Rev. 1.11, Feb. 2010
K4T1G044QE
K4T1G084QE
K4T1G164QE
1Gb E-die DDR2 SDRAM
60FBGA/84FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
datasheet
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-1-
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
Revision History
Revision No.
History
Draft Date
Remark
Editor
1.0
- Initial Release
Aug. 2008
-
S.H.Kim
1.01
- Corrected Typo.
Sep. 2008
-
S.H.Kim
1.1
- Updated AC/DC operating condition with the JEDEC updated
(JESD79-2E)
Dec. 2008
-
S.H.Kim
1.11
- Changed layout
Feb. 2010
-
S.H.Kim
-2-
K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
Table Of Contents
1Gb E-die DDR2 SDRAM
1. Ordering Information ..................................................................................................................................................... 4
2. Key Features................................................................................................................................................................. 4
3. Package pinout/Mechanical Dimension & Addressing.................................................................................................. 5
3.1 x4 Package Pinout (Top view) : 60ball FBGA Package .......................................................................................... 5
3.2 x8 Package Pinout (Top view) : 60ball FBGA Package .......................................................................................... 6
3.3 x16 Package Pinout (Top view) : 84ball FBGA Package ........................................................................................ 7
3.4 FBGA Package Dimension (x4/x8) .......................................................................................................................... 8
3.5 FBGA Package Dimension (x16)............................................................................................................................. 9
4. Input/Output Functional Description.............................................................................................................................. 10
5. DDR2 SDRAM Addressing ........................................................................................................................................... 11
6. Absolute Maximum Ratings .......................................................................................................................................... 12
7. AC & DC Operating Conditions..................................................................................................................................... 12
7.1 Recommended DC operating Conditions (SSTL_1.8)............................................................................................. 12
7.2 Operating Temperature Condition ........................................................................................................................... 13
7.3 Input DC Logic Level ............................................................................................................................................... 13
7.4 Input AC Logic Level ............................................................................................................................................... 13
7.5 AC Input Test Conditions......................................................................................................................................... 13
7.6 Differential input AC logic Level............................................................................................................................... 14
7.7 Differential AC output parameters ........................................................................................................................... 14
8. ODT DC electrical characteristics ................................................................................................................................. 14
9. OCD default characteristics .......................................................................................................................................... 15
10. IDD Specification Parameters and Test Conditions .................................................................................................... 16
11. DDR2 SDRAM IDD Spec Table .................................................................................................................................. 18
12. Input/Output capacitance ............................................................................................................................................ 20
13. Electrical Characteristics & AC Timing for DDR2-800/667 ......................................................................................... 20
13.1 Refresh Parameters by Device Density................................................................................................................. 20
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin ................................................................ 20
13.3 Timing Parameters by Speed Grade ..................................................................................................................... 21
14. General notes, which may apply for all AC parameters .............................................................................................. 23
15. Specific Notes for dedicated AC parameters .............................................................................................................. 25
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K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
1. Ordering Information
Organization
DDR2-800 5-5-5
DDR2-800 6-6-6
DDR2-667 5-5-5
Package
256Mx4
K4T1G044QE-HC(L)E7
K4T1G044QE-HC(L)F7
K4T1G044QE-HC(L)E6
60 FBGA
128Mx8
K4T1G084QE-HC(L)E7
K4T1G084QE-HC(L)F7
K4T1G084QE-HC(L)E6
60 FBGA
64Mx16
K4T1G164QE-HC(L)E7
K4T1G164QE-HC(L)F7
K4T1G164QE-HC(L)E6
84 FBGA
NOTE :
1. Speed bin is in order of CL-tRCD-tRP.
2. RoHS Compliant.
3. “H” of Part number(12th digit) stands for Lead-Free, Halogen-Free, and RoHS compliant products.
4. “C” of Part number(13th digit) stands normal, and “L” stands for Low power products.
2. Key Features
Speed
DDR2-800 5-5-5
DDR2-800 6-6-6
DDR2-667 5-5-5
Units
CAS Latency
5
6
5
tCK
tRCD(min)
12.5
15
15
ns
tRP(min)
12.5
15
15
ns
tRC(min)
57.5
60
60
ns
• JEDEC standard VDD = 1.8V ± 0.1V Power Supply
The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit
• VDDQ = 1.8V ± 0.1V
x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous
• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
• 8 Banks
• Posted CAS
device achieves high speed double-data-rate transfer rates of up to 800Mb/
sec/pin (DDR2-800) for general applications.
The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency
• Programmable CAS Latency: 3, 4, 5, 6
- 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
• Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
All of the control and address inputs are synchronized with a pair of exter-
• Write Latency(WL) = Read Latency(RL) -1
nally supplied differential clocks. Inputs are latched at the crosspoint of dif-
• Burst Length: 4 , 8(Interleave/nibble sequential)
ferential clocks (CK rising and CK falling). All I/Os are synchronized with a
• Programmable Sequential / Interleave Burst Mode
pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an
optional feature)
ion. The address bus is used to convey row, column, and bank address
• Off-Chip Driver(OCD) Impedance Adjustment
receive 14/10/3 addressing.
• On Die Termination
The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power supply
• Special Function Support
- 50ohm ODT
- High Temperature Self-Refresh rate enable
The 1Gb DDR2 device is available in 60ball FBGA(x4/x8) and in 84ball
information in a RAS/CAS multiplexing style. For example, 1Gb(x8) device
and 1.8V ± 0.1V VDDQ.
FBGA(x16).
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at
85°C < TCASE < 95 °C
• All of products are Lead-Free, Halogen-Free, and RoHS compliant
NOTE :
1. This data sheet is an abstract of full DDR2 specification and does not cover the common features which are described in “DDR2 SDRAM Device Operation & Timing Diagram”.
2. The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation.
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K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
3. Package pinout/Mechanical Dimension & Addressing
3.1 x4 Package Pinout (Top view) : 60ball FBGA Package
1
2
3
VDD
NC
VSS
B
NC
VSSQ
C
VDDQ
DQ1
D
NC
VSSQ
E
VDDL
VREF
A
F
G
BA2
H
J
VSS
K
L
VDD
4
5
6
7
8
9
VSSQ
DQS
VDDQ
DM
DQS
VSSQ
NC
VDDQ
VDDQ
DQ0
VDDQ
DQ3
DQ2
VSSQ
NC
VSS
VSSDL
CK
VDD
CKE
WE
RAS
CK
ODT0
BA0
BA1
CAS
CS
A10/AP
A1
A2
A0
A3
A5
A6
A4
A7
A9
A11
A8
A12
NC
NC
A13
VDD
VSS
NOTE : VDDL and VSSDL are power and ground for the DLL. It is recommended that they be isolated on the device from VDD,VDDQ, VSS, and VSSQ.
1
Ball Locations (x4)
A
B
C
Populated ball
Ball not populated
D
E
F
G
H
Top view
(See the balls through package)
J
K
L
-5-
2
3
4
5
6
7
8
9
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
3.2 x8 Package Pinout (Top view) : 60ball FBGA Package
1
2
3
VDD
NU/RDQS
VSS
B
DQ6
VSSQ
C
VDDQ
DQ1
D
DQ4
E
VDDL
A
F
G
BA2
H
J
VSS
K
L
VDD
4
5
6
7
8
9
VSSQ
DQS
VDDQ
DM/RDQS
DQS
VSSQ
DQ7
VDDQ
VDDQ
DQ0
VDDQ
VSSQ
DQ3
DQ2
VSSQ
DQ5
VREF
VSS
VSSDL
CK
VDD
CKE
WE
RAS
CK
ODT0
BA0
BA1
CAS
CS
A10/AP
A1
A2
A0
A3
A5
A6
A4
A7
A9
A11
A8
A12
NC
NC
A13
VDD
VSS
NOTE :
1. Pins B3 and A2 have identical capacitances as pins B7 and A8.
2. For a Read, when enabled, strobe pair RDQS & RDQS are identical in function and timing to strobe pair DQS & DQS and input data masking
function is disabled.
3. The function of DM or RDQS/RDQS is enabled by EMRS command.
4. VDDL and VSSDL are power and ground for the DLL. It is recommended that they be isolated on the device from VDD,VDDQ, VSS, and VSSQ.
1
Ball Locations (x8)
A
B
C
Populated ball
Ball not populated
D
E
F
G
H
Top view
(See the balls through package)
J
K
L
-6-
2
3
4
5
6
7
8
9
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
3.3 x16 Package Pinout (Top view) : 84ball FBGA Package
1
2
3
A
VDD
NC
B
DQ14
C
VDDQ
D
DQ12
4
5
6
7
8
9
VSS
VSSQ
UDQS
VDDQ
VSSQ
UDM
UDQS
VSSQ
DQ15
DQ9
VDDQ
VDDQ
DQ8
VDDQ
VSSQ
DQ11
DQ10
VSSQ
DQ13
E
VDD
NC
VSS
VSSQ
LDQS
VDDQ
F
DQ6
VSSQ
LDM
LDQS
VSSQ
DQ7
G
VDDQ
DQ1
VDDQ
VDDQ
DQ0
VDDQ
H
DQ4
VSSQ
DQ3
DQ2
VSSQ
DQ5
J
VDDL
VREF
VSS
VSSDL
CK
VDD
CKE
WE
RAS
CK
ODT
BA0
BA1
CAS
CS
A10/AP
A1
A2
A0
VSS
A3
A5
A6
A4
A7
A9
A11
A8
VDD
A12
NC
NC
NC
K
L
BA2
M
N
P
R
VDD
VSS
NOTE : VDDL and VSSDL are power and ground for the DLL. It is recommended that they be isolated on the device from VDD, VDDQ, VSS, and VSSQ.
