ONSEMI NSVBAS70LT1G

BAS70LT1G,
NSVBAS70LT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features





Extremely Fast Switching Speed
Low Forward Voltage
AEC Qualified and PPAP Capable
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
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70 VOLTS SCHOTTKY
BARRIER DIODES
SOT−23 (TO−236)
CASE 318
STYLE 8
MAXIMUM RATINGS (TJ = 150C unless otherwise noted)
Symbol
Value
Unit
IF
70
mA
IFSM
100
mA
Reverse Voltage
VR
70
V
Forward Power Dissipation
@ TA = 25C
Derate above 25C
PF
Rating
Forward Current
Non−Repetitive Peak Forward Surge
Current (t  1.0 s)
Operating Junction and Storage
Temperature Range
TJ, Tstg
225
1.8
mW
mW/C
−55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
CATHODE
1
ANODE
MARKING DIAGRAM
BE M G
G
1
BE
M
G
Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
BAS70LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
NSVBAS70LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 8
1
Publication Order Number:
BAS70LT1/D
BAS70LT1G, NSVBAS70LT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Symbol
Characteristic
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
Total Capacitance
(VR = 0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 50 V)
(VR = 70 V)
IR
Forward Voltage
(IF = 1.0 mA)
VF
Forward Voltage
(IF = 10 mA)
VF
Forward Voltage
(IF = 15 mA)
VF
Max
70
−
−
2.0
−
−
0.1
10
−
410
−
750
−
1.0
Unit
V
pF
mA
mV
mV
V
IR , REVERSE CURRENT (A)
100
10
1.0
150C
125C
0.1
0
0.1
TA = 150C
10
125C
1.0
85C
0.1
0.01
-40C
85C
25C
25C
-55C
0.2
0.3
0.4
0.5
0.001
0.6
0.7
0.8
0.9
0
1.0
5.0
25
30
35
15
20
VR, REVERSE VOLTAGE (VOLTS)
10
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5.0
10
40
45
Figure 2. Reverse Current versus Reverse
Voltage
1.4
C T, CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
Min
15
20
25
30
35
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
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2
45
50
50
BAS70LT1G, NSVBAS70LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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3
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
BAS70LT1/D