STMICROELECTRONICS T3050H-6I

T3035H, T3050H
Snubberless™ high temperature 30 A Triacs
Features
A2
■
High current Triac
■
High immunity level
■
Low thermal resistance with clip bounding
■
RoHS (2002/95/EC) compliant package
■
Very high commutation (3Q) at 150 °C
capability
■
UL certified (ref. file E81734)
G
A1
A2
A1
A2
G
A1
A2
G
Applications
Thanks to its high electrical noise immunity level
and its strong current robustness, the T30xxH
series is designed for the control of AC actuators
in appliances and industrial systems.
TO-220AB
(T30xxH-6T)
Table 1.
Description
Specifically designed to operate at 150 °C, the
new 30 A T30xxH Triacs provide very high
dynamic performance and enhanced
performance in terms of power loss and thermal
dissipation. This allows optimizing the heatsink
size, leading to space and cost effectiveness
when compared to electro-mechanical solutions.
TO-220AB insulated
(T30xxH-6l)
Device summary
Symbol
Value
IT(rms)
30 A
VDRM/VRRM
600 V
IGT
35 or 50 mA
Based on ST Snubberless™ technology, they
offer a specified minimal commutation and high
noise immunity levels valid up to the Tj max.
The T30xxH series optimize safely the control of
universal motors and of inductive loads found in
power tools and major appliances.
By using an internal ceramic pad, the T30xxH-6I
provides voltage insulation (rated at 2500 V rms).
TM: Snubberless is a trademark of STMicroelectronics
September 2011
Doc ID 17029 Rev 4
1/9
www.st.com
9
Characteristics
1
T3035H T3050H
Characteristics
Table 2.
Absolute maximum rating
Symbol
Parameter
IGM
PG(AV)
Tstg
Tj
Table 3.
A
TO-220AB
insul.
Tc = 92 °C
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
F = 50 Hz
t = 20 ms
270
F = 60 Hz
t = 16.7 ms
284
I²t Value for fusing
tp = 10 ms
ITSM
VDSM/
VRSM
30
Tc = 121 °C
On-state rms current (full sine wave)
dI/dt
Unit
TO-220AB
IT(RMS)
I ²t
Value
A
487
A²s
Critical rate of rise of on-state current
F = 120 Hz
IG = 2 x IGT , tr ≤ 100 ns
Tj = 150 °C
50
A/µs
Non repetitive surge peak
off-state volt-age
tp = 10 µs
Tj = 25 °C
VDSM/VRSM
+100
V
Peak gate current
tp = 20 µs
Tj = 150 °C
4
A
Tj = 150 °C
1
W
-40 to +150
-40 to +150
°C
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Value
Symbol
Test conditions
Quadrant
Unit
T3035H T3050H
IGT (1)
VGT
VGD
IH
(2)
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
I - II - III
MAX.
I - II - III
MAX.
1.0
V
I - II - III
MIN.
0.15
V
IT = 500 mA
MAX.
I - III
IL
IG = 1.2 IGT
(2)
II
60
75
75
90
90
110
Without snubber
mA
mA
mA
Tj = 150 °C
MIN.
1000
1500
V/µs
Tj = 150 °C
MIN.
33
44
A/ms
1. Minimum IGT is guaranted at 20 % of IGT max.
2. For both polarities of A2 referenced to A1.
2/9
50
MAX.
dV/dt (2) VD = 67 %VDRM gate open
(dI/dt)c
35
Doc ID 17029 Rev 4
T3035H T3050H
Table 4.
Characteristics
Static characteristics
Symbol
VTM (1)
Vto
(1)
Rd
(1)
Test conditions
ITM = 42 A
tp = 380 µs
Unit
Tj = 25 °C
MAX.
1.55
V
Threshold voltage
Tj = 150 °C
MAX.
0.85
V
Dynamic resistance
Tj = 150 °C
MAX.
15
mΩ
10
µA
Tj = 25 °C
VDRM = VRRM
IDRM
IRRM
Value
MAX.
Tj = 150 °C
VD/VR = 400V (at peak mains voltage)
Tj = 150 °C
VD/VR = 200V (at peak mains voltage)
Tj = 150 °C
8.5
7
mA
MAX.
5.5
1. for both polarities of A2 referenced to A1.
Table 5.
Thermal resistance
Symbol
Parameter
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
Figure 1.
Value
TO-220AB
0.8
TO-220AB Insul
1.6
TO-220AB / TO-220AB Insul
60
Unit
°C/W
Maximum power dissipation versus Figure 2.
rms on-state current
(full cycle 180°)
P(W)
°C/W
On-state rms current vs case
temperature
IT(RMS)(A)
40
35
TO-220AB
35
30
30
25
TO-220AB- ins
25
20
20
15
15
10
10
5
5
IT(RMS)(A)
0
0
5
10
15
20
25
30
TC(°C)
0
0
Doc ID 17029 Rev 4
25
50
75
100
125
150
3/9
Characteristics
Figure 3.
T3035H T3050H
On-state rms current versus
ambient temperature
(free air convection)
Figure 4.
