ONSEMI NTSV2080CT

NTSV2080CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.50 V at IF = 5 A
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Features
PIN CONNECTIONS
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
1
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2, 4
3
4
TO−220AB
CASE 221A
STYLE 6
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
•
•
•
•
1
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
2
3
MARKING DIAGRAMS
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
AY WW
TSV2080CG
AKA
A
Y
WW
AKA
G
= Assembly Location
= Year
= Work Week
= Polarity Designator
= Pb−Free Package/Halide Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
June, 2012 − Rev. 0
1
Publication Order Number:
NTSV2080CT/D
NTSV2080CT
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 130°C)
Per device
Per diode
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 125°C)
Per device
Per diode
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Symbol
Value
Unit
VRRM
VRWM
VR
80
V
IF(AV)
A
20
10
IFRM
A
40
20
IFSM
100
A
TJ
−40 to +150
°C
Storage Temperature
Tstg
−40 to +150
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Operating Junction Temperature
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Symbol
Value
Unit
RqJC
RqJA
2.0
70
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
vF
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
Typ
Max
0.55
0.65
−
0.98
0.50
0.58
−
0.82
20
10
600
20
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device
NTSV2080CTG
Package
Shipping
TO−220AB
(Pb−Free/Halide Free)
50 Units / Rail
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2
Unit
V
mA
mA
NTSV2080CT
100
100
TA = 150°C
TA = 150°C
TA = 25°C
I R , REVERSE CURRENT (mA)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL CHARACTERISITICS
10
TA = 125°C
1.0
0.1
10
TA = 125°C
1.0
0.1
0.01
TA = 25°C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
20
CJ, JUNCTION CAPACITANCE (pF)
10000
TJ = 25°C
1000
100
10
0.1
1
10
VR, REVERSE VOLTAGE (VOLTS)
100
RqJC = 1.3°C/W
dc
15
10
SQUARE WAVE
5
0
0
dc
25
SQUARE WAVE
15
10
5
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
20
RqJC = 1.3°C/W
30
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
Figure 4. Current Derating per Leg
40
20
80
20
Figure 3. Typical Junction Capacitance
35
50
70
40
60
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 1. Typical Forward Voltage
30
16
IPK/IAV = 5
IPK/IAV = 20
14
SQUARE
WAVE
12
10
dc
8
6
4
2
0
140
IPK/IAV = 10
18
TA = 150°C
0
4
8
12
16
20
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
24
NTSV2080CT
TYPICAL CHARACTERISITICS
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
10
1
50% Duty Cycle
20%
10%
0.1 5%
2%
1%
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
Figure 7. Typical Transient Thermal Response, Junction−to−Case
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4
100
1000
NTSV2080CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 6:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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NTSV2080CT/D