PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 7.0 Amperes • • • • hFE = 30−150 @ IC = 3.0 Adc − 2N6111, 2N6288 = 2.3 (Min) @ IC = 7.0 Adc − All Devices Collector−Emitter Sustaining Voltage − VCEO(sus) = 30 Vdc (Min) − 2N6111, 2N6288 = 50 Vdc (Min) − 2N6109 = 70 Vdc (Min) − 2N6107, 2N6292 High Current Gain − Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc − 2N6288, 90, 92 = 10 MHz (Min) @ IC = 500 mAdc − 2N6107, 09, 11 TO−220AB Compact Package Pb−Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Symbol 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 Emitter−Base Voltage VCEO VCB Value Unit 7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 30 − 50 − 70 VOLTS, 40 WATTS MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 1 1 2 PIN 1. 2. 3. 4. 3 Vdc 30 50 70 Vdc 40 60 80 VEB 5.0 Vdc Collector Current − Continuous − Peak IC 7.0 10 Adc Base Current IB 3.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 0.32 W W/°C TJ, Tstg −65 to +150 °C Operating and Storage Junction Temperature Range http://onsemi.com 2N6xxx xxx G A Y WW 2N6xxxG AYWW BASE COLLECTOR EMITTER COLLECTOR = Specific Device Code = See Table on Page 4 = Pb−Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 4 of this data sheet. THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 3.125 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 9 1 Publication Order Number: 2N6107/D PNP − 2N6107, 2N6109, 2N6111; NPN − 2N6288, 2N6292 PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 160 140 Figure 1. Power Derating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2) Characteristic Symbol Min Max 30 50 70 − − − − − − 1.0 1.0 1.0 − − − − − − 100 100 100 2.0 2.0 2.0 − 1.0 30 30 30 2.3 150 150 150 − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 100 mAdc, IB = 0) 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) 2N6111, 2N6288 2N6109 2N6107, 2N6292 Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) 2N6111, 2N6288 2N6109 2N6107, 2N6292 2N6111, 2N6288 2N6109 2N6107, 2N6292 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) VCEO(sus) ICEO ICEX IEBO Vdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 2.0 Adc, VCE = 4.0 Vdc) (IC = 2.5 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 7.0 Adc, VCE = 4.0 Vdc) 2N6107, 2N6292 2N6109 2N6111, 2N6288 All Devices hFE − Collector−Emitter Saturation Voltage (IC = 7.0 Adc, IB = 3.0 Adc) VCE(sat) − 3.5 Vdc Base−Emitter On Voltage (IC = 7.0 Adc, VCE = 4.0 Vdc) VBE(on) − 3.0 Vdc 4.0 10 − − DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (Note 4) (IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz) 2N6288, 92 2N6107, 09, 11 fT MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 250 pF Small−Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz) hfe 20 − − 2. 3. 4. Indicates JEDEC Registered Data. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. fT = |hfe| • ftest http://onsemi.com 2 PNP − 2N6107, 2N6109, 2N6111; NPN − 2N6288, 2N6292 VCC +30 V 25 ms RC +11 V SCOPE RB 0 D1 51 -9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% -4 V RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA Figure 2. Switching Time Test Circuit 2.0 1.0 TJ = 25°C VCC = 30 V IC/IB = 10 t, TIME (s) μ 0.7 0.5 0.3 0.2 tr 0.1 0.07 0.05 td @ VBE(off) ≈ 5.0 V 0.03 0.02 0.07 0.1 1.0 0.2 0.3 0.5 2.0 IC, COLLECTOR CURRENT (AMP) 3.0 5.0 7.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Turn−On Time 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 D = 0.5 0.2 0.1 ZqJC(t) = r(t) RqJC RqJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 Figure 4. Thermal Response http://onsemi.com 3 20 50 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1.0 k IC, COLLECTOR CURRENT (AMPS) PNP − 2N6107, 2N6109, 2N6111; NPN − 2N6288, 2N6292 15 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.1 ms 0.5 ms 7.0 5.0 dc 3.0 2.0 0.1 ms CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25°C (SINGLE PULSE) 1.0 0.7 0.5 0.3 0.2 0.15 1.0 5.0 ms 2.0 3.0 20 30 50 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active−Region Safe Operating Area 300 5.0 t, TIME (s) μ 2.0 ts 1.0 0.7 0.5 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 200 C, CAPACITANCE (pF) 3.0 tr 0.3 0.2 TJ = 25°C Cib 100 70 Cob 50 0.1 0.07 0.05 0.07 0.1 0.2 0.3 0.5 2.0 3.0 1.0 IC, COLLECTOR CURRENT (AMP) 30 0.5 5.0 7.0 1.0 Figure 6. Turn−Off Time 10 20 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance ORDERING INFORMATION Device Device Marking Package 2N6107 2N6107G TO−220AB 2N6107 TO−220AB (Pb−Free) 2N6109 2N6109G TO−220AB (Pb−Free) 2N6111 TO−220AB (Pb−Free) 50 Units / Rail TO−220AB 2N6288 TO−220AB (Pb−Free) 2N6292 2N6292G 50 Units / Rail TO−220AB 2N6288 2N6288G 50 Units / Rail TO−220AB 2N6109 2N6111 2N6111G Shipping 50 Units / Rail TO−220AB 2N6292 TO−220AB (Pb−Free) http://onsemi.com 4 50 Units / Rail 30 50 PNP − 2N6107, 2N6109, 2N6111; NPN − 2N6288, 2N6292 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AG −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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