VN770K ® QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS TYPE VN770K RDS(on) 220mΩ (*) IOUT 9A (**) VCC 36V (*) Total resistance of one side in bridge configuration (**) Typical current limitation value SUITED AS LOW VOLTAGE BRIDGE LINEAR CURRENT LIMITATION ■ VERY LOW STAND-BY POWER DISSIPATION ■ SHORT CIRCUIT PROTECTED ■ STATUS FLAG DIAGNOSTIC (OPEN DRAIN) ■ INTEGRATED CLAMPING CIRCUITS ■ UNDERVOLTAGE PROTECTION ■ ■ ■ SO-28 ESD PROTECTION DESCRIPTION The VN770K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using |STMicroelectronics VIPower™ M0-3 Technology. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. The dual high side switches have built-in thermal shutdown to protect the chips from overtemperature and current limiter blocks to protect the device from short circuit. Status output is provided to indicate open load in off and on state and overtemperature. The low side switches are two OMNIFET II types (fully autoprotected Power MOSFET in VIPower™ technology). They have built-in thermal shutdown, linear current limitation and overvoltage clamping. Fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin. PIN FUNCTION No 1, 3, 25, 28 2 4, 11 5, 10, 19, 24 6 7 8 9 12, 14, 15, 18 13 16, 17 20, 21 22, 23 26, 27 December 2002 NAME DRAIN 3 INPUT 3 N.C. VCC GND INPUT 1 DIAGNOSTIC INPUT 2 DRAIN 4 INPUT 4 SOURCE 4 SOURCE 2 SOURCE 1 SOURCE 3 FUNCTION Drain of Switch 3 (low-side switch) Input of Switch 3 (low-side switch) Not Connected Drain of Switches 1 and 2 (high-side switches) and Power Supply Voltage Ground of Switches 1 and 2 (high-side switches) Input of Switch 1 (high-side switches) Diagnostic of Switches 1 and 2 (high-side switches) Input of Switch 2 (high-side switch) Drain of switch 4 (low-side switch) Input of Switch 4 (low-side switch) Source of Switch 4 (low-side switch) Source of Switch 2 (high-side switch) Source of Switch 1 (high-side switch) Source of Switch 3 (low-side switch) 1/20 VN770K BLOCK DIAGRAM Vcc Vcc CLAMP OVERVOLTAGE UNDERVOLTAGE GND CLAMP 1 SOURCE1 INPUT1 DRIVER 1 CLAMP 2 DIAG CURRENT LIMITER 1 OVERTEMP. 1 LOGIC DRIVER 2 SOURCE2 OPENLOAD ON 1 CURRENT LIMITER 2 INPUT2 OPENLOAD OFF 1 OPENLOAD ON 2 OPENLOAD OFF 2 OVERTEMP. 2 Overvoltage Clamp INPUT3 DRAIN3 Gate Control SOURCE3 Over Temperature Linear Current Limiter Overvoltage Clamp INPUT4 DRAIN4 Gate Control SOURCE4 Over Temperature 2/20 Linear Current Limiter VN770K CONNECTION DIAGRAM THERMAL DATA Symbol Rthj-case Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case (High-side switch) Thermal Resistance Junction-case (Low-side switch) Thermal Resistance Junction-ambient MAX MAX MAX Value 20 20 60 Unit °C/W °C/W °C/W ABSOLUTE MAXIMUM RATING DUAL HIGH SIDE SWITCH Symbol VCC - VCC - IGND IOUT - IOUT IIN