TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 21061 DESCRIPTION TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 38° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 24 MHz Good spectral matching with Si photodetectors Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Infrared video data transmission between camcorder and TV set • Free air data transmission systems with high data transmission rates PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 32 ± 38 870 15 TSFF5510 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSFF5510 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81835 Rev. 1.1, 16-Sep-08 tp/T = 0.5, tp = 100 µs tp = 100 µs t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm soldered on PCB SYMBOL VALUE UNIT VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 230 V mA mA A mW °C °C °C °C K/W For technical questions, contact: [email protected] www.vishay.com 139 TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero 120 200 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT V IF = 100 mA, tp = 20 ms VF 1.3 1.45 1.7 IF = 450 mA, tp = 100 µs VF 1.5 1.75 2.1 IF = 1 A, tp = 100 µs VF 2.1 Temperature coefficient of VF IF = 1 mA TKVF - 1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj Radiant intensity IF = 100 mA, tp = 20 ms Ie Radiant power IF = 100 mA, tp = 20 ms φe 55 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 38 deg nm Forward voltage Junction capacitance Temperature coefficient of φe Angle of half intensity mV/K 10 µA 48 mW/sr 110 16 32 V V pF Peak wavelength IF = 100 mA λp 870 Spectral bandwidth IF = 100 mA Δλ 55 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 24 MHz Cut-off frequency Note Tamb = 25 °C, unless otherwise specified www.vishay.com 140 For technical questions, contact: [email protected] Document Number: 81835 Rev. 1.1, 16-Sep-08 TSFF5510 High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 Tamb < 50 °C tP/T = 0.01 1000 φe - Radiant Power (mW) IF - Forward Current (mA) 0.02 0.05 0.1 0.2 0.5 100 0.01 100 10 0.1 0.1 1.0 10 1 100 1000 1.25 Φe, rel - Relative Radiant Power 10 IF - Forward Current (A) 100 IF - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current Fig. 3 - Pulse Forward Current vs. Pulse Duration 1 0.1 0.01 1.00 0.75 0.50 0.25 0 750 0.001 0 0.5 1 1.5 2 2.5 3 3.5 4 VF - Forward Voltage (V) 21009 790 830 870 910 950 λ - Wavelength (nm) 21011 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Power vs. Wavelength 1.1 Ie, rel - Relative Radiant Intensity 1000 Ie - Radiant Intensity (mW/sr) 10 21062 tP - Pulse Duration (ms) 16031 100 10 1 tP = 100 µs tP/T = 0.002 1 10 100 1000 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81835 Rev. 1.1, 16-Sep-08 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 90 - 70 - 50 - 30 - 10 0 10 0.1 21010 tP = 100 µs tP/T = 0.002 1 21012 30 50 70 90 Angle (°) Fig. 8 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: [email protected] www.vishay.com 141 TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters 20796 www.vishay.com 142 For technical questions, contact: [email protected] Document Number: 81835 Rev. 1.1, 16-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1