STMICROELECTRONICS STP10NM50N

STD10NM50N
STF10NM50N, STP10NM50N
N-channel 500 V, 0.53 Ω, 7 A DPAK, TO-220FP, TO-220
MDmesh™ II Power MOSFET
Features
VDSS
(@Tjmax)
Type
TAB
RDS(on)
max
ID
3
1
STD10NM50N
STF10NM50N
550 V
< 0.63 Ω
3
1
DPAK
7A
2
TO-220FP
TAB
STP10NM50N
■
100% avalanche tested
■
Low input capacitance and gate charge
3
1
■
Low gate input resistance
2
TO-220
Applications
■
Switching applications
Figure 1.
Internal schematic diagram
Description
$4!"
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
'
3
!-V
Table 1.
Device summary
Order codes
Marking
Packages
Packaging
DPAK
Tape and reel
STD10NM50N
STF10NM50N
10NM50N
TO-220FP
Tube
STP10NM50N
October 2011
TO-220
Doc ID 16929 Rev 3
1/18
www.st.com
18
Contents
STD10NM50N, STF10NM50N, STP10NM50N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
.............................................. 9
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
DPAK, TO-220
TO-220FP
VDS
Drain-source voltage
500
V
VGS
Gate- source voltage
± 25
V
7
7 (1)
A
5
5
(1)
A
Drain current (pulsed)
28
28 (1)
A
PTOT
Total dissipation at TC = 25 °C
70
25
W
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
ID
IDM
(2)
dv/dt (3)
Tstg
Peak diode recovery voltage slope
Storage temperature
15
V/ns
- 55 to 150
°C
150
°C
Max. operating junction temperature
Tj
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area
3. ISD
≤ 7 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDSpeak ≤V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
DPAK
Rthj-case
Thermal resistance junction-case max
TO-220 TO-220FP
1.79
5
°C/W
Rthj-pcb (1)
Thermal resistance junction-pcb minimum
footprint
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
50
°C/W
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
Symbol
Avalanche characteristics
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Doc ID 16929 Rev 3
Value
Unit
2
A
143
mJ
3/18
Electrical characteristics
2
STD10NM50N, STF10NM50N, STP10NM50N
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
Drain-source
V(BR)DSS breakdown voltage
(VGS = 0)
ID = 1 mA
Min.
Typ.
Max. Unit
500
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 500 V
VDS = 500 V, TC = 125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
0.1
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 3.5 A
0.53
0.63
Ω
Min.
Typ.
Max. Unit
Table 6.
Symbol
2
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
450
38
1.3
-
pF
pF
pF
Equivalent output
catacitance
VGS = 0, VDS = 0 to 400 V
-
167
-
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 7 A,
VGS = 10 V,
(see Figure 18)
-
17
3.3
8.5
-
nC
nC
nC
Rg
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
-
4.7
-
Ω
Ciss
Coss
Crss
Coss eq.(1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
4/18
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
Table 7.
Symbol
td(on)
tr
td(off)
tf
Table 8.
Electrical characteristics
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 250 V, ID = 3.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 17)
Min.
Typ.
Max. Unit
-
7.8
4.4
7.8
12
-
ns
ns
ns
ns
Min
Typ.
Max
Unit
-
7
28
A
A
1.3
V
Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 7 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 22)
-
177
1.4
16
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 22)
-
216
1.7
15.4
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 16929 Rev 3
5/18
Electrical characteristics
STD10NM50N, STF10NM50N, STP10NM50N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for DPAK
Thermal impedance for DPAK
Figure 5.
Thermal impedance for TO-220FP
Figure 7.
Thermal impedance for TO-220
AM08150v1
ID
(A)
is
10µs
D
S(
on
)
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
10
Figure 3.
1
100µs
1ms
10ms
0.1
0.01
0.1
Figure 4.
Tj=150°C
Tc=25°C
Single pulse
10
1
100
VDS(V)
Safe operating area for TO-220FP
AM08151v1
ID
(A)
10µs
)
on
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
1
100µs
1ms
10ms
0.1
0.01
0.1
Figure 6.
Tj=150°C
Tc=25°C
Single pulse
10
1
100
Safe operating area for TO-220
AM08149v1
ID
(A)
)
10µs
D
S(
on
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
1
VDS(V)
100µs
1ms
10ms
0.1
0.01
0.1
6/18
Tj=150°C
Tc=25°C
Single pulse
1
10
100
VDS(V)
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
Figure 8.