Istat VESD Parameter DC Supply Voltage Reverse DC Supply Voltage DC Reverse Ground Pin Current DC Output Current Reverse DC Output Current DC Input Current DC Status Current Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF) - INPUT - STATUS - OUTPUT Ptot Tj Tc Tstg - VCC Power Dissipation (TC=25°C) Junction Operating Temperature Case Operating Temperature Storage Temperature Value 41 - 0.3 - 200 Internally Limited -6 +/- 10 +/- 10 Unit V V mA A A mA mA 4000 V 4000 V 5000 V 5000 V 6 Internally Limited - 40 to 150 - 55 to 150 W °C °C °C 3/20 VN770K ABSOLUTE MAXIMUM RATING (continued) LOW SIDE SWITCH Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot Tj Tc Tstg Parameter Drain-source Voltage (VIN=0V) Input Voltage Input Current Minimum Input Series Impedance Drain Current Reverse DC Output Current Electrostatic Discharge (R=1.5KΩ, C=100pF) Electrostatic Discharge on output pin only Value Internally Clamped Internally Clamped +/-20 150 Internally Limited -10.5 4000 Unit V V mA Ω A A V 16500 V 6 Internally limited Internally limited -55 to 150 W °C °C °C (R=330Ω, C=150pF) Power Dissipation (TC=25°C) Operating Junction Temperature Case Operating Temperature Storage Temperature ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (8V < VCC < 36V; -40°C < Tj < 150°C, unless otherwise specified) POWER OUTPUTS (Per each channel) Symbol VCC (**) VUSD (**) VOV (**) RON IS (**) IL(off1) IL(off2) IL(off3) IL(off4) Parameter Operating Supply Voltage Undervoltage Shut-down Overvoltage Shut-down On State Resistance Supply Current Off State Off State Off State Off State Output Current Output Current Output Current Output Current Test Conditions Min 5.5 3 36 Typ 13 4 160 Unit V V V mΩ Off State; VCC=13V; VIN=VOUT=0V 12 320 40 mΩ µA Off State; VCC=13V; VIN=VOUT=0V; Tj=25°C 12 25 µA On State; VCC=13V; VIN=5V; IOUT=0A 5 7 50 0 5 3 mA µA µA µA µA Typ Max Unit IOUT=1A; Tj=25°C IOUT=1A; VCC>8V VIN=VOUT=0V VIN=0V; VOUT=3.5V VIN=VOUT=0V; Vcc=13V; Tj =125°C VIN=VOUT=0V; Vcc=13V; Tj =25°C 0 -75 Test Conditions RL=13Ω from VIN rising edge to VOUT=1.3V RL=13Ω from VIN falling edge to VOUT=11.7V Min Max 36 5.5 (**) Per device SWITCHING (VCC=13V) Symbol Parameter td(on) Turn-on Delay Time td(off) Turn-off Delay Time dVOUT/ dt(on) Turn-on Voltage Slope RL=13Ω from VOUT=1.3V to VOUT=10.4V dVOUT/ dt(off) Turn-off Voltage Slope RL=13Ω from VOUT=11.7V to VOUT=1.3V 4/20 30 µs 30 µs See relative diagram See relative diagram V/µs V/µs VN770K ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) LOGIC INPUT Symbol VIL IIL VIH IIH Vhyst VICL Parameter Input Low Level Low Level Input Current Input High Level High Level Input Current Input Hysteresis Voltage Input Clamp Voltage Test Conditions VIN = 1.25V Min Typ 1 3.25 VIN = 3.25V 