TF252 Ordering number : ENA0841 SANYO Semiconductors DATA SHEET TF252 N-channel Silicon Junction FET Electret Condenser Microphone Applications Features • • • • • • • High gain : GV=1.0dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz). Ultrasmall package facilitates miniaturization in end products [1.0mm✕0.6mm✕0.27mm (max 0.3mm)]. Best suited for use in Electret Condenser Microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Symbol Conditions Ratings VGDO IG Gate Current Drain Current Unit --20 V 10 mA 1 mA 30 mW Junction Temperature ID PD Tj 150 °C Storage Temperature Tstg --55 to +150 °C Allowable Power Dissipation Marking: D Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 70407GB TI IM TC-00000793 No. A0841-1/4 TF252 Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDO Zero-Gate Voltage Drain Current IDSS IG=--100µA VDS=2V, ID=1µA VDS=2V, VGS=0V Forward Transfer Admittance Input Capacitance yfs Ciss VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz Reverse Transfer Capacitance Crss VDS=2V, VGS=0V, f=1MHz Cutoff Voltage Ratings Conditions VGS(off) min typ Unit max --20 --0.1 V --0.4 140* 0.8 --1.0 V 350* µA 1.4 mS 3.1 pF 0.95 pF [Ta=25°C, VCC=2V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain Frequency Characteristic GV ∆GVV ∆Gvf Total Harmonic Distortion THD VIN=30mV, f=1kHz 0.65 Output Noise Voltage VNO VIN=0V, A curve --106 Reduced Voltage Characteristic VIN=10mV, f=1kHz 1.0 VIN=10mV, f=1kHz, VCC=2.0→1.5V dB --0.6 --2.0 dB --1.0 dB --102 dB f=1kHz to 110Hz % * : The TF252 is classified by IDSS as follows : (unit : µA) 4 140 to 240 Rank IDSS 5 210 to 350 Package Dimensions Test Circuit unit : mm (typ) 7055-001 Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic ! VCC=2V VCC=1.5V 33µF + 5pF 2.2kΩ VTVM V THD OSC ! 1 : Drain 2 : Source 3 : Gate SANYO : USFP ID -- VDS 300 V GS=0V 200 --0.05V 150 --0.10V 100 --0.15V 50 --0.25V V V GS=0 300 Drain Current, ID -- µA 250 Drain Current, ID -- µA ID -- VDS 350 --0.20V --0.30V 0 250 200 --0.1V 150 100 --0.2V 50 --0.4V --0.3V 0 0 0.5 1.0 1.5 Drain-to-Source Voltage, VDS -- V 2.0 IT12440 0 4 5 Drain-to-Source Voltage, VDS -- V 1 2 3 IT12441 No. A0841-2/4 TF252 ID -- VGS 400 ID -- VGS 400 VDS=2V 300 300 50 --0.5 --0.4 --0.3 --0.2 --0.1 Gate-to-Source Voltage, VGS -- V Cutoff Voltage, VGS(off) -- V Forward Transfer Admittance, yfs -- mS 1.3 1.2 1.1 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- µA 75 °C --0.1 0 IT12443 VGS(off) -- IDSS VDS=2V ID=1µA --0.50 --0.45 --0.40 --0.35 --0.30 --0.20 100 400 150 Reverse Transfer Capacitance, Crss -- pF 7 5 3 2 250 300 350 400 IT12445 Crss -- VDS 3 VGS=0V f=1MHz 200 Zero-Gate Voltage Drain Current, IDSS -- µA IT12444 Ciss -- VDS 10 Input Capacitance, Ciss -- pF --0.2 --0.25 1.0 100 VGS=0V f=1MHz 2 1.0 7 5 3 1.0 5 7 2 1.0 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V 5 3 GV -- IDSS GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 0.8 0.6 0.4 0.2 0 --0.2 --0.4 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- µA 400 IT12448 7 1.0 2 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V IT12446 Reduced Voltage Characteristic, ∆GVV -- dB Voltage Gain, GV -- dB --0.3 --0.55 1.4 1.0 --0.4 Gate-to-Source Voltage, VGS -- V --0.60 1.5 1.2 --0.5 IT12442 VDS=2V VGS=0V f=1kHz 1.6 1.4 100 0 --0.6 0 yfs -- IDSS 1.7 1.6 150 50 0 --0.6 1.8 200 --2 5° C 15 100 250 25 °C A 25 0µ 150 0µ S =3 200 A 50 µA 250 Ta = Drain Current, ID -- µA 350 ID S Drain Current, ID -- µA VDS=2V 350 3 IT12447 ∆GVV -- IDSS --0.2 ∆GVV : VCC=2V→1.5V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- µA 400 IT12449 No. A0841-3/4 TF252 THD -- VIN THD : VCC=2V f=1kHz RL=2.2kΩ Cin=5pF 50µA IDSS : VDS=2V I SS=1 D A 250µ 10 7 5 3 2 350µA 1.0 7 5 3 2 0.1 0 50 100 150 Input Voltage, VIN -- mV Allowable Power Dissipation, PD -- mW 200 IT12450 PD -- Ta 35 THD -- IDSS 1.4 Total Harmonic Distortion, THD -- % Total Harmonic Distortion, THD -- % 2 THD : VCC=2V VIN=30mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 1.2 1.0 0.8 0.6 0.4 0.2 0 100 150 200 250 300 350 Zero-Gate Voltage Drain Current, IDSS -- µA 400 IT12451 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12452 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2007. Specifications and information herein are subject to change without notice. PS No. A0841-4/4