STRH100N6 Rad-Hard N-channel, 60 V, 80 A Power MOSFET Features VDSS ID RDS(on) Qg 60 V 80 A 12 mΩ 134.4 nC ■ Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 TO-254AA Applications ■ Satellite ■ High reliability 2 Figure 1. Internal schematic diagram Description This N-channel Power MOSFET is developed with STMicroelectronics unique STripFET™ process. It has specifically been designed to sustain high TID and provide immunity to heavy ion effects. Table 1. Device summary Part numbers ESCC part number Quality level Package Lead finish STRH100N6HY1 - Engineering model TO-254AA Gold STRH100N6HYG Note: TBD Mass (g) Temp. range EPPL - ESCC flight 10 -55 to 150 °C Target Contact ST sales office for information about the specific conditions for product in die form and for other packages. November 2011 Doc ID 18353 Rev 3 1/18 www.st.com 18 Contents STRH100N6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Radiation characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Electrical characteristics (curves) 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 Doc ID 18353 Rev 3 . . . . . . . . . . . . . . . . . . . . . . . . . . 10 STRH100N6 1 Electrical ratings Electrical ratings (TC= 25 °C unless otherwise specified) Table 2. Absolute maximum ratings (pre-irradiation) Symbol Parameter Value Unit VDS(1) Drain-source voltage (VGS = 0) 60 V VGS(2) Gate-source voltage ±20 V Drain current (continuous) at TC= 25 °C 80 A Drain current (continuous) at TC= 100 °C 50 A Drain current (pulsed) 320 A PTOT (3) Total dissipation at TC= 25 °C 176 W dv/dt (5) Peak diode recovery voltage slope 2.5 V/ns -55 to 150 °C 150 °C ID (3) ID (3) IDM (4) Tstg Tj Storage temperature Max. operating junction temperature 1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature). 2. This value is guaranteed over the full range of temperature. 3. Rated according to the Rthj-case + Rthc-s. 4. Pulse width limited by safe operating area. 5. ISD ≤ 80 A, di/dt ≤ 600 A/µs, VDD = 80 %V(BR)DSS. Table 3. Thermal data Symbol Parameter Value Unit 0.50 °C/W 0.21 °C/W Value Unit Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 40 A EAS(1) Single pulse avalanche energy (starting Tj= 25 °C, Id= Iar, Vdd=40 V) 954 mJ EAS Single pulse avalanche energy (starting Tj= 110 °C, Id= Iar, Vdd=40 V) 280 mJ EAR Repetitive avalanche (Vdd = 40 V, IAR = 40 A, f = 10 KHz, TJ = 25 °C, duty cycle = 50%) 40 mJ Rthj-case Thermal resistance junction-case max Rthc-s Table 4. Symbol IAR Case-to-sink typ Avalanche characteristics Parameter Doc ID 18353 Rev 3 3/18 Electrical ratings Table 4. STRH100N6 Avalanche characteristics (continued) Symbol EAR Parameter Value Unit Repetitive avalanche (Vdd = 40 V, IAR = 40 A, f = 100 KHz, TJ = 25 °C, duty cycle = 10%) 24 mJ Repetitive avalanche (Vdd = 40 V, IAR = 40 A, f = 100 KHz, TJ = 110 °C, duty cycle = 10%) 7.7 mJ 1. Maximum rating value. 4/18 Doc ID 18353 Rev 3 STRH100N6 2 Electrical characteristics Electrical characteristics (TC = 25°C unless otherwise specified). Pre-irradiation Table 5. Symbol Pre-irradation on/off states Parameter Test conditions Min. Max. Unit 10 µA 100 -100 nA nA V IDSS Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) BVDSS(1) Drain-to-source breakdown voltage VGS = 0 V, ID = 1 mA 60 VGS(th) Gate threshold voltage VDS =VGS, ID = 1 mA 2 RDS(on) Static drain-source on resistance VGS = 12 V ID = 40 A Typ. 80% BVDss VGS = 20 V VGS = - 20 V 4.5 0.012 0.0135 V Ω 1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature). Table 6. Symbol Pre-irradation dynamic Parameter Test conditions Min. Typ. Max. Unit Input capacitance Output capacitance Reverse transfer capacitance VGS = 0, VDS = 25 V, f=1MHz 3916 864 325 4895 1080 407 5874 1296 488 pF pF pF Qg Qgs Qgd Total gate charge Gate-to-source charge Gate-to-drain (“Miller”) charge VDD = 30 V, ID = 80 A, VGS=12 V 107 22 34 134.4 32.5 46.5 161 43 59 nC nC nC RG(2) Gate input resistance f=1MHz Gate DC bias=0 test signal level= 20 mV open drain 1.6 2 2.4 Ω Ciss Coss(1) Crss 1. This value is guaranteed over the full range of temperature. 