1
Ball Locations (x16)
A
B
C
Populated ball
Ball not populated
D
E
F
G
H
Top view
(See the balls through package)
J
K
L
M
N
P
R
-7-
2
3
4
5
6
7
8
9
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
3.4 FBGA Package Dimension (x4/x8)
Units : Millimeters
7.50 ± 0.10
A
0.80 x 8 = 6. 40
# A1 INDEX MARK
3.20
(Datum A)
0.80
9
8
7
1.60
6
5
4
B
3
2
1
A
B
D
E
0.80
H
J
4.00
F
G
9.50 ± 0.10
C
0.80 x 10 = 8.00
0.80
(Datum B)
K
L
(0.95)
60-∅0.45 Solder ball
(Post reflow 0.50 ± 0.05)
BOTTOM VIEW
0.10MAX
0.2 M A B
MOLDING AREA
(1.90)
7.50 ± 0.10
9.50 ± 0.10
#A1
0.35±0.05
1.10±0.10
TOP VIEW
-8-
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
3.5 FBGA Package Dimension (x16)
Units : Millimeters
7.50 ± 0.10
A
0.80 x 8 = 6. 40
# A1 INDEX MARK
3.20
0.80
9
(Datum A)
8
7
1.60
6
5
4
B
3
2
1
A
B
C
D
F
G
H
0.80
J
K
5.60
L
12.50 ± 0.10
E
0.80 x 14 = 11.20
0.80
(Datum B)
M
N
P
R
(0.95)
0.2 M A B
BOTTOM VIEW
0.10MAX
84-∅0.45 Solder ball
(Post reflow 0.50 ± 0.05)
MOLDING AREA
(1.90)
7.50 ± 0.10
12.50 ± 0.10
#A1
0.35±0.05
1.10±0.10
TOP VIEW
-9-
K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
4. Input/Output Functional Description
Symbol
Type
Function
Input
Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the
positive edge of CK and negative edge of CK. Output (read) data is referenced to the crossings of CK and CK (both
directions of crossing).
CKE
Input
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and output drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or Active
Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self refresh entry.
CKE is asynchronous for self refresh exit. After VREF has become stable during the power on and initialization
sequence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh entry and exit, VREF
must be maintained to this input. CKE must be maintained high throughout read and write accesses. Input buffers,
excluding CK, CK, ODT and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during
self refresh.
CS
Input
Chip Select: All commands are masked when CS is registered HIGH. CS provides for external Rank selection on systems with multiple Ranks. CS is considered part of the command code.
ODT
Input
On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When
enabled, ODT is only applied to each DQ, DQS, DQS, RDQS, RDQS, and DM signal for x4/x8 configurations. For x16
configuration ODT is applied to each DQ, UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal. The ODT pin will be
ignored if the Extended Mode Register (EMRS(1)) is programmed to disable ODT.
RAS, CAS, WE
Input
Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
DM
Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coincident with that input data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only,
the DM loading matches the DQ and DQS loading. For x8 device, the function of DM or RDQS/RDQS is enabled by
EMRS command.
BA0 - BA2
Input
Bank Address Inputs: BA0, BA1 and BA2 define to which bank an Active, Read, Write or Precharge command is
being applied. Bank address also determines if the mode register or extended mode register is to be accessed during
a MRS or EMRS cycle.
A0 - A13
Input
Address Inputs: Provided the row address for Active commands and the column address and Auto Precharge bit for
Read/Write commands to select one location out of the memory array in the respective bank. A10 is sampled during a
Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If
only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op-code during Mode Register Set commands.
DQ
Input
/Output
Data Input/ Output: Bi-directional data bus.
Input
/Output
Data Strobe: output with read data, input with write data. Edge-aligned with read data, centered in write data. For the
x16, LDQS corresponds to the data on DQ0-DQ7; UDQS corresponds to the data on DQ8-DQ15. For the x8, an RDQS
option using DM pin can be enabled via the EMRS(1) to simplify read timing. The data strobes DQS, LDQS, UDQS,
and RDQS may be used in single ended mode or paired with optional complementary signals DQS, LDQS, UDQS, and
RDQS to provide differential pair signaling to the system during both reads and writes. An EMRS(1) control bit enables
or disables all complementary data strobe signals.
In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of EMRS(1)
x4 DQS/DQS
x8 DQS/DQS
if EMRS(1)[A11] = 0
x8 DQS/DQS, RDQS/RDQS,
if EMRS(1)[A11] = 1
x16 LDQS/LDQS and UDQS/UDQS
"single-ended DQS signals" refers to any of the following with A10 = 1 of EMRS(1)
x4 DQS
x8 DQS if EMRS(1)[A11] = 0
x8 DQS, RDQS, if EMRS(1)[A11] = 1
x16 LDQS and UDQS
CK, CK
DQS, (DQS)
(LDQS), (LDQS)
(UDQS), (UDQS)
(RDQS), (RDQS)
NC
No Connect: No internal electrical connection is present.
VDD / VDDQ
Supply
Power Supply: 1.8V +/- 0.1V, DQ Power Supply: 1.8V +/- 0.1V
VSS / VSSQ
Supply
Ground, DQ Ground
VDDL
Supply
DLL Power Supply: 1.8V +/- 0.1V
VSSDL
Supply
DLL Ground
VREF
Supply
Reference voltage
- 10 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
5. DDR2 SDRAM Addressing
1Gb Addressing
Configuration
256Mb x4
128Mb x 8
64Mb x16
# of Bank
8
8
8
Bank Address
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 ~ A13
A0 ~ A13
A0 ~ A12
Column Address
A0 ~ A9,A11
A0 ~ A9
A0 ~ A9
* Reference information: The following tables are address mapping information for other densities.
256Mb
Configuration
64Mb x4
32Mb x 8
16Mb x16
# of Bank
4
4
4
Bank Address
BA0,BA1
BA0,BA1
BA0,BA1
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 ~ A12
A0 ~ A12
A0 ~ A12
Column Address
A0 ~ A9,A11
A0 ~ A9
A0 ~ A8
Configuration
128Mb x4
64Mb x 8
32Mb x16
# of Bank
4
4
4
Bank Address
BA0,BA1
BA0,BA1
BA0,BA1
Auto precharge
A10/AP
A10/AP
A10/AP
512Mb
Row Address
A0 ~ A13
A0 ~ A13
A0 ~ A12
Column Address
A0 ~ A9,A11
A0 ~ A9
A0 ~ A9
Configuration
512Mb x4
256Mb x 8
128Mb x16
# of Bank
8
8
8
Bank Address
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
Auto precharge
A10/AP
A10/AP
A10/AP
2Gb
Row Address
A0 ~ A14
A0 ~ A14
A0 ~ A13
Column Address
A0 ~ A9,A11
A0 ~ A9
A0 ~ A9
Configuration
1 Gb x4
512Mb x 8
256Mb x16
4Gb
# of Bank
8
8
8
Bank Address
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 - A15
A0 - A15
A0 - A14
Column Address
A0 - A9,A11
A0 - A9
A0 - A9
- 11 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
6. Absolute Maximum Ratings
Symbol
Rating
Units
NOTE
Voltage on VDD pin relative to VSS
- 1.0 V ~ 2.3 V
V
1
VDDQ
Voltage on VDDQ pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
VDDL
Voltage on VDDL pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
Voltage on any pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
-55 to +100
°C
1, 2
VDD
VIN, VOUT
TSTG
Parameter
Storage Temperature
NOTE :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ. When VDD and VDDQ and VDDL are less than 500mV, VREF
may be equal to or less than 300mV.
4. Voltage on any input or I/O may not exceed voltage on VDDQ.
7. AC & DC Operating Conditions
7.1 Recommended DC operating Conditions (SSTL_1.8)
Symbol
Parameter
Rating
Min.
Typ.
Max.
Units
VDD
Supply Voltage
1.7
1.8
1.9
V
1.7
1.8
1.9
V
NOTE
VDDL
Supply Voltage for DLL
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
4
VREF
Input Reference Voltage
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
mV
1,2
Termination Voltage
VREF-0.04
VREF
VREF+0.04
V
3
VTT
4
NOTE : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting
device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDL tied together.
- 12 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
7.2 Operating Temperature Condition
Symbol
Parameter
Rating
Units
NOTE
TOPER
Operating Temperature
0 to 95
°C
1, 2
NOTE :
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2 standard.
2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self refresh mode at this
temperature range, an EMRS command is required to change internal refresh rate.
7.3 Input DC Logic Level
Symbol
Parameter
Min.
VIH(DC)
DC input logic high
DC input logic low
VIL(DC)
Max.
Units
VREF + 0.125
VDDQ + 0.3
V
- 0.3
VREF - 0.125
V
NOTE
7.4 Input AC Logic Level
Symbol
Parameter
VIH(AC)
VIL(AC)
DDR2-667, DDR2-800
NOTE
Min.
Max.
