SFT1342 Ordering number : ENA1559A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SFT1342 General-Purpose Switching Device Applications Features • • Motor drive application 4V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) PW≤10μs, duty cycle≤1% --60 V ±20 V --12 A --48 A 1.0 W Allowable Power Dissipation PD 15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-004 7003-004 5.5 7.0 5.5 4 0.85 0.7 0.5 1.5 4 0.5 0.6 1 2 2.3 7.5 1 0.5 2.3 2 3 0 t o 0.2 0.6 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 2.5 0.8 0.8 1.6 0.85 1.2 SFT1342-TL-E 2.3 6.5 5.0 1.2 SFT1342-E 1.5 0.5 7.0 2.3 6.5 5.0 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA SANYO : TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL 2, 4 Electrical Connection T1342 1 LOT No. TL 3 http://semicon.sanyo.com/en/network 60612 TKIM/O1409PA TKIM TC-00002077 No.A1559-1/9 SFT1342 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Conditions Ratings min ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V --60 VDS=--10V, ID=--1mA VDS=--10V, ID=--6A --1.2 typ Unit max V --1 μA ±10 μA --2.6 11 ID=--6A, VGS=--10V ID=--6A, VGS=--4.5V ID=--6A, VGS=--4V V S 47 62 mΩ 62 87 mΩ 68 96 mΩ 1150 pF 115 pF Crss 95 pF Turn-ON Delay Time td(on) 10 ns Rise Time tr 37 ns Turn-OFF Delay Time td(off) 135 ns Fall Time tf 75 ns Total Gate Charge Qg 26 nC Gate-to-Source Charge Qgs 3.5 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--12A 5 IS=--12A, VGS=0V --0.95 nC --1.2 V Switching Time Test Circuit 0V --10V VDD= --30V VIN ID= --6A RL=5Ω VIN D PW=10μs D.C.≤1% VOUT G SFT1342 P.G 50Ω S Ordering Information Device SFT1342-E SFT1342-TL-E Package Shipping TP 500pcs./bag TP-FA 700pcs./reel memo Pb Free No. A1559-2/9 SFT1342 ID -- VDS --14 --7 --6 --3.0V --5 --4 --3 --12 --10 --8 --6 Ta= 75° C --25 °C Drain Current, ID -- A --8 Ta= -25°C 25° 7 5°C C .0V -3.5V - --4 --6 .0 --9 VDS= --10V --1 6 Drain Current, ID -- A --10 V --4 .0V -10 --11 ID -- VGS --16 .5 V .0V --12 --4 --2 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 0 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 Gate-to-Source Voltage, VGS -- V IT15024 RDS(on) -- VGS 140 --0.9 25 °C --2 VGS= --2.5V --1 RDS(on) -- Ta 160 --4.0 IT115025 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 100 ID= --6A 80 60 40 20 | yfs | -- ID 40 20 --40 --20 0 20 40 60 80 100 120 140 160 IT15027 IS -- VSD VGS=0V °C -25 = Ta °C 75 3 2 1.0 7 5 3 2 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 --1.2 IT15029 f=1MHz Ciss Ciss, Coss, Crss -- pF tf 5 3 tr td(on) 10 --1.0 1000 100 2 --0.8 2 td (off) 7 --0.6 Ciss, Coss, Crss -- VDS 3 VDD= --30V VGS= --10V 3 --0.4 Diode Forward Voltage, VSD -- V IT15028 SW Time -- ID 5 --0.01 --0.2 2 3 --25°C °C 25°C 25 Drain Current, ID -- A Switching Time, SW Time -- ns 60 --10 7 5 10 7 5 7 5 3 2 100 Coss 7 Crss 5 7 5 --0.1 80 3 2 2 0.1 7 --0.01 0A --6. = ID A 6.0 0V, = ---4. I = D , V A V GS 4.5 --6.0 = -I D= , V V GS 0.0 = --1 VGS Ambient Temperature, Ta -- °C VDS= --10V 3 100 IT15026 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 120 0 --60 0 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 Gate-to-Source Voltage, VGS -- V 140 Ta=7 5°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 7 --10 2 3 IT15030 3 0 --10 --20 --30 --40 --50 Drain-to-Source Voltage, VDS -- V --60 IT15031 No.A1559-3/9 SFT1342 VGS -- Qg --10 --9 --7 --6 --5 --4 --3 --2 0 5 10 15 20 25 PD -- Ta 2 ID= --12A DC 3 op 10 10m 0m s s era tio Operation in n this area is limited by RDS(on). 2 --1.0 7 5 30 he at sin k 0.4 0.2 0 20 40 60 80 100 3 5 7 --1.0 120 Ambient Temperature, Ta -- °C 140 160 IT12263 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT15033 PD -- Tc 20 0.8 0.6 2 IT115032 1.0 No Tc=25°C Single pulse --0.1 --0.1 Allowable Power Dissipation, PD -- W 1.2 Allowable Power Dissipation, PD -- W PW≤10μs 10 μs 10 0μ s 1m s --10 7 5 2 Total Gate Charge, Qg -- nC 0 IDP= --48A 3 --1 0 ASO 3 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --100 7 5 VDS= --30V ID= --12A 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15034 No. A1559-4/9 SFT1342 Taping Specification SFT1342-TL-E No.A1559-5/9 SFT1342 Outline Drawing SFT1342-TL-E Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No. A1559-6/9 SFT1342 Bag Packing Specification SFT1342-E No.A1559-7/9 SFT1342 Outline Drawing SFT1342-E Mass (g) Unit 0.315 mm * For reference No. A1559-8/9 SFT1342 Note on usage : Since the SFT1342 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1559-9/9