2. Not tested, guaranteed by process. Doc ID 18353 Rev 3 5/18 Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol STRH100N6 Pre-irradation switching times Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 30 V, ID = 40 A, RG = 4.7 Ω, VGS = 12 V Typ. Max. Unit 22 90 62 45 28 115 86 69 34 140 110 93 ns ns ns ns Min. Typ. Max. Unit 80 320 A A Pre-irradation source drain diode(1) Parameter Test conditions ISD ISDM (2) Source-drain current Source-drain current (pulsed) VSD (3) Forward on voltage ISD = 80 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs VDD= 48 V, Tj = 25 °C 307 384 4.7 24.6 461 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs VDD= 48 V, Tj = 150 °C 370 462.4 6.5 28.3 555 ns µC A trr(4) Qrr(4) IRRM(4) trr(4) Qrr(4) IRRM(4) 1. Refer to Table 16: Source drain diode. 2. Pulse width limited by safe operating area. 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 4. Not tested in production, guaranteed by process. 6/18 Min. Doc ID 18353 Rev 3 1.1 V STRH100N6 3 Radiation characteristics Radiation characteristics The technology of STMicroelectronics Rad-Hard Power MOSFETs is extremely resistant to radiative environments. Every manufacturing lot is tested for total ionizing dose (irradiation done according to the ESCC 22900 specification, window 1.) using the TO-3 package. Both pre-irradiation and post-irradiation performance are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (Tamb= 22 ± 3 °C unless otherwise specified). Total dose radiation (TID) testing One bias conditions using the TO-3 package: – VGS bias: + 15 V applied and VDS= 0 V during irradiation The following parameters are measured (see Table 9, Table 10 and Table 11): ● before irradiation ● after irradiation ● after 24 hrs @ room temperature ● after 168 hrs @ 100 °C anneal Table 9. Symbol Post-irradiation on/off states @ TJ= 25 °C, (Co60 γ rays 70 K Rad(Si)) Parameter Test conditions Drift values ∆ Unit IDSS Zero gate voltage drain current (VGS = 0) 80% BVDss +10 µA IGSS Gate body leakage current (VDS = 0) VGS = 20 V VGS = -20 V 1.5 -1.5 nA BVDSS Drain-to-source breakdown voltage VGS = 0, ID = 1 mA -15% V VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA -60%/ + 25% V RDS(on) Static drain-source on resistance VGS = 10 V; ID = 40 A ±15 % Ω Table 10. Symbol Qg Dynamic post-irradiation @ TJ= 25 °C, (Co60 γ rays 70 K Rad(Si)) Parameter Test conditions Drift values ∆ Unit -5% / +50% Total gate charge Qgs Gate-source charge Qgd Gate-drain charge IG = 1 mA, VGS = 12 V, VDS = 30 V, IDS = 40 A ±35 % nC -5% / +110% Doc ID 18353 Rev 3 7/18 Radiation characteristics STRH100N6 Source drain diode post-irradiation @ TJ= 25 °C, (Co60 γ rays 70 K Rad(Si))(1) Table 11. Symbol Parameter VSD (2) Test conditions Forward on voltage Drift values ∆. Unit ± 5% V ISD = 50 A, VGS = 0 1. Refer to Figure 16. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Single event effect, SOA The technology of the STMicroelectronics Rad-Hard Power MOSFETs is extremely resistant to heavy ion environment for single event effect (irradiation per MIL-STD-750E, method 1080 bias circuit in Figure 3: Single event effect, bias circuit) SEB and SEGR tests have been performed with a fluence of 3e+5 ions/cm². The accept/reject criteria are: ● SEB test: drain voltage checked, trigger level is set to Vds = - 2 V. Stop condition: as soon as a SEB occurs or if the fluence reaches 3e+5 ions/cm². ● SEGR test: the gate current is monitored every 100 ms. A gate stress is performed before and after irradiation. Stop condition: as soon as the gate current