10 0.5 6 IIN = 1mA Max 1.25 IIN = -1mA 6.8 8 -0.7 Unit V µA V µA V V V STATUS PIN Symbol VSTAT ILSTAT CSTAT VSCL Parameter Test Conditions Status Low Output Voltage ISTAT= 1.6 mA Status Leakage Current Normal Operation; VSTAT= 5V Status Pin Input Normal Operation; VSTAT= 5V Capacitance ISTAT= 1mA Status Clamp Voltage ISTAT= - 1mA Min 6 Typ 6.8 Max 0.5 10 Unit V µA 100 pF 8 V -0.7 V PROTECTIONS Symbol TTSD TR Thyst tsdl Parameter Shut-down Temperature Reset Temperature Thermal Hysteresis Status Delay in Overload Conditions Ilim Current limitation Test Conditions Min 150 135 7 Typ 175 7 8 10 5.5V<VCC<36V Vdemag Turn-off Output Clamp Voltage IOUT=1A; L=6mH Unit °C °C °C 20 µs 13 A 13 A 13 A 15 Tj>TTSD Tj=125° C Max 200 VCC-41 VCC-48 VCC-55 V OPENLOAD DETECTION Symbol IOL tDOL(on) VOL tDOL(off) Parameter Openload ON State Detection Threshold Openload ON State Detection Delay Openload OFF State Voltage Detection Threshold Openload Detection Delay at Turn Off Test Conditions VIN=5V Min Typ Max Unit 20 40 80 mA 200 µs 3.5 V 1000 µs IOUT=0A VIN=0V 1.5 2.5 5/20 1 VN770K ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (-40°C < Tj < 150°C, unless otherwise specified) OFF Symbol VCLAMP VCLTH VINTH IISS Parameter Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input Threshold Voltage Supply Current from Input Pin VINCL Input-Source Clamp Voltage IDSS Zero Input Voltage Drain Current (VIN=0V) Test Conditions Min Typ Max Unit VIN=0V; ID=3.5A 40 45 55 V VIN=0V; ID=2mA 36 VDS=VIN; ID=1mA 0.5 VDS=0V; VIN=5V IIN=1mA 6 IIN=-1mA VDS=13V; VIN=0V; Tj=25°C V 2.5 V 100 150 µA 6.8 8 -1.0 -0.3 30 VDS=25V; VIN=0V 75 V µA ON Symbol RDS(on) Parameter Static Drain-source On Resistance Test Conditions VIN=5V; ID=3.5A; Tj=25°C Min Typ VIN=5V; ID=3.5A Max 60 120 Unit mΩ (Tj=25°C, unless otherwise specified) DYNAMIC Symbol gfs (*) COSS Parameter Forward Transconductance Output Capacitance Test Conditions Min VDD=13V; ID=3.5A VDS=13V; f=1MHz; VIN=0V Typ Max Unit 9 S 220 pF SWITCHING Symbol td(on) tr td(off) tf td(on) tr td(off) tf Parameter Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time (dI/dt)on Turn-on Current Slope Qi Total Input Charge Test Conditions Min VDD=15V; ID=3.5A Vgen=5V; Rgen=RIN MIN=150Ω VDD=15V; ID=3.5A Vgen=5V; Rgen=2.2KΩ VDD=15V; ID=3.5A Vgen=5V; Rgen=RIN MIN=150Ω VDD=12V; ID=3.5A; VIN=5V Igen=2.13mA Typ 100 470 500 350 0.75 4.6 5.4 3.6 Max 300 1500 1500 1000 2.3 14.0 16.0 11.0 Unit ns ns ns ns µs µs µs µs 6.5 A/µs 18 nC SOURCE DRAIN DIODE Symbol VSD (*) trr Qrr IRRM 6/20 Parameter Test Conditions Forward On Voltage ISD=3.5A; VIN=0V Reverse Recovery Time ISD=3.5A; dI/dt=20A/µs Reverse Recovery Charge VDD=30V; L=200µH Reverse Recovery Current Min Typ 0.8 220 0.28 2.5 Max Unit V ns µC A VN770K ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued) PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified) Symbol Parameter Ilim Drain Current Limit tdlim Step Response Current Limit Tjsh Tjrs Igf Eas Test Conditions VIN=5V; VDS=13V Min 6 VIN=5V; VDS=13V; Tj=125°C VIN=5V; VDS=13V 6.5 Overtemperature 150 Shutdown Overtemperature Reset Fault Sink Current Single Pulse VIN= 5V; VDS=13V; Tj=Tjsh starting Tj=25°C; VDD=24V Avalanche Energy VIN=5V; Rgen=RIN MIN=150Ω; L=24mH Typ 9 Unit A 12 A 4.0 µs 175 °C 15 °C mA 135 200 Max 12 mJ (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5% 7/20 VN770K DUAL HIGH-SIDE SWITCH SWITCHING TIME WAVEFORMS VOUTn 90% 80% dVOUT/dt(off) dVOUT/dt(on) 10% t VINn td(on) td(off) t TRUTH TABLE CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > VOL Output Current < IOL INPUT L H L H H L H L H L H L H L H OUTPUT L H L X X L L L L L L H H L H OPEN LOAD STATUS TIMING (with external pull-up) IOUT < IOL VOUT> VOL VINn STATUS H H H (Tj < TTSD) H (Tj > TTSD) L H L X X H H L H H L OVER TEMP STATUS TIMING Tj > TTSD VINn VSTAT n VSTAT n tSDL tDOL(off) tSDL tDOL(on) 8/20 1 VN770K TYPICAL APPLICATION DIAGRAM 9/20 VN770K Figure 1: Waveforms NORMAL OPERATION INPUTn OUTPUT VOLTAGEn STATUSn UNDERVOLTAGE VCC VUSDhyst VUSD INPUTn OUTPUT VOLTAGEn STATUSn undefined OVERVOLTAGE VCC<VOV VCC>V OV VCC INPUTn OUTPUT VOLTAGEn STATUSn OPEN LOAD with external pull-up INPUTn VOUT>VOL OUTPUT VOLTAGEn VOL STATUSn OPEN LOAD without external pull-up INPUTn OUTPUT VOLTAGEn STATUSn OVERTEMPERATURE Tj TTSD TR INPUTn OUTPUT CURRENTn STATUSn 10/20 1 VN770K ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH High Level Input Current Off State Output Current IL(off1) (µA) Iih (µA) 1.6 5 1.44 4.5 Off state Vcc=36V Vin=Vout=0V 1.28 1.12 Vin=3.25V 4 3.5 0.96 3 0.8 2.5 0.64 2 0.48 1.5 0.32 1 0.16 0.5 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (ºC) 50 75 100 125 100 125 100 125 150 175 Tc (ºC) Input Clamp Voltage Status Leakage Current Vicl (V) Ilstat (µA) 8 0.03 0.0275 7.75 Vstat=5V 0.025 Iin=1mA 7.5 0.0225 0.02 7.25 0.0175 7 0.015 0.0125 6.75 0.01 6.5 0.0075 0.005 6.25 0.0025 6 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (ºC) 50 75 150 175 Tc (ºC) Status Low Output Voltage Status Clamp Voltage Vstat (V) Vscl (V) 8 1 0.9 7.75 Istat=1.6mA Istat=1mA 0.8 7.5 0.7 7.25 0.6 0.5 7 0.4 6.75 0.3 6.5 0.2 6.25 0.1 0 6 -50 -25 0 25 50 75 Tc (ºC) 100 125 150 175 -50 -25 0 25 50 75 150 175 Tc (ºC) 11/20 VN770K ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH (continued) On State Resistance Vs Tcase On State Resistance Vs VCC Ron (mOhm) Ron (mOhm) 400 400 350 350 Iout=1A Vcc=8V; 13V & 36V 300 Iout=1A 300 250 250 200 200 150 150 100 100 50 50 0 Tc=150ºC Tc=25ºC Tc= - 40ºC 0 -50 -25 0 25 50 75 