SPV1002 Cool bypass switch for photovoltaic applications Features ■ IF = 16 A, VR = 40 V ■ Very low forward voltage drop ■ Very low reverse leakage current ■ K K A A A 175 °C operating junction temperature TO220 A K D2PAK Applications ■ Photovoltaic panels Description The SPV1002 is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current. The device consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. Table 1. Device summary Order codes Package Packaging SPV1002D40 D2PACK Tube SPV1002T40 TO220 Tube SPV1002D40TR D2PACK Tape and reel November 2011 Doc ID 018839 Rev 3 1/12 www.st.com 12 Maximum ratings SPV1002 1 Maximum ratings 1.1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Range [min, max] Unit VR Max DC reverse voltage 40 V IF Max forward current 16 A Non repetitive peak surge (half-wave, single-phase, 60 Hz) 250 A Human body level ≥8k V 1.6 °C/W Junction temperature operating range -40 to 175 °C Storage temperature range -40 to 175 °C IFSM ESD level RthJC TJ TSTG 2/12 Parameter Thermal resistance, junction-to-ambient TO220) Doc ID 018839 Rev 3 (D2PAK, SPV1002 2 Electrical characteristics Electrical characteristics Table 3. Electrical characteristics Values Symbol Parameter Test condition IF = 16A (1) VF,AVG AVG forward voltage drop IR Reverse leakage current D TON/T ratio IF = 8A (1) VR = 40V IF = 8A (1) IF = 8A, TOFF VF Forward voltage drop IF = 8A (1), TON Unit Min Typ Max TJ = 25°C - 180 - mV TJ = 25°C - 110 - mV TJ = 125 °C - 230 - mV TJ = 25°C - 1 - µA TJ = 125°C - 10 - µA TJ = 25°C - 95% - - TJ = 125°C - 75% - - TJ = 25°C - 850 - mV TJ = 125°C - 600 - mV TJ = 25°C - 60 - mV TJ = 125°C - 120 - mV 1. For correct power dissipation and heatsink sizing, please refer to Figure 1, 4 and 5. Doc ID 018839 Rev 3 3/12 Device description 3 SPV1002 Device description A photovoltaic panel consists of a series of PV cells. In optimal conditions, all the cells are equally irradiated and function at the same current level. However, during normal operation some cells may become partially shaded or obscured. These shaded cells limit the current generated by the fully irradiated cells and, in the extreme cases where these cells are totally obscured, the current flow is blocked. In this case the shaded cells behave like a load, and the current generated from the fully irradiated cells produces overvoltages which can reach the breakdown threshold. This phenomenon, known as a “hot spot”, can cause overheating of the shaded cells and, in some cases, even permanent damage resulting in current leakage. To prevent hot spots, therefore, bypass diodes are connected in parallel to the cell strings. The device described here has the same functionality as a Schottky diode, but with improved performance. It features very low forward voltage drop and reverse leakage current. It consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. 4/12 Doc ID 018839 Rev 3 SPV1002 Device description Figure 1. Average forward power dissipation Figure 2. versus average forward current 7 & ț KHDWVLQNHUGRXEOHVL]H 3)$9 : Forward voltage țCM )RUZDUG9ROWDJHP9 țCM țCM țCM ,)$9$ !-V !-V Figure 3. Reverse current Figure 4. " ϭϬϬ )RUZDUG&XUUHQW$ ϭϴ Average current versus ambient temperature /&;sͿ;Ϳ ZƚŚ;ũͲĂͿсZƚŚ;ũͲĐͿ ϭϲ ϭϬ 4 # ϭϰ 4 # ϭϮ ZƚŚ;ũͲĂͿсϯϬ϶ͬt ϭϬ 4 # ϴ 4 # ϭ ϲ ϰ 4 # Ϯ Ϭ͘ϭ Ϭ ϱ ϭϬ ϭϱ ϮϬ Ϯϱ ϯϬ ϯϱ ϰϬ ϰϱ ϱϬ 7 dĂŵď;϶Ϳ Ϭ Ϭ !-V Doc ID 018839 Rev 3 Ϯϱ ϱϬ ϳϱ ϭϬϬ ϭϮϱ ϭϱϬ ϭϳϱ !-V 5/12 Device description Figure 5. SPV1002 Thermal resistance junction-toambient vs copper surface under tab (1) 5WKMD&: 6FPð !-V 1. Epoxy printed board FR4, Cu = 35 µm 6/12 Doc ID 018839 Rev 3 SPV1002 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 4. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 018839 Rev 3 7/12 Package mechanical data Figure 6. SPV1002 TO-220 type A drawing 0015988_typeA_Rev_S 8/12 Doc ID 018839 Rev 3 SPV1002 Package mechanical data Table 5. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° Doc ID 018839 Rev 3 9/12 Package mechanical data Figure 7. SPV1002 D²PAK (TO-263) drawing 0079457_R 10/12 Doc ID 018839 Rev 3 SPV1002 5 Revision history Revision history Table 6. Document revision history Date Revision Changes 16-May-2011 1 Initial release 16-Jun-2011 2 – Added D2PAK package – Minor text changes 17-Nov-2011 3 Updated Figure 3 Doc ID 018839 Rev 3 11/12 SPV1002 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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