SANYO 2SC5245A

2SC5245A
Ordering number : ENA1074A
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SC5245A
UHF to S-Band Low-Noise Amplifier
OSC Applications
Features
•
•
•
•
Low-noise
: NF=0.9dB typ (f=1GHz)
: NF=1.4dB typ (f=1.5GHz)
High gain
: ⏐S21e⏐2=10dB typ (f=1.5GHz)
High cut-off frequency : fT=8GHz typ
Low-voltage, low-current operation (VCE=1V, IC=1mA)
: fT=3.5GHz typ
: ⏐S21e⏐2=5.5dB typ (f=1.5GHz)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCEO
20
V
10
V
VEBO
IC
1.5
V
30
mA
PC
Tj
150
mW
Junction Temperature
Storage Temperature
Tstg
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7023A-009
• Package
: MCP
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
2SC5245A-4-TL-E
0.2
0.15
3
0.9
Packing Type: TL
1.25
0 to 0.08
Marking
LOT No.
MN
1
2
0.65
R
A
N
K
LOT No.
TL
0.3
Electrical Connection
0.3
0.425
2.1
0.425
2.0
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
3
1
2
http://semicon.sanyo.com/en/network
71812 TKIM/O2908AB MSIM TC-00001685 No. A1074-1/8
2SC5245A
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
VCB=10V, IE=0A
VEB=1V, IC=0A
hFE
fT1
VCE=5V, IC=10mA
VCE=5V, IC=10mA
fT2
VCE=1V, IC=1mA
Output Capacitance
Cob
Reverse Transfer Capacitance
Cre
Forward Transfer Gain
Noise Figure
Ratings
Conditions
min
typ
Unit
max
60*
1.0
μA
10
μA
270*
5
8
GHz
3.5
GHz
0.45
VCB=10V, f=1MHz
0.7
pF
0.30
pF
10
dB
2
⏐S21e⏐ 1
VCE=5V, IC=10mA, f=1.5GHz
2
⏐S21e⏐ 2
VCE=1V, IC=1mA, f=1.5GHz
5.5
NF1
VCE=5V, IC=5mA, f=1.5GHz
1.4
NF2
VCE=2V, IC=3mA, f=1GHz
0.9
8
dB
3.0
dB
dB
* : The 2SC5245A is classified by 10mA hFE as follows :
Rank
hFE
3
60 to 120
4
90 to 180
5
135 to 270
Ordering Information
Device
Package
Shipping
memo
MCP
3,000pcs./reel
Pb Free
2SC5245A-4-TL-E
hFE -- IC
5
Gain-Bandwidth Product, fT -- GHz
3
DC Current Gain, hFE
2
100
7
5
3
2
10
fT -- IC
2
VCE=5V
10
=5V
VCE
=1V
VCE
7
5
3
2
7
5
0.1
1.0
2
3
5
7 1.0
2
3
5 7 10
Collector Current, IC -- mA
2
3
5 7 100
ITR07984
1.0
2
3
5
7
10
Collector Current, IC -- mA
2
3
5
IT14098
No. A1074-2/8
2SC5245A
Cob -- VCB
5
Reverse Transfer Capacitance, Cre -- pF
Output Capacitance, Cre -- pF
3
2
1.0
7
5
3
2
0.1
7
5
7 0.1
5
3
2
7 1.0
5
3
2
7 10
3
2
Collector-to-Base Voltage, VCB -- V
f=1MHz
3
2
1.0
7
5
3
2
0.1
7
5
5
7 0.1
5
3
2
7 1.0
5
3
2
7 10
VCE=2V
f=1GHz
10
Noise Figure, NF -- dB
10
8
1V
VC
E=5V
6
4
V
