STP9NK65Z STP9NK65ZFP N-channel 650 V - 1 Ω - 6.4 A TO-220 / TO-220FP Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) ID Pw STP9NK65ZFP 650 V < 1.2 Ω 6.4 A 125 W STP9NK65Z 650 V < 1.2 Ω 6.4 A 30 W ■ Extremely high dv/dt capability ■ 100% avalanche tested 3 1 ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability TO-220 3 2 1 2 TO-220FP Application ■ Switching applications Figure 1. Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Table 1. Device summary Order codes Marking Package Packaging STP9NK65ZFP P9NK65ZFP TO-220FP Tube STP9NK65Z P9NK65Z TO-220 Tube December 2007 Rev 3 1/15 www.st.com 15 Contents STP9NK65Z - STP9NK65ZFP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/15 .............................................. 9 STP9NK65Z - STP9NK65ZFP 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 TO-220FP VDS Drain-source voltage (VGS = 0) 650 VGS Gate- source voltage ± 30 ID ID Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C 6.4 V V 6.4 (1) A 4 4(1) A IDM (2) Drain current (pulsed) 25.6 25.6 (1) A PTOT Total dissipation at TC = 25 °C 125 30 W 1 0.24 W/°C Derating factor VESD(G-S) Gate source ESD(HBM-C=100 pF, R=1.5 kΩ) dv/dt (3) Peak diode recovery voltage slope VISO Insulation withstand voltage (DC) Tj Tstg Operating junction temperature Storage temperature 4000 V 4.5 V/ns - 2500 -55 to 150 -55 to 150 V °C °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 6.4 A, di/dt ≤ 200 A/µs, VDD ≤ 80%V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-220FP 1 4.2 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Value Unit Tl Table 4. Symbol °C/W Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) 6.4 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAR, VDD=50 V) 200 mJ 3/15 Electrical characteristics 2 STP9NK65Z - STP9NK65ZFP Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. 650 Unit V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, @125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±10 µA 3.75 4.5 V 1 1.2 Ω Typ. Max. Unit VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA RDS(on) Static drain-source on VGS = 10 V, ID = 3.2 A resistance Table 6. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Qg Qgd Test conditions Min. Forward transconductance VDS = 15 V, ID = 3.2 A 6 Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1145 130 28 Coss eq(2). Equivalent output capacitance Qgs 3 Total gate charge Gate-source charge Gate-drain charge S pF pF pF VGS = 0, VDS = 0 to 400 V 55 pF VDD = 520 V, ID = 6.4 A, VGS = 10 V (see Figure 18) 41 7.5 22 nC nC nC 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/15 STP9NK65Z - STP9NK65ZFP Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Electrical characteristics Switching times Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time Rise time VDD = 325 V, ID = 3.2 A RG = 4.7 Ω VGS = 10 V (see Figure 17) 20 12 ns ns Turn-off delay time Fall time VDD = 325 V, ID = 3.2 A RG = 4.7 Ω VGS = 10 V (See Figure 17) 45 15 ns ns Source drain diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 6.4 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 6.4 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150 °C (see Figure 19) Max. Unit 6.4 25.6 A A 1.6 V 400 2600 13 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 9. Symbol Gate-source zener diode Parameter BVGSO(1) Gate-source breakdown voltage Test conditions Igs=±1 mA (open drain) Min. Typ. Max. Unit 30 V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 5/15 Electrical characteristics STP9NK65Z - STP9NK65ZFP 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/15 STP9NK65Z - STP9NK65ZFP Figure 8. Transconductance Electrical characteristics Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature 7/15 Electrical characteristics Figure 14. Source-drain diode forward characteristics Figure 16. Maximum avalanche energy vs temperature 8/15 STP9NK65Z - STP9NK65ZFP Figure 15. Normalized BVDSS vs temperature STP9NK65Z - STP9NK65ZFP 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform 9/15 Package mechanical data 4 STP9NK65Z - STP9NK65ZFP Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/15 STP9NK65Z - STP9NK65ZFP Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/15 Package mechanical data STP9NK65Z - STP9NK65ZFP TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L5 L3 L6 F2 H G G1 F F1 L7 L2 12/15 L5 1 2 3 L4 STP9NK65Z - STP9NK65ZFP Package mechanical data TO-220FP(040Y) MECHANICAL DATA DIM. mm. MIN. A 4.4 TYP inch MAX. MIN. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.009 0.106 C 1 1.4 0.039 0.055 D 2.4 2.75 0.094 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.029 0.039 F1 1.15 1.7 0.045 0.066 0.215 G 4.68 5.48 0.184 G1 2.24 2.84 0.088 0.111 H 10 10.4 0.393 0.409 L1 18.4 19.2 0.724 L2 L4 16 15.3 L5 0.755 0.629 16.1 0.602 3.4 0.633 0.133 L6 15.9 16.4 0.625 L7 9 9.3 0.354 0.665 0.366 L8 22.5 23.6 0.885 0.929 M 4.6 5.4 0.181 0.212 N 2.29 3.29 0.090 0.129 Dia 3 3.2 R 0.5 0.019 1 13/15 Revision history 5 STP9NK65Z - STP9NK65ZFP Revision history Table 10. 14/15 Document revision history Date Revision Changes 11-Sep-2006 2 Complete version 19-Dec-2007 3 The document has been reformatted STP9NK65Z - STP9NK65ZFP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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