STL40DN3LLH5 Dual N-channel 30 V, 0.016 Ω typ., 11 A STripFET™ V Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet — production data Features Order code VDSS RDS(on) max. ID STL40DN3LLH5 30 V < 0.018 Ω 11 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses PowerFLAT™ 5x6 double island Applications ■ Figure 1. Automotive switching applications Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. Table 1. Device summary Order code Marking Package Packaging STL40DN3LLH5 40DN3LLH5 PowerFLAT™ 5x6 double island Tape and reel December 2012 This is information on a product in full production. Doc ID 18416 Rev 3 1/14 www.st.com 14 Contents STL40DN3LLH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 8 Doc ID 18416 Rev 3 STL40DN3LLH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ± 22 V ID(1) Drain current (continuous) at TC = 25 °C 40 A ID (1) Drain current (continuous) at TC = 100 °C 26 A ID(2) Drain current (continuous) at TC = 25 °C 11 A Drain current (continuous) at TC=100°C 7 A Drain current (pulsed) 44 A PTOT (1) Total dissipation at TC = 25°C 60 W (2) Total dissipation at TC = 25°C 4 W 0.03 W/°C -55 to 150 °C Value Unit 2.08 °C/W 32 °C/W ID (2) IDM(3) PTOT Derating factor TJ Operating junction temperature Storage temperature Tstg 1. The value is rated according Rthj-c 2. The value is rated according Rthj-pcb 3. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Rthj-case Rthj-pcb (1) Parameter Thermal resistance junction-case drain, steady state Thermal resistance junction-ambient 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Doc ID 18416 Rev 3 3/14 Electrical characteristics 2 STL40DN3LLH5 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 5.5 A Symbol Ciss Coss Crss Qg Qgs Qgd Min. Typ. Max. 30 VDS = 30 V @125 °C 1 VGS= 4.5 V, ID= 5.5 A Unit V VDS = 30 V, IDSS Table 5. 4/14 On/off states 1 10 µA µA ±100 nA 1.5 V 0.016 0.02 0.018 0.025 Ω Ω Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. Max. Unit VDS =25 V, f=1 MHz, VGS=0 - 475 97 19 - pF pF pF - 4.5 1.7 1.9 - nC nC nC VDD=15 V, ID = 11 A VGS =4.5 V (see Figure 13) Doc ID 18416 Rev 3 STL40DN3LLH5 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. Unit - 4 22 13 2.8 - ns ns ns ns Min. Typ. Max. Unit VDD=15 V, ID= 11 A, RG=4.7 Ω, VGS=10 V (see Figure 12) Source drain diode Parameter Test conditions Source-drain current - 11 A ISDM(1) Source-drain current (pulsed) - 44 A VSD(2) Forward on voltage ISD = 11 A, VGS=0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11 A, trr Qrr IRRM di/dt = 100 A/µs, VDD=25 V, Tj=150 °C - 16.2 1 8.1 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 18416 Rev 3 5/14 Electrical characteristics STL40DN3LLH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. AM14982v1 ID (A) 100 Thermal impedance Tj=150°C Tc=25°C Single pulse is rea is a S(on) in th RD tion max y era Op ited b Lim Zth_PCB_PowerFLAT K 10 0 δ=0.5 0.2 -1 10 0.1 0.05 10 -2 10ms 10 0.02 0.01 -3 10 1 100ms 1s -4 10 0.1 -5 10 Figure 4. Single pulse -6 0.01 0.1 10 1 10 -5 10 VDS(V) Output characteristics Figure 5. AM14983v1 ID (A) -4 10 VGS=10V -3 10 -2 10 -1 10 10 0 10 1 10 2 Transfer characteristics AM14984v1 ID (A) 70 35 60 30 tp (s) VDS=4V 5V 25 50 4V 40 20 15 30 10 20 3V 5 10 0 0 Figure 6. 1 2 3 0 4 VDS(V) Normalized BVDSS vs temperature AM14985v1 BVDSS (norm) ID=1mA 2 Figure 7. 3 4 VGS(V) Static drain-source on-resistance AM14986v1 RDS(on) (mΩ) 1.10 15 1.05 VGS=10V 1.00 10 0.95 5 0.90 0.85 -50 -25 6/14 0 25 50 75 100 125 150 TJ(°C) Doc ID 18416 Rev 3 0 0 5 10 15 20 25 ID(A) STL40DN3LLH5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM14987v1 VGS (V) VDD=15V ID=11A 12 Capacitance variations AM14988v1 C (pF) 810 710 10 610 8 510 6 410 Ciss 310 4 210 2 Coss 110 0 0 1 2 3 4 6 7 AM14989v1 VGS(th) 10 100 VDS(V) Figure 11. Normalized on-resistance vs temperature AM14990v1 RDS(on) (norm) ID=250µA 1.2 0 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature (norm) Crss 10 5 VGS=10V ID=5.5A 1.8 1.1 1.6 1.0 1.4 0.9 1.2 0.8 1.0 0.7 0.6 0.8 0.5 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ(°C) 0.4 -50 -25 Doc ID 18416 Rev 3 0 25 50 75 100 125 150 TJ(°C) 7/14 Test circuits 3 STL40DN3LLH5 Test circuits Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 16. Unclamped inductive waveform AM01471v1 Figure 17. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/14 0 Doc ID 18416 Rev 3 10% AM01473v1 STL40DN3LLH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 18416 Rev 3 9/14 Package mechanical data Table 8. STL40DN3LLH5 PowerFLAT™ 5x6 - 8 leads dual pad (ribbon) mechanical data Dimensions (mm) Ref. Min. Typ. A 0.80 1.00 A1 0.02 0.05 A2 b 0.25 0.30 0.50 D 5.20 E 6.15 D2 1.68 1.88 E2 3.50 3.70 D3 1.68 1.88 E3 3.50 3.70 E4 0.55 0.75 e 10/14 Max. 1.27 L 0.50 0.80 K 1.275 1.575 Doc ID 18416 Rev 3 STL40DN3LLH5 Package mechanical data Figure 18. PowerFLAT™ 5x6 - 8 leads dual pad drawing (dimensions are in mm) Bottom view Side view Top view 8256945_Rev.E_ribbon Doc ID 18416 Rev 3 11/14 Package mechanical data STL40DN3LLH5 Figure 19. PowerFLAT™ 5x6 - 8 leads dual pad (ribbon) drawing recommended footprint (dimensions are in mm) Footprint_ribbon 12/14 Doc ID 18416 Rev 3 STL40DN3LLH5 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 24-Jan-2011 1 First release. 03-Oct-2012 2 Section 2.1: Electrical characteristics (curves) has been added. Document status promoted from preliminary data to datasheet. Minor text changes. 14-Dec-2012 3 Modified the Applications section on the coverpage to "Automotive switching applications". Doc ID 18416 Rev 3 13/14 STL40DN3LLH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 Doc ID 18416 Rev 3