STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 Ω, 8.5 A MDmesh™ V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features VDSS @ TJmax Type STD12N65M5 STF12N65M5 STI12N65M5 STP12N65M5 STU12N65M5 710 V RDS(on) max ID PTOT 3 2 8.5 A 8.5 A(1) < 0.43 Ω 8.5 A 8.5 A 8.5 A 3 1 70 W 25 W 70 W 70 W 70 W IPAK TO-220 3 1 DPAK 1. Limited only by maximum temperature allowed. 3 3 12 ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested 2 1 1 TO-220FP I²PAK Figure 1. 2 Internal schematic diagram Applications $ Switching applications Description ' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. !-V Device summary Order codes STD12N65M5 STF12N65M5 STI12N65M5 STP12N65M5 STU12N65M5 June 2011 3 Marking Packages Packaging 12N65M5 DPAK TO-220FP I²PAK TO-220 IPAK Tape and reel Tube Tube Tube Tube Doc ID 15428 Rev 5 1/23 www.st.com 23 Contents STD/F/I/P/U12N65M5 Contents 1 Electrical ratings 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 ........................................... 3 Electrical characteristics (curves) ......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2/23 .............................................. 9 Doc ID 15428 Rev 5 STD/F/I/P/U12N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, IPAK, DPAK, I²PAK TO-220FP VDS Drain-source voltage (VGS = 0) 650 VGS Gate-source voltage 25 V V (1) A ID Drain current (continuous) at TC = 25 °C 8.5 8.5 ID Drain current (continuous) at TC = 100 °C 5.4 5.4 (1) A Drain current (pulsed) 34 (1) A Total dissipation at TC = 25 °C 70 IDM (2) PTOT 34 25 W IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 2.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 150 mJ Peak diode recovery voltage slope 15 V/ns dv/dt (3) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed. 2. Pulse width limited by safe operating area. 3. ISD ≤ 8.5 A, di/dt ≤400 A/µs; VPeak < V(BR)DSS, VDD = 400 V Table 3. Thermal data Value Symbol Parameter Unit DPAK Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junctionambient max Rthj-pcb (1) Tl Thermal resistance junction-pcb max IPAK I²PAK TO-220 TO-220FP 1.79 100 5 62.5 50 Maximum lead temperature for soldering purpose °C/W °C/W °C/W 300 °C 1. When mounted on 1inch² FR-4 board, 2 oz Cu Doc ID 15428 Rev 5 3/23 Electrical characteristics 2 STD/F/I/P/U12N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 650 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 4 5 V 0.39 0.43 Ω Min. Typ. Max. Unit - 900 22 2 - pF pF pF - 64 - pF - 21 - pF - 2.5 - Ω - 20 4.8 8.3 - nC nC nC VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 5. Symbol Ciss Coss Crss 3 VGS = 10 V, ID = 4.3 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 VDS = 0 to 520 V, VGS = 0 RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 4.25 A, VGS = 10 V (see Figure 20) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/23 Doc ID 15428 Rev 5 STD/F/I/P/U12N65M5 Table 6. Symbol td (v) tr (v) tf (i) tc(off) Table 7. Electrical characteristics Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 21 and Figure 24) Min. Typ. - 22.6 17.6 15.6 23.4 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 8.5 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8.5 A, di/dt = 100 A/µs VDD = 100 V (see Figure 24) 230 2.2 19 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8.5 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 24) 280 2.7 19 ns µC A trr Qrr IRRM trr Qrr IRRM Test conditions Max. Unit 8.5 34 A A 1.5 V 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15428 Rev 5 5/23 Electrical characteristics STD/F/I/P/U12N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 and Figure 3. I²PAK AM05572v1 D S( on ) O Li per m at ite io d ni by n m this ax a R rea 1 is ID (A) 10 Thermal impedance for TO-220 and I²PAK 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 Figure 4. 10 1 100 Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP !-V ON $ 3 / ,I PER M AT ITE IO D NI BY N M THI AX SA 2 RE A IS )$ ! VDS(V) S S 4J # 4C # Figure 6. 3INLGE PULSE 6$36 Safe operating area for DPAK, IPAK Figure 7. !