IT(RMS)(A)
3.5
1.0E+00
Relative variation of thermal
impedance versus pulse duration
K = [Zth / Rth]
Zth(j-c)
Zth(j-a)
3.0
2.5
2.0
1.0E-01
1.5
1.0
0.5
0.0
Ta(°C)
0
25
Figure 5.
2.5
50
75
100
125
150
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C]
Figure 6.
2.0
tp(s)
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Relative variation of holding
current and latching current vs
junction temperature (typical value)
IH, IL [Tj] / IH, IL [Tj = 25 °C]
typical value
IGT Q3
2.0
1.0E-02
1.0E-03
IGT Q1-Q2
1.5
1.5
1.0
1.0
IL
VGT Q1-Q2-Q3
IH
0.5
0.5
0.0
-50
Tj(°C)
-25
Figure 7.
0
25
50
75
100
125
150
Surge peak on-state current vs
number of cycles
Tj(°C)
0.0
-50
-25
Figure 8.
ITMS(A)
10000
0
25
50
75
100
125
150
Non repetitive surge peak on-state
current for a sinusoidal pulse
ITSM (A), I²t (A²s)
250
dl/dt limitation: 50 A/µs
Tj initial = 25 °C
t = 20 ms
200
One cycle
Non Repetitive
Tj initial = 25 °C
1000
150
I²t
100
100
Repetitive
TC = 121 °C
50
Number of cycles
0
1
4/9
ITSM
10
100
1000
width tp < 10 ms, and corresponding value of I²t
10
0.01
0.10
1.00
Doc ID 17029 Rev 4
t (ms)
10.00
T3035H T3050H
Figure 9.
1000
Characteristics
On state characteristics
(maximum values)
Figure 10. Relative variation of critical rate of
decrease of main current vs
junction temeprature
ITM(A)
11
(dI/dt)C[Tj]/(dI/dt)C[Tj = 150 °C]
10
9
8
100
7
TJ max:
Vto = 0.85 V
Rd = 15 mΩ
6
5
4
10
3
2
Tj = 150 °C
Tj = 25 °C
1
0
1
1
VTM(V)
2
3
4
Figure 11. Relative variation of static dV/dt
immunity vs junction temperature
11
Tj(°C)
0
25
5
50
100
125
150
Figure 12. Relative variation of leakage
current vs junction temperature for
different values of blocking voltage
dV/dt[Tj]/dV/dt[Tj = 150 °C]
1.0E+00
VD = VR = 400 V
10
75
IDRM/IRRM[Tj;VDRM/VRRM]/IDRM/IRRM
[Tj = 150 °C; 600 V]
9
VDRM = VRRM = 600 V
1.0E-01
8
7
VDRM = VRRM = 400 V
6
1.0E-02
5
VDRM = VRRM = 200 V
4
3
1.0E-03
2
1
Tj(°C)
0
Tj(°C)
1.0E-04
25
50
75
100
125
150
25
50
75
100
125
150
Figure 13. Acceptable junction to ambient thermal resistance vs repetitive peak off-state voltage
and ambient temperature
65
60
55
50
45
40
35
30
25
20
15
10
5
0
Rth(j-a)(°C/W)
VDRM = VRRM = 200 V
VDRM = VRRM = 400 V
V DRM = V RRM = 600 V
voltage and ambient temperature
Ta(°C)
20
30
40
50
60
70
80
90
100
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110
120
130
140
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Package information
2
T3035H T3050H
Package information
●
Epoxy meets UL94, V0
●
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
TO-220AB (NIns. and Ins. 20-up) dimensions
Dimensions
Ref.
Millimeters
Min.
A
15.20
a1
C
B
ØI
Typ.
Max.
Inches
Min.
Typ.
15.90 0.598
3.75
Max.
0.625
0.147
a2
13.00
14.00 0.511
0.551
B
10.00
10.40 0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
2.40
2.70
0.094
0.106
F
6.20
6.60
0.244
0.259
ØI
3.75
3.85
0.147
0.151
I4
15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
b2
L
F
A
I4
l3
c2
a1
l2
a2
M
b1
c1
e
M
6/9
Doc ID 17029 Rev 4
2.60
0.102
T3035H T3050H
3
Ordering information scheme
Ordering information scheme
Figure 14. Ordering information scheme
T 30 35
H - 6
T
Triac series
Current
in Arms
Sensitivity
35 : 35 mA
50 : 50 mA
High Temperature
Voltage
6 : 600 V
Package
T = TO-220AB
I = TO-220AB ins
Doc ID 17029 Rev 4
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Ordering information
4
T3035H T3050H
Ordering information
Table 7.
Ordering information
Order code
Marking
T3035H-6T
T3035H 6T
T3050H-6T
T3050H 6T
T3035H-6I
T3035H 6I
T3050H-6I
T3050H 6I
Package
Weight
Base qty
Delivery mode
2.3 g
50
Tube
TO-220AB
5
Revision history
Table 8.
8/9
TO-220AB
Insulated
Document revision history
Date
Revision
Changes
28-Jan-2010
1
Initial release.
17-May-2010
2
Updated maximum Tj in Table 2.
14-Dec-2010
3
Updated IGT in Table 1.
20-Sep-2011
4
Updated: Features.
Doc ID 17029 Rev 4
T3035H T3050H
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