MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very High Blocking Voltage − 200 V 175°C Operating Junction Temperature Guard−Ring for Stress Protection NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AEC−Q101 Qualified and PPAP Capable All Packages are Pb−Free* http://onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS SMB CASE 403A PLASTIC MARKING DIAGRAM Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal AYWW B320G G Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: ♦ Machine Model = A ♦ Human Body Model = 1C B320 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBRS3200T3G SMB (Pb−Free) 2,500 / Tape & Reel NRVBS3200T3G SMB (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. 5 1 Publication Order Number: MBRS3200T3/D MBRS3200T3G, NRVBS3200T3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 200 V Average Rectified Forward Current (TL = 120 °C) IF(AV) 3.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature TJ A 100 −65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RqJL RqJA 13 62 °C/W Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) (IF = 3.0 A, TJ = 25°C) (IF = 4.0 A, TJ = 25°C) (IF = 3.0 A, TJ = 150°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) IR V 0.84 0.86 0.59 1.0 5.0 mA mA 1. Minimum pad size (0.108 × 0.085 inch) for each lead on FR4 board. 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. TA = 150°C 10 TA = 175°C TA = 25°C 1 0.1 100 TA = 100°C IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 TA = 100°C TA = 175°C 10 TA = 25°C 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 TA = 150°C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VF, FORWARD VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 MBRS3200T3G, NRVBS3200T3G 1.0E−02 1.0E−02 TA = 175°C TA = 150°C TA = 100°C 1.0E−06 1.0E−07 1.0E−09 0 TA = 100°C 1.0E−05 1.0E−06 1.0E−08 TA = 150°C 1.0E−04 1.0E−04 1.0E−05 TA = 175°C 1.0E−03 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 1.0E−03 TA = 25°C 1.0E−07 TA = 25°C 20 40 1.0E−08 60 80 100 120 140 160 180 200 1.0E−09 0 20 40 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current 100 IF, AVERAGE FORWARD CURRENT (A) 7 TC = 25°C f = 1 MHz Typical Capacitance at 0 V = 209 V 100 0 20 40 60 80 120 140 160 180 200 100 120 140 160 180 200 RqJL = 13°C/W 6 dc 5 SQUARE WAVE 4 3 2 1 0 80 90 100 110 120 130 140 150 160 170 180 VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating − Lead Pfo, AVERAGE POWER DISSIPATION (W) C, CAPACITANCE (pF) 80 Figure 4. Maximum Reverse Current 1000 10 60 VR, REVERSE VOLTAGE (V) 5 4.5 4 SQUARE WAVE 3.5 dc 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 IO, AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation http://onsemi.com 3 6 MBRS3200T3G, NRVBS3200T3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE H HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.90 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.20 2.28 0.10 0.19 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.075 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.087 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.090 0.007 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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