-V S $ 3 ON / ,I PER M AT ITE IO D NI BY N M THI AX SA 2 RE A IS )$ ! MS MS S MS 4J # 4C # MS 3INLGE PULSE 6/23 6$36 Doc ID 15428 Rev 5 Thermal impedance for DPAK, IPAK STD/F/I/P/U12N65M5 Figure 8. Electrical characteristics Output characteristics Figure 9. AM05575v1 ID (A) VGS=10V Transfer characteristics AM05576v1 ID (A) 14 12 12 10 VDS= 20V 7V 10 8 8 6 6 6V 4 4 2 2 5V 0 0 5 10 20 15 0 0 30 VDS(V) 25 2 4 8 6 VGS(V) 10 Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM05578v1 VGS (V) 600 VDD=520V 12 500 ID=4.25A VDS AM05577v1 RDS(on) (Ω) 0.43 VGS= 10V 0.38 10 400 0.33 8 300 0.28 6 200 4 0.23 0.18 100 2 0 0 10 5 15 20 0 Qg(nC) Figure 12. Capacitance variations 0.13 0.08 0 1 2 3 4 5 6 7 8 9 ID(A) Figure 13. Output capacitance stored energy AM05579v1 C (pF) AM05580v1 Eoss (µJ) 4.0 3.5 1000 Ciss 3.0 2.5 100 2.0 Coss 10 1 0.1 1.5 1.0 Crss 1 10 100 0.5 VDS(V) Doc ID 15428 Rev 5 0 0 100 200 300 400 500 600 VDS(V) 7/23 Electrical characteristics STD/F/I/P/U12N65M5 Figure 14. Normalized gate threshold voltage vs temperature AM05581v1 VGS(th) (norm) 1.10 Figure 15. Normalized on resistance vs temperature AM05501v2 RDS(on) (norm) 2.1 ID= 4.25 A 1.9 1.00 VGS= 10 V 1.7 1.5 1.3 0.90 1.1 0.80 0.9 0.70 -50 -25 0.5 -50 -25 0.7 25 0 50 TJ(°C) 75 100 Figure 16. Source-drain diode forward characteristics 25 50 75 100 125 TJ(°C) Figure 17. Normalized BVDSS @ 1 mA vs temperature AM05584v1 VSD (V) 0 AM05583v1 BVDSS (norm) TJ=-50°C 1.07 1.2 TJ=25°C 1.0 1.05 1.03 0.8 1.01 0.6 0.99 TJ=150°C 0.4 0.97 0.2 0.95 0 0 10 30 20 40 50 ISD(A) 0.93 -50 -25 Figure 18. Switching losses vs gate resistance (1) AM05585v1 E (µJ) 60 Eon ID=5A VDD=400V 50 40 30 Eoff 20 10 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/23 Doc ID 15428 Rev 5 0 25 50 75 100 TJ(°C) STD/F/I/P/U12N65M5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit 6$$ 6 K K N& & 2, & 6'3 )'#/.34 6$$ 6I66'-!8 6$ 2' & $54 $54 6' K 07 K K 07 !-V !-V Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit ! ! $54 &!34 $)/$% " " , ! $ ' 3 6$ ,( & " & $ 6$$ & & 6$$ )$ ' 2' 3 6I $54 0W !-V Figure 23. Unclamped inductive waveform !-V Figure 24. Switching time waveform )NDUCTIVE,OAD4URN OFF 6"2$33 )D 6$ )D 6DS TDV )$6GS 6GS ON )$ 6GS)T 6$$ 6$$ 6DS )D 6DS TRV !-V Doc ID 15428 Rev 5 TFI TCOFF !-V 9/23 Package mechanical data 4 STD/F/I/P/U12N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/23 Doc ID 15428 Rev 5 STD/F/I/P/U12N65M5 Table 8. Package mechanical data DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R V2 0.20 0° 8° Doc ID 15428 Rev 5 11/23 Package mechanical data STD/F/I/P/U12N65M5 Figure 25. DPAK (TO-252) drawing 0068772_H Figure 26. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 a. All dimension are in millimeters 12/23 Doc ID 15428 Rev 5 AM08850v1 STD/F/I/P/U12N65M5 Table 9. Package mechanical data IPAK (TO-251) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 o 10 Doc ID 15428 Rev 5 1.00 13/23 Package mechanical data STD/F/I/P/U12N65M5 Figure 27. IPAK (TO-251) drawing 0068771_H 14/23 AM09214V1 Doc ID 15428 Rev 5 STD/F/I/P/U12N65M5 Table 10. Package mechanical data I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Doc ID 15428 Rev 5 15/23 Package mechanical data STD/F/I/P/U12N65M5 Figure 28. I²PAK (TO-262) drawing 0015988_typeA_Rev_S 16/23 Doc ID 15428 Rev 5 STD/F/I/P/U12N65M5 Table 11. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 15428 Rev 5 17/23 Package mechanical data STD/F/I/P/U12N65M5 Figure 29. TO-220 type A drawing 0015988_typeA_Rev_S 18/23 Doc ID 15428 Rev 5 STD/F/I/P/U12N65M5 Table 12. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 30. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 15428 Rev 5 19/23 Packaging mechanical data 5 STD/F/I/P/U12N65M5 Packaging mechanical data Table 13. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 20/23 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 15428 Rev 5 18.4 22.4 STD/F/I/P/U12N65M5 Packaging mechanical data Figure 31. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 32. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Doc ID 15428 Rev 5 21/23 Revision history 6 STD/F/I/P/U12N65M5 Revision history Table 14. 22/23 Document revision history Date Revision Changes 24-Feb-2009 1 First release 27-Feb-2009 2 Corrected package information on first page 21-Jan-2010 3 Document status promoted from preliminary data to datasheet 29-Jun-2010 4 – Figure 15: Normalized on resistance vs temperature has been updated – VGS vale in Table 4 has been corrected 22-Jun-2011 5 Updated Figure 18 and Figure 20. Updated gate charge in Table 5 and switching time in Table 6. Doc ID 15428 Rev 5 STD/F/I/P/U12N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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