SANYO LE24512AQF

Ordering number : ENA2087
CMOS IC
LE24512AQF
Two Wire Serial Interface
EEPROM (512k EEPROM)
Overview
The LE24512AQF (hereinafter referred to as “this device”) is a two-wire serial interface EEPROM (Electrically Erasable
and Programmable ROM). This device realizes high speed and a high level reliability by SANYO’s high performance
CMOS EEPROM technology. This device is compatible with I2C memory protocol, therefore it is best suited for
application that requires re-writable nonvolatile parameter memory.
Functions
• Capacity: 512k bits (64k × 8 bits)
• Single supply voltage: 1.7V to 3.6V
• Operating temperature: -40 to +85ºC
• Interface: Two wire serial interface (I2C Bus*)
• Operating clock frequency: 400kHz
• Low power consumption
: Standby: 2μA (max)
: Active (Read): 0.5mA (max)
• Automatic page write mode: 128 Bytes
• Read mode: Sequential read and random read
• Erase/Write cycles: 106 cycles (Page write)
• Data Retention: 20 years
• High reliability: Adopts SANYO’s proprietary symmetric memory array configuration (USP6947325)
Noise filters connected to SCL and SDA pins
Incorporates a feature to prohibit write operations under low voltage conditions.
• Package : VSON8K(3.0 × 2.0)
* I2C Bus is a trademark of Philips Corporation.
* This product is licensed from Silicon Storage Technology, Inc. (USA), and manufactured and sold by
SANYO Semiconductor Co., Ltd.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system,
safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives
in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any
guarantee thereof. If you should intend to use our products for new introduction or other application different
from current conditions on the usage of automotive device, communication device, office equipment, industrial
equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the
intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely
responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
62712 SY 20120611-S00001 No.A2087-1/14
LE24512AQF
Package Dimensions
unit : mm (typ)
3437
TOP VIEW
SIDE VIEW
BOTTOM VIEW
2.0
8
0.4
(1.6)
3.0
(1.5)
1
2
2
1
(0.25)
0.5
0.8 MAX
0.25
0.05 MAX
(0.75)
SIDE VIEW
SANYO : VSON8K(3.0X2.0)
Pin Assignment
S0
Pin Descriptions
1
2
S1
VDD
8
WP
7
S2
3
6
SCL
GND
4
5
SDA
PIN.1
S0
Slave Device Address 0
PIN.2
S1
Slave Device Address 1
PIN.3
S2
Slave Device Address 2
PIN.4
GND
Ground
PIN.5
SDA
Serial data input/output
PIN.6
SCL
Serial clock input
PIN.7
WP
Write protect pin
PIN.8
VDD
Power supply
<Top view>
Block Diagram
I/O Buffer
SDA
X decoder
S2
SCL
Address generator
S1
Serial controller
S0
Condition detector
WP
Input Buffer
Write controller
High voltage generator
EEPROM Array
Y decoder & Sense AMP
Serial-Parallel converter
No.A2087-2/14
LE24512AQF
Specifications
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Ratings
Supply voltage
DC input voltage
Over-shoot voltage
Storage temperature
Below 20ns
Tstg
unit
-0.5 to +4.6
V
-0.5 to VDD+0.5
V
-1.0 to VDD+1.0
V
-65 to +150
°C
Note: If an electrical stress exceeding the maximum rating is applied, the device may be damaged.
Operating Conditions
Parameter
Symbol
Conditions
Ratings
Operating supply voltage
Operating temperature
unit
1.7 to 3.6
V
-40 to +85
°C
DC Electrical Characteristics
Spec.
Parameter
Symbol
Conditions
unit
min
typ
max
Supply current at reading
ICC1
f=400kHz, VDD =VDD max
Supply current at writing
ICC2
Standby current
ISB
Input leakage current (SCL)
ILI
VIN=GND to VDD, VDD =VDD max
-2.0
+2.0
μA
Output leakage current (SDA)
ILO
VOUT=GND to VDD, VDD =VDD max
-2.0
+2.0
μA
Input low voltage
VIL
VDD*0.3
V
Input high voltage
VIH
Output low voltage
VOL
0.5
mA
f=400kHz, tWC=5ms, VDD =VDD max
5
mA
VIN =VDD or GND
2
μA
VDD*0.7
V
IOL=0.7mA, VDD=1.7V
0.2
V
IOL=1.0mA, VDD=1.7V
0.4
V
IOL=2.0mA, VDD=2.5V
0.4
V
Capacitance/Ta=25°C, f=1MHz
Parameter
Symbol
Conditions
max
unit
In/Output pin capacitance
CI/O
VI/O=0V (SDA)
10
pF
Input pin capacitance
CI
VIN=0V (other than SDA)
10
pF
Note: This parameter is sampled and not 100% tested.
