STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages Datasheet — production data Features TAB Order codes VDSS (@Tjmax) RDS(on) max ID 3 12 3 STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N 1 2 I²PAK TO-220FP 650 V < 0.36 Ω 11 A TAB TAB 3 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 1 1 IPAK TO-220 Applications ■ 2 3 2 Figure 1. 2 3 1 TO-247 Internal schematic diagram Switching applications $OR4!" Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 3# Table 1. Device summary Order codes STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N November 2012 This is information on a product in full production. Marking Packages Packaging 13NM60N TO-220FP I²PAK TO-220 IPAK TO-247 Tube Tube Tube Tube Tube Doc ID 15420 Rev 5 1/21 www.st.com 21 Contents STF/I/P/U/W13NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2/21 .............................................. 9 Doc ID 15420 Rev 5 STF/I/P/U/W13NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220FP I²PAK, TO-220, IPAK, TO-247 VDS Drain-source voltage 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 11(1) 11 A ID Drain current (continuous) at TC = 100 °C 6.93(1) 6.93 A 44(1) 44 A 25 90 W IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C dv/dt (3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature Tj 15 V/ns 2500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Thermal data Value Symbol Parameter TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Table 4. Symbol I²PAK TO-220 5 62.5 Unit IPAK TO-247 1.39 62.5 100 °C/W 50 °C/W Avalanche characteristics Parameter Value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 3.5 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) 200 mJ Doc ID 15420 Rev 5 3/21 Electrical characteristics 2 STF/I/P/U/W13NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On/off states Parameter Test conditions Drain-source I = 1 mA breakdown voltage (VGS = 0) D Min. Typ. Max. Unit 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V ±0.1 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 5.5 A 0.28 0.36 Ω Min. Typ. Max. Unit Table 6. Symbol 2 Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 790 60 3.6 - pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 135 - pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 11 A, VGS = 10 V, (see Figure 20) - 27 4 14 - nC nC nC RG Gate input resistance f=1 MHz open drain - 4.7 - Ω Ciss Coss Crss Coss eq. (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/21 Doc ID 15420 Rev 5 STF/I/P/U/W13NM60N Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 5.5 A RG = 4.7 Ω VGS = 10 V (see Figure 19) Min. Typ. - 3 8 30 10 Max. Unit - ns ns ns ns Source drain diode Parameter Test conditions Min Typ. Max. Unit - 11 44 A A 1.5 V ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 11 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11 A, di/dt = 100 A/µs VDD = 100 V (see Figure 21) - 230 2 18 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 21) - 290 190 17 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 15420 Rev 5 5/21 Electrical characteristics STF/I/P/U/W13NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for I²PAK and TO-220 Figure 3. Thermal impedance for I²PAK and TO-220 Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-247 AM03258v1 Op Lim erat ite ion d b in y m this ax ar RD ea is S( o ID (A) n) 10 1 0.1 0.1 100µs Tj=150°C Tc=25°C 1ms Sinlge pulse 10ms 10 1 Figure 4. 10µs 100 VDS(V) Safe operating area for TO-220FP AM03259v1 ) on 10µs m 100µs Li 1 O D S( 10 pe ra ite tion d by in t m his ax a R rea is ID (A) 1ms Tj=150°C Tc=25°C Single pulse 0.1 0.01 0.1 Figure 6. 