AC input logic high
VREF + 0.200
VDDQ + VPEAK
V
AC input logic low
VSSQ - VPEAK
VREF - 0.200
V
NOTE :
1. For information related to VPEAK value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak amplitude allowed for overshoot and undershoot.
7.5 AC Input Test Conditions
Symbol
Condition
Value
Units
NOTE
VREF
Input reference voltage
0.5 * VDDQ
V
1
VSWING(MAX)
Input signal maximum peak to peak swing
1.0
V
1
SLEW
Input signal minimum slew rate
1.0
V/ns
2, 3
NOTE :
1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC)
as shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative
VIH(AC) min
VIH(DC) min
VREF
VIL(DC) max
VIL(AC) max
delta TF
Falling Slew =
VSS
delta TR
VREF - VIL(AC) max
Rising Slew =
delta TF
VIH(AC) min - VREF
Figure 1. AC Input Test Signal Waveform
- 13 -
delta TR
max for falling edges
transitions.
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
7.6 Differential input AC logic Level
Symbol
Parameter
VID(AC)
AC differential input voltage
AC differential cross point voltage
VIX(AC)
Min.
Max.
Units
NOTE
0.5
VDDQ + 0.6
V
1
0.5 * VDDQ - 0.175
0.5 * VDDQ + 0.175
V
2
NOTE :
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to VIH (AC) - VIL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ . VIX(AC) indicates the voltage
at which differential input signals must cross.
3. For information related to VPEAK value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak amplitude allowed for overshoot and undershoot.
VDDQ
VTR
Crossing point
VID
VIX or VOX
VCP
VSSQ
Figure 2. Differential signal levels
7.7 Differential AC output parameters
Symbol
VOX(AC)
Parameter
AC differential cross point voltage
Min.
Max.
Units
NOTE
0.5 * VDDQ - 0.125
0.5 * VDDQ + 0.125
V
1
NOTE :
1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ .
voltage at which differential output signals must cross.
VOX(AC) indicates the
8. ODT DC electrical characteristics
PARAMETER/CONDITION
SYMBOL
MIN
NOM
MAX
UNITS
NOTE
Rtt1(eff)
60
75
90
ohm
1
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt2(eff)
120
150
180
ohm
1
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm
Rtt3(eff)
40
50
60
ohm
1
Deviation of VM with respect to VDDQ/2
delta VM
-6
+6
%
1
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
NOTE : Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH (AC)) and I( VIL (AC)) respectively. VIH (AC), VIL
(AC)(DC), and VDDQ values defined in SSTL_18
Rtt(eff) =
VIH (AC) - VIL (AC)
I(VIH (AC)) - I(VIL (AC))
delta VM =
2 x VM
VDDQ
-1
x 100%
Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load.
- 14 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
9. OCD default characteristics
Description
Parameter
Min
Max
18ohm at norminal condition
See full strength default driver characteristics
on device operation specification
Output impedance
Output impedance step size for OCD calibration
0
Pull-up and pull-down mismatch
Output slew rate
Nom
Sout
1.5
Unit
NOTE
ohm
1,2
ohm
6
0
4
ohm
1,2,3
1.5
5
V/ns
1,4,5,6,7,8
NOTE :
1. Absolute Specifications (0°C ≤ TCASE ≤ +95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)
2. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT
between VDDQ and VDDQ- 280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol must be less than 23.4 ohms for
values of VOUT between 0V and 280mV.
3. Mismatch is absolute value between pull-up and pull-down, both are measured at same temperature and voltage.
4. Slew rate measured from VIL(AC) to VIH(AC).
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is
guaranteed by design and characterization.
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.
Output slew rate load :
VTT
25 ohm
Output
Reference
Point
(VOUT)
7. DRAM output slew rate specification applies to 667Mb/sec/pin and 800Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mismatch between DQS / DQS and associated DQ is included in tDQSQ and tQHS specification.
- 15 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
10. IDD Specification Parameters and Test Conditions
(IDD values are for full operating range of Voltage and Temperature, Notes 1 - 5)
Symbol
Proposed Conditions
Units
IDD0
Operating one bank active-precharge current;
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD1
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD =
tRCD(IDD); CKE is HIGH, CS is HIGH between valid commands; Address businputs are SWITCHING; Data pattern
is same as IDD4W
mA
IDD2P
Precharge power-down current;
All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
mA
IDD2Q
Precharge quiet standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputsare STABLE; Data
bus inputs are FLOATING
mA
IDD2N
Precharge standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
mA
IDD3P
Active power-down current;
Fast PDN Exit MRS(12) = 0
All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus
Slow PDN Exit MRS(12) = 1
inputs are STABLE; Data bus inputs are FLOATING
IDD3N
Active standby current;
All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD4W
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP
= tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
mA
IDD4R
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W
mA
IDD5B
Burst auto refresh current;
tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD6
Self refresh current;
CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are
FLOATING; Data bus inputs are FLOATING
IDD7
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC
= tRC(IDD), tRRD = tRRD(IDD), tFAW = tFAW(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid
commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the following page for detailed timing conditions
- 16 -
mA
mA
Normal
mA
Low Power
mA
mA
NOTE
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
NOTE :
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is specified by AC Parametric Test Condition
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
LOW is defined as VIN ≤ VIL(AC)max
HIGH is defined as VIN ≥ VIH(AC)min
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control
signals, and
inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including
masks or strobes.
For purposes of IDD testing, the following parameters are utilized
Parameter
DDR2-800
DDR2-800
DDR2-667
5-5-5
6-6-6
5-5-5
Units
CL(IDD)
5
6
5
tCK
tRCD(IDD)
12.5
15
15
ns
tRC(IDD)
57.5
60
60
ns
tRRD(IDD)-x4/x8
7.5
7.5
7.5
ns
ns
tRRD(IDD)-x16
10
10
10
tCK(IDD)
2.5
2.5
3
ns
tRASmin(IDD)
45
45
45
ns
tRP(IDD)
12.5
15
15
ns
tRFC(IDD)
127.5
127.5
127.5
ns
Detailed IDD7
The detailed timings are shown below for IDD7.
Legend: A = Active; RA = Read with Autoprecharge; D = Deselect
IDD7: Operating Current: All Bank Interleave Read operation
All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) and tFAW(IDD) using a burst length of 4. Control and address bus inputs are STABLE during
DESELECTs. IOUT = 0mA
Timing Patterns for 8bank devices x4/ x8
-DDR2-667 5/5/5 : A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D
-DDR2-800 6/6/6 : A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D
-DDR2-800 5/5/5 : A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D
Timing Patterns for 8bank devices x16
-DDR2-667 5/5/5 : A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D
-DDR2-800 6/6/6 : A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D
-DDR2-800 5/5/5 : A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D
- 17 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
11. DDR2 SDRAM IDD Spec Table
256Mx4 (K4T1G044QE)
Symbol
800@CL=5
CE7
800@CL=6
LE7
CF7
667@CL=5
LF7
CE6
Unit
IDD0
52
52
50
mA
IDD1
58
58
55
mA
IDD2P
10
5
10
5
10
5
mA
IDD2Q
23
23
23
mA
IDD2N
28
28
27
mA
IDD3P-F
26
26
25
mA
IDD3P-S
15
15
15
mA
IDD3N
37
37
35
mA
IDD4W
67
67
60
mA
IDD4R
85
85
75
mA
IDD5
IDD6
120
120
10
5
IDD7
115
10
165
5
mA
10
165
NOTE
LE6
5
150
mA
mA
128Mx8 (K4T1G084QE)
Symbol
800@CL=5
CE7
800@CL=6
LE7
CF7
667@CL=5
LF7
CE6
Unit
LE6
IDD0
52
52
50
mA
IDD1
58
58
55
mA
IDD2P
10
5
10
5
10
5
mA
IDD2Q
23
23
23
mA
IDD2N
28
28
27
mA
IDD3P-F
26
26
25
mA
IDD3P-S
15
15
15
mA
IDD3N
37
37
35
mA
IDD4W
72
72
65
mA
IDD4R
90
90
80
mA
IDD5
IDD6
IDD7
120
10
120
5
170
10
115
5
170
10
155
- 18 -
mA
5
mA
mA
NOTE
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
64Mx16 (K4T1G164QE)
Symbol
800@CL=5
CE7
800@CL=6
LE7
CF7
667@CL=5
LF7
CE6
Unit
LE6
IDD0
65
65
60
mA
IDD1
75
75
70
mA
IDD2P
10
5
10
5
10
5
mA
IDD2Q
25
25
25
mA
IDD2N
32
32
30
mA
IDD3P-F
28
28
27
mA
IDD3P-S
15
15
15
mA
IDD3N
40
40
37
mA
IDD4W
95
95
90
mA
IDD4R
125
125
115
mA
IDD5
IDD6
IDD7
115
10
115
5
200
10
110
5
200
10
185
- 19 -
mA
5
mA
mA
NOTE
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
12. Input/Output capacitance
Parameter
DDR2-667
Symbol
Input capacitance, CK and CK
Input capacitance delta, CK and CK
DDR2-800
Max
Min
Max
Units
CCK
1.0
2.0
1.0
2.0
pF
CDCK
x
0.25
x
0.25
pF
Input capacitance, all other input-only pins
CI
1.0
2.0
1.0
1.75
pF
CDI
x
0.25
x
0.25
pF
CIO
2.5
3.5
2.5
3.5
pF
CDIO
x
0.5
x
0.5
pF
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Min
13. Electrical Characteristics & AC Timing for DDR2-800/667
(0 °C < TOPER < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V)
13.1 Refresh Parameters by Device Density
Parameter
Symbol
Refresh to active/Refresh command time
tRFC
Average periodic refresh interval
tREFI
256Mb
512Mb
1Gb
2Gb
4Gb
Units
75
105
127.5
195
327.5
ns
0 °C ≤ TCASE ≤ 85°C
7.8
7.8
7.8
7.8
7.8
μs
85 °C < TCASE ≤ 95°C
3.9
3.9
3.9
3.9
3.9
μs
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Speed
DDR2-800(E7)
DDR2-800(F7)
DDR2-667(E6)
Bin (CL - tRCD - tRP)
5-5-5
6-6-6
5-5-5
Units
Parameter
min
max
min
max
min
max
tCK, CL=3
5
8
-
-
5
8
ns
tCK, CL=4
3.75
8
3.75
8
3.75
8
ns
tCK, CL=5
2.5
8
3
8
3
8
ns
tCK, CL=6
-
-
2.5
8
-
-
ns
tRCD
12.5
-
15
-
15
-
ns
tRP
12.5
-
15
-
15
-
ns
tRC
57.5
-
60
-
60
-
ns
tRAS
45
70000
45
70000
45
70000
ns
- 20 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
13.3 Timing Parameters by Speed Grade
(For information related to the entries in this table, refer to both the general notes and the specific notes following this table.)