100 125 150 175 5 10 15 20 Tc (ºC) 25 30 35 40 Vcc(V) Openload On State Detection Threshold Input High Level Vih (V) Iol (mA) 60 3.5 55 3.375 3.25 Vcc=13V Vin=5V 50 3.125 45 3 40 2.875 35 2.75 30 2.625 2.5 25 2.375 20 2.25 15 2.125 2 10 -50 -25 0 25 50 75 100 125 150 -50 175 -25 0 25 50 75 100 125 150 175 150 175 Tc (ºC) Tc (ºC) Input Low Level Input Hysteresis Voltage Vil (V) Vhyst (V) 2.6 1.5 1.4 2.4 1.3 2.2 1.2 2 1.1 1.8 1 0.9 1.6 0.8 1.4 0.7 1.2 0.6 0.5 1 -50 -25 0 25 50 75 Tc (ºC) 12/20 100 125 150 175 -50 -25 0 25 50 75 Tc (°C) 100 125 VN770K ELECTRICAL CHARACTERIZATION FOR DUAL HIGH SIDE SWITCH (continued) Overvoltage Shutdown Openload Off State Voltage Detection Threshold Vov (V) Vol (V) 50 5 4.5 47.5 Vin=0V 4 45 3.5 42.5 3 40 2.5 2 37.5 1.5 35 1 32.5 0.5 30 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 Tc (ºC) 50 75 100 125 150 175 100 125 150 175 Tc (ºC) Turn-on Voltage Slope Turn-off Voltage Slope dVout/dt(on) (V/ms) dVout/dt(off) (V/ms) 1000 500 900 450 Vcc=13V Rl=13Ohm 800 Vcc=13V Rl=13Ohm 400 700 350 600 300 500 250 400 200 300 150 200 100 100 50 0 -50 -25 0 25 50 75 100 125 150 175 0 -50 Tc (ºC) -25 0 25 50 75 ILIM Vs Tcase Ilim (A) 20 18 Vcc=13V 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 175 Tc (ºC) 13/20 VN770K ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES Static Drain Source On Resistance Source-Drain Diode Forward Characteristics Vsd (mV) Rds(on) (mOhm) 1000 500 Tj= - 40ºC 950 450 Vin=0V Vin=2.5V 900 400 850 350 800 300 750 250 700 200 650 150 600 100 550 50 500 Tj=25ºC Tj=150ºC 0 0 2 4 6 8 10 12 14 0 0.25 0.5 Id(A) 0.75 1 1.25 Id(A) Static Drain-Source On resistance Vs. Input Voltage Derating Curve Rds(on) (mOhm) 120 110 Id=3.5A 100 90 Tj=150ºC 80 70 60 50 Tj=25ºC 40 30 Tj= - 40ºC 20 10 0 3 3.5 4 4.5 5 5.5 6 6.5 7 Vin(V) Static Drain-Source On resistance Vs. Input Voltage Transconductance Rds(on) (mOhm) Gfs (S) 140 20 18 120 Vds=13V Tj=150ºC 16 100 Tj=-40ºC Tj=25ºC 14 Id=6A Id=1A 80 Tj=150ºC 12 10 60 40 Tj=25ºC 8 Tj=-40ºC 20 Id=6A Id=1A 6 Id=6A Id=1A 4 2 0 0 3 3.5 4 4.5 Vin(V) 14/20 5 5.5 6 6.5 0 1 2 3 4 Id(A) 5 6 7 8 VN770K ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES (continued) Static Drain-Source On Resistance Vs. Id Transfer Characteristics Rds(on) (mOhm) Idon(A) 140 10 Tj=25ºC 9 120 Tj=-40ºC Tj=150ºC Vds=13.5V 8 Vin=3.5V 100 7 Tj=150ºC Vin=5V 6 80 5 60 Vin=3.5V 4 Tj=25ºC Vin=5V Vin=3.5V 40 3 Tj=-40ºC 2 Vin=5V 20 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 1 1.5 2 2.5 3 Id(A) 3.5 4 4.5 5 5.5 Vin(V) Turn On Current Slope Turn On Current Slope di/dt(A/us) di/dt(A/us) 8 2.25 2 7 Vin=5V Vdd=15V Id=3.5A 6 Vin=3.5V Vdd=15V Id=3.5A 1.75 5 1.5 4 1.25 3 1 2 0.75 1 0.5 0.25 0 100 200 300 400 500 600 700 800 900 1000 1100 100 200 300 