TSC10 Preliminary High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 500V BVCBO 980V IC 1.5A VCE(SAT) Features 0.5V @ IC / IB = 0.5A / 0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TSC10CT B0 TO-92 1Kpcs / Bulk TSC10CT B0G TO-92 1Kpcs / Bulk TSC10CT A3 TO-92 2Kpcs / Ammo TSC10CT A3G TO-92 2Kpcs / Ammo Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 980 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 10 V Collector Current DC IC Pulse Total Power Dissipation @ TC=25ºC PDTOT Operating Junction Temperature A 3 1.96 W +150 o C TSTG - 55 to +150 o C Symbol Limit TJ Operating Junction and Storage Temperature Range 1.5 Thermal Performance Parameter Thermal Resistance Junction to Ambient RӨJA Thermal Resistance Junction to Case RӨJC 1/4 Unit 215 o C/W 65 o C/W Version: Preliminary TSC10 Preliminary High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =1mA, IB =0 BVCBO 980 -- -- V Collector-Emitter Breakdown Voltage IC =10mA, IE =0 BVCEO 500 -- -- V Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO 9 -- -- V Collector Cutoff Current VCES =980V, IE =0 ICES -- -- 10 uA Emitter Cutoff Current VEB 9V, IC =0 IEBO -- -- 0.5 uA IC / IB = 0.5A / 0.1A VCE(SAT)1 -- 0.3 0.5 IC / IB = 1.0A / 0.25A VCE(SAT)2 -- 0.5 1 IC / IB = 1.5A / 0.5A VCE(SAT)3 -- 0.9 2 IC / IB = 0.5A / 0.1A VBE(SAT)1 -- -- 1 IC / IB = 1.0A / 0.25A VBE(SAT)2 -- -- 1.2 15 -- 40 20 -- 40 6 -- 40 fT 4 -- -- MHz Cob -- 21 -- pF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE = 10V, IC = 10mA DC Current Gain VCE = 10V, IC = 400mA hFE VCE = 10V, IC = 1A V V Dynamic Characteristics Frequency VCE = 10V, IC = 0.1A Output Capacitance VCB = 10V, f = 0.1MHz Resistive Load Switching Time (Ratings) Delay Time VCC = 125V, IC = 1A, td -- 0.05 0.2 uS Rise Time IB1 = IB2 = 0.2A, tr -- 1.1 -- uS Storage Time tp = 25uS tSTG -- 2 4 uS Fall Time Duty Cycle ≤1% tf -- 0.4 0.7 uS Note: pulse test: pulse width ≤300uS, duty cycle ≤ 2% 2/4 Version: Preliminary TSC10 Preliminary High Voltage NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 3/4 Version: Preliminary Preliminary TSC10 High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: Preliminary