Electrical characteristics
Output characteristics
Figure 9.
AM08152v1
ID (A)
VGS=10V
Transfer characteristics
AM08153v1
ID
(A)
VDS=20V
12
12
6V
10
10
8
8
6
6
4
4
5V
2
2
0
0
5
10
20
15
30
25
0
0
VDS(V)
2
4
8
6
10 VGS(V)
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
AM08154v1
VGS
(V)
VDS
VDD=400V
ID=7A
12
450
AM08155v1
RDS(on)
(Ω)
VGS=10V
400
0.55
350
10
300
8
250
6
200
0.54
0.53
150
4
100
2
0.52
0.51
50
0
0
10
5
15
0
25 Qg(nC)
20
Figure 12. Capacitance variations
2
4
6
ID(A)
Figure 13. Output capacitance stored energy
AM08156v1
C
(pF)
0.50
0
AM08157v1
Eoss
(µJ)
16
1000
Ciss
14
12
100
10
8
Coss
10
6
4
2
1
0.1
1
10
100
Crss
VDS(V)
Doc ID 16929 Rev 3
0
0
100
200 300
400 500 600
VDS(V)
7/18
Electrical characteristics
STD10NM50N, STF10NM50N, STP10NM50N
Figure 14. Normalized gate threshold voltage
vs temperature
AM08158v1
VGS(th)
(norm)
Figure 15. Normalized on resistance vs
temperature
AM08159v1
RDS(on)
(norm)
1.10
ID=250µA
2.1
1.9
ID = 3.5 A
1.00
1.7
1.5
0.90
1.3
1.1
0.80
0.9
0.7
0.70
-50 -25
0
25
50
75 100
TJ(°C)
0.5
-50 -25
Figure 16. Normalized BVDSS vs temperature
AM09028v1
VDS
(norm)
ID=1mA
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25
8/18
0
25
50
75 100
TJ(°C)
Doc ID 16929 Rev 3
0
25
50
75 100
TJ(°C)
STD10NM50N, STF10NM50N, STP10NM50N
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 19. Test circuit for inductive load
Figure 20. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 21. Unclamped inductive waveform
AM01471v1
Figure 22. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 16929 Rev 3
10%
AM01473v1
9/18
Package mechanical data
4
STD10NM50N, STF10NM50N, STP10NM50N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 9.
DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
1.50
L1
2.80
L2
0.80
L4
0.60
1
R
V2
10/18
Max.
0.20
0°
8°
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
Package mechanical data
Figure 23. DPAK (TO-252) drawing
0068772_H
Figure 24. DPAK footprint(a)
6.7
1.8
3
1.6
2.3
6.7
2.3
1.6
AM08850v1
a. All dimension are in millimeters
Doc ID 16929 Rev 3
11/18
Package mechanical data
Table 10.
STD10NM50N, STF10NM50N, STP10NM50N
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Figure 25. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_K
12/18
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
Table 11.
Package mechanical data
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 16929 Rev 3
13/18
Package mechanical data
STD10NM50N, STF10NM50N, STP10NM50N
Figure 26. TO-220 type A drawing
0015988_typeA_Rev_S
14/18
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
5
Packaging mechanical data
Packaging mechanical data
Table 12.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
Doc ID 16929 Rev 3
18.4
22.4
15/18
Packaging mechanical data
STD10NM50N, STF10NM50N, STP10NM50N
Figure 27. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
W
K0
B0
For machine ref. only
including draft and
radii concentric around B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 28. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
16/18
Doc ID 16929 Rev 3
STD10NM50N, STF10NM50N, STP10NM50N
6
Revision history
Revision history
Table 13.
Document revision history
Date
Revision
16-Dec-2009
1
First release.
08-Sep-2010
2
Document status promoted from preliminary data to datasheet.
3
Updated VDSS (@Tjmax) in cover page.
Updated Section 4: Package mechanical data and Section 5:
Packaging mechanical data.
Minor text changes.
26-Oct-2011
Changes
Doc ID 16929 Rev 3
17/18
STD10NM50N, STF10NM50N, STP10NM50N
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18/18
Doc ID 16929 Rev 3