CE =
Noise Figure, NF -- dB
5
ITR07987
NF -- IC
12
f=1.5GHz
2
8
6
4
2
0
0.1
2
3
5
7 1.0
2
3
7 10
5
2
Collector Current, IC -- mA
⏐S21e⏐2 -- I
3
0
1.0
5
2
3
5
7 1.0
2
3
5
7
2
10
Collector Current, IC -- mA
⏐S21e⏐2 -- I
ITR07990
C
16
f=1GHz
Forward Transfer Gain,⏐S21e⏐2 -- dB
2V
1V
8
6
4
2
12
2V
1V
=5V
V CE
10
14
=5V
VCE
12
5
C
16
14
3
ITR07991
f=1.5GHz
Forward Transfer Gain,⏐S21e⏐2 -- dB
3
2
Collector-to-Base Voltage, VCB -- V
ITR07986
NF -- IC
12
Cre -- VCB
5
f=1MHz
10
8
6
4
2
0
0
3
5
7 1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
ITR07988
PC -- Ta
160
3
5
7
1.0
2
3
5
7
10
2
Collector Current, IC -- mA
3
5
7 100
ITR07989
Collector Dissipation, PC -- mW
150
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR07992
No. A1074-3/8
2SC5245A
S11e
f=200MHz to 2000MHz(200MHz Step)
S21e
f=200MHz to 2000MHz(200MHz Step)
90°
j50
j100
VC =
E 5
IC =10 V
mA
j150
j200
j250
j10
0.2
G
0.2 Hz
GH
z
--j10
25 2.0GHz
50 100
150 250
.0
2 GHz
z
VCE=5V
2.0GH
IC=5mA
0.2GHz
z
--j250
H
0.2G
Hz
G
--j200
2.0
V
C
--j150
IC E =1
=1 V
2V
mA
V CE= --j100
A
--j25
I C=3m
10
V
=5 A
E
V C =10m
IC
0
60°
120°
j25
150° 0.2GHz
VCE=5V
IC=5mA 0.2GHz
2.0GHz
2.0GHz
V
2
=
0.2GHz
2.0GHz
V CE
A
8
2.0GHz 4
±180° I C=3m =1V
V CE
0.2GHz
A
m
1
I C=
16 20
0
--30°
--60°
--120°
--90°
ITR07993
ITR07994
S22e
f=200MHz to 2000MHz(200MHz Step)
90°
j50
60°
120°
2.0GHz
2.0GHz
VCE=5V
2.0GHz
IC=5mA
2.0GHz
VCE=5V
30°
IC=10mA
VCE=2V VCE=1V
0.2GHz
0.2GHz
IC=3mA IC=1mA
0.2GHz 0.2GHz
150°
12
--150°
--j50
S12e
f=200MHz to 2000MHz(200MHz Step)
30°
0.04 0.08 0.12 0.16 0.2
±180°
0
j25
j150
j200
j250
j10
0
10
--j10
--30°
--150°
j100
--j25
25
150
250
CE=5V
IC=10mA 0.2GHz
0.2GHz
0.2GHz
0.2GHz
2.0GHz
z
2.0GH
--j250
--j200
2.0GHz
z
=1V
2.0GH
VCE mA --j150
1
VCE=5V V =2V I C=
CE
--j100
IC=5mA I =3mA
C
50
100 V
--60°
--120°
--90°
ITR07995
--j50
ITR07996
No. A1074-4/8
2SC5245A
S Parameters (Common emitter)
VCE=5V, IC=5mA, ZO=50Ω
Freq(MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐S11⏐
0.763
0.590
0.456
0.374
0.323
0.288
0.264
0.248
0.239
0.235
∠S11
-37.5
-65.4
-85.5
-102.0
-115.0
-127.5
-137.7
-147.4
-156.9
-165.7
⏐S21⏐
11.926
9.202
7.173
5.743
4.785
4.105
3.599
3.213
2.905
2.651
∠S21
146.9
124.3
109.4
98.7
90.5
83.6
77.5
71.3
66.4
61.3
⏐S12⏐
0.036
0.058
0.073
0.086
0.098
0.110
0.123
0.136
0.150
0.165
∠S12
70.7
60.9
57.4
56.7
