ONSEMI NTD6415ANLT4G

NTD6415ANL, NVD6415ANL
N-Channel Power MOSFET
100 V, 23 A, 56 mW, Logic
Level
Features
•
•
•
•
•
Low RDS(on)
100% Avalanche Tested
AEC−Q101 Qualified
AEC Q101 Qualified − NVD6415ANL
These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
V(BR)DSS
RDS(on) MAX
56 mW @ 4.5 V
100 V
52 mW @ 10 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current
Steady
State
Power Dissipation
Steady
State
Pulsed Drain Current
TC = 25°C
Symbol
Value
Unit
VDSS
100
V
VGS
$20
V
ID
23
A
TC = 100°C
TC = 25°C
tp = 10 ms
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
23 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
D
G
16
PD
83
W
IDM
80
A
TJ, Tstg
−55 to
+175
°C
IS
23
A
EAS
79
mJ
TL
260
°C
THERMAL RESISTANCE RATINGS
Parameter
23 A
Symbol
Max
Unit
Junction−to−Case (Drain) − Steady State
RqJC
1.8
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
39
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
S
4
1 2
3
DPAK
CASE 369AA
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4 Drain
YWW
6415ANLG
Parameter
ID MAX
1
Gate
6415ANL
Y
WW
G
2
Drain
3
Source
= Device Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 1
1
Publication Order Number:
NTD6415ANL/D
NTD6415ANL, NVD6415ANL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID = 250 mA, TJ = −40°C
100
92
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
V
115
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
VGS = 0 V,
VDS = 100 V
TJ = 25°C
mV/°C
1.0
TJ = 125°C
mA
100
"100
nA
2.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
1.0
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On−Resistance
RDS(on)
VGS = 4.5 V, ID = 10 A
44
56
VGS = 10 V, ID = 10 A
43
52
gFS
VDS = 5.0 V, ID = 10 A
24
S
1024
pF
Forward Transconductance
4.8
mV/°C
mW
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
70
Total Gate Charge
QG(TOT)
20
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
Total Gate Charge
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 80 V, ID = 23 A
QGD
QG(TOT)
156
nC
1.1
3.1
14
VGS = 10 V, VDS = 80 V, ID = 23 A
35
nC
11
ns
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
td(on)
tr
Turn−Off Delay Time
Fall Time
td(off)
VGS = 4.5 V, VDD = 80 V,
ID = 23 A, RG = 6.1 W
tf
91
40
71
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = 23 A
TJ = 25°C
0.87
TJ = 125°C
0.74
Reverse Recovery Time
tRR
64
Charge Time
Ta
40
Discharge Time
Tb
Reverse Recovery Charge
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 23 A
QRR
1.2
V
ns
24
152
nC
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Package
Shipping†
NTD6415ANLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD6415ANLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
http://onsemi.com
2
NTD6415ANL, NVD6415ANL
45
4V
5V
35
30
3.4 V
25
3.2 V
20
15
3.0 V
10
2.8 V
35
30
25
20
10
5
0
0
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5
TJ = 25°C
15
5
0
VDS w 10 V
40
3.6 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
40
45
TJ = 25°C
VGS = 10 V
TJ = 125°C
TJ = −55°C
1
2
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.050
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.050
ID = 23 A
TJ = 25°C
0.048
TJ = 25°C
0.048
0.046
0.046
0.044
VGS = 4.5 V
0.044
0.042
0.040
VGS = 10 V
0.042
2
3
4
5
6
7
8
9
10
0.040
5
20
25
10000
VGS = 0 V
IDSS, LEAKAGE (nA)
ID = 23 A
VGS = 4.5 V
2.0
1.5
1.0
0.5
−50
15
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
3.0
2.5
10
ID, DRAIN CURRENT (A)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Region versus Gate Voltage
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
4
−25
0
25
50
75
100
125
150
175
TJ = 150°C
1000
TJ = 125°C
100
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
3
C, CAPACITANCE (pF)
2500
TJ = 25°C
VGS = 0 V
2000
1500
Ciss
1000
500
0
Crss
0
10
Coss
20
30
40
50
60
70
80
90
VGS, GATE−TO−SOURCE VOLTAGE (V)
NTD6415ANL, NVD6415ANL
100
6
Qds
4
Qgs
VDS = 80 V
ID = 23 A
TJ = 25°C
2
0
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
25
IS, SOURCE CURRENT (A)
tr
100
tf
10
td(off)
td(on)
1
100
10
100
TJ = 25°C
VGS = 0 V
20
15
10
5
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
125
ID = 23 A
AVALANCHE ENERGY (mJ)
t, TIME (ns)
8
Figure 7. Capacitance Variation
VDS = 80 V
ID = 23 A
VGS = 4.5 V
ID, DRAIN CURRENT (A)
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
10
10 ms
10
100 ms
VGS = 10 V
SINGLE PULSE
TC = 25°C
1
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100
75
50
25
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE
175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
4
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
NTD6415ANL, NVD6415ANL
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 13. Thermal Response
http://onsemi.com
5
0.1
1
10
NTD6415ANL, NVD6415ANL
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE B
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,
affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury
or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTD6415ANL/D