reaches 1 mA (during irradiation or during PIGS test) or if the fluence reaches 3e+5 ions/cm². The results are: Table 12. – no SEB – SEGR test produces the following SOA (see Table 12: Single event effect (SEE), safe operating area (SOA) and Figure 2: Single event effect, SOA) Single event effect (SEE), safe operating area (SOA) Ion Let (Mev/(mg/cm2) Kr 8/18 32 Energy Range (MeV) (µm) 768 94 VDS (V) @VGS=0 @VGS= -2 V @VGS= -5 V @VGS= -10 V @VGS= -20 V 60 48 Doc ID 18353 Rev 3 39 27 15 STRH100N6 Radiation characteristics Figure 2. Single event effect, SOA +R-E6CM£MG 6DS6DSMAX 6GS6 Figure 3. Single event effect, bias circuit(a) 6DS 6GS 5 2 # 2 N& # & # P& !-V a. Bias condition during radiation refer to Table 12: Single event effect (SEE), safe operating area (SOA) . Doc ID 18353 Rev 3 9/18 Electrical characteristics (curves) STRH100N6 4 Electrical characteristics (curves) Figure 4. Safe operating area Figure 5. Thermal impedance Figure 7. Transfer characteristics AM07261v1 ID (A) is ea ar (on) s S i th RD in ax ion y m t a er d b Op mite Li 100 100µs 1ms 10 10ms Sinlge pulse 1 0.1 0.1 Figure 6. ID (A) 350 10 1 VDS(V) Output characteristics HV32910 VGS=10V AM07260V1 ID (A) VDS= 1.3 V 7V 300 100 250 200 TJ= +150 °C 6V 150 TJ= 25 °C 10 100 50 0 0 10/18 5V 5 10 TJ= -55 °C VDS(V) Doc ID 18353 Rev 3 1 3.5 4.0 4.5 5.0 5.5 6.0 VGS(V) STRH100N6 Figure 8. Electrical characteristics (curves) Gate charge vs gate-source voltage Figure 9. AM00892v1 VGS (V) Capacitance variations HV32930 C (pF) VDS=30 V 7000 12 6000 Ciss 5000 8 ID=80 A 4000 3000 4 0 0 20 40 2000 ID=20 A ID=40 A Crss Coss 1000 60 80 100 120 0 Qg(nC) 0 10 20 30 40 50 VDS(V) Figure 10. Normalized BVDSS vs temperature Figure 11. Static drain-source on resistance Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature Doc ID 18353 Rev 3 11/18 Electrical characteristics (curves) STRH100N6 Figure 14. Source drain-diode forward characteristics 12/18 Doc ID 18353 Rev 3 STRH100N6 5 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load (1) 1. Max driver VGS slope = 1V/ns (no DUT) Figure 16. Source drain diode )&-BODYDIODEFORWARDCURRENT DIDT TRR ;=OF)2- "ODYDIODEREVERSECURRENT) 2A B !-6 Figure 17. Unclamped inductive load test circuit (single pulse and repetitive) Doc ID 18353 Rev 3 13/18 Package mechanical data 6 STRH100N6 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 13. TO-254AA mechanical data mm Inch Dim. Min. Max. Min. Typ. Max. A 13.59 13.84 0.535 0.545 B 13.59 13.84 0.535 0.545 C 20.07 20.32 0.790 0.800 D 6.32 6.60 0.249 0.260 E 1.02 1.27 0.040 0.050 F 3.56 3.81 0.140 0.150 G 16.89 17.40 0.665 0.685 H I 6.86 0.89 1.02 0.270 1.14 0.035 0.040 J 3.81 0.150 K 3.81 0.150 L 12.95 14.50 M 2.92 3.18 N 0.71 R1 1.00 R2 14/18 Typ. 1.52 1.65 1.78 Doc ID 18353 Rev 3 0.510 0.045 0.571 0.039 0.060 0.065 0.070 STRH100N6 Package mechanical data Figure 18. TO-254AA drawing Doc ID 18353 Rev 3 15/18 Order codes STRH100N6 7 Order codes Table 14. Ordering information Order codes ESCC part number Quality level EPPL STRH100N6HY1 - Engineer model - STRH100N6HYG TBD Package TO-254AA ESCC flight Target Lead finish Gold Marking STRH100N6FSY1 + BeO Packing Strip pack TBD Contact ST sales office for information about the specific conditions for products in die form and for other packages. 16/18 Doc ID 18353 Rev 3 STRH100N6 8 Revision history Revision history Table 15. Document revision history Date Revision Changes 04-Jan-2011 1 First release. 27-Jul-2011 2 Updated order codes in Table 1: Device summary and Table 14: Ordering information. Minor text changes. 09-Nov-2011 3 Updated dynamic values on Table 6: Pre-irradation dynamic and Table 7: Pre-irradation switching times. Doc ID 18353 Rev 3 17/18 STRH100N6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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