Parameter
Symbol
DDR2-800
DDR2-667
min
max
min
max
-400
400
-450
450
Units
NOTE
ps
40
DQ output access time from CK/CK
tAC
DQS output access time from CK/CK
tDQSCK
-350
350
-400
400
ps
40
Average clock HIGH pulse width
tCH(avg)
0.48
0.52
0.48
0.52
tCK(avg)
35,36
Average clock LOW pulse width
tCL(avg)
0.48
0.52
0.48
0.52
tCK(avg)
35,36
Min(tCL(abs),
tCH(abs))
x
Min(tCL(abs),
tCH(abs))
x
ps
37
CK half pulse period
tHP
Average clock period
tCK(avg)
2500
8000
3000
8000
ps
35,36
DQ and DM input hold time
tDH(base)
125
x
175
x
ps
6,7,8,21,28,31
DQ and DM input setup time
tDS(base)
50
x
100
x
ps
6,7,8,20,28,31
Control & Address input pulse width for each input
tIPW
0.6
x
0.6
x
tCK(avg)
DQ and DM input pulse width for each input
tDIPW
0.35
x
0.35
x
tCK(avg)
Data-out high-impedance time from CK/CK
tHZ
x
tAC(max)
x
tAC(max)
ps
18,40
DQS/DQS low-impedance time from CK/CK
tLZ(DQS)
tAC(min)
tAC(max)
tAC(min)
tAC(max)
ps
18,40
DQ low-impedance time from CK/CK
tLZ(DQ)
2* tAC(min)
tAC(max)
2* tAC(min)
tAC(max)
ps
18,40
DQS-DQ skew for DQS and associated DQ signals
tDQSQ
x
200
x
240
ps
13
DQ hold skew factor
tQHS
x
300
x
340
ps
38
DQ/DQS output hold time from DQS
tQH
tHP - tQHS
x
tHP - tQHS
x
ps
39
DQS latching rising transitions to associated clock edges
tDQSS
- 0.25
0.25
-0.25
0.25
tCK(avg)
30
DQS input HIGH pulse width
tDQSH
0.35
x
0.35
x
tCK(avg)
DQS input LOW pulse width
tDQSL
0.35
x
0.35
x
tCK(avg)
DQS falling edge to CK setup time
tDSS
0.2
x
0.2
x
tCK(avg)
30
DQS falling edge hold time from CK
tDSH
0.2
x
0.2
x
tCK(avg)
30
Mode register set command cycle time
tMRD
2
x
2
x
nCK
MRS command to ODT update delay
tMOD
0
12
0
12
ns
32
Write postamble
tWPST
0.4
0.6
0.4
0.6
tCK(avg)
10
Write preamble
tWPRE
0.35
x
0.35
x
tCK(avg)
Address and control input hold time
tIH(base)
250
x
275
x
ps
5,7,9,23,29
Address and control input setup time
tIS(base)
175
x
200
x
ps
5,7,9,22,29
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK(avg)
19,41
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK(avg)
19,42
Activate to activate command period for 1KB page size products tRRD
7.5
x
7.5
x
ns
4,32
Activate to activate command period for 2KB page size products tRRD
10
x
10
x
ns
4,32
- 21 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
Parameter
Symbol
DDR2 SDRAM
DDR2-800
DDR2-667
min
max
min
max
Units
NOTE
Four Activate Window for 1KB page size products
tFAW
35
x
37.5
x
ns
32
Four Activate Window for 2KB page size products
tFAW
45
x
50
x
ns
32
CAS to CAS command delay
tCCD
2
x
2
x
nCK
Write recovery time
tWR
15
x
15
x
ns
Auto precharge write recovery + precharge time
tDAL
WR + tnRP
x
WR + tnRP
x
nCK
33
Internal write to read command delay
tWTR
7.5
x
7.5
x
ns
24,32
Internal read to precharge command delay
tRTP
7.5
x
7.5
x
ns
3,32
Exit self refresh to a non-read command
tXSNR
tRFC + 10
x
tRFC + 10
x
ns
32
Exit self refresh to a read command
tXSRD
200
x
200
x
nCK
Exit precharge power down to any command
tXP
2
x
2
x
nCK
Exit active power down to read command
tXARD
2
x
2
x
nCK
1
Exit active power down to read command
(slow exit, lower power)
tXARDS
8 - AL
x
7 - AL
x
nCK
1,2
27
32
CKE minimum pulse width (HIGH and LOW pulse width)
tCKE
3
x
3
x
nCK
ODT turn-on delay
tAOND
2
2
2
2
nCK
16
ODT turn-on
tAON
tAC(min)
tAC(max)+0.7
tAC(min)
tAC(max)+0.7
ns
6,16,40
ODT turn-on (Power-Down mode)
tAONPD
tAC(min)+2
2*tCK(avg)
+tAC(max)+1
tAC(min)+2
2*tCK(avg)
+tAC(max)+1
ns
ODT turn-off delay
tAOFD
ODT turn-off
tAOF
ODT turn-off (Power-Down mode)
tAOFPD
ODT to power down entry latency
2.5
2.5
2.5
2.5
nCK
17,45
tAC(min)
tAC(max)+0.6
tAC(min)
tAC(max)+0.6
ns
17,43,45
tAC(min)+2
2.5*tCK(avg)+
tAC(max)+1
tAC(min)+2
2.5*tCK(avg)+
tAC(max)+1
ns
tANPD
3
x
3
x
nCK
ODT power down exit latency
tAXPD
8
x
8
x
nCK
OCD drive mode output delay
tOIT
0
12
0
12
ns
32
x
tIS+tCK(avg)
+tIH
x
ns
15
Minimum time clocks remains ON after CKE asynchronously
tDelay
drops LOW
tIS+tCK(avg)
+tIH
- 22 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
14. General notes, which may apply for all AC parameters
1. DDR2 SDRAM AC timing reference load
Figure 3 represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise repre
sentation of the typical system environment or a depiction of the actual load presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a
coaxial transmission line terminated at the tester electronics).
VDDQ
DUT
DQ
DQS
DQS
Output
VTT = VDDQ/2
RDQS
RDQS
25Ω
Timing
reference
point
Figure 3. AC Timing Reference Load
The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output timing reference voltage level for differential
signals is the crosspoint of the true (e.g. DQS) and the complement (e.g. DQS) signal.
2. Slew Rate Measurement Levels
a) Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for single ended signals. For differential signals
(e.g. DQS - DQS) output slew rate is measured between DQS - DQS = - 500 mV and DQS - DQS = + 500 mV. Output slew rate is guaranteed by
design, but is not necessarily tested on each device.
b) Input slew rate for single ended signals is measured from VREF(DC) to VIH(AC),min for rising edges and from VREF(DC) to VIL(AC),max for falling
edges. For differential signals (e.g. CK - CK) slew rate for rising edges is measured from CK - CK = - 250 mV to CK - CK = + 500 mV (+ 250 mV to 500 mV for falling edges).
c) VID is the magnitude of the difference between the input voltage on CK and the input voltage on CK, or between DQS and DQS for differential strobe.
3. DDR2 SDRAM output slew rate test load
Output slew rate is characterized under the test conditions as shown in Figure 4.
