STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 5 A, 0.84 Ω, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET Features Order codes VDSS @ TJmax STD7NM60N STF7NM60N STP7NM60N STU7NM60N RDS(on) max. ID 3 2 3 1 650 V < 0.9 Ω 1 TO-220 IPAK 5A 2 3 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 1 3 1 DPAK 2 TO-220FP Application Switching applications Figure 1. Internal schematic diagram Description $ These devices are N-channel Power MOSFETs realized using the second generation of MDmeshTM technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel TO-220FP Tube STP7NM60N TO-220 Tube STU7NM60N IPAK Tube STD7NM60N STF7NM60N 7NM60N November 2010 Doc ID 16472 Rev 4 1/17 www.st.com 17 Contents STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 Doc ID 16472 Rev 4 STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, IPAK, DPAK TO-220FP VDS Drain-source voltage (VGS = 0) 600 VGS Gate-source voltage ± 25 V V (1) A ID Drain current (continuous) at TC = 25 °C 5 5 ID Drain current (continuous) at TC = 100 °C 3 3 (1) A Drain current (pulsed) 20 20(1) A Total dissipation at TC = 25 °C 45 20 W IDM (2) PTOT dv/dt (3) Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 15 V/ns 2500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit DPAK IPAK Rthj-case Thermal resistance junction-case max 2.78 Rthj-amb Thermal resistance junction-ambient max 100 Rthj-pcb Thermal resistance junction-pcb max Tl Table 4. Symbol TO-220 TO-220FP 6.25 62.5 50 °C/W °C/W °C/W Maximum lead temperature for soldering purpose 300 °C Thermal data Parameter Value Unit IAR Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 2 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50 V) 119 mJ Doc ID 16472 Rev 4 3/17 Electrical characteristics 2 STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 600 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 3 4 V 0.84 0.9 Ω Min. Typ. Max. Unit VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 6. Symbol 2 VGS = 10 V, ID = 2.5 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 363 24.6 1.1 - pF pF pF Output equivalent capacitance VDS = 0 to 480 V, VGS = 0 - 130 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5.4 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 5 A, VGS = 10 V (see Figure 18) - 14 2.7 7.7 - nC nC nC Ciss Coss Crss Coss eq.(1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. 4/17 Doc ID 16472 Rev 4 STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Table 7. Symbol td(on) tr td(off) tf Table 8. Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 300 V, ID = 2.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 7 10 26 12 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 5 20 A A ISD = 5 A, VGS = 0 - 1.3 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) - 213 1.5 14 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 265 1.8 14 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 16472 Rev 4 5/17 Electrical characteristics STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK, IPAK Figure 3. Thermal impedance for DPAK, IPAK AM06474v1 100 is 10 D S( on ) O Li per m at ite io d ni by n m this ax a R rea 10µs ID (A) 1 100µs 1ms Tj=150°C Tc=25°C 0.1 10ms Single pulse 0.01 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-220 AM06475v1 100 on ) 10µs D S( O Li per m at ite io d ni by n m this ax a R rea is 10 ID (A) 1 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 0.01 0.1 Figure 6. Single pulse 10 1 100 VDS(V) Safe operating area for TO-220 AM06476v1 100 ) S( on O Li per m at ite io d ni by n m this ax a R rea is 10 10µs D ID (A) 1 100µs 1ms Tj=150°C Tc=25°C 0.1 10ms Single pulse 0.01 0.1 6/17 1 10 100 VDS(V) Doc ID 16472 Rev 4 STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Figure 8. Output characteristics Electrical characteristics Figure 9. Transfer characteristics AM06477v1 AM06478v1 10 ID (A) 9 VGS=10V VDS=20V 9 6V 8 8 7 7 6 6 ID (A) 5 5 4 4 5V 3 3 2 2 1 1 0 0 0 0 20 10 40 VDS(V) 2 4 6 8 10 VGS(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance AM06479v1 VGS (V) VDD=480V ID=5A 12 VDS (V) VGS 500 VDS 10 AM06480v1 RDS(on) (Ohm) VGS=10V 0.88 0.86 400 8 300 0.84 0.82 6 200 4 0.80 0.78 100 2 0 0 2 6 4 8 10 12 0 14 16 Qg(nC) Figure 12. Capacitance variations 0.74 0 1 2 3 4 5 ID(A) Figure 13. Output capacitance stored energy AM06481v1 C (pF) 0.76 AM06482v1 Eoss (µJ) 2.5 1000 Ciss 2.0 1.5 100 Coss 10 1.0 0.5 1 0.1 Crss 1 10 100 VDS(V) Doc ID 16472 Rev 4 0 0 100 200 300 400 500 600 VDS(V) 7/17 Electrical characteristics STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Figure 14. Normalized gate threshold voltage vs temperature AM06483v1 VGS(th) (norm) Figure 15. Normalized on resistance vs temperature AM06484v1 RDS(on) (norm) 1.10 ID=2.5A 2.1 ID=250µA 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.80 0.9 0.70 -50 0.5 -50 -25 0.7 -25 0 25 50 75 100 TJ(°C) Figure 16. Normalized BVDSS vs temperature AM06485v1 BVDSS (norm) ID=1mA 1.07 1.05 1.03 1.01 0.99 0.97 0.95 0.93 -50 -25 8/17 0 25 50 75 100 TJ(°C) Doc ID 16472 Rev 4 0 25 50 75 100 TJ(°C) STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform AM01471v1 Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 16472 Rev 4 10% AM01473v1 9/17 Package mechanical data 4 STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/17 Doc ID 16472 Rev 4 STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 23. TO-220FP drawing mechanical data L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 16472 Rev 4 11/17 Package mechanical data STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 c 0.45 5.40 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 (L1) 0.80 9.40 1.20 L2 0.80 V1 10 o 0068771_H 12/17 Doc ID 16472 Rev 4 STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G Doc ID 16472 Rev 4 13/17 Package mechanical data STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S 14/17 Doc ID 16472 Rev 4 STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 MIN. inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 MAX. 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 0.059 0.065 0.073 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 Doc ID 16472 Rev 4 15/17 Revision history 6 STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Revision history Table 10. 16/17 Document revision history Date Revision Changes 29-Oct-2009 1 First release. 19-Jul-2010 2 Corrected values in Table 3: Thermal data. 11-Oct-2010 3 Inserted new value in Table 6: Dynamic 04-Nov-2010 4 Changed RDS(on) typical value. Doc ID 16472 Rev 4 STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. 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