AC Electric Characteristics
Input pulse level
0.1×VDD to 0.9×VDD
Input pulse rise / fall time
20ns
Output detection voltage
0.5×VDD
Output load
50pF+Pull up resistor 3.0kΩ
VDD
R=3.0kΩ
SDA
C=50pF
Output Load Circuit
No.A2087-3/14
LE24512AQF
Fast Mode
Spec.
Parameter
Symbol
unit
min
typ
max
Slave mode SCL clock frequency
fSCLS
SCL clock low time
tLOW
1200
0
400
kHz
SCL clock high time
tHIGH
600
SDA output delay time
tAA
100
SDA data output hold time
tDH
100
ns
Start condition setup time
tSU.STA
600
ns
Start condition hold time
tHD.STA
600
ns
Data in setup time
tSU.DAT
100
ns
ns
ns
900
ns
Data in hold time
tHD.DAT
0
ns
Stop condition setup time
tSU.STO
600
ns
SCL SDA rise time
tR
300
SCL SDA fall time
tF
Bus release time
tBUF
300
Noise suppression time
tSP
Write cycle time
tWC
1200
ns
ns
ns
100
ns
5
ms
Standard Mode
Spec.
Parameter
Symbol
unit
min
typ
0
max
Slave mode SCL clock frequency
fSCLS
100
kHz
SCL clock low time
tLOW
4700
SCL clock high time
tHIGH
4000
SDA output delay time
tAA
100
SDA data output hold time
tDH
100
ns
ns
ns
3500
ns
Start condition setup time
tSU.STA
4700
ns
Start condition hold time
tHD.STA
4000
ns
Data in setup time
tSU.DAT
250
ns
Data in hold time
tHD.DAT
0
ns
Stop condition setup time
tSU.STO
4000
ns
SCL SDA rise time
tR
SCL SDA fall time
tF
Bus release time
tBUF
Noise suppression time
tSP
Write cycle time
tWC
1000
300
4700
ns
ns
ns
100
ns
5
ms
No.A2087-4/14
LE24512AQF
Bus Timing
tF
tHIGH
tLOW
tR
SCL
tSP
tSU.STA
tHD.STA
tHD.DAT
tSU.DAT
tSU.STO
SDA/IN
tSP
tBUF
tDH
tAA
SDA/OUT
Write Timing
tWC
SCL
SDA
D0
Write data
Acknowledge
Stop
condition
Start
condition
Pin Functions
SCL (serial clock input) pin
The SCL signal is used to control serial input data timing. The SCL is used to latch input data synchronously at the
rising edge and read output data synchronously at the falling edge.
SDA (serial data input/output) pin
The SDA pin is bidirectional for serial data transfer. It is an open-drain structure that needs to be pulled up by resistor.
WP (write protect) pin
When the WP signal is high, write protection are enabled. When this signal is low, write operations for all memory
arrays are allowed. The read operation is always activated irrespective of the WP pin status.
S0/S1/S2 (Slave Address) pin
When many devices are connected on the same bus, the S0/S1/S2 are used to select the device.
The S0/S1/S2 must be tied to VDD or GND
No.A2087-5/14
LE24512AQF
Functional Description
The device supports the I2C protocol. Any device that sends data on to the bus is defined to be a transmitter, and any
device that reads the data to a receiver. The device that controls the data transfer is known as the bus master, and the
other as the slave device.
1 Start condition
A start condition needs to start the EEPROM operation, it is to set falling edge of the SDA while the SCL is stable in
the high status.