VDDQ
DUT
DQ
DQS, DQS
RDQS, RDQS
Output
VTT = VDDQ/2
25Ω
Test point
Figure 4. Slew Rate Test Load
- 23 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
4. Differential data strobe
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the setting of the EMRS "Enable DQS" mode bit;
timing advantages of differential mode are realized in system design. The method by which the DDR2 SDRAM pin timings are measured is mode dependent. In single ended mode, timing relationships are measured relative to the rising or falling edges of DQS crossing at VREF. In differential mode, these
timing relationships are measured relative to the crosspoint of DQS and its complement, DQS. This distinction in timing methods is guaranteed by design
and characterization. Note that when differential data strobe mode is disabled via the EMRS, the complementary pin, DQS, must be tied externally to VSS
through a 20 Ω to 10 kΩ resistor to insure proper operation.
tDQSH
DQS
DQS
DQS
tDQSL
DQS
tWPRE
tWPST
VIH(DC)
VIH(AC)
DQ
D
D
VIL(DC)
tDS
VIH(AC)
DM
D
D
VIL(AC)
DMin
tDH
tDH
tDS
VIH(DC)
DMin
DMin
DMin
VIL(AC)
VIL(DC)
Figure 5. Data Input (Write) Timing
tCH
tCL
CK
CK/CK
CK
DQS
DQS/DQS
DQS
tRPRE
tRPST
DQ
Q
Q
tDQSQ(max)
Q
Q
tDQSQ(max)
tQH
tQH
Figure 6. Data Output (Read) Timing
5. AC timings are for linear signal transitions. See Specific Notes on derating for other signal transitions.
6. All voltages are referenced to VSS.
7. These parameters guarantee device behavior, but they are not necessarily tested on each device.
They may be guaranteed by device design or tester correlation.
8. Tests for AC timing, IDD, and electrical (AC and DC) characteristics, may be conducted at nominal reference/supply voltage levels, but the related
specifications and device operation are guaranteed for the full voltage range specified.
- 24 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
15. Specific Notes for dedicated AC parameters
1. User can choose which active power down exit timing to use via MRS (bit 12). tXARD is expected to be used for fast active power down exit timing.
tXARDS is expected to be used for slow active power down exit timing.
2. AL = Additive Latency.
3. This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min) have been satisfied.
4. A minimum of two clocks (2 x tCK or 2 x nCK) is required irrespective of operating frequency.
5. Timings are specified with command/address input slew rate of 1.0 V/ns.
6. Timings are specified with DQs, DM, and DQS’s (DQS/RDQS in single ended mode) input slew rate of 1.0V/ns.
7. Timings are specified with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals with a differential slew rate of 2.0 V/ns in
differential strobe mode and a slew rate of 1.0 V/ns in single ended mode.
8. Data setup and hold time derating.
[ Table 1 ] DDR2-400/533 tDS/tDH derating with differential data strobe
ΔtDS, ΔtDH Derating Values of DDR2-400, DDR2-533 (ALL units in ‘ps’, the note applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns
DQ
Siew
rate
V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
1.0V/ns
0.8V/ns
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
2.0
125
45
125
45
125
45
-
-
-
-
-
-
-
-
-
-
-
-
1.5
83
21
83
21
83
21
95
33
-
-
-
-
-
-
-
-
-
-
1.0
0
0
0
0
0
0
12
12
24
24
-
-
-
-
-
-
-
-
0.9
-
-
-11
-14
-11
-14
1
-2
13
10
25
22
-
-
-
-
-
-
0.8
-
-
-
-
-25
-31
-13
-19
-1
-7
11
5
23
17
-
-
-
-
0.7
-
-
-
-
-
-
-31
-42
-19
-30
-7
-18
5
-6
17
6
-
-
0.6
-
-
-
-
-
-
-
-
-43
-59
-31
-47
-19
-35
-7
-23
5
-11
0.5
-
-
-
-
-
-
-
-
-
-
-74
-89
-62
-77
-50
-65
-38
-53
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-127
-140
-115
-128
-103
-116
[ Table 2 ] DDR2-667/800 tDS/tDH derating with differential data strobe
ΔtDS, ΔtDH Derating Values for DDR2-667, DDR2-800 (ALL units in ‘ps’, the note applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns
DQ
Slew
rate
V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4V/ns
1.2V/ns
1.0V/ns
0.8V/ns
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
ΔtDS
ΔtDH
2.0
100
45
100
45
100
45
-
-
-
-
-
-
-
-
-
-
-
-
1.5
67
21
67
21
67
21
79
33
-
-
-
-
-
-
-
-
-
-
1.0
0
0
0
0
0
0
12
12
24
24
-
-
-
-
-
-
-
-
0.9
-
-
-5
-14
-5
-14
7
-2
19
10
31
22
-
-
-
-
-
-
0.8
-
-
-
-
-13
-31
-1
-19
11
-7
23
5
35
17
-
-
-
-
0.7
-
-
-
-
-
-
-10
-42
2
-30
14
-18
26
-6
38
6
-
-
0.6
-
-
-
-
-
-
-
-
-10
-59
2
-47
14
-35
26
-23
38
-11
0.5
-
-
-
-
-
-
-
-
-
-
-24
-89
-12
-77
0
-65
12
-53
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-52
-140
-40
-128
-28
-116
- 25 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
[ Table 3 ] DDR2-400/533 tDS1/tDH1 derating with single-ended data strobe
ΔtDS1, ΔtDH1 Derating Values for DDR2-400, DDR2-533(All units in ‘ps’; the note applies to the entire table)
DQS Single-ended Slew Rate
2.0 V/ns
DQ
Slew
rate
V/ns
1.5 V/ns
1.0 V/ns
0.9 V/ns
ΔtDS
1
ΔtDH
1
0.8 V/ns
ΔtDS
1
ΔtDH
1
0.7 V/ns
ΔtDS
1
ΔtDH
1
0.6 V/ns
ΔtDS
1
ΔtDH
1
0.5 V/ns
ΔtDS
1
ΔtDH
1
0.4 V/ns
ΔtDS
1
ΔtDH
1
ΔtDS
1
ΔtDH
1
ΔtDS
1
ΔtDH
1
ΔtDS
1
ΔtDH
1
2.0
188
188
167
146
125
63
-
-
-
-
-
-
-
-
-
-
-
-
1.5
146
167
125
125
83
42
81
43
-
-
-
-
-
-
-
-
-
-
1.0
63
125
42
83
0
0
-2
1
-7
-13
-
-
-
-
-
-
-
-
0.9
-
-
31
69
-11
-14
-13
-13
-18
-27
-29
-45
-
-
-
-
-
-
0.8
-
-
-
-
-25
-31
-27
-30
-32
-44
-43
-62
-60
-86
-
-
-
-
0.7
-
-
-
-
-
-
-45
-53
-50
-67
-61
-85
-78
-109
-108
-152
-
-
0.6
-
-
-
-
-
-
-
-
-74
-96
-85
-114
-102
-138
-138
-181
-183
-246
0.5
-
-
-
-
-
-
-
-
-
-
-128
-156
-145
-180
-175
-223
-226
-288
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-210
-243
-240
-286
-291
-351
For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS(base) and tDH(base) value to the
ΔtDS and ΔtDH derating value respectively. Example: tDS (total setup time) =tDS(base) +ΔtDS.
Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min.
Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max. If
the actual signal is always earlier than the nominal slew rate line between shaded ’VREF(DC) to ac region’, use nominal slew rate for derating value (See
Figure 7 for differential data strobe and Figure 8 for single-ended data strobe.) If the actual signal is later than the nominal slew rate line anywhere
between shaded ’VREF(DC) to ac region’, the slew rate of a tangent line to the actual signal from the ac level to dc level is used for derating value (see Figure 9 for differential data strobe and Figure 10 for single-ended data strobe)
Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC).
Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If
the actual signal is always later than the nominal slew rate line between shaded ’dc level to VREF(DC) region’, use nominal slew rate for derating value
(see Figure 11 for differential data strobe and Figure 12 for single-ended data strobe) If the actual signal is earlier than the nominal slew rate line anywhere between shaded ’dc to VREF(DC) region’, the slew rate of a tangent line to the actual signal from the dc level to VREF(DC) level is used for derating
value (see Figure 13 for differential data strobe and Figure 14 for single-ended data strobe)
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(AC) at the time of the rising clock
transition) a valid input signal is still required to complete the transition and reach VIH/IL(AC).
For slew rates in between the values listed in Table 1, Table 2 and Table 3 the derating values may obtained by linear interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
- 26 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
DQS
DQS
tDS
tDH
tDS
tDH
VDDQ
VIH(AC)min
VREF to ac
region
VIH(DC)min
nominal
slew rate
VREF(DC)
nominal slew
rate
VIL(DC)max
VREF to ac
region
VIL(AC)max
tVAC
VSS
ΔTF
Setup Slew Rate=
Falling Signal
ΔTR
VREF(DC) - VIL(AC)max
ΔTF
Setup Slew Rate VIH(AC)min - VREF(DC)
Rising Signal =
ΔTR
Figure 7. IIIustration of nominal slew rate for tDS (differential DQS,DQS)
- 27 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DQS
Note1
DDR2 SDRAM
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
tDS
tDS
tDH
tDH
VDDQ
VIH(AC)min
VREF to ac
region
VIH(DC)min
nominal
slew rate
VREF(DC)
nominal slew
rate
VIL(DC)max
VREF to ac
region
VIL(AC)max
VSS
ΔTF
ΔTR
Setup Slew Rate= VREF(DC) - VIL(AC)max
Falling Signal
ΔTF
Setup Slew Rate VIH(AC)min - VREF(DC)
Rising Signal =
ΔTR
NOTE : DQS signal must be monotonic between VIL(AC)max and VIH(AC)min.
