STN3P6F6 P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT-223 package Datasheet - production data Features 4 1 2 Order code VDSS RDS(on)max ID STN3P6F6 60 V 0.16 Ω @ 10 V 3A • RDS(on) * Qg industry benchmark 3 • Extremely low on-resistance RDS(on) • High avalanche ruggedness SOT-223 • Low gate drive power losses Applications • Switching applications Figure 1. Internal schematic diagram Description This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. D (2, 4) G (1) S (3) Table 1. Device summary Order code Marking Package Packaging STN3P6F6 STN3P6F6 SOT-223 Tape and reel Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. March 2013 This is information on a product in full production. DocID023758 Rev 4 1/12 www.st.com 12 Contents STN3P6F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ............................................... 8 DocID023758 Rev 4 STN3P6F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at Tpcb = 25 °C 3 A ID Drain current (continuous) at Tpcb = 100 °C 2 A Drain current (pulsed) 12 A Total dissipation at Tpcb = 25 °C 2.6 W Operating junction temperature Storage temperature -55 to 175 °C Value Unit 57 °C/W IDM PTOT (1) Tj Pstg 1. Pulse width is limited by safe operating area. Table 3. Thermal data Symbol Parameter Rthj-pcb(1) Thermal resistance junction-pcb max 1. When mounted on FR-4 board of 15 Note: mm2, 2 Oz Cu, t<10 sec For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed. DocID023758 Rev 4 3/12 Electrical characteristics 2 STN3P6F6 Electrical characteristics (Tcase = 25 °C unless otherwise specified). Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage (VGS = 0) Test conditions ID = 250 µA IDSS Zero gate voltage VDS = 60 V drain current (VGS = 0) VDS = 60 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. 60 Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 1.5 A resistance Unit V 1 10 µA µA ±100 nA 4 V 0.13 0.16 Ω Min. Typ. Max. Unit - pF pF pF VGS = ± 20 V VGS(th) Max. 2 Table 5. Dynamic Symbol Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 48 V, f = 1 MHz, VGS = 0 - 340 40 20 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 48 V, ID = 3 A, VGS = 10 V (see Figure 14) - 6.4 1.7 1.7 - nC nC nC Min. Typ. Max. Unit - 6.4 5.3 14 3.7 - ns ns ns ns Table 6. Switching times Symbol td(on) tr td(off) tf Note: 4/12 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 48 V, ID = 1.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13) For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed. DocID023758 Rev 4 STN3P6F6 Electrical characteristics Table 7. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current trr Qrr IRRM Test conditions Min. Typ. Max. Unit - 3 12 A A ISD = 3 A, VGS = 0 - 1.1 V ISD = 5 A, di/dt = 100 A/µs VDD = 16 V, Tj = 150 °C (see Figure 15) - 20 17.8 1.8 ns nC A 1. Pulse width limited by safe operating area. 2. Pulse duration = 300 µs, duty cycle 1.5% Note: For the P-channel Power MOSFET actual polarity of voltages and current has to be reversed. DocID023758 Rev 4 5/12 Electrical characteristics 2.1 STN3P6F6 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15339v1 ID (A) is ea n) ar is DS(o h t in ax R ion m at by r e d Op ite Lim 10 10ms 1 pcb 100ms Tj=175°C Tc=25°C 0.1 1s Single pulse 0.01 0.1 10 1 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM15340v1 ID (A) VGS= 10 V AM15346v1 ID (A) VDS= 9 V 25 25 VGS= 6 V 20 20 15 15 VGS= 5 V 10 10 5 5 VGS= 4 V 0 0 5 0 10 VDS(V) Figure 6. Gate charge vs gate-source voltage AM15341v1 VGS (V) VDD=30V 10 ID=3A 2 3 4 5 6 7 8 9 10 VGS(V) Figure 7. Static drain-source on-resistance AM15350v1 RDS(on) (mΩ) VGS=10V 180 8 160 6 140 4 120 2 0 0 6/12 2 4 6 Qg(nC) 100 1 DocID023758 Rev 4 2 3 4 5 6 7 8 9 ID(A) STN3P6F6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized BVDSS vs temperature C (pF) 400 AM15342v1 350 Ciss AM15349v1 VDS (norm) 1.15 ID = 1mA 1.10 300 250 1.05 200 1 150 100 0.95 50 0 0 20 10 30 Coss Crss 50 VDS(V) 40 Figure 10. Normalized gate threshold voltage vs temperature AM15344v1 VGS(th) (norm) 0.90 -55 -30 -5 20 45 70 95 120 TJ(°C) Figure 11. Normalized on-resistance vs temperature AM15350v1 RDS(on) (norm) 2 1.10 VGS=10V 1.8 ID=250 µA 1 1.6 1.4 0.90 1.2 0.80 1 0.8 0.70 0.6 0.60 -55 -30 -5 20 45 70 95 120 TJ(°C) 0.4 -55 -30 -5 20 45 70 95 120 TJ(°C) Figure 12. Source-drain diode forward characteristics AM15345v1 VSD (V) TJ=-55°C 1.05 TJ=25°C 0.95 0.85 0.75 TJ=175°C 0.65 0.55 2 4 6 8 ISD(A) DocID023758 Rev 4 7/12 Test circuits 3 STN3P6F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load switching and diode recovery times 8/12 DocID023758 Rev 4 STN3P6F6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID023758 Rev 4 9/12 Package mechanical data STN3P6F6 Table 8. SOT-223 mechanical data mm Dim. Min. Typ. A Max. 1.80 A1 0.02 0.1 B 0.60 0.70 0.85 B1 2.90 3.00 3.15 c 0.24 0.26 0.35 D 6.30 6.50 6.70 e 2.30 e1 4.60 E 3.30 3.50 3.70 H 6.70 7.00 7.30 V 10° Figure 16. SOT-223 mechanical data drawing 0046067_M 10/12 DocID023758 Rev 4 STN3P6F6 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 31-Oct-2012 1 First release. 09-Nov-2012 2 Modified: note 1 in Table 3 16-Jan-2013 3 Document status promoted from preliminary data to production data 14-Mar-2013 4 Modified: Figure 1, 3, Ciss, Coss, Crss typical values in Table 5 DocID023758 Rev 4 11/12 STN3P6F6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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