STPS40M80C Power Schottky rectifier Features A1 K ■ High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified A2 K K A2 A2 A1 Description K A1 D2PAK STPS40M80CG-TR I2PAK This dual diode Schottky rectifier is suited for high frequency switch mode power supply. STPS40M80CR K Packaged in TO-220AB, I2PAK and D2PAK, this device is particularly suited for use in notebook, game station, LCD TV and desktop adapters, providing these applications with a good efficiency at both low and high load. Table 1. A2 A1 K TO-220AB STPS40M80CT Device summary Symbol Value IF(AV) 2 x 20 A VRRM 80 V Tj (max) 175 °C VF (typ) 475 mV Electrical characteristics(a) Figure 1. I V "Forward" I 2 x IO X IF VRRM VR VAR IO X V IR VTo VF(Io) VF VF(2xIo) "Reverse" IAR a. VARM and IARM must respect the reverse safe operating area defined in Figure 11. VAR and IAR are pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics April 2011 Doc ID 018718 Rev 1 1/10 www.st.com 10 Characteristics 1 STPS40M80C Characteristics Table 2. Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 80 V IF(RMS) Forward rms current 30 A 20 40 A 200 A 10000 W IF(AV) Average forward current, δ = 0.5 IFSM Surge non repetitive forward current Tc = 150 °C Per diode Tc = 150 °C Per device tp = 10 ms sinusoidal PARM(1) Repetitive peak avalanche power Tc = 25 °C Tj = 25 °C, tp = 1 µs VARM(2) Maximum repetitive peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 30 A 100 V VASM(2) Maximum single pulse peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 30 A 100 V -65 to +175 °C 175 °C Tstg Tj Storage temperature range Maximum operating junction temperature(3) 1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. See Figure 11 3. 1 dPtot < condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal parameters Symbol Parameter Rth(j-c) Junction to case Rth(c) Coupling Value per diode 1.30 total 0.75 0.20 When the two diodes 1 and 2 are used simultaneously: ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) 2/10 Doc ID 018718 Rev 1 Unit °C/W °C/W STPS40M80C Table 4. Characteristics Static electrical characteristics (per diode) Symbol Parameter IR(1) Test conditions Reverse leakage current Tj = 25 °C VR = VRRM Tj = 125 °C Tj = 25 °C IF = 10 A Tj = 125 °C VF(2) Tj = 25 °C Forward voltage drop IF = 20 A Tj = 125 °C Tj = 25 °C IF = 40 A Tj = 125 °C Min. Typ. Max. Unit - 15 65 µA mA - 15 40 - 0.550 0.600 - 0.475 0.510 - 0.655 0.735 - 0.570 0.635 - 0.800 0.920 - 0.680 0.795 V 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.475 x IF(AV) + 0.008 x IF2(RMS) Figure 2. 22 Average forward power dissipation Figure 3. versus average forward current (per diode) PF(AV)(W) 20 18 δ = tp / T δ=1 δ = 0.5 tp 10 Rth(j-a) = Rth(j-c) 18 16 δ = 0.2 14 δ = 0.05 22 20 16 12 IF(AV)(A) 24 T Average forward current versus ambient temperature (δ = 0.5, per diode) δ = 0.1 14 12 10 8 8 6 6 4 4 2 2 IF(AV)(A) 0 0 2 4 Figure 4. 1 6 8 10 12 14 16 18 20 22 24 26 0 28 Normalized avalanche power derating versus pulse duration Tamb(°C) 0 25 Figure 5. PARM(tp) PARM(1µs) 1.2 50 75 100 125 150 175 Normalized avalanche power derating versus junction temperature PARM(Tj) PARM(25 °C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 tp(µs) 0.1 1 10 100 1000 0 25 Doc ID 018718 Rev 1 Tj(°C) 50 75 100 125 150 3/10 Characteristics Figure 6. 