Figure 8. IIIustration of nominal slew rate for tDS (single-ended DQS)
- 28 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
DQS
DQS
tDH
tDS
VDDQ
tDS
tDH
nominal
line
VIH(AC)min
VREF to ac
region
VIH(DC)min
tangent
line
VREF(DC)
tangent
line
VIL(DC)max
VREF to ac
region
VIL(AC)max
nominal
line
ΔTR
VSS
ΔTF
Setup Slew Rate tangent line[VIH(AC)min - VREF(DC)]
=
Rising Signal
ΔTR
Setup Slew Rate tangent line[VREF(DC) - VIL(AC)max]
Falling Signal =
ΔTF
Figure 9. IIIustration of tangent line for tDS (differential DQS, DQS)
- 29 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
VDDQ
DQS VIH(AC)min
V (DC)min
Note1 VIH (DC)
REF
VIL(DC)max
VIL(AC)max
VSS
tDH
tDS
VDDQ
tDS
tDH
nominal
line
VIH(AC)min
VREF to ac
region
VIH(DC)min
tangent
line
VREF(DC)
tangent
line
VIL(DC)max
VREF to ac
region
VIL(AC)max
nominal
line
ΔTR
VSS
ΔTF
Setup Slew Rate tangent line[VIH(AC)min - VREF(DC)]
Rising Signal=
ΔTR
Setup Slew Rate tangent line[VREF(DC) - VIL(AC)max]
Falling Signal =
ΔTF
NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.
Figure 10. IIIustration of tangent line for tDS (single-ended DQS)
- 30 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
DQS
DQS
tDS
VDDQ
tDH
tDS
tDH
VIH(AC)min
VIH(DC)min
dc to VREF
region
nominal
slew rate
VREF(DC)
dc to VREF
region
nominal
slew rate
VIL(DC)max
VIL(AC)max
VSS
ΔTR
Hold Slew Rate VREF(DC) - VIL(DC)max
Rising Signal =
ΔTR
ΔTF
Hold Slew Rate VIH(DC)min - VREF(DC)
=
Falling Signal
ΔTF
Figure 11. IIIustration of nominal slew rate for tDH (differential DQS, DQS)
- 31 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DQS
Note1
DDR2 SDRAM
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
tDS
VDDQ
tDH
tDS
tDH
VIH(AC)min
VIH(DC)min
dc to VREF
region
nominal
slew rate
VREF(DC)
dc to VREF
region
nominal
slew rate
VIL(DC)max
VIL(AC)max
VSS
ΔTR
Hold Slew Rate VREF(DC) - VIL(DC)max
Rising Signal =
ΔTR
ΔTF
Hold Slew Rate VIH(DC)min - VREF(DC)
=
Falling Signal
ΔTF
NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.
Figure 12. IIIustration of nominal slew rate for tDH (single-ended DQS)
- 32 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
DQS
DQS
tDH
tDS
VDDQ
tDS
tDH
VIH(AC)min
nominal
line
VIH(DC)min
dc to VREF
region
tangent
line
VREF(DC)
dc to VREF
region
tangent
line
nominal
line
VIL(DC)max
VIL(AC)max
VSS
ΔTR
ΔTF
Hold Slew Rate tangent line [ VREF(DC) - VIL(DC)max ]
Rising Signal =
ΔTR
Hold Slew Rate tangent line [ VIH(DC)min - VREF(DC) ]
Falling Signal =
ΔTF
Figure 13. IIIustration of tangent line for tDH (differential DQS, DQS)
- 33 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
VDDQ
DQS VIH(AC)min
V (DC)min
Note1 VIH (DC)
REF
VIL(DC)max
VIL(AC)max
VSS
tDS
VDDQ
tDH
tDS
tDH
VIH(AC)min
nominal
line
VIH(DC)min
dc to VREF
region
tangent
line
VREF(DC)
dc to VREF
region
tangent
line
nominal
line
VIL(DC)max
VIL(AC)max
VSS
Hold Slew Rate
Rising Signal =
ΔTR
tangent line [ VREF(DC) - VIL(DC)max ]
ΔTR
ΔTF
Hold Slew Rate tangent line [ VIH(DC)min - VREF(DC) ]
Falling Signal =
ΔTF
NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.
Figure 14. IIIustration of tangent line for tDH (single-ended DQS)
- 34 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
9. tIS and tIH (input setup and hold) derating
[ Table 4 ] Derating values for DDR2-400, DDR2-533
ΔtIS, ΔtIH Derating Values for DDR2-400, DDR2-533
CK, CK Differential Slew Rate
2.0 V/ns
Command/
Address Slew
rate(V/ns)
1.5 V/ns
1.0 V/ns
Units
NOTE
+154
ps
1
+239
+149
ps
1
+227
+143
ps
1
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
4.0
+187
+94
+217
+124
+247
3.5
+179
+89
+209
+119
3.0
+167
+83
+197
+113
2.5
+150
+75
+180
+105
+210
+135
ps
1
2.0
+125
+45
+155
+75
+185
+105
ps
1
1.5
+83
+21
+113
+51
+143
+81
ps
1
1.0
0
0
+30
+30
+60
+60
ps
1
0.9
-11
-14
+19
+16
+49
+46
ps
1
0.8
-25
-31
+5
-1
+35
+29
ps
1
0.7
-43
-54
-13
-24
+17
+6
ps
1
0.6
-67
-83
-37
-53
-7
-23
ps
1
0.5
-110
-125
-80
-95
-50
-65
ps
1
0.4
-175
-188
-145
-158
-115
-128
ps
1
0.3
-285
-292
-255
-262
-225
-232
ps
1
0.25
-350
-375
-320
-345
-290
-315
ps
1
0.2
-525
-500
-495
-470
-465
-440
ps
1
0.15
-800
-708
-770
-678
-740
-648
ps
1
0.1
-1450
-1125
-1420
-1095
-1390
-1065
ps
1
- 35 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
[ Table 5 ] Derating values for DDR2-667, DDR2-800
ΔtIS and ΔtIH Derating Values for DDR2-667, DDR2-800
CK, CK Differential Slew Rate
2.0 V/ns
Command/
Address Slew
rate(V/ns)
1.5 V/ns
1.0 V/ns
Units
NOTE
+154
ps
1
+149
ps
1
+193
+143
ps
1
+180
+135
ps
1
+75
+160
+105
ps
1
+51
+127
+81
ps
1
ΔtIS
ΔtIH
ΔtIS
ΔtIH
ΔtIS
ΔtIH
4.0
+150
+94
+180
+124
+210
3.5
+143
+89
+173
+119
+203
3.0
+133
+83
+163
+113
2.5
+120
+75
+150
+105
2.0
+100
+45
+130
1.5
+67
+21
+97
1.0
0
0
+30
+30
+60
+60
ps
1
0.9
-5
-14
+25
+16
+55
+46
ps
1
0.8
-13
-31
+17
-1
+47
+29
ps
1
0.7
-22
-54
+8
-24
+38
+6
ps
1
0.6
-34
-83
-4
-53
+26
-23
ps
1
0.5
-60
-125
-30
-95
0
-65
ps
1
0.4
-100
-188
-70
-158
-40
-128
ps
1
0.3
-168
-292
-138
-262
-108
-232
ps
1
0.25
-200
-375
-170
-345
-140
-315
ps
1
0.2
-325
-500
-295
-470
-265
-440
ps
1
0.15
-517
-708
-487
-678
-457
-648
ps
1
0.1
-1000
-1125
-970
-1095
-940
-1065
ps
1
For all input signals the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS(base) and tIH(base) value to the ΔtIS
and ΔtIH derating value respectively. Example: tIS (total setup time) = tIS(base) + ΔtIS
Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min.
Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max. If
the actual signal is always earlier than the nominal slew rate line between shaded ’VREF(DC) to ac region’, use nominal slew rate for derating value (see
Figure 15). If the actual signal is later than the nominal slew rate line anywhere between shaded ’VREF(DC) to ac region’, the slew rate of a tangent line to
the actual signal from the ac level to dc level is used for derating value (see Figure 16).
Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC).
Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If
the actual signal is always later than the nominal slewrate line between shaded ’dc to VREF(DC) region’, use nominal slew rate for derating value (see Figure 17). If the actual signal is earlier than the nominal slew rate line anywhere between shaded ’dc to VREF(DC) region’, the slew rate of a tangent line to
the actual signal from the dc level to VREF(DC) level is used for derating value (see Figure 18).
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(AC) at the time of the rising clock
transition) a valid input signal is still required to complete the transition and reach VIH/IL(AC).
