Ordering number : EN6307C 2SA2013/2SC5566 Bipolar Transistor http://onsemi.com (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • • • • • Large current capacity Adoption of FBET and MBIT processes • High-speed switching Low collector-to-emitter saturation voltage Ultrasmall package facilitales miniaturization in end products High allowable power dissipation ( )2SA2013 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCES Collector-to-Emitter Voltage Collector-to-Emitter Voltage VCEO VEBO Emitter-to-Base Voltage Unit (-50)100 V (-50)100 V (--)50 V (--)6 V Continued on next page. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 2SA2013-TD-E 2SC5566-TD-E 4.5 1.6 1 2 Packing Type: TD 4.0 1.0 2.5 1.5 TD Marking 3 0.4 3.0 2SA2013 0.75 2SC5566 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View LOT No. AT 1.5 FC 0.5 LOT No. 0.4 PCP Semiconductor Components Industries, LLC, 2013 September, 2013 1 2 1 3 2SA2013 3 2SC5566 72512 TKIM/62405EA MSIM TB-00001405/52501 TS KT TA-3260 No.6307-1/8 2SA2013 / 2SC5566 Continued from preceding page. Parameter Symbol Collector Current Collector Current (Pulse) IC ICP Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Unit (--)4 (--)7 A A (--)600 mA When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product VCE=(--)2V, IC=(--)500mA VCE(sat)2 Base-to-Emitter Saturation Voltage VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time typ 200 VCE=(--)10V, IC=(--)500mA VCE(sat)1 Collector-to-Emitter Saturation Voltage Ratings min VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A fT Cob Output Capacitance Conditions max (--)1 μA (--)1 μA 560 (360)400 VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA MHz (24)15 IC=(--)2A, IB=(--)100mA IC=(--)2A, IB=(--)100mA Unit pF (--105)85 (--180)130 mV (--200)150 (--340)225 mV (--)0.89 (--)1.2 V IC=(--)10μA, IE=0A (--50)100 V V(BR)CES V(BR)CEO IC=(--)100μA, RBE=0Ω (--50)100 V IC=(--)1mA, RBE=∞ (--)50 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V (30)35 ns (230)300 ns (15)20 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR10 RB RL 25Ω 50Ω + 100μF VBE= --5V + 470μF VCC=25V IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. Ordering Information Package Shipping 2SA2013-TD-E Device PCP 1,000pcs./reel 2SC5566-TD-E PCP 1,000pcs./reel memo Pb Free No.6307-2/8 2SA2013 / 2SC5566 IC -- VCE 0mA --80mA --70mA --60mA --50mA --20mA --2 --10mA --1 IB=0mA 0 0 --0.4 --0.8 --1.2 --1.6 Collector-to-Emitter Voltage, VCE -- V --1.5 --1.0 --0.5 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 100 7 5 2.5 2.0 1.5 1.0 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 3 2 --100 7 5 5°C 7 Ta= 3 2 5°C 2 --25°C --10 7 5 3 2 --1.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT00158 1.0 1.2 1.4 IT00155 Ta=75°C --25°C 25°C 100 7 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A VCE(sat) -- IC 2SA2013 IC / IB=20 0.8 2SC5566 VCE=2V 2 10 0.01 5 7 --10 IT00156 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 7 5 0.6 3 2 5 7 --0.1 0.4 hFE -- IC 5 3 3 0.2 7 2 2 0 Base-to-Emitter Voltage, VBE -- V 3 10 --0.01 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3.0 0 --1.4 Ta=75°C 25°C --25°C 2.0 IT00153 2SC5566 VCE=2V IT00154 DC Current Gain, hFE DC Current Gain, hFE 