10 1 100 10ms VDS(V) Safe operating area for TO-247 AM03983v1 n) (o DS Op Lim era ite tion d by in th m is ax ar R e 10 a is ID (A) 1 10µs 100µs Tj=150°C Tc=25°C 1ms 10ms Sinlge pulse 0.1 0.1 6/21 1 10 100 VDS(V) Doc ID 15420 Rev 5 STF/I/P/U/W13NM60N Figure 8. Electrical characteristics Safe operating area for IPAK Figure 9. Thermal impedance for IPAK !-V )$ ! S $3 AIS O N /P ,IM ERA ITE TION D IN BY TH M IS A X A R 2 E S 4J # 4C # MS 3INGLE PULSE MS 6$36 Figure 10. Output characteristics )$ ! !-V 6'36 Figure 11. Transfer characteristics 6 6 6$36 Figure 12. Normalized VDS vs temperature AM09028v1 VDS (norm) ID=1mA 1.10 6$36 6 !-V )$ ! 1.06 6'36 Figure 13. Static drain-source on-resistance AM03302v1 RDS(on) (Ω) 0.30 1.08 VGS=10V 0.28 1.04 1.02 0.26 1.00 0.24 0.98 0.96 0.94 0.92 -50 -25 0.22 0 25 50 75 100 TJ(°C) Doc ID 15420 Rev 5 0.2 0 2 4 6 8 10 ID(A) 7/21 Electrical characteristics STF/I/P/U/W13NM60N Figure 14. Gate charge vs gate-source voltage Figure 15. Capacitance variations AM03305v1 VGS (V) VDS(V) VDD=480V 12 500 ID=11A VDS !-V # P& 10 #ISS 400 8 300 6 #OSS 200 4 100 2 0 20 10 0 30 0 Qg(nC) Figure 16. Normalized gate threshold voltage vs temperature AM03306v1 VGS(th) (norm) 1.10 #RSS 6$36 Figure 17. Normalized on-resistance vs temperature AM03307v1 RDS(on) (norm) 2.1 ID=250µA ID=5.5A 1.9 1.7 1.00 1.5 1.3 0.90 1.1 0.80 0.9 0.70 -50 -25 0.5 -50 -25 0.7 0 25 50 75 100 TJ(°C) Figure 18. Source-drain diode forward characteristics AM09290v1 VSD (V) TJ=-50°C TJ=25°C 1.2 1.0 TJ=150°C 0.8 0.6 0.4 0 8/21 2 4 6 8 10 ISD(A) Doc ID 15420 Rev 5 0 25 50 75 100 TJ(°C) STF/I/P/U/W13NM60N 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 15420 Rev 5 10% AM01473v1 9/21 Package mechanical data 4 STF/I/P/U/W13NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/21 Doc ID 15420 Rev 5 STF/I/P/U/W13NM60N Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 15420 Rev 5 11/21 Package mechanical data STF/I/P/U/W13NM60N Figure 25. TO-220FP drawing 7012510_Rev_K_B 12/21 Doc ID 15420 Rev 5 STF/I/P/U/W13NM60N Table 10. Package mechanical data I²PAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 26. I²PAK (TO-262) drawing 0004982_Rev_H Doc ID 15420 Rev 5 13/21 Package mechanical data Table 11. STF/I/P/U/W13NM60N TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/21 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 15420 Rev 5 STF/I/P/U/W13NM60N Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 15420 Rev 5 15/21 Package mechanical data Table 12. STF/I/P/U/W13NM60N IPAK (TO-251) mechanical data mm. DIM. min. typ A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16/21 max. 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 o 10 Doc ID 15420 Rev 5 1.00 STF/I/P/U/W13NM60N Package mechanical data Figure 28. IPAK (TO-251) drawing 0068771_J Doc ID 15420 Rev 5 17/21 Package mechanical data Table 13. STF/I/P/U/W13NM60N TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 18/21 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 Doc ID 15420 Rev 5 5.70 STF/I/P/U/W13NM60N Package mechanical data Figure 29. TO-247 drawing 0075325_G Doc ID 15420 Rev 5 19/21 Revision history 5 STF/I/P/U/W13NM60N Revision history Table 14. 20/21 Document revision history Date Revision Changes 29-Feb-2009 1 First release 13-Jan-2010 2 – Added new package, mechanical data: TO-247 – Added new package, mechanical data: D²PAK 08-Nov-2010 3 – Modified Figure 4 – Added new package, mechanical data: I²PAK 18-Jan-2012 4 – Added new package, mechanical data: IPAK – Minor text changes 14-Nov-2012 5 The part numbers STB13NM60N and STD13NM60N have been moved to a separate datasheet. Section 4: Package mechanical data has been updated. Doc ID 15420 Rev 5 STF/I/P/U/W13NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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