For slew rates in between the values listed in Table 4 and Table 5 the derating values may obtained by linear interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
- 36 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
CK
CK
tIS
tIH
tIS
tIH
VDDQ
VIH(AC)min
VREF to ac
region
VIH(DC)min
nominal
slew rate
VREF(DC)
nominal slew
rate
VIL(DC)max
VREF to ac
region
VIL(AC)max
VSS
ΔTF
Setup Slew Rate VREF(DC) - VIL(AC)max
=
Falling Signal
ΔTF
ΔTR
Setup Slew Rate VIH(AC)min - VREF(DC)
Rising Signal =
ΔTR
Figure 15. IIIustration of nominal slew rate for tIS
- 37 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
DQS
DQS
tDH
tDS
VDDQ
tDS
tDH
nominal
line
VIH(AC)min
VREF to ac
region
VIH(DC)min
tangent
line
VREF(DC)
tangent
line
VIL(DC)max
VREF to ac
region
VIL(AC)max
nominal
line
ΔTR
VSS
ΔTF
Setup Slew Rate tangent line[VIH(AC)min - VREF(DC)]
=
Rising Signal
ΔTR
Setup Slew Rate tangent line[VREF(DC) - VIL(AC)max]
Falling Signal =
ΔTF
Figure 16. IIIustration of tangent line for tIS
- 38 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
CK
CK
tIS
tIH
tIS
tIH
VDDQ
VIH(AC)min
VIH(DC)min
dc to VREF
region
nominal
slew rate
VREF(DC)
dc to VREF
region
nominal
slew rate
VIL(DC)max
VIL(AC)max
VSS
ΔTR
Hold Slew Rate VREF(DC) - VIL(DC)max
Rising Signal =
ΔTR
ΔTF
Hold Slew Rate VIH(DC)min - VREF(DC)
=
Falling Signal
ΔTF
Figure 17. IIIustration of nominal slew rate for tIH
- 39 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
CK
CK
tIH
tIS
tIS
tIH
VDDQ
VIH(AC)min
nominal
line
VIH(DC)min
dc to VREF
region
tangent
line
VREF(DC)
VIL(DC)max
dc to VREF
region
tangent
line
nominal
line
VIL(AC)max
VSS
ΔTR
ΔTF
tangent line [ VREF(DC) - VIL(DC)max ]
Hold Slew Rate
Rising Signal =
ΔTR
Hold Slew Rate tangent line [ VIH(DC)min - VREF(DC)]
Falling Signal =
ΔTF
Figure 18. IIIustration of tangent line for tIH
- 40 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
10. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance
(bus turnaround) will degrade accordingly.
11. MIN ( tCL, tCH) refers to the smaller of the actual clock LOW time and the actual clock HIGH time as provided to the device (i.e. this value can be
greater than the minimum specification limits for tCL and tCH). For example, tCL and tCH are = 50% of the period, less the half period jitter ( tJIT(HP))
of the clock source, and less the half period jitter due to crosstalk ( tJIT(crosstalk)) into the clock traces.
12. tQH = tHP - tQHS, where :
tHP = minimum half clock period for any given cycle and is defined by clock HIGH or clock LOW (tCH, tCL).
tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due
to data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers.
13. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output slew rate
mismatch between DQS/ DQS and associated DQ in any given cycle.
14. tDAL = WR + RU{ tRP[ns] / tCK[ns] }, where RU stands for round up.
WR refers to the tWR parameter stored in the MRS. For tRP, if the result of the division is not already an integer, round up to the next highest integer.
tCK refers to the application clock period.
Example: For DDR533 at tCK = 3.75ns with WR programmed to 4 clocks.
tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
15. The clock frequency is allowed to change during self refresh mode or precharge power-down mode.
16. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-400/533, tAOND is 10 ns (= 2 x 5 ns) after
the clock edge that registered a first ODT HIGH if tCK = 5 ns. For DDR2-667/800, tAOND is 2 clock cycles after the clock edge that registered a first
ODT HIGH counting the actual input clock edges.
17. ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-400/533, tAOFD is 12.5 ns (= 2.5 x 5 ns) after the clock edge that registered a first ODT LOW if tCK = 5 ns. For DDR2-667/800, if tCK(avg) = 3 ns is assumed, tAOFD is 1.5 ns (= 0.5 x 3 ns) after the second trailing clock
edge counting from the clock edge that registered a first ODT LOW and by counting the actual input clock edges.
18. tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level which
specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) . Figure 19 shows a method to calculate the point when device is no
longer driving (tHZ), or beginsdriving (tLZ) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as
long as the calculation is consistent. tLZ(DQ) refers to tLZ of the DQS and tLZ(DQS) refers to tLZ of the (U/L/R)DQS and (U/L/R)DQS each treated as
single-ended signal.
19. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving (tRPST),
or begins driving (tRPRE). Figure 19 shows a method to calculate these points when the device is no longer driving (tRPST), or begins driving
(tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consistent.
VOH + x mV
VTT + 2x mV
VOH + 2x mV
VTT + x mV
tLZ
tHZ
tRPST end point
T2
T1
VOL + 2x mV
VTT - x mV
VOL + x mV
VTT - 2x mV
tHZ,tRPST end point = 2*T1-T2
T1
T2
tLZ,tRPRE begin point = 2*T1-T2
Figure 19. Method for calculating transitions and endpoints
- 41 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
20. Input waveform timing tDS with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the VIH(AC) level to the
differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL(AC) level to the differential data strobe crosspoint for
a falling signal applied to the device under test. DQS, DQS signals must be monotonic between VIL(DC)max and VIH(DC)min. See Figure 20.
21. Input waveform timing tDH with differential data strobe enabled MR[bit10]=0, is referenced from the differential data strobe crosspoint to the input signal crossing at the VIH(DC) level for a falling signal and from the differential data strobe crosspoint to the input signal crossing at the VIL(DC) level for
a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL(DC)max and VIH(DC)min. See Figure 20.
DQS
DQS
tDS
tDH
tDS
tDH
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
Figure 20. Differential input waveform timing - tDS and tDH
22. Input waveform timing is referenced from the input signal crossing at the VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the
device under test. See Figure 21.
23. Input waveform timing is referenced from the input signal crossing at the VIL(DC) level for a rising signal and VIH(DC) for a falling signal applied to the
device under test. See Figure 21.
CK
CK
tIS
tIH
tIS
tIH
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
Figure 21. Differential input waveform timing - tIS and tIH
- 42 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
24. tWTR is at lease two clocks (2 x tCK or 2 x nCK) independent of operation frequency.
25. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input signal crossing at the VIH(AC) level to the single-ended data strobe crossing VIH/L(DC) at the start of its transition for a rising signal, and from the input signal crossing at the VIL(AC) level to the
single-ended data strobe crossing VIH/L(DC) at the start of its transition for a falling signal applied to the device under test. The DQS signal must be
monotonic between VIL(DC)max and VIH(DC)min.
26. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input signal crossing at the VIH(DC) level to the
single-ended data strobe crossing VIH/L(AC) at the end of its transition for a rising signal, and from the input signal crossing at the VIL(DC) level to the
single-ended data strobe crossing VIH/L(AC) at the end of its transition for a falling signal applied to the device under test. The DQS signal must be
monotonic between VIL(DC)max and VIH(DC)min.
27. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire
time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of
tIS + 2 x tCK + tIH.
28. If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
29. These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to its respective
clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and
hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should be met whether clock jitter is present or not.
30. These parameters are measured from a data strobe signal ((L/U/R)DQS/DQS) crossing to its respective clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these
parameters should be met whether clock jitter is present or not.
31. These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal ((L/U/
R)DQS/DQS) crossing.
32. For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM / tCK(avg)}, which is in clock
cycles, assuming all input clock jitter specifications are satisfied.
For example, the device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock jitter specifications are met. This means: For
DDR2-667 5-5-5, of which tRP = 15ns, the device will support tnRP = RU{tRP / tCK(avg)} = 5, i.e. as long as the input clock jitter specifications are
met, Precharge command at Tm and Active command at Tm+5 is valid even if (Tm+5 - Tm) is less than 15ns due to input clock jitter.
33. tDAL [nCK] = WR [nCK] + tnRP [nCK] = WR + RU {tRP [ps] / tCK(avg) [ps] }, where WR is the value programmed in the mode register set.
34. New units, ’tCK(avg)’ and ’nCK’, are introduced in DDR2-667 and DDR2-800. Unit ’tCK(avg)’ represents the actual tCK(avg) of the input clock under
operation. Unit ’nCK’ represents one clock cycle of the input clock, counting the actual clock edges.
Note that in DDR2-400 and DDR2-533, ’tCK’ is used for both concepts.
ex) tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may be registered at Tm+2, even if (Tm+2 - Tm) is 2 x tCK(avg)
+ tERR(2per),min.
35. Input clock jitter spec parameter. These parameters and the ones in the table below are referred to as 'input clock jitter spec parameters' and these
parameters apply to DDR2-667 and DDR2-800 only. The jitter specified is a random jitter meeting a Gaussian distribution.
Parameter
Clock period jitter
Clock period jitter during DLL locking period
Cycle to cycle clock period jitter
DDR2-667
Symbol
DDR2-800
units
NOTE
100
ps
35
-80
80
ps
35
-200
200
ps
35
Min
Max
Min
Max
-125
125
-100
tJIT(per,lck)
-100
100
tJIT(cc)
-250
250
tJIT(per)
Cycle to cycle clock period jitter during DLL locking period
tJIT(cc,lck)
-200
200
-160
160
ps
35
Cumulative error across 2 cycles
tERR(2per)
-175
175
-150
150
ps
35
Cumulative error across 3 cycles
tERR(3per)
-225
225
-175
175
ps
35
Cumulative error across 4 cycles
tERR(4per)
-250
250
-200
200
ps
35
Cumulative error across 5 cycles
tERR(5per)
-250
250
-200
200
ps
35
Cumulative error across n cycles, n = 6 ... 10, inclusive
tERR(6-10per)
-350
350
-300
300
ps
35
Cumulative error across n cycles, n = 11 ... 50, inclusive
tERR(11-50per)
-450
450
-450
450
ps
35
tJIT(duty)
-125
125
-100
100
ps
35
Duty cycle jitter
- 43 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
Definitions :
- tCK(avg)
tCK(avg) is calculated as the average clock period across any consecutive 200 cycle window.
