STMICROELECTRONICS STD25NF10LT4

STD25NF10L
N-channel 100V - 0.030Ω - 25A - DPAK
Low gate charge STripFET™ II Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STD25NF10L
100V
< 0.035Ω
25A
■
Exceptional dv/dt capability
■
100% avalanche tested
■
Low threshold device
■
Logic level device
3
1
DPAK
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STD25NF10LT4
D25NF10L
DPAK
Tape & reel
July 2006
Rev 2
1/13
www.st.com
13
Contents
STD25NF10L
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
................................................ 8
STD25NF10L
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Value
Unit
Drain-source voltage (VGS = 0)
100
V
Drain-gate voltage (RGS = 20 kΩ)
100
V
VGS
Gate- source voltage
± 16
V
ID(1)
Drain current (continuous) at TC = 25°C
25
A
ID
Drain current (continuous) at TC = 100°C
21
A
Drain current (pulsed)
100
A
Total dissipation at TC = 25°C
100
W
Derating Factor
0.67
W/°C
Peak diode recovery avalanche energy
20
V/ns
Single pulse avalanche energy
450
mJ
-55 to 175
°C
VDS
VDGR
IDM
(2)
Ptot
dv/dt(3)
EAS
(4)
Tstg
Tj
Parameter
Storage temperature
Max. operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area.
3. ISD ≤25A, di/dt ≤300A/µs, VDD =V(BR)DSS, Tj ≤TJMAX
4. Starting Tj = 25 °C, ID = 12.5A VDD = 50V
Table 2.
Rthj-case
Rthj-pcb
TJ
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-pcb max
(1)
Maximum lead temperature for soldering purpose
1.5
°C/W
100
°C/W
275
°C
1. When Mounted on 1 inch2 FR-4 board, 2 oz of Cu.
3/13
Electrical characteristics
2
STD25NF10L
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS =0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating,
TC = 125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 16V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 12.5A
VGS = 4.5V, ID = 12.5A
Table 4.
Symbol
Test conditions
Typ.
Max.
100
Unit
V
1
10
µA
µA
±100
nA
2.5
V
0.030
0.035
0.035
0.040
Ω
Ω
Typ.
Max.
Unit
1
Dynamic
Parameter
Test conditions
Min.
gfs (1)
Forward
transconductance
VDS = 15V, ID = 12.5A
24
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
1710
250
110
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 50V, ID = 12.5A
RG = 4.7Ω VGS = 5V
(see Figure 13)
20
40
58
20
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 80V, ID = 25A,
VGS = 5V, RG = 4.7Ω
(see Figure 14)
38
8.5
21
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/13
Min.
52
nC
nC
nC
STD25NF10L
Electrical characteristics
Table 5.
Symbol
Source drain diode
Parameter
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
IRRM
Test conditions
Min.
Typ.
ISD = 25A, VGS = 0
Reverse recovery time
ISD = 25A, di/dt = 100A/µs,
Reverse recovery charge VDD = 50V, Tj = 150°C
Reverse recovery current (see Figure 15)
88
317
7.2
Max.
Unit
25
100
A
A
1.5
V
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/13
Electrical characteristics
STD25NF10L
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static drain-source on resistance
6/13
STD25NF10L
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 12. Normalized breakdown voltage vs
temperature
7/13
Test circuit
3
STD25NF10L
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
Figure 16. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 17. Unclamped inductive waveform
8/13
Figure 18. Switching time waveform
STD25NF10L
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/13
Package mechanical data
STD25NF10L
DPAK MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
A1
A2
B
b4
MIN.
2.2
0.9
0.03
0.64
5.2
TYP
2.4
1.1
0.23
0.9
5.4
0.086
0.035
0.001
0.025
0.204
0.094
0.043
0.009
0.035
0.212
C
C2
D
D1
E
E1
e
e1
H
L
(L1)
L2
L4
R
V2
0.45
0.48
6
0.6
0.6
6.2
0.017
0.019
0.236
0.023
0.023
0.244
6.6
0.252
5.1
6.4
0.173
0.368
0.039
2.8
0.8
0.181
0.397
0.110
0.031
1
0.023
0.2
0°
0.260
0.185
0.090
4.6
10.1
0.6
MAX.
0.200
4.7
2.28
4.4
9.35
1
TYP.
0.039
0.008
8°
0°
8°
0068772-F
10/13
STD25NF10L
5
Packing mechanical data
Packing mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
1.5
D1
1.5
E
1.65
MIN.
12.1
0.476
1.6
0.059 0.063
1.85
0.065 0.073
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
0.153 0.161
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
40
15.7
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
0.059
F
R
MIN.
MAX.
K0
W
inch
MAX.
1.574
16.3
0.618
0.641
11/13
Revision history
6
STD25NF10L
Revision history
Table 6.
12/13
Revision history
Date
Revision
Changes
21-Jun-2004
1
Preliminary version
03-Jun-2006
2
New template, no content change
STD25NF10L
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