Unit N·m N·m kg — mm mm nH mΩ < HIGH VOLTAGE DIODE MODULES > RM1500HE-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules PERFORMANCE CURVES FORWARD CHARACTERISTICS (TYPICAL) REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 3000 2.0 V = 1500V, LS = 100nH Tj = 150 °C , Inductive load CC 2000 Tj = 25°C 1500 1000 500 0 1.6 1.2 0.8 0.4 0.0 0 1 2 3 4 0 500 Forward Voltage [V] Forward Current [A] REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 2.5 100 10000 VCC = 1500V, LS = 100nH Tj = 150°C, Inductive load V = 1500V, LS = 100nH Tj = 150°C, Inductive load Reverse Recovery Time [µs] CC Reverse Recovery Energies [J] 1000 1500 2000 2500 3000 2.0 Irr 10 1.5 1.0 1000 trr 1 100 0.5 0.1 10 0.0 0 2000 4000 6000 HVM-2028-A.doc 1000 Forward Current [A] 8000 Current Slope [A/µs] June 2013 100 3 10 10000 Reverse Recovery Current [A] Forward Current [A] 2500 Reverse Recovery Energies [J] Tj = 150°C < HIGH VOLTAGE DIODE MODULES > RM1500HE-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules PERFORMANCE CURVES REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 3000 V 2500V, di/dt < 6.8kA/µs Tj = 150°C, Ls = 100nH Reverse Recovery Current [A] CC 2500 2000 1500 1000 500 0 0 500 1000 1500 2000 2500 3000 Reverse Voltage [V] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 Rth(j-c ) = 14.5K/kW 1 Z 0.8 th( j c ) (t ) i n R 1 exp i 1 t i 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 Time [s] June 2013 HVM-2028-A.doc 4 1 2 3 4 Ri [K/kW] 0.0096 0.1893 0.4044 0.3967 i [sec] 0.0001 0.0058 0.0602 0.3512 < HIGH VOLTAGE DIODE MODULES > RM1500HE-66F HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Modules Keep safety first in your circuit designs! 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