STB50N25M5 N-channel 250 V, 0.065 Ω, 28 A, MDmesh™ V Power MOSFET in D²PAK package Datasheet — production data Features Type VDSS RDS(on) max ID STB50N25M5 250 V < 0.075 Ω 28 A ■ Amongst the best RDS(on)* area ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested TAB 3 1 D²PAK Application ■ Switching applications Figure 1. Internal schematic diagram Description $OR4!" This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STB50N25M5 50N25M5 D²PAK Tape and reel March 2012 This is information on a product in full production. Doc ID 15923 Rev 3 1/14 www.st.com 14 Contents STB50N25M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 8 Doc ID 15923 Rev 3 STB50N25M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 28 A ID Drain current (continuous) at TC = 100 °C 18 A IDM (1) Drain current (pulsed) 112 A PTOT Total dissipation at TC = 25 °C 110 W 9 A VGS Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 350 mJ Peak diode recovery voltage slope 15 V/ns -55 to 150 °C Value Unit dv/dt(2) TJ Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 28 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max 0.31 °C/W Rthj-pcb Thermal resistance junction-pcb max 30 °C/W Doc ID 15923 Rev 3 3/14 Electrical characteristics 2 STB50N25M5 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 250 V IDSS Zero gate voltage VDS = 250 V drain current (VGS = 0) VDS = 250 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) ±100 nA 4 5 V 0.065 0.075 Ω Min. Typ. Max. Unit VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source onVGS = 10 V, ID = 14 A resistance Table 5. Symbol 3 Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 1700 100 15 - pF pF pF Co(er)(1) Equivalent output capacitance energy related VGS = 0, VDS = 0 to 80% V(BR)DSS - 89 - pF Co(tr)(2) Equivalent output capacitance time related VGS = 0, VDS = 0 to 80% V(BR)DSS - 171 - pF Rg Gate input resistance f=1 MHz open drain - 1.8 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 200 V, ID = 28 A, VGS = 10 V (see Figure 15) - 44 10 23 - nC nC nC 1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS 2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 4/14 Doc ID 15923 Rev 3 STB50N25M5 Electrical characteristics Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 125 V, ID = 14 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14) Min. Typ. - 16 44 35 20 Max Unit - ns ns ns ns Max Unit - 28 112 A A 1.6 V Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Min. Typ. Forward on voltage ISD = 28 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 28 A, di/dt = 100 A/µs VDD= 60 V, TJ = 25 °C (see Figure 16) - 174 1.5 18 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 28 A, di/dt = 100 A/µs VDD= 60 V TJ = 150 °C (see Figure 16) - 195 2 20 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15923 Rev 3 5/14 Electrical characteristics STB50N25M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM03968v1 ID (A) D S( on ) O Li per m at ite io d ni by n m this ax a R rea is 100 10 10µs 100µs 1ms Tj=150°C Tc=25°C 1 Sinlge pulse 0.1 0.1 Figure 4. ID (A) 10ms 10 1 100 VDS(V) Output characteristics AM03969v1 VGS=10V 50 AM03970v1 ID (A) 50 40 VDS=20V 40 7V 30 30 6V 20 20 10 10 5V 0 0 Figure 6. 5 10 15 20 25 30 Normalized BVDSS vs temperature AM10399v1 VDS 0 0 VDS(V) (norm) Figure 7. 2 4 6 8 10 VGS(V) Static drain-source on-resistance AM03972v1 RDS(on) (Ω) 1.08 ID = 1mA VGS=10V 1.06 0.070 1.04 1.02 0.065 1.00 0.98 0.060 0.96 0.94 0.92 -50 -25 6/14 0 25 50 75 100 TJ(°C) 0.055 0 Doc ID 15923 Rev 3 5 10 15 20 25 ID(A) STB50N25M5 Figure 8. Electrical characteristics Output capacitance stored energy AM04951v1 Eoss (µJ) Figure 9. Capacitance variations AM03973v1 C (pF) 2.5 Ciss 1000 2.0 100 1.5 Coss 1.0 Crss 10 0.5 0 0 100 50 150 200 250 1 0.1 VDS(V) 1 10 100 VDS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Normalized on-resistance vs temperature AM03974v1 VGS (V) VGS VDD=200V 12 AM03976v1 RDS(on) (norm) 2.1 ID=28A ID=14A VGS=10V VDS 10 1.7 8 1.3 6 4 0.9 2 0 0 Figure 12. 20 10 30 40 50 Qg(nC) 0.5 -50 -25 0 25 50 75 100 TJ(°C) Normalized gate threshold voltage Figure 13. Source-drain diode forward vs temperature characteristics AM03975v1 VGS(th) (norm) 1.10 ID=100µA AM03978v1 VSD (V) TJ=-50°C 1.2 1.0 1.00 0.8 0.90 TJ=25°C 0.6 TJ=150°C 0.4 0.80 0.2 0.70 -50 -25 0 0 25 50 75 100 TJ(°C) Doc ID 15923 Rev 3 0 10 20 30 40 50 ISD(A) 7/14 Test circuits 3 STB50N25M5 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform AM01471v1 Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 Doc ID 15923 Rev 3 10% AM01473v1 STB50N25M5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° Doc ID 15923 Rev 3 9/14 Package mechanical data STB50N25M5 Figure 20. D²PAK (TO-263) drawing 0079457_T Figure 21. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimensions are in millimeters 10/14 Doc ID 15923 Rev 3 Footprint STB50N25M5 5 Packaging mechanical data Packaging mechanical data Table 9. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 15923 Rev 3 Min. Max. 330 13.2 26.4 30.4 11/14 Packaging mechanical data STB50N25M5 Figure 22. Tape for D²PAK (TO-263) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 23. Reel for D²PAK (TO-263) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 12/14 Doc ID 15923 Rev 3 STB50N25M5 6 Revision history Revision history Table 10. Document revision history Date Revision Changes 23-Jun-2009 1 First release 15-Mar-2012 2 Section 4: Package mechanical data has been updated. Minor text changes. 28-Mar-2012 3 Figure 7: Static drain-source on-resistance has been updated. Doc ID 15923 Rev 3 13/14 STB50N25M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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