2SB1215/2SD1815 Ordering number : EN2539C SANYO Semiconductors DATA SHEET 2SB1215/2SD1815 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features • • • • Excllent linearity of hFE Low collector-to-emitter saturation voltage Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • Fast switching time High fT Specifications ( ): 2SB1215 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)120 V Collector-to-Emitter Voltage VCEO (--)100 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)3 A Collector Current (Pulse) ICP (--)6 A Continued on next page. Package Dimensions unit : mm (typ.) Package Dimensions unit : mm (typ.) 7518-003 7003-003 0.6 1 2 2.3 1 1 : Base 2 : Collector 3 : Emitter 4 : Collector 3 2.3 2 1.2 0.5 0.85 2SB1215S-TL-E 2SB1215S-TL-H 2SB1215T-TL-E 2SB1215T-TL-H 2SD1815S-TL-E 2SD1815S-TL-H 2SD1815T-TL-E 2SD1815T-TL-H 3 0 to 0.2 0.6 0.5 0.5 1.5 5.5 4 2.5 1.2 7.5 0.8 1.6 0.85 0.7 2.3 6.5 5.0 0.8 1.5 7.0 5.5 4 2SB1215S-E 2SB1215S-H 2SB1215T-E 2SB1215T-H 2SD1815S-E 2SD1815S-H 2SD1815T-E 2SD1815T-H 0.5 7.0 2.3 6.5 5.0 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA SANYO : TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251, SOT-553, DPAK • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252, SOT-428, DPAK • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection 2,4 B1215 D1815 3 RANK LOT No. 2,4 RANK 3 LOT No. TL 2SB1215 1 2SD1815 1 http://semicon.sanyo.com/en/network 50212 TKIM/N2503TN (KT)/92098HA (KT)/40196TS (KOTO) 8-9913/8229MO/4097TA, TS No. 2539-1/10 2SB1215/2SD1815 Continued from preceding page. Parameter Symbol Conditions Ratings Unit 1 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C W 20 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time typ. Unit max. VCB=(--)100V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)0.5A hFE2 VCE=(--)5V, IC=(--)2A fT Cob VCE=(--)10V, IC=(--)0.5A (130)180 VCB=(--)10V, f=1MHz IC=(--)1.5A, IB=(--)0.15A (40)25 V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage min. ICBO IEBO hFE1 VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions 70* (--)1 μA (--)1 μA 400* 40 MHz pF (--200)150 (--500)400 (--)0.9 (--)1.2 mV VCE=(--)1.5A, IC=(--)0.15A IC=(--)10μA, IE=0A (--)120 V IC=(--)1mA, RBE=∞ (--)100 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)6 tstg tf See specified Test Circuit. V V 100 ns (800)900 ns 50 ns * : The 2SB1215/2SD1815 are classified by 100mA hFE as follows : Rank Q R S T hFE 70 to 140 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20Ms D.C.b1% OUTPUT IB2 INPUT VR RB 507 + 100MF VBE= --5V + 470MF VCC=50V IC=10IB1= --10IB2=1.5A For PNP, the polarity is reversed. Ordering Information Package Shipping memo 2SB1215S-E Device TP 500pcs./bag Pb Free 2SB1215S-H TP 500pcs./bag Pb Free and Halogen Free 2SB1215T-E TP 500pcs./bag Pb Free 2SB1215T-H TP 500pcs./bag Pb Free and Halogen Free 2SD1815S-E TP 500pcs./bag Pb Free 2SD1815S-H TP 500pcs./bag Pb Free and Halogen Free 2SD1815T-E TP 500pcs./bag Pb Free 2SD1815T-H TP 500pcs./bag Pb Free and Halogen Free 2SB1215S-TL-E TP-FA 700pcs./reel Pb Free 2SB1215S-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SB1215T-TL-E TP-FA 700pcs./reel Pb Free 2SB1215T-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SD1815S-TL-E TP-FA 700pcs./reel Pb Free 2SD1815S-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free 2SD1815T-TL-E TP-FA 700pcs./reel Pb Free 2SD1815T-TL-H TP-FA 700pcs./reel Pb Free and Halogen Free No. 2539-2/10 2SB1215/2SD1815 IC -- VCE m 18 A 2SD1815 --10mA -- --1 6 m Collector Current, IC -- A --1.6 A m 0 A --2 --8mA --1.2 --6mA --4mA --0.8 --2mA --0.4 IB=0 0 --1 --2 --3 --4 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A --0.8 A --2.5m --0.6 --2.0mA --1.5mA --0.4 --1.0mA --0.2 0 --20 --30 6mA 0.8 4mA 2mA 0.4 IB=0 0 1 --40 2SD1815 A 4.0mA 3.5mA 3.0mA 0.6 2.5mA 2.0mA 0.4 1.5mA 1.0mA 0.2 IB=0 0 10 30 40 50 IC -- VBE 2SD1815 VCE=5V 3.0 2.5 2.0 C 1.5 Ta=75 ° --1.0 20 