5 1.6 IC -- VBE 1000 7 1.2 3.5 2SA2013 VCE= --2V 2 0.8 4.0 hFE -- IC 3 0.4 0.5 Base-to-Emitter Voltage, VBE -- V 1000 IB=0mA 2SC5566 Collector-to-Emitter Voltage, VCE -- V 0 0 20mA 0 Collector Current, IC -- A --2.0 Ta=7 5°C 25°C --25° C Collector Current, IC -- A --2.5 30mA 10mA IT00152 --3.0 40mA 1 0 2SA2013 VCE= --2V --3.5 2 --2.0 IC -- VBE --4.0 3 6 Ta=7 5°C 25°C --25°C Collector Current, IC -- A A --40m A --30m 50mA 0mA 100mA --10 --90mA --3 IC -- VCE 4 70 80 90mA mA mA 2SA2013 Collector Current, IC -- A --4 5 7 10 IT00157 VCE(sat) -- IC 1000 7 5 2SC5566 IC / IB=20 3 2 100 7 5 5°C 7 Ta= 3 2 --25°C 10 7 5 C 25° 3 2 1.0 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT00160 No.6307-3/8 2SA2013 / 2SC5566 VCE(sat) -- IC 3 2 --2 5 --1000 Ta = 7 5 3 2 --100 °C 5 Ta=7 7 5 --25°C 3 2 --10 --0.01 2 3 5 7 --0.1 25° C 2 3 5 7 --1.0 2 3 5 3 2 Ta= --25°C 7 25°C 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 100 7 5 5°C Ta=7 C --25° 3 2 3 5 7 0.1 2 C 5° --2 °C 25 3 5 7 1.0 2 3 5 7 10 IT00161 VBE(sat) -- IC 2SC5566 IC / IB=50 7 5 3 2 1.0 Ta= --25°C 7 75°C 5 25°C 3 0.1 0.01 5 7 --10 IT00162 Collector Current, IC -- A 2 3 5 7 0.1 2SA2013 f=1MHz 100 7 5 3 2 10 7 5 5 7 1.0 2 3 5 7 10 IT00163 2SC5566 f=1MHz 3 Output Capacitance, Cob -- pF 2 3 Cob -- VCB 5 3 2 Collector Current, IC -- A Cob -- VCB 5 Output Capacitance, Cob -- pF 3 2 2 --0.1 --0.01 2 100 7 5 3 2 10 7 5 3 2 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 --100 5 7 0.1 3 2 100 7 5 3 2 10 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT00165 f T -- IC 2SC5566 VCE=10V 7 Gain-Bandwidth Product, f T -- MHz 5 3 1000 2SA2013 VCE= --10V 7 2 Collector-to-Base Voltage, VCB -- V IT00164 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz °C 25°C 75 = Ta Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 75°C 1000 7 5 10 2SA2013 IC / IB=50 5 3 2 10 0.01 5 7 --10 IT00159 VBE(sat) -- IC --1.0 2SC5566 IC / IB=50 7 5 2 Collector Current, IC -- A --10 VCE(sat) -- IC 10000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2SA2013 IC / IB=50 25°C °C 75 °C Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --10000 7 5 5 3 2 100 7 5 3 2 10 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT00166 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT00167 No.6307-4/8 2SA2013 / 2SC5566 2.0 ICP=7A 0.1 7 5 Collector Dissipation, PC -- W 3 2 0μ s s DC 1.0 7 5 50 0μ 10 1ms ms IC=4A 3 2 op era tio n 2SA2013 / 2SC5566 Tc=25°C Single pulse For PNP, the minus sign is omitted. 3 2 0.01 0.1 2 3 2SA2013 / 2SC5566 100ms 10 10 7 5 Collector Current, IC -- A PC -- Ta ASO 2 5 7 1.0 2 3 1.5 1.3 M ou nte do na 1.0 ce ram ic bo ard (25 0m 0.5 m2 ✕0 .8m m) 0 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT00168 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00169 PC -- Tc 4.0 2SA2013 / 2SC5566 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT01533 No.6307-5/8 2SA2013 / 2SC5566 Bag Packing Specification 2SA2013-TD-E, 2SC5566-TD-E No.6307-6/8 2SA2013 / 2SC5566 Outline Drawing 2SA2013-TD-E, 2SC5566-TD-E Land Pattern Example Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.6307-7/8 2SA2013 / 2SC5566 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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