2 Stop condition
A start condition is identified by rising edge of the SDA signal while the SCL is stable in the high status. The device
becomes the standby mode from a read operation by a stop condition. In a write sequence, a stop condition is trigger
to terminate the write data inputs and it is trigger to start the internal write cycle. After the internally write cycle time
which is specified as tWC, the device enters a standby mode.
tSU.STA
tHD.STA
tSU.STO
SCL
SDA
Stop
condition
Start
condition
3 Data input
During data input, the device latches the SDA on the rising edge of the SCL. For correct the operation, the SDA must
be stable during the rising edge of the SCL.
tSU.DAT
tHD.DAT
SCL
SDA
4 Acknowledge bit (ACK)
The Acknowledge bit is used to indicate a successful byte data transfer. The receiver sends a zero to acknowledge that
it has received each word (Device code, Slave address etc) from the transmitter.
SCL
(EEPROM input)
1
8
9
SDA
(Master output)
SDA
(EEPROM output)
Start
condition
Acknowledge
bit output
tAA
tDH
No.A2087-6/14
LE24512AQF
5 Device addressing
To transmit between the bus master and slave device (EEPROM), the master must send a start condition to the
EEPROM. The device address word of the EEPROM consists of 4-bit device code, 3-bit slave device address code
and 1-bit read/write code. By sending there, it becomes possible to communicate between the bus master and the
EEPROM.
The upper 4-bits of the device address word are called the device code, the device code of the EEPROM uses “1010b”
fixed code. This device has the 3-bit of the slave device address as the slave address (S0,S1,S2), so it can connect up
to eight devices on the bus.
When the device code is received on the SDA, the device only responds if slave address pin tied to VDD or GND is
the same as the slave address signal input. The 8th bit is the read/write bit. The bit is set to 1 for read operation and 0
for write operation. If a match occurs on the device code, the corresponding devices give an acknowledgement on
SDA during the 9th bit time. If device does not match the device code, it deselects itself from the bus, and goes into
the standby mode. Use the random read command when you execute reading after the slave device was switched.
Slave
Address
Device code
LE24512AQF
1
MSB
0
1
0
S2
Device Address word
S1
S0
R/W
LSB
No.A2087-7/14
LE24512AQF
6 EEPROM write operation
6-1. Byte writing
The write operation requires a 7-bit device address word with the 8th bit=0 (write). Then the EEPROM sends
acknowledgement 0 at the 9th clock cycle. After these, the EEPROM receives word address (A15 to A8), and the
EEPROM outputs acknowledgement 0. And then, the EEPROM receives word address (A7 to A0), and the EEPROM
outputs acknowledgement 0. Then the EEPROM receives 8-bit write data, the EEPROM outputs acknowledgement 0
after receipt of write data. If the EEPROM receives a stop condition, the EEPROM enters an internally timed (tWC)
write cycle and terminates receipt of inputs until completion of the write cycle.
1 0 1 0 S2 S1 S0 W
A A A A A A
15 14 13 12 11 10 A9 A8
ACK
R/W
Data
A7 A6 A5 A4 A3 A2 A1 A0
D7 D6 D5 D4D3 D2 D1 D0
Stop
SDA
Start
Word Address
ACK
ACK
ACK
Access from master device
6-2. Page writing
The page write allows up to 128 bytes to be written in a single write cycle. The page write is the same sequences as
the byte write except for inputting the more write data. The page write is initiated by a start condition, device code,
device address, memory address (n) and write every 9th bit acknowledgement. The device enters the page write
operation if this device receives more write data (n+1) instead of receiving a stop condition. The page address (A0 to
A6) bits are automatically incremented on receiving write data (n+1). The device can continue to receive write data
up to 128 bytes. If the page address bit reaches the last address of the page, the page address bits will roll over to the
first address of the same page and previous write data will be overwritten. After these, if the device receives a stop
condition, the device enters an internally timed (tWC × (n+x)) write cycle and terminates receipt of inputs until
completion of the write cycle.
1 0 1 0 S2 S1 S0 W
A A A A A A A9
A8
15 14 13 12 11 10
ACK
R/W
Data(n)
A7 A6 A5 A4 A3 A2 A1 A0
D7 D6 D5 D4D3 D2 D1 D0
ACK
ACK
Data(n+1)
D7 D6
ACK
Data(n+x)
D1 D0
D7 D6
ACK
ACK
D1 D0
D7 D6
D1 D0
D7 D6
ACK
D1 D0
Stop
SDA
Start
Word Address
ACK
Access from master device
No.A2087-8/14
LE24512AQF
6-3. Acknowledge polling
Acknowledge polling operation is used to show if the EEPROM is in an internally timed write cycle or not.
