STB20NM50FD STF20NM50FD - STP20NM50FD N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET (with fast diode) Features Type VDSS RDS(on) RDS(on)* Qg max STB20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC STF20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC STP20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC ID 20 A 20 A 20 A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Tight process control and high manufacturing yields 3 3 1 2 1 TO-220FP 3 2 TO-220 1 D²PAK Figure 1. Internal schematic diagram Application ■ Switching applications Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STB20NM50FD B20NM50FD D²PAK Tape and reel STF20NM50FD F20NM50FD TO-220FP Tube STP20NM50FD P20NM50FD TO-220 Tube April 2008 Rev 9 1/16/ www.st.com 16 Contents STB20NM50FD - STF20NM50FD - STP20NM50FD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 ................................................ 9 STB20NM50FD - STF20NM50FD - STP20NM50FD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D²PAK TO-220FP TO-220 VDS Drain-source voltage (VGS=0) 500 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 20 20 (1) A ID Drain current (continuous) at TC = 100 °C 14 14(1) A IDM (2) Drain current (pulsed) 80 80(1) A PTOT Total dissipation at TC = 25 °C 192 45 W dv/dt (3) Peak diode recovery voltage slope 20 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature Tj V/ns -- 2500 V -65 to 150 °C 150 °C Operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 20 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max 62.5 Rthj-pcb Thermal resistance junction-pcb max -- Tl Table 4. Symbol TO-220 D²PAK TO-220FP Unit 2.8 °C/W -- 62.5 °C/W 30 -- °C/W 0.65 Maximum lead temperature for soldering purposes 300 °C Avalanche characteristics Parameter Max value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 10 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAS, VDD = 35 V) 700 mJ 3/16 Electrical characteristics 2 STB20NM50FD - STF20NM50FD - STP20NM50FD Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ± 30 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 10 A Symbol Min. Typ. Max. 500 1 10 µA µA ± 100 nA 4 5 V 0.22 0.25 Ω Typ. Max. Unit VDS = Max rating,@125 °C 3 Unit V VDS = Max rating, IDSS Table 6. Dynamic Parameter gfs(1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS > ID(on) x RDS(on)max, ID= 10 A VDS = 25V, f =1 MHz, VGS = 0 Min. 9 S 1380 290 40 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 400 V 130 pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain 2.8 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge Coss eq.(2) 1. On/off states VDD = 400 V, ID = 20 A VGS = 10 V (see Figure 16) 38 18 10 53 nC nC nC Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STB20NM50FD - STF20NM50FD - STP20NM50FD Table 7. Switching times Symbol Parameter td(on) tr tr(Voff) tf tc Table 8. Symbol Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Electrical characteristics Test conditions VDD = 250 V, ID = 10 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) VDD = 400 V, ID = 20 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) Parameter Test conditions Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 20 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD =20 A, di/dt =100 A/µs, VDD = 60 V, TJ=150 °C (see Figure 17) IRRM Typ Max Unit 22 20 ns ns 6 15 30 ns ns ns Source drain diode ISD ISDM (1) trr Qrr Min Min Typ 245 2 16 Max Unit 20 80 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 5/16 Electrical characteristics STB20NM50FD - STF20NM50FD - STP20NM50FD 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK Figure 3. Thermal impedance for TO-220 / D²PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/16 STB20NM50FD - STF20NM50FD - STP20NM50FD Figure 8. Transconductance Electrical characteristics Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/16 STB20NM50FD - STF20NM50FD - STP20NM50FD STB20NM50FD - STF20NM50FD - STP20NM50FD 3 Test circuit Test circuit Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/16 Package mechanical data 4 STB20NM50FD - STF20NM50FD - STP20NM50FD Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB20NM50FD - STF20NM50FD - STP20NM50FD Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/16 Package mechanical data STB20NM50FD - STF20NM50FD - STP20NM50FD TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 0.067 G 4.95 5.20 0.195 0.204 G1 2.40 2.70 0.094 0.106 H 10 10.40 0.393 L2 16 0.409 0.630 28.6 30.6 1.126 L4 9.80 10.60 0.385 1.204 0.417 L5 2.9 3.6 0.114 0.141 L6 15.90 16.40 0.626 0.645 L7 9 9.30 0.354 0.366 Dia 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 Dia F F1 L7 L2 L5 1 2 3 L4 7012510-I 12/16 STB20NM50FD - STF20NM50FD - STP20NM50FD Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 13/16 Packaging mechanical data 5 STB20NM50FD - STF20NM50FD - STP20NM50FD Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 14/16 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB20NM50FD - STF20NM50FD - STP20NM50FD 6 Revision history Revision history Table 9. Document revision history Date Revision 21-Jun-2004 8 21-Apr-2008 9 Changes Figure 4: Safe operating area for TO-220FP and Figure 5: Thermal impedance for TO-220FP added. 15/16 STB20NM50FD - STF20NM50FD - STP20NM50FD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16