STMICROELECTRONICS STPS2530CG-TR

STPS2530C
®
LOW DROP POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
2 x 12.5 A
VRRM
30 V
Tj
150°C
VF(max)
0.45 V
K
FEATURES AND BENEFITS
■
■
■
■
■
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop for higher efficiency
Low thermal resistance
A2
A1
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Table 2: Order Codes
Part Numbers
STPS2530CG
STPS2530CG-TR
DESCRIPTION
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Dual Schottky rectifier suited for switch Mode
Power Supply and high frequency DC to DC converters.
Packaged in D2PAK, this device is intended for
use in low voltage high frequency inverters, free
wheeling and polarity protection applications.
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D2PAK
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Marking
STPS2530CG
STPS2530CG
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
o
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P
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du
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
30
V
IF(RMS)
RMS forward voltage
30
A
Per diode
Per device
12.5
25
A
180
A
IF(AV)
Average forward current
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
IRRM
Peak repetitive reverse current
tp = 2 µs square F=1kHz
1
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
2
A
PARM
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
3000
W
-65 to + 150
°C
150
°C
10000
V/µs
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Tstg
Tj
dV/dt
Tc = 140°C
δ = 0.5
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage (rated VR, Tj = 25°C)
dPtot
1
* : --------------- > -------------------------- thermal runaway condition for a diode on its own heatsink
dTj
Rth ( j – a )
April 2005
REV. 1
1/5
STPS2530C
Table 4: Thermal Parameters
Symbol
Parameter
Rth(j-c)
Junction to case
Rth(c)
Coupling
Value
2.2
1.3
0.3
Per diode
Total
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 5: Static Electrical Characteristics (per diode)
Symbol
Parameter
Tests conditions
Tj = 25°C
VR = VRRM
Reverse leakage current
Tj = 125°C
Tj = 25°C
IF = 12.5A
Tj = 125°C
Forward voltage drop
Tj = 25°C
IF = 25A
Tj = 125°C
IR *
VF **
Min.
Typ
0.15
80
0.47
0.39
0.54
0.49
Max.
1.0
160
0.53
0.45
0.64
0.59
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
Pulse test:
δ = 0.2
δ = 0.5
10
δ = 0.05
5
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11
δ = 0.1
V
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Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
IF(AV)(A)
PF(AV)(W)
6
mA
c
u
d
2
To evaluate the conduction losses use the following equation: P = 0.31 x IF(AV) + 0.0112 IF (RMS)
Figure 1: Conduction losses versus average
current
Unit
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9
Rth(j-a)=Rth(j-c)
8
δ=1
4
7
6
3
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2
4
3
T
1
IF(AV)(A)
0
0
1
2
o
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P
e
3
4
5
6
7
du
8
9
δ=tp/T
10
Figure 3: Normalized avalanche
derating versus pulse duration
t
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11
2
1
tp
12
Tamb(°C)
0
13
power
0
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25
50
75
100
125
Figure 4: Normalized avalanche
derating versus junction temperature
PARM(tp)
PARM(1µs)
1
Rth(j-a)=50°C/W
5
150
power
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.4
0.01
0.2
0.001
0.01
2/5
Tj(°C)
tp(µs)
0.1
1
0
10
100
1000
25
50
75
100
125
150
STPS2530C
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values)
Figure 6: Relative variation of thermal
impedance junction to case versus pulse
duration
IM(A)
Zth(j-c)/Rth(j-c)
175
1.0
0.9
150
0.8
125
0.7
δ = 0.5
0.6
100
Ta=25°C
0.5
75
Ta=75°C
50
0.4
δ = 0.2
0.3
δ = 0.1
Ta=125°C
IM
25
T
0.2
Single pulse
t
0.1
t(s)
δ=0.5
tp(s)
1.E-03
1.E-02
1.E-01
1.E+00
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values)
1.E-03
1.E-02
ro
Tj=150°C
P
e
let
1.E+02
Tj=125°C
Tj=100°C
Tj=75°C
1.E+00
1.0
Tj=50°C
1.E-01
Tj=25°C
1.E-02
VR(V)
1.E-03
5
10
15
20
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(t s)
25
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bs
10
100
Figure 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy
printed board FR4, Cu = 35µm)
Rth(j-a)(°C/W)
80
70
Tj=125°C
(maximum values)
60
Tj=25°C
(maximum values)
Tj=125°C
(typical values)
O
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
1
30
t
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IFM(A)
100
)
s
t(
0.1
Figure 9: Forward voltage drop versus forward
current
o
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e
1.E+00
c
u
d
C(pF)
10.0
1.E+01
tp
1.E-01
Figure 8: Junction capacitance versus reverse
voltage applied (typical values)
IR(mA)
1.E+03
0
δ=tp/T
0.0
0
50
40
10
30
20
10
VFM(V)
S(mm²)
1
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
35
40
3/5
STPS2530C
Figure 11: D2PAK Package Mechanical Data
REF.
A
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
Figure 12:Foot Print Dimensions (in millimeters)
16.90
)
s
(
ct
10.30
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
2.49
2.69
0.098
0.106
0.03
0.23
0.001
0.009
0.70
0.93
0.027
0.037
1.14
1.70
0.045
0.067
0.45
0.60
0.017
0.024
1.23
1.36
0.048
0.054
8.95
9.35
0.352
0.368
10.00
10.40
0.393
0.409
4.88
5.28
0.192
0.208
15.00
15.85
0.590
0.624
1.27
1.40
0.050
0.055
1.40
1.75
0.055
0.069
2.40
3.20
0.094
0.126
0.40 typ.
0.016 typ.
0°
8°
0°
8°
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5.08
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1.30
3.70
8.90
t
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Table 6: Ordering Information
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Ordering type
Marking
STPS2530CG
STPS2530CG
STPS2530CG-TR
STPS2530CG
■
Package
Weight
D2PAK
1.48 g
Base qty
Delivery mode
50
Tube
1000
Tape & reel
Epoxy meets UL94, V0
Table 7: Revision History
4/5
Date
Revision
16-Apr-2005
1
Description of Changes
First issue.
STPS2530C
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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