This operation is initiated by the stop condition after inputting write data. This requires the 8-bit device address word
with the 8th bit = 0 (write) following the start condition during an internally timed write cycle. If the EEPROM is
busy with the internal write cycle, no acknowledge will be returned. If the EEPROM has terminated the internal write
cycle, it responds with an acknowledge. The terminated write cycle of the EEPROM can be known by this operation.
1 0 1 0 S2 S1 S0 W
NO ACK
R/W
Writing end
Write timing
Start
1 0 1 0 S2 S1 S0 W
Start
SDA
Start
Write timing
NO ACK
R/W
1 0 1 0 S2 S1 S0 W
ACK
R/W
Access from master device
No.A2087-9/14
LE24512AQF
7 EEPROM read operations
7-1. Current address read
The device has an internal address counter. It maintains that last address during the last read or write operation, with
incremented by one. The current address read accesses the address kept by the internal address counter. After
receiving a start condition and the device address word with the 8th bit = 1 (read), the EEPROM outputs the 8-bit
current address data from following acknowledgement 0. If the EEPROM receives acknowledgement 1 and a
following stop condition, the EEPROM stops the read operation and is returned to a standby mode. In case the
EEPROM has accessed the last address of the last page at previous read operation, the current address will roll over
and returns to zero address. In case EEPROM has accessed the last address of the last page at previous write operation,
the current addresses roll over within page addressing and return to the first address in the same page.
The current address is valid while power is on. After power on, the current address will be reset (all 0).
*: If the write data is 1 or more bytes but less than 128 bytes, the current address after page writing is the address equivalent to the number of bytes
to be written in the specified word address +1. If the write data is 128 or more bytes, it is the designated word address. If the last address (A6A0=1111111b) on the page has been designated by byte write as the word address, the first address (A6-A0=0000000b) on the page serves as the
internal address after writing.
1 0 1 0 S2 S1 S0 R
Data(n+1 address)
D7 D6 D5 D4D3 D2 D1 D0
ACK
R/W
Stop
SDA
Start
Device Address
NO ACK
Access from master device
7-2. Random read
The random read requires a dummy write to set read address. The EEPROM receives a start condition and the device
address word with the 8th bit = 0 (write), the memory address. The EEPROM outputs acknowledgement 0 after
receiving memory address then enters a current address read with receiving a start condition. The EEPROM outputs
the read data of the address which was defined in the dummy write operation. After receiving no acknowledgement
and a following stop condition, the EEPROM stops the random read operation and returns to a standby mode.
Word address
1 0 1 0 S2 S1 S0 W
A A A A A A
15 14 13 12 11 10 A9 A8
A7 A6 A5 A4 A3 A2 A1 A0
ACK
ACK
R/W
ACK
Dummy Write
Access from master device
1 0 1 0 S2 S1 S0 R
ACK
Data(n)
D7 D6
ACK
R/W
Current Read
D1 D0
Stop
Device Address
Start
SDA
Start
Device Address
NO ACK
No.A2087-10/14
LE24512AQF
7-3. Sequential read
The sequential read operation is initiated by either a current address read or random read. If the EEPROM receives
acknowledgement 0 after 8-bit read data, the read address is incremented and the next 8-bit read data outputs. The
current address will roll over and returns address zero if it reaches the last address of the last page. The sequential
read can be continued after roll over. The sequential read is terminated if the EEPROM receives no acknowledgement
and a following stop condition.
1 0 1 0 S2 S1 S0 R
Data(n)
D7 D6
ACK
R/W
D1 D0
Data(n+1)
D7 D6
ACK
D1 D0
Data(n+x)
Data(n+2)
D7 D6
ACK
D1 D0
D7 D6
ACK
D1 D0
Stop
SDA
Start
Device Address
NO ACK
Access from master device
No.A2087-11/14
LE24512AQF
Application Notes
1) Software reset function
Software reset (start condition + 9 dummy clock cycles + start condition), shown in the figure below, is executed in
order to avoid erroneous operation after power-on and to reset while the command input sequence. During the
dummy clock input period, the SDA bus must be opened (set to high by a pull-up resistor). Since it is possible for
the ACK output and read data to be output from the EEPROM during the dummy clock period, forcibly entering H
will result in an overcurrent flow.
