STMICROELECTRONICS STU8NM50N

STD8NM50N, STP8NM50N, STU8NM50N
N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET
in DPAK, TO-220 and IPAK packages
Datasheet — production data
Features
TAB
Order codes
VDSS@TJMAX RDS(on)max.
STD8NM50N
STP8NM50N
STU8NM50N
ID
3
1
550 V
< 0.79 Ω
DPAK
5A
TAB
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
TAB
1
Applications
■
3
3
2
2
1
IPAK
TO-220
Switching applications
Description
Figure 1.
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Internal schematic diagram
$4!"
'
3
!-V
Table 1.
Device summary
Order codes
Marking
Packages
Packaging
DPAK
Tape and reel
STD8NM50N
STP8NM50N
8NM50N
TO-220
Tube
STU8NM50N
September 2012
This is information on a product in full production.
IPAK
Doc ID 17413 Rev 6
1/19
www.st.com
19
Contents
STD8NM50N, STP8NM50N, STU8NM50N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/19
.............................................. 9
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
Drain-source voltage
500
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
5
A
ID
Drain current (continuous) at TC = 100 °C
3
A
Total dissipation at TC = 25 °C
45
W
Peak diode recovery voltage slope
15
V/ns
- 55 to 150
°C
150
°C
PTOT
dv/dt
(1)
Tstg
Tj
Storage temperature
Max. operating junction temperature
1. ISD ≤ 7 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDS= 80% V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
DPAK
IPAK
Rthj-case
Thermal resistance junction-case max
2.78
Rthj-amb
Thermal resistance junction-ambient max
100
Rthj-pcb
Thermal resistance junction-pcb max
Tl
Table 4.
TO-220
°C/W
62.5
50
°C/W
°C/W
Maximum lead temperature for soldering
purpose
300
°C
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
2
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
140
mJ
Doc ID 17413 Rev 6
3/19
Electrical characteristics
2
STD8NM50N, STP8NM50N, STU8NM50N
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
IDSS
Zero gate voltage
VDS = 500 V
drain current (VGS = 0) VDS = 500 V, TC = 125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Unit
500
V
± 100
nA
3
4
V
0.73
0.79
Ω
Min.
Typ.
Max.
Unit
VDS = 50 V, f = 1 MHz,
VGS = 0
-
364
33
1.2
-
pF
pF
pF
VDS = 0 to 50 V, VGS = 0
-
147.5
-
pF
VGS = ± 25 V
RDS(on)
Static drain-source on
resistance
Ciss
Coss
Crss
Max.
µA
µA
Gate threshold voltage VDS = VGS, ID = 250 µA
Symbol
Typ.
1
100
VGS(th)
Table 6.
Min.
2
VGS = 10 V, ID = 2.5 A
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
Coss(eq)(1) capacitance time
related
Test conditions
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
5.4
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400 V, ID = 5 A,
VGS = 10 V
(see Figure 16)
-
14
3
7
-
nC
nC
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/19
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
Table 7.
Symbol
td(on)
tr
td(off)
tf
Table 8.
Electrical characteristics
Switching times
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 250 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Typ.
-
7
4.4
25
8.8
Min.
Typ.
Max
Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Min.
Test conditions
Max. Unit
-
5
20
A
A
ISD = 5 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 20)
-
187
1.3
14
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 20)
-
224
1.5
13
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17413 Rev 6
5/19
Electrical characteristics
STD8NM50N, STP8NM50N, STU8NM50N
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for DPAK and
IPAK
Figure 3.
Thermal impedance for DPAK and
IPAK
Figure 5.
Thermal impedancefor TO-220
Figure 7.
Transfer characteristics
AM07915v1
ID
(A)
on
)
10µs
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
1
100µs
1ms
10ms
Tj=150°C
Tc=25°C
0.1
0.01
0.1
Figure 4.
Single
pulse
10
1
100
VDS(V)
Safe operating area for TO-220
AM07916v1
ID
(A)
n)
10µs
D
S(
o
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
1
100µs
1ms
10ms
Tj=150°C
Tc=25°C
0.1
0.01
0.1
Figure 6.
Single
pulse
10
1
100
VDS(V)
Output characteristics
ID
(A)
AM07917v1
VGS=10V
10
AM07918v1
ID
(A)
VDS= 20 V
10
7V
8
8
6V
6
6
4
4
5V
2
2
0
0
6/19
10
20
30
VDS(V)
Doc ID 17413 Rev 6
0
0
2
4
6
8
VGS(V)
STD8NM50N, STP8NM50N, STU8NM50N
Figure 8.
Electrical characteristics
Static drain-source on resistance
AM07919v1
RDS(on)
(Ω)
0.77
Figure 9.