260 STPS40M80C Non repetitive surge peak forward current versus overload duration (maximum values, per diode) IM(A) Figure 7. 1.0 240 Relative thermal impedance junction to case versus pulse duration Zth(j-c)/Rth(j-c) 0.9 220 0.8 200 0.7 180 160 Tc = 25 °C 0.6 Tc = 75 °C 0.5 140 120 0.4 100 Tc = 125 °C 80 60 0.3 0.2 IM 40 t δ = 0.5 20 0 1.E-03 Figure 8. 1.E+05 t(s) 1.E-02 1.E-01 Single pulse 0.1 1.E+00 Reverse leakage current versus reverse voltage applied (typical values, per diode) tp(s) 0.0 1.E-04 1.E-03 Figure 9. IR(µA) 10000 1.E-02 1.E-01 Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) Tj = 150 °C F = 1 MHz Vosc = 30 mVRMS Tj = 25 °C Tj = 125 °C 1.E+04 1.E+00 Tj = 100 °C 1.E+03 1000 Tj = 75 °C 1.E+02 Tj = 50 °C 1.E+01 Tj = 25 °C VR(V) 1.E+00 0 10 20 30 40 50 60 70 80 Figure 10. Forward voltage drop versus forward current (per diode) 40 VR(V) 100 1 100 Figure 11. Reverse safe operating area (tp < 1 µs and Tj < 150 °C) IFM(A) 30.0 Tj = 125 °C (Maximum values) 35 10 Iarm (A) Iarm (Varm) 150 °C, 1 µs 29.0 28.0 30 27.0 25 26.0 Tj = 125 °C (Typical values) 20 25.0 24.0 15 23.0 10 Tj = 25 °C (Maximum values) 22.0 5 0 0.0 4/10 VFM(V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 21.0 20.0 100 Doc ID 018718 Rev 1 Varm (V) 105 110 115 120 125 130 135 140 145 150 STPS40M80C Characteristics Figure 12. Thermal resistance junction to ambient versus copper surface under tab for D2PAK 80 Rth(j-a)(°C/W) epoxy printed board copper thickness = 35 µm 70 2 60 D PAK 50 40 30 20 10 2 SCu(cm ) 0 0 5 10 15 20 25 Doc ID 018718 Rev 1 30 35 40 5/10 Package information 2 STPS40M80C Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 5. TO-220AB dimensions Dimensions Ref. Dia Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 C L5 L7 L6 L2 F2 D L9 L4 L2 F M G1 16.4 Typ. 0.645 Typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 E G M Dia. 6/10 Inches A H2 F1 Millimeters Doc ID 018718 Rev 1 2.6 Typ. 3.75 3.85 0.102 Typ. 0.147 0.151 STPS40M80C Package information Table 6. D2PAK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067 C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm R 0.40 typ. V2 0° 0.016 typ. 8° 0° 8° Figure 13. D2PAK footprint (dimensions in mm) 16.90 10.30 5.08 1.30 8.90 Doc ID 018718 Rev 1 3.70 7/10 Package information Table 7. STPS40M80C I2PAK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.044 0.067 c 0.49 0.70 0.019 0.028 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.195 0.203 E 10 10.40 0.394 0.409 L 13 14 0.512 0.551 L1 3.50 3.93 0.138 0.155 L2 1.27 1.40 0.050 0.055 A E c2 L2 D L1 A1 b1 L b c e e1 8/10 Doc ID 018718 Rev 1 STPS40M80C 3 Ordering information Ordering information Table 8. Ordering information Order code STPS40M80CT STPS40M80CR STPS40M80CG-TR 4 Marking Package Weight STPS40M80CT TO-220AB 1.9 g 50 Tube STPS40M80CR I2PAK 1.49 g 50 Tube STPS40M80CG D2 1.48 g 1000 Tape and reel PAK Base qty Delivery mode Revision history Table 9. Revision history Date Revision 11-Apr-2011 1 Changes First issue. Doc ID 018718 Rev 1 9/10 STPS40M80C Please Read Carefully: Information in this document is provided solely in connection with ST products. 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