STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 N-channel 950 V, 0.68 Ω typ., 10 A Zener-protected SuperMESH3™ Power MOSFET in TO-220FP, I2PAKFP, TO-220 and TO-247 Datasheet − production data Features Order codes VDSS RDS(on)max ID PTOT STF13N95K3 STFI13N95K3 STP13N95K3 40 W 950 V < 0.85 Ω STW13N95K3 10 A TO-220FP 1 190 W 2 TAB ■ Gate charge minimized ■ Extremely large avalanche performance ■ 100% avalanche tested ■ Very low intrinsic capacitance ■ Zener-protected Figure 1. 3 TO-247 TO-220 Applications ■ I 2 PAKFP Internal schematic diagram Switching applications D(2 or TAB) Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package STF13N95K3 TO-220FP I2PAKFP STFI13N95K3 13N95K3 Tube STP13N95K3 TO-220 STW13N95K3 TO-247 June 2012 This is information on a product in full production. Packaging Doc ID15685 Rev 3 1/19 www.st.com 19 Contents STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 .............................................. 9 Doc ID15685 Rev 3 STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 1 Electrical ratings Electrical ratings . Table 2. Absolute maximum ratings Value Symbol Parameter TO-220 TO-220FP TO-247 I2PAKFP VDS Drain source voltage 950 VGS Gate- source voltage ± 30 ID ID Drain current (continuous) at TC = 25 °C 10 Unit V V 10 (1) (1) A Drain current (continuous) at TC = 100 °C 6 6 A IDM (2) Drain current (pulsed) 40 40 (1) A PTOT Total dissipation at TC = 25 °C 190 40 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax ) 13 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 400 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) dv/dt (3) Tj Tstg 2500 Peak diode recovery voltage slope Operating junction temperature Storage temperature V 9 V/ns - 55 to 150 °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VPeak ≤V(BR)DSS. Table 3. Thermal data Value Symbol Parameter TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Doc ID15685 Rev 3 TO-247 0.66 62.5 50 TO-220FP Unit I2PAKFP 3.13 °C/W 62.5 °C/W 3/19 Electrical characteristics 2 STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 950V, VDS = 950V, Tc=125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID= 5 A 0.68 0.85 Ω Typ. Max. Unit V(BR)DSS Table 5. Symbol 950 3 V Dynamic Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions Min. 1620 VDS =100 V, f=1 MHz, VGS=0 - 117 pF - 1.2 Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance f = 1MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 760 V, ID = 10 A VGS =10 V (see Figure 20) pF pF - 115 - pF - 131 - pF - 2.3 - Ω - 51 10 30 - nC nC nC VGS = 0, VDS = 0 to 760 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/19 Doc ID15685 Rev 3 STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 475 V, ID = 5 A, RG=4.7 Ω, VGS=10 V (see Figure 22) Electrical characteristics Min. Typ. Max. Unit - 18 16 50 21 - ns ns ns ns Min. Typ. Max. Unit - 10 40 mA A 1.6 V Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Forward on voltage ISD= 10 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 10 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 21) - 500 9 36 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 10 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C(see Figure 21) - 624 11 37 ns µC A Min. Typ. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs ± 1mA, (open drain) 30 Max. - Unit V The built-in-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID15685 Rev 3 5/19 Electrical characteristics STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP and I2PAKFP Figure 5. Thermal impedance for TO-220 Figure 7. Thermal impedance for TO-247 S / ,I PE M RA ITE TIO D N BY IN M TH AX IS 2 AR E $ A 3 IS ON Thermal impedance for TO-220FP and I2PAKFP !-V )$ ! Figure 3. S MS MS 4J # Figure 4. 4C # 3INGLE PULSE Safe operating area for TO-220 !-V N O S S $3 / ,IM PERA ITE TION D IN BY T M HIS AX A 2 RE A IS )$ ! 6$36 MS MS 4J # 4C # 3INGLE PULSE Figure 6. 6$36 Safe operating area for TO-247 !-V )$ ! S S / ,IM PERA ITE TION D IN BY T M HIS AX A 2 RE $3 AI S O N MS 4J # MS 4C # 3INGLE PULSE 6/19 6$36 Doc ID15685 Rev 3 STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Figure 8. Output characteristics Figure 9. !-V )$ ! 6'36 Electrical characteristics Transfer characteristics !-V )$ ! 6$36 6 6 6 6$36 6'36 Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance !-V 6$3 6 6'3 6 6$$6 6$3 )$! /HM !-V 2$3ON 6'36 1GN# Figure 12. Capacitance variations %OSS * #ISS )$! Figure 13. Output capacitance stored energy !-V # P& !-V #OSS #RSS 6$36 Doc ID15685 Rev 3 6$36 7/19 Electrical characteristics STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Figure 14. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM Figure 15. Normalized on-resistance vs temperature Figure 16. Source-drain diode forward characteristics 4* # Figure 17. Normalized BVDSS vs temperature !-V 63$ 6 4* # !-V 2$3ON NORM 4* # !-V "6$33 NORM 4* # 4* # )3$! Figure 18. Maximum avalanche energy vs starting Tj !-V %!3 M* )$! 6$$6 8/19 4* # Doc ID15685 Rev 3 4* # STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID15685 Rev 3 10% AM01473v1 9/19 Package mechanical data 4 STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/19 Doc ID15685 Rev 3 STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID15685 Rev 3 11/19 Package mechanical data STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Figure 25. TO-220FP drawing 7012510_Rev_K_B 12/19 Doc ID15685 Rev 3 STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Table 10. Package mechanical data I2PAKFP mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - 5.20 Figure 26. I2PAKFP drawing REV! Doc ID15685 Rev 3 13/19 Package mechanical data Table 11. STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/19 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID15685 Rev 3 STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID15685 Rev 3 15/19 Package mechanical data Table 12. STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 16/19 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 Doc ID15685 Rev 3 5.70 STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Package mechanical data Figure 28. TO-247 drawing 0075325_G Doc ID15685 Rev 3 17/19 Revision history 5 STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Revision history Table 13. Document revision history Date Revision 15-May-2009 1 First release. 02-Sep-2010 2 Document status promoted from preliminary data to datasheet. 3 Added new device in I²PAKFP. Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal data, Figure 2: Safe operating area for TO220FP and I2PAKFP, Figure 3: Thermal impedance for TO220FP and I2PAKFP have been modified accordingly. Table 10: I2PAKFP mechanical data and Figure 26: I2PAKFP drawing have been added. 21-Jun-2012 18/19 Changes Doc ID15685 Rev 3 STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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