SANYO MCH6336

MCH6336
Ordering number : ENA0958A
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
MCH6336
General-Purpose Switching Device
Applications
Features
•
•
Ultrahigh-speed switching
Halogen free compliance
•
•
1.8V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
--12
V
±10
V
Allowable Power Dissipation
ID
IDP
PD
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm2×0.8mm)
--5
A
--20
A
Product & Package Information
unit : mm (typ)
7022A-009
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
2.0
6
5
0.15
4
1
2
0.3
0.85
1
6
2
5
3
4
YK
TL
3
0.65
Marking
LOT No.
0.25
Packing Type : TL
LOT No.
0.07
MCH6336-TL-E
MCH6336-TL-H
0 t o 0.02
2.1
1.6
0.25
Package Dimensions
Electrical Connection
1, 2, 5, 6
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
3
SANYO : MCPH6
4
http://semicon.sanyo.com/en/network
61312 TKIM/13008PE TIIM TC-00001168 No. A0958-1/7
MCH6336
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Conditions
Ratings
min
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±8V, VDS=0V
--12
VDS=--6V, ID=--1mA
VDS=--6V, ID=--3A
--0.4
4.8
ID=--3A, VGS=--4.5V
ID=--1.5A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
typ
Unit
max
V
--10
μA
±10
μA
--1.4
8.1
V
S
33
43
mΩ
47
66
mΩ
68
98
mΩ
660
pF
210
pF
Crss
155
pF
Turn-ON Delay Time
td(on)
7.4
ns
Rise Time
tr
57
ns
Turn-OFF Delay Time
td(off)
72
ns
Fall Time
tf
69
ns
Total Gate Charge
Qg
6.9
nC
Gate-to-Source Charge
Qgs
1.2
nC
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--6V, f=1MHz
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--5A
1.8
IS=--5A, VGS=0V
--0.83
nC
--1.2
V
Switching Time Test Circuit
VDD= --6V
VIN
0V
--4.5V
ID= --3A
RL=2Ω
VIN
D
VOUT
PW=10μs
D.C.≤1%
G
MCH6336
P.G
50Ω
S
Ordering Information
Package
Shipping
memo
MCH6336-TL-E
Device
MCPH6
3,000pcs./reel
Pb Free
MCH6336-TL-H
MCPH6
3,000pcs./reel
Pb Free and Halogen Free
No. A0958-2/7
MCH6336
ID -- VDS
--5
--2
--4
--3
--2
--25°C
Drain Current, ID -- A
--1.5V
Ta=7
5°C
V
--1
--2.5
VDS= --6V
--3.0
V
--4.5V
--3
--8.0V
Drain Current, ID -- A
--4
ID -- VGS
--6
.8 V
--5
--1
25°C
--1
VGS= --1.0V
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
0
--1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
120
100
80
ID= --0.5A
--1.5A
60
--3.0A
40
20
0
0
--1
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
=
Ta
2
5°C
--2
75
°C
°C
25
1.0
7
5
2
--40
--20
0
20
40
60
80
100
120
140
160
IT12990
IS -- VSD
VGS=0V
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.001
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
0
5 7 --10
IT12991
--0.4
--0.6
--0.8
--1.0
--1.2
IT12992
Ciss, Coss, Crss -- VDS
3
VDD= --6V
VGS= --4.5V
7
5
--0.2
Diode Forward Voltage, VSD -- V
SW Time -- ID
1000
f=1MHz
2
3
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
20
--0.01
7
5
3
2
3
0.1
--0.01
40
--10
7
5
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
3
60
Ambient Temperature, Ta -- °C
10
7
5
--2.5
IT12988
5A
= --0.
8V, I D
.
1
-=
VGS
--1.5A
, I D=
--2.5V
=
V GS
.0A
I = --3
--4.5V, D
V GS=
80
0
--60
--8
VDS= --6V
2
--2.0
100
IT12989
| yfs | -- ID
3
--1.5
RDS(on) -- Ta
120
Ta=25°C
140
--1.0
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
160
--0.5
IT12987
Ta=
75°
C
25°C
--25°
C
0
td(off)
100
7
5
tf
3
2
tr
10
td(on)
7
Ciss
7
5
3
Coss
Crss
2
100
5
3
--0.01
1000
7
5
2
3
5 7 --0.1
2
3
5 7 --1.0
Drain Current, ID -- A
2
3
5 7 --10
IT12993
0
--2
--4
--6
--8
--10
Drain-to-Source Voltage, VDS -- V
--12
IT12994
No. A0958-3/7
MCH6336
VGS -- Qg
5
3
2
VDS= --6V
ID= --5A
--4.0
--3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--4.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
1
2
3
4
5
Total Gate Charge, Qg -- nC
7
IT12995
PD -- Ta
1.6
Allowable Power Dissipation, PD -- W
6
--10
7
5
ASO
IDP= --20A
ID= --5A
DC
3
2
op
0m
s
n(
Ta
=2
5
tio
--1.0
7
5
3
2
--0.1
7
5
3
2
10
era
PW≤10μs
10
0μ
1m s
10 s
ms
Operation in this area
is limited by RDS(on).
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate (1200mm2✕0.8mm)
--0.01
--0.01
2
3
5 7 --0.1
2 3
5 7 --1.0
2
3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2 3
IT12996
When mounted on ceramic substrate
(1200mm2✕0.8mm)
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12997
No. A0958-4/7
MCH6336
Taping Specification
MCH6336-TL-E, MCH6336-TL-H
No. A0958-5/7
MCH6336
Outline Drawing
MCH6336-TL-E, MCH6336-TL-H
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No. A0958-6/7
MCH6336
Note on usage : Since the MCH6336 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
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different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A0958-7/7