ONSEMI NTP5862NG

NTD5862N, NTP5862N
N-Channel Power MOSFET
60 V, 98 A, 5.7 mW
Features
•
•
•
•
Low RDS(on)
High Current Capability
100% Avalanche Tested
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
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V(BR)DSS
RDS(on) MAX
ID MAX
60 V
5.7 mW @ 10 V
98 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
D
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
"20
V
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 ms)
VGS
"30
V
ID
98
A
Parameter
Power Dissipation
(RqJC)
TC = 25°C
Steady
State
TC = 100°C
69
PD
115
W
IDM
335
A
TJ, Tstg
−55 to
175
°C
IS
96
A
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
EAS
205
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Pulsed Drain Current
TC = 25°C
S
N−CHANNEL MOSFET
4
4
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
4
1 2
3
1
2
3
DPAK
DPAK
CASE 369C
CASE 369D
(Surface Mount)
(Straight Lead)
STYLE 2
STYLE 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
RqJC
1.3
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
37
1. Limited by package to 50 A continuous.
2. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
2
3
TO−220AB
CASE 221A
STYLE 5
4
Drain
4
Drain
4
Drain
YWW
58
62NG
Parameter
1
MARKING DIAGRAMS
& PIN ASSIGNMENT
YWW
58
62NG
Continuous Drain Current (RqJC) (Note 1)
G
2
1 Drain 3
Gate Source
NTP
5862NG
AYWW
1
Gate
1 2 3
Gate Drain Source
A
Y
WW
5862N
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
3
Source
2
Drain
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 2
1
Publication Order Number:
NTD5862N/D
NTD5862N, NTP5862N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
47
IDSS
Gate−to−Source Leakage Current
V
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
4.0
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
2.0
−9.7
RDS(on)
VGS = 10 V, ID = 45 A
4.4
gFS
VDS = 15 V, ID = 10 A
18
mV/°C
5.7
mW
S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
5050
6000
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
500
600
300
420
VGS = 10 V, VDS = 48 V,
ID = 45 A
pF
nC
Total Gate Charge
QG(TOT)
82
Threshold Gate Charge
QG(TH)
5.2
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
27
RG
0.6
W
td(on)
18
ns
tr
70
Gate Resistance
24
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDD = 48 V,
ID = 45 A, RG = 2.5 W
tf
35
60
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V,
IS = 45 A
TJ = 25°C
0.9
TJ = 100°C
0.75
tRR
38
Charge Time
ta
20
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 45 A
QRR
1.2
V
ns
18
40
nC
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number
NTD5862N−1G
NTD5862NT4G
NTP5862NG
Package
Shipping†
DPAK (Straight Lead)
(Pb−Free)
75 Units / Rail
DPAK (Pb−Free)
2500 / Tape & Reel
TO−220AB (Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTD5862N, NTP5862N
TYPICAL CHARACTERISTICS
200
TJ = 25°C VGS = 10 V
160
6.0 V
120
5.8 V
5.6 V
80
40
VDS ≥ 5 V
180
6.2 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
200
5.2 V
160
140
120
100
80
TJ = 25°C
60
40
20
0
1
2
3
4
5
5
6
7
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 45 A
TJ = 25°C
0.020
0.015
0.010
0.005
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.006
VGS = 10 V
TJ = 25°C
0.005
0.004
0.003
10
20
30
40
50
60
70
80
90
100
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
100000
2.2
VGS = 0 V
ID = 45 A
VGS = 10 V
1.8
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.025
2.0
TJ = −55°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.030
0.000
TJ = 125°C
0
3
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1.6
TJ = 150°C
10000
1.4
1.2
1.0
TJ = 125°C
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
1000
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTD5862N, NTP5862N
TYPICAL CHARACTERISTICS
6000
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
5000
10
VGS = 0 V
TJ = 25°C
Ciss
4000
3000
2000
Coss
1000
0
0
Crss
10
20
30
40
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
60
QT
9
8
7
6
Qgs
4
3
VDS = 48 V
ID = 45 A
TJ = 25°C
2
1
0
0
10
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (A)
t, TIME (ns)
100
tr
td(on)
tf
td(off)
10
1
1
10
100
90
VGS = 0 V
TJ = 25°C
80
60
40
20
0
0.50
0.60
0.70
0.80
0.90
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100 ms 10 ms
10
VGS = 10 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
ID = 37 A
200
AVALANCHE ENERGY (mJ)
1 ms
10 ms
dc
0.1
1.10
RG, GATE RESISTANCE (W)
225
100
1.00
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
ID, DRAIN CURRENT (A)
80
100
VDD = 48 V
ID = 45 A
VGS = 10 V
0.1
20
30
40
50
60
70
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source vs. Total Charge
1000
1
Qgd
5
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
175
150
125
100
75
50
25
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD5862N, NTP5862N
TYPICAL CHARACTERISTICS
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
0.1
1
10
NTD5862N, NTP5862N
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
−T−
B
F
T
SEATING
PLANE
C
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 5:
PIN 1.
2.
3.
4.
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6
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
NTD5862N, NTP5862N
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NTD5862N, NTP5862N
PACKAGE DIMENSIONS
DPAK
CASE 369D
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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8
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For additional information, please contact your local
Sales Representative
NTD5862N/D