STMICROELECTRONICS STP3NK90ZFP

STD3NK90Z, STP3NK90Z, STP3NK90ZFP
N-channel 900 V, 4.1 Ω typ., 3 A Zener-protected SuperMESH™
Power MOSFET in DPAK, TO-220 and TO-220FP packages
Datasheet − production data
Features
4!"
TAB
Order codes
VDS
RDS(on)
ID
PTOT
2 3
1
STD3NK90ZT4
STP3NK90Z
900 V
4.8 Ω
3A
STP3NK90ZFP
■
Extremely high dv/dt capability
■
100% avalanche tested
■
Gate charge minimized
90 W
TO-220
25 W
3
■
Very good manufacturing repeatability
■
Very low intrinsic capacitances
1
2
TO-220FP
Applications
■
DPAK
Figure 1.
Internal schematic diagram
, TAB
Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
SC15010
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STD3NK90ZT4
D3NK90Z
DPAK
Tape and reel
STP3NK90Z
P3NK90Z
TO-220
STP3NK90ZFP
P3NK90ZFP
TO-220FP
Tube
January 2013
This is information on a product in full production.
Doc ID 9193 Rev 2
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www.st.com
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
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Doc ID 9193 Rev 2
STD3NK90Z, STP3NK90Z, STP3NK90ZFP
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
DPAK, TO-220
TO-220FP
VDS
Drain-source voltage
900
V
VGS
Gate-source voltage
± 30
V
ID
ID
IDM
(2)
PTOT
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
1.89
dv/dt (3)
VISO
1.89
12
(1)
(1)
A
A
Drain current (pulsed)
12
Total dissipation at TC = 25°C
90
25
W
0.72
0.2
W/°C
Derating factor
ESD
3 (1)
3
Gate-source human body model (R=1,5
kΩ, C=100 pF)
Peak diode recovery voltage slope
A
4
kV
4.5
V/ns
Insulation withstand voltage (RMS) from
all threeleads to external heat sink
2500
V
(t=1s;TC=25°C)
Tj
Tstg
Operating junction temperature
Storage temperature
-55 to 150
°C
1. Limited by maximum junction temperature
2.
Pulse width limited by safe operating area
3. ISD < 3A, di/dt < 200A/µs, VDD =80% V(BR)DSS
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case max
Rthj-amb
Thermal resistance junction-amb max
Rthj-pcb(1)
Thermal resistance junction-pcb max
DPAK
TO-220
TO-220FP
Unit
5
°C/W
1.38
62.5
50
°C/W
°C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
Symbol
Avalanche characteristics
Parameter
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting Tj=25°C, ID=IAR, VDD= 50V)
Doc ID 9193 Rev 2
Max value
Unit
3
A
180
mJ
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Electrical characteristics
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source breakdown
ID = 1 mA, VGS= 0
voltage
Min.
Typ.
Max.
Unit
900
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 900 V
VDS = 900 V, Tj=125 °C
1
50
µA
µA
IGSS
Gate body leakage
current (VDS = 0)
VGS = ±20 V, VDS = 0
±10
µA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 50 µA
3.75
4.5
V
RDS(on)
Static drain-source onresistance
VGS= 10 V, ID= 1.5 A
4.1
4.8
Ω
Min.
Typ.
Max.
Unit
Table 6.
Symbol
3
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS =15 V, ID = 1.5 A
-
2.7
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
-
590
63
13
-
pF
pF
pF
Equivalent ouput
capacitance
VGS=0, VDS =0 V to 400 V
-
34
-
pF
Total gate charge
Gate-source charge
Gate-drain charge
VDD=720 V, ID = 3 A
VGS =10 V see (Figure 18)
-
22.7
4.2
12
-
nC
nC
nC
Coss eq(2)
Qg
Qgs
Qgd
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
Table 7.
Symbol
4/20
Switching times
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=450 V, ID= 1.5 A,
RG=4.7 Ω, VGS=10 V
see (Figure 17)
-
18
7
-
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=720 V, ID= 1.5 A,
RG=4.7 Ω, VGS=10 V
see (Figure 17)
-
45
18
-
ns
ns
Doc ID 9193 Rev 2
STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Table 8.
Source drain diode
Symbol
Parameter
ISD
ISDM(1)
Source-drain current
Source-drain current (pulsed)
VSD(2)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Electrical characteristics
Test conditions
Min.
Typ.
Max. Unit
-
3
12
A
A
ISD = 3 A, VGS = 0
-
1.6
V
ISD= 3 A, di/dt = 100A/µs,
VDD=40 V, Tj=150°C
(Figure 22)
-
510
2.2
8.7
Min.
Typ.
30
-
ns
µC
A
1. Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 9.
Symbol
V(BR)GSO
Gate-source zener diode
Parameter
Gate-source breakdown
voltage
Test conditions
IGS=± 1 mA, ID=0
Max. Unit
-
V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for DPAK and
TO-220
Figure 3.
Thermal impedance for DPAK and
TO-220
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Output characterisics
Figure 7.
Transfer characteristics
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Figure 8.
Transconductance
Electrical characteristics
Figure 9.
Static drain-source on-resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on-resistance vs
temperature
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Electrical characteristics
Figure 14. Source-drain diode forward
characteristics
Figure 15. Maximum avalanche energy vs
temperature
Figure 16. Normalized BVDSS vs temperature
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
Figure 20. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/20
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Table 10.
Package mechanical data
DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
0.80
L4
0.60
1
R
V2
0.20
0°
8°
Doc ID 9193 Rev 2
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Package mechanical data
Figure 23. DPAK (TO-252) drawing
0068772_I
Figure 24. DPAK footprint (a)
6.7
1.8
3
1.6
2.3
6.7
2.3
1.6
a. All dimensions are in millimeters
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AM08850v1
STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Table 11.
Package mechanical data
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Package mechanical data
Figure 25. TO-220 type A drawing
0015988_typeA_Rev_S
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Table 12.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Package mechanical data
Figure 26. TO-220FP drawing
7012510_Rev_K_B
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5
Packaging mechanical data
Packaging mechanical data
Table 13.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
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22.4
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Packaging mechanical data
Figure 27. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
W
K0
B0
For machine ref. only
including draft and
radii concentric around B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 28. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
6
Revision history
Revision history
Table 14.
Document revision history
Date
Revision
24-Oct-2006
1
First release.
2
– The part number STD3NK90Z-1 has been moved to a separate
datasheet
– Minor text changes
– Updated: Section 4: Package mechanical data
29-Jan-2013
Changes
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STD3NK90Z, STP3NK90Z, STP3NK90ZFP
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