MBRD620CTG Series, NRVBD640CTG Series SWITCHMODE Power Rectifiers DPAK−3 Surface Mount Package http://onsemi.com These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • • Extremely Fast Switching Extremely Low Forward Drop Platinum Barrier with Avalanche Guardrings NRVBD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* Mechanical Characteristics: • DPAK CASE 369C 1 • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, 20 − 60 VOLTS Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B 4 3 MARKING DIAGRAM YWW B 6x0TG Y WW B6x0T x G = Year = Work Week = Device Code = 2, 3, 4, 5, or 6 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 November, 2012 − Rev. 10 1 Publication Order Number: MBRD620CT/D MBRD620CTG Series, NRVBD640CTG Series MAXIMUM RATINGS MBRD/NRVBD/SBR Symbol 620CT 630CT 640CT 650CT 660CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 50 60 V Average Rectified Forward Current TC = 130°C (Rated VR) Per Diode Per Device IF(AV) Peak Repetitive Forward Current, TC = 130°C (Rated VR, Square Wave, 20 kHz) Per Diode IFRM Nonrepetitive Peak Surge Current − (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 75 A Peak Repetitive Reverse Surge Current (2 ms, 1 kHz) IRRM 1 A TJ −65 to +175 °C Storage Temperature Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Rating A 3 6 A 6 Operating Junction Temperature (Note 1) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS PER DIODE Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case RqJC 6 °C/W Maximum Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W Symbol Value Unit 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS PER DIODE Characteristic Maximum Instantaneous Forward Voltage (Note 3) iF = 3 Amps, TC = 25°C iF = 3 Amps, TC = 125°C iF = 6 Amps, TC = 25°C iF = 6 Amps, TC = 125°C VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C) iR 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 0.7 0.65 0.9 0.85 0.1 15 V mA MBRD620CTG Series, NRVBD640CTG Series TYPICAL CHARACTERISTICS 1000 70 100 I R , REVERSE CURRENT (mA) 100 50 30 150°C 10 125°C 1.0 75°C 0.1 0.01 10 0.001 7.0 0.0001 25°C 0 40 20 30 50 VR, REVERSE VOLTAGE (VOLTS) 10 5.0 3.0 Figure 2. Typical Reverse Current,* Per Leg 150°C 2.0 125°C 1.0 0.7 0.5 0.3 0.2 75°C TC = 25°C 0.1 0 0.2 70 60 *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 175°C PF(AV) , AVERAGE POWER DISSIPATION (WATTS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 20 TJ = 175°C 0.4 0.6 0.8 1.0 1.2 1.4 14 13 12 11 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 SINE WAVE 5 10 IPK/IAV = 20 SQUARE WAVE dc TJ = 150°C 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage, Per Leg Figure 3. Average Power Dissipation, Per Leg http://onsemi.com 3 10 MBRD620CTG Series, NRVBD640CTG Series I F(AV) , AVERAGE FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 8.0 RATED VOLTAGE APPLIED 7.0 RqJC = 6°C/W 6.0 TJ = 150°C 5.0 SINE WAVE OR SQUARE WAVE 4.0 3.0 dc 2.0 1.0 0 80 90 100 110 120 140 130 150 160 TC, CASE TEMPERATURE (°C) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating, Case, Per Leg 4.0 RqJA = 80°C/W SURFACE MOUNTED ON MIN. PAD SIZE RECOMMENDED TJ = 150°C 3.5 3.0 dc SQUARE WAVE OR SINE WAVE 2.5 VR = 25 V 2.0 1.5 VR = 60 V 1.0 0.5 0 0 20 40 60 100 80 120 140 160 TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Ambient, Per Leg C, CAPACITANCE (pF) 1K TJ = 25°C 100 10 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance, Per Leg http://onsemi.com 4 70 MBRD620CTG Series, NRVBD640CTG Series ORDERING INFORMATION Device Package Shipping† MBRD620CTT4G 2500 / Tape & Reel MBRD630CTT4G 2500 / Tape & Reel MBRD640CTG 75 Units / Rail NRVBD640CTG 75 Units / Rail MBRD640CTT4G 2500 / Tape & Reel NRVBD640CTT4G 2500 / Tape & Reel MBRD650CTG MBRD650CTT4G DPAK (Pb−Free) NRVBD650CTT4G 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel MBRD660CTG 75 Units / Rail NRVBD660CTG 75 Units / Rail MBRD660CTRLG 1800 / Tape & Reel MBRD660CTT4G 2500 / Tape & Reel NRVBD660CTT4G 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MBRD620CTG Series, NRVBD640CTG Series PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRD620CT/D