400 500 600 700 800 900 1000 1100 Rg(ohm) Rg(ohm) Turn off drain source voltage slope Input Voltage Vs. Input Charge dv/dt(V/us) Vin(V) 300 8 250 7 Vds=12V Id=3.5A 6 Vin=5V Vdd=15V Id=3.5A 200 5 150 4 100 3 2 50 1 0 100 0 0 5 10 15 Qg(nC) 20 25 200 300 400 500 600 700 800 900 1000 1100 Rg(ohm) 15/20 VN770K ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES (continued) Turn Off Drain-Source Voltage Slope Capacitance Variations C(pF) dv/dt(v/us) 600 300 250 500 f=1MHz Vin=0V Vin=3.5V Vdd=15V Id=3.5A 200 400 150 300 100 200 50 0 200 100 400 300 500 600 700 800 900 1000 1100 100 0 5 10 15 20 25 30 35 Vds(V) Rg(ohm) Switching Time Resistive Load Switching Time Resistive Load t(us) t(ns) 5.5 1600 tr 5 Vdd=15V Id=3.5A Vin=5V 4.5 4 1400 tr Vdd=15V Id=3.5A Rg=150ohm td(off) 1200 tf 3.5 1000 3 800 2.5 2 600 1.5 td(off) 400 1 tf td(on) 0.5 200 0 td(on) 250 0 500 750 1000 1250 1500 1750 2000 2250 2500 0 3.25 3.5 3.75 4 Rg(ohm) 4.25 4.5 4.75 5 5.25 Vin(V) Normalized On Resistance Vs. Temperature Output Characteristics ID(A) Rds(on) 12 2.25 11 2 10 9 Vin=5V Vin=4.5V 8 Vin=4V Vin=5V Id=3.5A 1.75 7 1.5 Vin=3V 6 1.25 5 4 1 3 Vin=2.5V 2 0.75 1 Vin=2V 0.5 0 0 1 2 3 4 5 6 7 VDS(V) 16/20 8 9 10 11 12 13 -50 -25 0 25 50 75 T(ºC) 100 125 150 175 VN770K ELECTRICAL CHARACTERIZATION FOR LOW SIDE SWITCHES (continued) Normalized Input Threshold Voltage Vs. Current Limit Vs. Junction Temperature Temperature Vin(th) Ilim (A) 1.15 15 1.1 14 Vds=Vin Id=1mA 1.05 Vds=13V Vin=5V 13 12 1 11 0.95 10 0.9 9 0.85 8 0.8 7 0.75 6 5 0.7 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 Tj (ºC) T(ºC) Step Response Current Limit Tdlim(us) 7 6.5 Vin=5V Rg=150ohm 6 5.5 5 4.5 4 3.5 5 10 15 20 25 30 35 Vdd(V) 17/20 VN770K SO-28 MECHANICAL DATA DIM. mm. MIN. TYP A inch MAX. TYP. MAX. 0.104 a1 0.10 0.30 0.004 0.012 b 0.35 0.49 0.013 0.019 b1 0.23 0.32 0.009 0.012 C 0.50 0.020 c1 45 (typ.) D 17.7 E 10.00 e 18.1 0.697 10.65 0.393 1.27 e3 0.713 0.419 0.050 16.51 0.650 F 7.40 7.60 0.291 0.299 L 0.40 1.27 0.016 0.050 S 18/20 MIN. 2.65 8 (max.) VN770K SO-28 TUBE SHIPMENT (no suffix) Base Q.ty Bulk Q.ty Tube length (± 0.5) A B C (± 0.1) C B 28 700 532 3.5 13.8 0.6 All dimensions are in mm. A TAPE AND REEL SHIPMENT (suffix “13TR”) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) B (min) C (± 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 16.4 60 22.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 (± 0.1) P D (± 0.1/-0) D1 (min) F (± 0.05) K (max) P1 (± 0.1) All dimensions are in mm. 16 4 12 1.5 1.5 7.5 6.5 2 End Start Top No components Components No components cover tape 500mm min Empty components pockets saled with cover tape. 500mm min User direction of feed 19/20 VN770K Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 20/20