56.7
57.2
57.7
57.6
57.6
57.2
⏐S22⏐
0.892
0.740
0.631
0.566
0.528
0.505
0.488
0.476
0.466
0.462
∠S22
-19.1
-29.1
-33.7
-35.8
-37.2
-38.4
-39.6
-41.2
-43.3
-45.4
∠S11
-52.6
-84.6
-106.3
-124.6
-136.5
-148.9
-158.3
-167.3
-175.6
-177.5
⏐S21⏐
16.354
11.011
8.026
6.250
5.115
4.336
3.813
3.365
3.030
2.754
∠S21
136.2
113.3
100.5
91.3
84.7
78.8
73.4
68.1
63.5
58.9
⏐S12⏐
0.031
0.048
0.062
0.076
0.090
0.104
0.119
0.135
0.150
0.166
∠S12
67.5
62.4
62.2
63.4
64.3
64.4
64.5
63.8
63.1
62.5
⏐S22⏐
0.804
0.622
0.533
0.491
0.469
0.458
0.449
0.443
0.436
0.438
∠S22
-23.9
-30.5
-32.0
-32.4
-33.2
-34.6
-35.8
-37.7
-39.6
-41.9
∠S11
-30.7
-56.3
-76.1
-93.1
-106.3
-119.6
-130.2
-140.5
-150.0
-160.0
⏐S21⏐
8.491
7.161
5.879
4.882
4.154
3.597
3.212
2.875
2.604
2.383
∠S21
153.0
131.9
116.3
104.2
95.0
87.1
80.2
73.4
67.7
62.1
⏐S12⏐
0.044
0.075
0.095
0.109
0.121
0.132
0.143
0.154
0.166
0.179
∠S12
72.5
60.9
54.1
51.0
49.3
48.7
48.6
48.7
48.6
48.9
⏐S22⏐
0.931
0.808
0.696
0.615
0.564
0.526
0.496
0.475
0.461
0.451
∠S22
-17.1
-28.8
-36.2
-40.6
-43.5
-45.8
-47.5
-49.6
-51.6
-52.9
∠S11
-18.9
-37.3
-53.6
-69.4
-82.5
-95.8
-106.1
-117.2
-127.5
-137.9
⏐S21⏐
3.296
3.206
2.942
2.711
2.449
2.252
2.061
1.909
1.766
1.658
∠S21
162.5
145.9
131.2
117.8
107.0
96.9
88.1
79.5
72.2
65.2
⏐S12⏐
0.054
0.102
0.139
0.166
0.187
0.199
0.207
0.212
0.215
0.217
∠S12
77.2
65.9
56.3
48.6
42.5
37.3
33.5
30.6
28.6
27.6
⏐S22⏐
0.980
0.934
0.870
0.811
0.763
0.715
0.673
0.638
0.611
0.592
∠S22
-11.0
-20.5
-29.0
-35.5
-40.9
-45.7
-49.4
-53.4
-56.5
-59.9
VCE=5V, IC=10mA, ZO=50Ω
Freq(MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐S11⏐
0.605
0.417
0.319
0.266
0.238
0.225
0.215
0.213
0.212
0.216
VCE=2V, IC=3mA, ZO=50Ω
Freq(MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐S11⏐
0.842
0.704
0.579
0.480
0.417
0.376
0.343
0.319
0.303
0.298
VCE=1V, IC=1mA, ZO=50Ω
Freq(MHz)
200
400
600
800
1000
1200
1400
1600
1800
2000
⏐S11⏐
0.945
0.884
0.810
0.728
0.667
0.605
0.561
0.518
0.492
0.465
No. A1074-5/8
2SC5245A
Embossed Taping Specification
2SC5245A-4-TL-E
No. A1074-6/8
2SC5245A
Outline Drawing
2SC5245A-4-TL-E
Land Pattern Example
Mass (g) Unit
0.006 mm
* For reference
Unit: mm
2.1
1.0
0.7
0.65 0.65
No. A1074-7/8
2SC5245A
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of July, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1074-8/8