3.5 --0.5 1.0 0.5 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 --1.2 Ta=75°C 25°C 2 --25°C 5 3 2 5 --0.1 2 3 5 --1.0 Collector Current, IC -- A 2 3 5 --10 ITR09239 Ta=75°C 25°C --25°C 100 7 5 3 2 7 5 3 1.2 ITR09238 2SD1815 VCE=5V 2 5 2 1.0 5 10 --0.01 0.8 7 10 5 0.6 hFE -- IC 3 100 0.4 1000 DC Current Gain, hFE 3 0.2 Base-to-Emitter Voltage, VBE -- V 2SB1215 VCE= --5V 5 0 ITR09237 hFE -- IC 1000 DC Current Gain, hFE ITR09234 Collector-to-Emitter Voltage, VCE -- V ITR09236 Collector Current, IC -- A --2.0 Ta=7 5°C 25°C --25°C Collector Current, IC -- A --2.5 0 5 4.5m 0.8 0 --50 2SB1215 VCE= --5V --1.5 4 0.5mA IC -- VBE --3.0 3 IC -- VCE Collector-to-Emitter Voltage, VCE -- V ITR09235 --3.5 2 A 5.0m IB=0 --10 8mA 1.2 1.0 --0.5mA 0 14 Collector-to-Emitter Voltage, VCE -- V 2SB1215 mA --4.0 mA --3.5 A --3.0m 12mA 10mA 6 mA 1 ITR09233 IC -- VCE --1.0 A 20mA 8m 1 mA 1.6 0 --5 Collector Current, IC -- A 0 IC -- VCE 2.0 --14mA --12mA 25°C --25°C 2SB1215 Collector Current, IC -- A --2.0 5 0.01 2 3 5 0.1 2 3 5 1.0 Collector Current, IC -- A 2 3 5 10 ITR09240 No. 2539-3/10 2SB1215/2SD1815 f T -- IC 3 2SB1215 / 2SD1815 f=1MHz 2SD1815 2SB1215 2 100 7 5 3 2 100 7 5 2SB 121 5 2SD 181 5 3 2 10 7 For PNP, the minus sign is omitted. 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 --1000 5 3 2 --100 25°C Ta=75°C 3 --25°C 2 5 --0.01 2 5 2 --0.1 3 5 2 --1.0 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 3 2 25°C Ta= --25°C 7 5 5 75°C 7 100 2 ITR09242 1000 7 5 3 2 100 7 5 25°C 3 Ta=75°C --25°C 5 0.01 2 3 5 2 0.1 3 5 2 1.0 Collector Current, IC -- A VBE(sat) -- IC 3 5 10 ITR09244 2SD1815 IC / IB=10 5 3 2 1.0 25°C Ta= --25°C 7 75°C 5 3 3 5 --0.01 2 3 5 2 --0.1 3 5 2 --1.0 Collector Current, IC -- A 3 2 5 Ta = 0.1 ) °C 25 25 °C ) c= (T n( s tio 3 2 ion era m 100 op s 1m 0ms 1 t era op DC 5 DC 1.0 5 3 2 Tc=25°C Single pulse For PNP, the minus sign is omitted. 0.01 5 2 3 3 5 2 0.1 3 5 1.0 2 3 5 10 3 5 Collector-to-Emitter Voltage, VCE -- V 2 100 ITR09247 1.0 2 3 5 ITR09246 2SB1215 / 2SD1815 1.0 0.8 Id ea lh ea 0.6 td iss ip ati on 0.4 0.2 0 2 5 PC -- Ta 2SB1215 / 2SD1815 IC 3 2 2 1.2 ICP 5 0.01 Collector Current, IC -- A ASO 10 5 ITR09245 Collector Dissipation, PC -- W 2 3 7 5 --1.0 2 10 2SD1815 IC / IB=10 10 2SB1215 IC / IB=10 7 2 --10 ITR09243 VBE(sat) -- IC --10 5 3 10 5 Collector Current, IC -- A 3 VCE(sat) -- IC 2 3 2 Collector-to-Base Voltage, VCB -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V --10 7 1.0 5 2SB1215 IC / IB=10 5 5 ITR09241 VCE(sat) -- IC 5 For PNP, the minus sign is omitted. 5 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 10 Collector Current, IC -- A Cob -- VCB 2 2SB1215 / 2SD1815 VCE=10V Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 5 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR09248 No. 2539-4/10 2SB1215/2SD1815 PC -- Tc 24 Collector Dissipation, PC -- W 2SB1215 / 2SD1815 20 16 12 8 4 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 ITR09249 No. 2539-5/10 2SB1215/2SD1815 Taping Specification 2SB1215S-TL-E, 2SB1215S-TL-H, 2SB1215T-TL-E2SB1215T-TL-H, 2SD1815S-TL-E, 2SD1815S-TL-H, 2SD1815T-TL-E, 2SD1815T-TL-H No. 2539-6/10 2SB1215/2SD1815 Outline Drawing Land Pattern Example 2SB1215S-TL-E, 2SB1215S-TL-H, 2SB1215T-TL-E2SB1215T-TL-H, 2SD1815S-TL-E, 2SD1815S-TL-H, 2SD1815T-TL-E, 2SD1815T-TL-H Mass (g) Unit 0.282 mm Unit: mm * For reference 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No. 2539-7/10 2SB1215/2SD1815 Bag Packing Specification 2SB1215S-E, 2SB1215S-H, 2SB1215T-E2SB1215T-H, 2SD1815S-E, 2SD1815S-H, 2SD1815T-E, 2SD1815T-H No. 2539-8/10 2SB1215/2SD1815 Outline Drawing 2SB1215S-E, 2SB1215S-H, 2SB1215T-E2SB1215T-H, 2SD1815S-E, 2SD1815S-H, 2SD1815T-E, 2SD1815T-H Mass (g) Unit 0.315 mm * For reference No. 2539-9/10 2SB1215/2SD1815 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2012. Specifications and information herein are subject to change without notice. PS No. 2539-10/10