N
tCK(avg) =
where
∑
tCKj
/N
j=1
N = 200
- tCH(avg) and tCL(avg)
tCH(avg) is defined as the average HIGH pulse width, as calculated across any consecutive 200 HIGH pulses.
N
tCH(avg) =
where
∑
tCHj
/(N x tCK(avg))
j=1
N = 200
tCL(avg) is defined as the average LOW pulse width, as calculated across any consecutive 200 LOW pulses.
N
tCL(avg) =
where
∑
tCLj
/(N x tCK(avg))
j=1
N = 200
- tJIT(duty)
tJIT(duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of any single tCH from tCH(avg). tCL jitter is the
largest deviation of any single tCL from tCL(avg).
tJIT(duty) = Min/max of {tJIT(CH), tJIT(CL)}
where,
tJIT(CH) = {tCHi- tCH(avg) where i=1 to 200}
tJIT(CL) = {tCLi- tCL(avg) where i=1 to 200}
- tJIT(per), tJIT(per,lck)
tJIT(per) is defined as the largest deviation of any single tCK from tCK(avg).
tJIT(per) = Min/max of {tCKi- tCK(avg) where i=1 to 200}
tJIT(per) defines the single period jitter when the DLL is already locked.
tJIT(per,lck) uses the same definition for single period jitter, during the DLL locking period only.
tJIT(per) and tJIT(per,lck) are not guaranteed through final production testing.
- tJIT(cc), tJIT(cc,lck)
tJIT(cc) is defined as the difference in clock period between two consecutive clock cycles : tJIT(cc) = Max of |tCKi+1 - tCKi|
tJIT(cc) defines the cycle to cycle jitter when the DLL is already locked.
tJIT(cc,lck) uses the same definition for cycle to cycle jitter, during the DLL locking period only.
tJIT(cc) and tJIT(cc,lck) are not guaranteed through final production testing.
- tERR(2per), tERR (3per), tERR (4per), tERR (5per), tERR (6-10per) and tERR (11-50per)
tERR is defined as the cumulative error across multiple consecutive cycles from tCK(avg).
i+n-1
tERR(nper) =
∑
tCKj
- n x tCK(avg)
j=1
where
n=2
n=3
n=4
n=5
for
for
for
for
tERR(2per)
tERR(3per)
tERR(4per)
tERR(5per)
6 ≤ n ≤ 10
for
tERR(6-10per)
11 ≤ n ≤ 50
for
tERR(11-50per)
- 44 -
K4T1G044QE
K4T1G084QE
K4T1G164QE
Rev. 1.11
datasheet
DDR2 SDRAM
36. These parameters are specified per their average values, however it is understood that the following relationship between the average timing and the
absolute instantaneous timing holds at all times. (Min and max of SPEC values are to be used for calculations in the table below.)
Symbol
Min
Max
Units
Absolute clock Period
Parameter
tCK(abs)
tCK(avg)min + tJIT(per)min
tCK(avg)max + tJIT(per)max
ps
Absolute clock HIGH pulse width
tCH(abs)
tCH(avg)min x tCK(avg)min +
tJIT(duty)min
tCH(avg)max x tCK(avg)max +
tJIT(duty)max
ps
Absolute clock LOW pulse width
tCL(abs)
tCL(avg)min x tCK(avg)min +
tJIT(duty)min
tCL(avg)max x tCK(avg)max +
tJIT(duty)max
ps
Example: For DDR2-667, tCH(abs),min = ( 0.48 x 3000 ps ) - 125 ps = 1315 ps
37. tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter. It is used
in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the following equation;
tHP = Min ( tCH(abs), tCL(abs) ),
where,
tCH(abs) is the minimum of the actual instantaneous clock HIGH time;
tCL(abs) is the minimum of the actual instantaneous clock LOW time;
38. tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is transferred to the output; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are independent of
each other, due to data pin skew, output pattern effects, and p-channel to n-channel variation of the output drivers
39. tQH = tHP - tQHS, where:
tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under the max column.
{The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}
Examples:
1) If the system provides tHP of 1315 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 975 ps minimum.
2) If the system provides tHP of 1420 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 1080 ps minimum.
40. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per)min = - 272 ps and tERR(6-10per)max = + 293 ps, then tDQSCKmin(derated) = tDQSCKmin - tERR(6-10per)max = - 400 ps - 293 ps = - 693 ps and tDQSCKmax(derated) = tDQSCKmax - tERR(6-10per)min = 400
ps + 272 ps = + 672 ps. Similarly, tLZ(DQ) for DDR2-667 derates to tLZ(DQ)min(derated) = - 900 ps - 293 ps = - 1193 ps and tLZ(DQ)max(derated) =
450 ps + 272 ps = + 722 ps.
41. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per) of the input clock. (output deratings are
relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(per)min = - 72 ps and tJIT(per)max = + 93 ps, then tRPREmin(derated) =
tRPREmin + tJIT(per)min = 0.9 x tCK(avg) - 72 ps = + 2178 ps and tRPREmax(derated) = tRPREmax + tJIT(per)max = 1.1 x tCK(avg) + 93 ps = +
2843 ps.
42. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(duty) of the input clock. (output deratings are
relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(duty),min = - 72 ps and tJIT(duty)max = + 93 ps, then tRPSTmin(derated) =
tRPSTmin + tJIT(duty)min = 0.4 x tCK(avg) - 72 ps = + 928 ps and tRPSTmax(derated) = tRPSTmax + tJIT(duty)max = 0.6 x tCK(avg) + 93 ps = +
1592 ps.
43. When the device is operated with input clock jitter, this parameter needs to be derated by { - tJIT(duty)max - tERR(6-10per)max } and { - tJIT(duty)min
- tERR(6-10per)min } of the actual input clock. (output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per)min = - 272 ps, tERR(6- 10per)max = + 293 ps, tJIT(duty)min = - 106
ps and tJIT(duty)max = + 94 ps, then tAOFmin(derated) = tAOFmin + { - tJIT(duty)max - tERR(6-10per)max } = - 450 ps + { - 94 ps - 293 ps} = - 837
ps and tAOFmax(derated) = tAOFmax + { - tJIT(duty)min - tERR(6-10per)min } = 1050 ps + { 106 ps + 272 ps } = + 1428 ps.
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K4T1G044QE
K4T1G084QE
K4T1G164QE
datasheet
Rev. 1.11
DDR2 SDRAM
44. For tAOFD of DDR2-400/533, the 1/2 clock of tCK in the 2.5 x tCK assumes a tCH, input clock HIGH pulse width of 0.5 relative to tCK. tAOF,min and
tAOF,max should each be derated by the same amount as the actual amount of tCH offset present at the DRAM input with respect to 0.5.
For example, if an input clock has a worst case tCH of 0.45, the tAOFmin should be derated by subtracting 0.05 x tCK from it, whereas if an input clock
has a worst case tCH of 0.55, the tAOFmax should be derated by adding 0.05 x tCK to it. Therefore, we have;
tAOFmin(derated) = tAC,min - [0.5 - Min(0.5, tCHmin)] x tCK
tAOFmax(derated) = tAC,max + 0.6 + [Max(0.5, tCHmax) - 0.5] x tCK
or
tAOFmin(derated) = Min(tACmin, tACmin - [0.5 - tCHmin] x tCK)
tAOFmax(derated) = 0.6 + Max(tACmax, tACmax + [tCHmax - 0.5] x tCK)
where tCHmin and tCHmax are the minimum and maximum of tCH actually measured at the DRAM input balls.
45. For tAOFD of DDR2-667/800, the 1/2 clock of nCK in the 2.5 x nCK assumes a tCH(avg), average input clock HIGH pulse width of 0.5 relative to
tCK(avg). tAOFmin and tAOFmax should each be derated by the same amount as the actual amount of tCH(avg) offset present at the DRAM input
with respect to 0.5.
For example, if an input clock has a worst case tCH(avg) of 0.48, the tAOFmin should be derated by subtracting 0.02 x tCK(avg) from it, whereas if an
input clock has a worst case tCH(avg) of 0.52, the tAOFmax should be derated by adding 0.02 x tCK(avg) to it. Therefore, we have;
tAOFmin(derated) = tACmin - [0.5 - Min(0.5, tCH(avg)min)] x tCK(avg)
tAOFmax(derated) = tACmax + 0.6 + [Max(0.5, tCH(avg)max) - 0.5] x tCK(avg)
tAOFmin(derated) = Min(tACmin, tACmin - [0.5 - tCH(avg)min] x tCK(avg))
tAOFmax(derated) = 0.6 + Max(tACmax, tACmax + [tCH(avg)max - 0.5] x tCK(avg))
where tCH(avg),min and tCH(avg),max are the minimum and maximum of tCH(avg) actually measured at the DRAM input balls.
NOTE : Tthat these deratings are in addition to the tAOF derating per input clock jitter, i.e. tJIT(duty) and tERR(6-10per). However tAC values used in the equations shown
above are from the timing parameter table and are not derated. Thus the final derated values for tAOF are;
tAOFmin(derated_final) = tAOFmin(derated) + { - tJIT(duty)max - tERR(6-10per)max }
tAOFmax(derated_final) = tAOFmax(derated) + { - tJIT(duty)min - tERR(6-10per)min }
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