Note that this software reset function does not work during the internal write cycle.
Dummy clock × 9
SCL
1
2
8
9
SDA
Start
condition
Start
condition
2) Pull-up resistor of SDA pin
Due to the demands of the I2C bus protocol function, the SDA pin must be connected to a pull-up resistor (with a
resistance from several kΩ to several tens of kΩ) without fail. The appropriate value must be selected for this
resistance (RPU) on the basis of the VIL and IIL of the microcontroller and other devices controlling this product as
well as the VOL–IOL characteristics of the product. Generally, when the resistance is too high, the operating
frequency will be restricted; conversely, when it is too low, the operating current consumption will increase.
RPU maximum resistance
The maximum resistance must be set in such a way that the bus potential, which is determined by the sum total (IL)
of the input leaks of the devices connected to the SDA bus and by RPU, can completely satisfy the input high level
(VIH min) of the microcontroller and EEPROM. However, a resistance value that satisfies SDA rise time tR and fall
time tF must be set.
RPU maximum value = (VDD - VIH)/IL
Example: When VDD=3.0V and IL= 2μA
RPU maximum value = (3.0V − 3.0V × 0.8)/2μA = 300kΩ
RPU minimum value
A resistance corresponding to the low-level output
voltage (VOL max) of SANYO’s EEPROM must be set.
RPU minimum value = (VDD − VOL)/IOL
RPU
SDA
Master
Device
IL
EEPROM
CBUS
IL
Example: When VDD=3.0V, VOL = 0.4V and IOL = 1mA
RPU minimum value = (3.0V − 0.4)/1mA = 2.6kΩ
Recommended RPU setting
RPU is set to strike a good balance between the operating frequency requirements and power consumption. If it is
assumed that the SDA load capacitance is 50pF and the SDA output data strobe time is 500ns, RPU will be about
RPU = 500ns/50pF = 10kΩ.
No.A2087-12/14
LE24512AQF
3) Precautions when turning on the power
This product contains a power-on reset circuit for preventing the inadvertent writing of data when the power is
turned on. The following conditions must be met in order to ensure stable operation of this circuit. No data
guarantees are given in the event of an instantaneous power failure during the internal write operation.
Spec.
Item
Symbol
unit
min
Power rise time
tRISE
Power off time
tOFF
Power bottom voltage
Vbot
typ
max
100
10
ms
ms
0.2
V
tRISE
VDD
tOFF
Vbot
0V
Notes:
1) The SDA pin must be set to high and the SCL pin to low or high.
2) Steps must be taken to ensure that the SDA and SCL pins are not placed in a high-impedance state.
A. If it is not possible to satisfy the instruction 1 in Note above, and SDA is set to low during power rise.
After the power has stabilized, the SCL and SDA pins must be controlled as shown below, with both pins set to high.
VDD
VDD
tLOW
SCL
SCL
SDA
SDA
tDH
tSU.DAT
tSU.DAT
B. If it is not possible to satisfy the instruction 2 in Note above
After the power has stabilized, software reset must be executed.
C. If it is not possible to satisfy the instructions both 1 and 2 in Note above.
After the power has stabilized, the steps in A must be executed, then software reset must be executed.
4) Noise filter for the SCL and SDA pins
This product contains a filter circuit for eliminating noise at the SCL and SDA pins. Pulses of 100ns or less are not
recognized because of this function.
5) Function to inhibit writing when supply voltage is low
This product contains a supply voltage monitoring circuit that inhibits inadvertent writing below the guaranteed
operating supply voltage range. The data is protected by ensuring that write operations are not started at voltages
(typ.) of 1.3V and below.
No.A2087-13/14
LE24512AQF
6) Notes on write protect operation
This product prohibits all memory array writing when the WP pin is high. To ensure full write protection, the WP is
set high for all periods from the start condition to the stop condition, and the conditions below must be satisfied.
Spec.
Item
Symbol
unit
min
typ
max
WP Setup time
tSU.WP
600
ns
WP Hold time
tHD.WP
600
ns
WP
tHD.WP
tSU.WP
SCL
SDA
Start
condition
Stop
condition
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of Jun, 2012. Specifications and information herein are subject
to change without notice.
PS No.A2087-14/14