Gate charge vs gate-source voltage
AM03195v1
VGS
(V)
VDD=400 V
12
VGS=10V
350
VDS
10
0.76
400
ID=5 A
300
0.75
8
250
6
200
0.74
0.73
150
0.72
4
100
0.71
2
0.7
0.69
0
2
1
3
4
5 ID(A)
Figure 10. Capacitance variations
50
0
10
5
0
0
Qg(nC)
15
Figure 11. Output capacitance stored energy
AM07921v1
C
(pF)
AM07922v1
E
(μJ)
1000
Ciss
2
100
Coss
1
10
Crss
1
0
1
10
100
Figure 12. Normalized gate threshold voltage
vs temperature
AM07923v1
VGS(th)
(norm)
0
0
VDS(V)
ID = 250 µA
1.3
0.80
0.9
50
75 100
500 VDS(V)
AM07924v1
ID = 2.5 A
0.90
25
400
RDS(on)
(norm)
2.1
1.7
0
300
Figure 13. Normalized on resistance vs
temperature
1.00
0.70
-50 -25
200
100
TJ(°C)
Doc ID 17413 Rev 6
0.5
-50 -25
0
25
50
75 100
TJ(°C)
7/19
Electrical characteristics
STD8NM50N, STP8NM50N, STU8NM50N
Figure 14. Normalized VDS vs temperature
AM09028v1
VDS
(norm)
ID=1mA
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25
8/19
0
25
50
75 100
TJ(°C)
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 17. Test circuit for inductive load
Figure 18. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 19. Unclamped inductive waveform
AM01471v1
Figure 20. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 17413 Rev 6
10%
AM01473v1
9/19
Package mechanical data
4
STD8NM50N, STP8NM50N, STU8NM50N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 9.
DPAK (TO-252) mechanical data
mm
Dim.
Min.
Typ.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
E
5.10
6.40
6.60
E1
4.70
e
2.28
e1
4.40
4.60
H
9.35
10.10
L
1
L1
2.80
L2
0.80
L4
0.60
1
R
V2
10/19
Max.
0.20
0°
8°
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
Package mechanical data
Figure 21. DPAK (TO-252) drawing
0068772_I
Figure 22. DPAK footprint(a)
6.7
1.8
3
1.6
2.3
6.7
2.3
1.6
AM08850v1
a. All dimension are in millimeters
Doc ID 17413 Rev 6
11/19
Package mechanical data
Table 10.
STD8NM50N, STP8NM50N, STU8NM50N
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
12/19
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
Package mechanical data
Figure 23. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 17413 Rev 6
13/19
Package mechanical data
Table 11.
STD8NM50N, STP8NM50N, STU8NM50N
IPAK (TO-251) mechanical data
mm.
DIM
min.
typ.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
B5
5.40
0.30
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
H
14/19
max.
4.60
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
V1
10°
Doc ID 17413 Rev 6
1.00
STD8NM50N, STP8NM50N, STU8NM50N
Package mechanical data
Figure 24. IPAK (TO-251) drawing
0068771_J
Doc ID 17413 Rev 6
15/19
Packaging mechanical data
5
STD8NM50N, STP8NM50N, STU8NM50N
Packaging mechanical data
Table 12.
DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
16/19
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
Doc ID 17413 Rev 6
18.4
22.4
STD8NM50N, STP8NM50N, STU8NM50N
Packaging mechanical data
Figure 25. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
W
K0
B0
For machine ref. only
including draft and
radii concentric around B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 26. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
Tape slot
In core for
Full radius
Tape start
G measured
At hub
AM08851v1
Doc ID 17413 Rev 6
17/19
Revision history
6
STD8NM50N, STP8NM50N, STU8NM50N
Revision history
Table 13.
18/19
Document revision history
Date
Revision
Changes
20-Apr-2010
1
First release.
03-Sep-2010
2
Document status promoted from preliminary data to datasheet.
Inserted Section 2.1: Electrical characteristics (curves).
Corrected RDS(on) max value in: Features.
03-Feb-2011
3
Modified: Figure 4.
Modified: note 1.
Modified: Table 5.
21-Oct-2011
4
Updated VDSS (@Tjmax) in cover page.
Updated Section 4: Package mechanical data.
Minor text changes.
15-Nov-2011
5
The part number STF8NM50N has been moved to a separate
datasheet.
13-Sep-2012
6
Figure 2 and Figure 4 have been modified.
Section 4: Package mechanical data has been updated.
Doc ID 17413 Rev 6
STD8NM50N, STP8NM50N, STU8NM50N
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Doc ID 17413 Rev 6
19/19